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List of works by Sven Rogge

+Level Spectrum Of Single Gated As Donors

A Probabilistic Finite State Logic Machine Realized Experimentally on a Single Dopant Atom

scientific article published on 17 February 2017

A low temperature surface preparation method for STM nano-lithography on Si(100)

scientific article published in June 2010

A novel Kondo effect in single atom transistors

article

A planar Al-Si Schottky barrier metal–oxide–semiconductor field effect transistor operated at cryogenic temperatures

article

A silicon single-electron pump with tunable electrostatic confinement

scientific article published in June 2014

A surface code quantum computer in silicon

scientific article published on 30 October 2015

Ambipolar Cu- and Fe-phthalocyanine single-crystal field-effect transistors

article

An Accurate Single-Electron Pump Based on a Highly Tunable Silicon Quantum Dot

scientific article published on 19 May 2014

Anomalous behavior of ε(ω) in glasses at low temperature due to bias application

scientific article published in April 1996

Anomalous dielectric properties of amorphous solids at low temperatures

scientific article published in April 1996

Balanced ternary addition using a gated silicon nanowire

article

Charge Dynamics and Spin Blockade in a Hybrid Double Quantum Dot in Silicon

Charge pumping through a single donor atom

article by G C Tettamanzi et al published 17 June 2014 in New Journal of Physics

Charge pumping through isolated dopant atoms

Charge-Insensitive Single-Atom Spin-Orbit Qubit in Silicon.

scientific article published on 14 June 2016

Coherent frequency up-conversion of microwaves to the optical telecommunications band in an Er:YSO crystal

scholarly article by Xavier Fernandez-Gonzalvo et al published 8 December 2015 in Physical Review A

Coherent transport through a double donor system in silicon

Compact Mach-Zehnder interferometer based on self-collimation of light in a silicon photonic crystal

scientific article published in March 2010

Competing Periodicities in Fractionally Filled One-Dimensional Bands

scientific article published on 23 February 2006

Conductance distribution in nanometer-sized semiconductor devices due to dopant statistics

scientific article published on 30 January 2004

Contact and alignment marker technology for atomic scale device fabrication

Controlled Self-Organization of Atom Vacancies in Monatomic Gallium Layers

scientific article published on 14 September 2007

Correlation between Molecular Orbitals and Doping Dependence of the Electrical Conductivity in Electron-Doped Metal−Phthalocyanine Compounds

scientific article published on 01 September 2005

Density waves in atomic necklaces

Determination of the eigenstates and wavefunctions of a single gated As donor

Dielectric response of two level systems to strain fields at low temperatures

scientific article published in April 1996

Direct observation by resonant tunneling of theB+level in aδ-doped silicon barrier

scientific article published on 18 March 2004

Donor hyperfine Stark shift and the role of central-cell corrections in tight-binding theory.

scientific article published on 18 March 2015

Donor wave functions in Si gauged by STM images

scholarly article in Physical Review B, vol. 93 no. 4, January 2016

Drain current modulation in a nanoscale field-effect-transistor channel by single dopant implantation

article

Dynamics of a single-atom electron pump.

scientific article published on 15 March 2017

Effects of electrostatic confinement in a silicon single-electron pump

Electric field reduced charging energies and two-electron bound excited states of single donors in silicon

article

Electrical transport through ultrathin ordered K3C60 films on Si

Electrically Addressing a Molecule-Like Donor Pair in Silicon: An Atomic Scale Cyclable Full Adder Logic

scientific article published on 29 July 2010

Electron transport and tunnelling spectroscopy in alkali doped metal phthalocyanines

scientific article published in April 2004

Electronic Transport through Electron-Doped Metal Phthalocyanine Materials

article by M. F. Craciun et al published 3 February 2006 in Advanced Materials

Electronic states and valley-orbit coupling in linear and planar molecules formed by coupled P donors in silicon

scientific article published in May 2017

Engineered valley-orbit splittings in quantum-confined nanostructures in silicon

scholarly article in Physical Review B, vol. 83 no. 19, May 2011

Engineering long spin coherence times of spin-orbit qubits in silicon

scientific article published on 20 July 2020

Enhanced tunneling across nanometer-scale metal–semiconductor interfaces

article published in 2002

Entanglement control and magic angles for acceptor qubits in Si

Erratum: Lifetime-Enhanced Transport in Silicon due to Spin and Valley Blockade [Phys. Rev. Lett.107, 136602 (2011)]

scientific article published in Physical Review Letters

Evidence for the Importance of Interactions between Active Defects in Glasses

scientific article published on 22 April 1996

Evidence for the formation of a Mott state in potassium-intercalated pentacene

scholarly article in Physical Review B, vol. 79 no. 12, March 2009

Few electron limit of n-type metal oxide semiconductor single electron transistors

scientific article

Field-based scanning tunneling microscope manipulation of antimony dimers on Si(001)

scientific article published in 2001

Formation of Atom Wires on Vicinal Silicon

scientific article published on 17 September 2004

Ga-induced atom wire formation and passivation of stepped Si(112)

scientific article published on 29 September 2005

Gate-induced ionization of single dopant atoms

scientific article published on 14 November 2003

Gate-induced quantum-confinement transition of a single dopant atom in a silicon FinFET

scientific article published on 15 June 2008

Gate-inducedg-factor control and dimensional transition for donors in multivalley semiconductors

scholarly article in Physical Review B, vol. 80 no. 15, October 2009

Gigahertz Single-Electron Pumping Mediated by Parasitic States

scientific article published on 19 June 2018

Group-theoretical analysis of double acceptors in a magnetic field: Identification of theSi:B+ground state

scientific article published on 27 February 2004

He3 immersion cell for ultralow temperature study of amorphous solids

scientific article published in April 1997

Heterointerface effects on the charging energy of the shallowD−ground state in silicon: Role of dielectric mismatch

article by M. J. Calderón et al published 17 August 2010 in Physical Review B

High-Sensitivity Charge Detection with a Single-Lead Quantum Dot for Scalable Quantum Computation

scholarly article by M. G. House et al published 25 October 2016 in Physical Review Applied

Implementation of Multivariable Logic Functions in Parallel by Electrically Addressing a Molecule of Three Dopants in Silicon.

scientific article

Innovative characterization techniques for ultra-scaled FinFETs

Integrated logic circuits using single-atom transistors

scientific article

Interactions between active defects in glasses at low temperatures

scientific article published in June 1996

Interface Trap Density Metrology of State-of-the-Art Undoped Si n-FinFETs

scholarly article by Giuseppe C. Tettamanzi et al published April 2011 in IEEE Electron Device Letters

Interface trap density metrology from sub-threshold transport in highly scaled undoped Si n-FinFETs

scholarly article by Abhijeet Paul et al published 15 December 2011 in Journal of Applied Physics

Interface-induced heavy-hole/light-hole splitting of acceptors in silicon

Interplay between quantum confinement and dielectric mismatch for ultrashallow dopants

scholarly article in Physical Review B, vol. 87 no. 24, June 2013

Lifetime-enhanced transport in silicon due to spin and valley blockade.

scientific article published on 19 September 2011

Local Kondo temperatures in atomic chains

scholarly article in Physical Review B, vol. 91 no. 4, January 2015

Low Temperature ac Dielectric Response of Glasses to High dc Electric Fields

scientific article published on 11 July 1994

Low temperature time and electric field dependence of the dielectric constant in amorphous materials

scientific article published in February 1994

Magnetic flux tuning of Fano-Kondo interplay in a parallel double quantum dot system

scholarly article in Physical Review B, vol. 87 no. 23, June 2013

Magnetic-Field Probing of an SU(4) Kondo Resonance in a Single-Atom Transistor

scientific article published in Physical Review Letters

Mapping of single donors in nano-scale MOSFETs at low temperature

Mass Production of Silicon MOS-SETs: Can We Live with Nano-Devices’ Variability?

article

Modeling the pumping of electrons through a single dopant atom in a Si MOSFET

Multivalley envelope function equations and effective potentials for phosphorus impurity in silicon

scholarly article in Physical Review B, vol. 92 no. 19, November 2015

Non-local coupling of two donor-bound electrons

scientific article published on 15 March 2013

Nonequilibrium and hysteretic low temperature dielectric response to strain in glasses

scientific article published in March 1997

Nonlinear dielectric response of glasses at low temperature

scientific article published in May 1997

One-dimensional Sub-threshold Channels In Nanoscale Triple-gate Silicon Transistors

scientific article published in 2007

Optical addressing of an individual erbium ion in silicon

scientific article published in May 2013

Orbital Stark effect and quantum confinement transition of donors in silicon

scientific article published on 9 October 2009

Photo-ionisation spectra of single erbium centres by charge sensing with a nano transistor

scientific article published in December 2012

Photonic crystal Mach-Zehnder interferometer operating in the self-collimation mode of light

scientific article published on 11 February 2010

Potassium Phthalocyanine, KPc: One-Dimensional Molecular Stacks Bridged by K+Ions

scientific article published on 01 December 2006

Probing a single acceptor in a silicon nanotransistor

Probing the Quantum States of a Single Atom Transistor at Microwave Frequencies

scientific article published on 17 November 2016

Probing the spin states of a single acceptor atom.

scientific article published on 3 March 2014

Publisher’s Note: Engineered valley-orbit splittings in quantum-confined nanostructures in silicon [Phys. Rev. B83, 195323 (2011)]

scholarly article in Physical Review B, vol. 83 no. 23, June 2011

Quantum computing with acceptor spins in silicon.

scientific article published on 11 May 2016

Quantum computing: atomic clocks in the solid state

scientific article published in August 2013

Quantum simulation of the Hubbard model with dopant atoms in silicon

scientific article published on 20 April 2016

Querying a quasi-classical Oracle: One-bit function identification problem implemented in a single atom transistor

article

Radio frequency measurements of tunnel couplings and singlet-triplet spin states in Si:P quantum dots.

scientific article

Radio frequency reflectometry and charge sensing of a precision placed donor in silicon

scholarly article by Samuel Hile et al published 31 August 2015 in Applied Physics Letters

Radio-frequency dispersive detection of donor atoms in a field-effect transistor

article

Readout and control of the spin-orbit states of two coupled acceptor atoms in a silicon transistor

article

Reconfigurable Logic Devices on a Single Dopant Atom-Operation up to a Full Adder by Using Electrical Spectroscopy

scientific article published on 12 January 2009

Resonant tunneling spectroscopy of valley eigenstates on a donor-quantum dot coupled system

Sample variability and time stability in scaled silicon nanowires

article published in 2009

Scaling of micro-fabricated nanometer-sized Schottky diodes

scientific article published in October 2002

Scaling of nano-Schottky-diodes

scholarly article by G. D. J. Smit et al published 11 November 2002 in Applied Physics Letters

Selective Aluminum CVD on Si(100) From DMAH

scientific article published in January 1999

Silicon quantum electronics

scholarly article by Floris A. Zwanenburg et al published 10 July 2013 in Reviews of Modern Physics

Single Ion Implantation into Si-Based Devices

Single Rare-Earth Ions as Atomic-Scale Probes in Ultrascaled Transistors

scientific article published on 03 July 2019

Single domain transport measurements ofC60films

scientific article published on 30 January 2003

Single dopant impact on electrical characteristics of SOI NMOSFETs with effective length down to 10nm

Single dopants in semiconductors

scientific article published on 18 March 2015

Single dopants learn their place

scientific article published in February 2010

Single-Shot Single-Gate rf Spin Readout in Silicon

Single-dopant spectroscopy and sub-threshold channels at the corners of triple-gate FinFETs

scientific article published in 2006

Single-electron capacitance spectroscopy of individual dopants in silicon

scientific article published on 31 October 2011

Spatial metrology of dopants in silicon with exact lattice site precision.

scientific article published on 6 June 2016

Spatially resolved resonant tunneling on single atoms in silicon

scientific article published on 18 March 2015

Spatially resolving valley quantum interference of a donor in silicon

scientific article published on 6 April 2014

Specific detection by flow cytometry of histidine-tagged ligands bound to their receptors using a tag-specific monoclonal antibody

scientific journal article

Stark effect in shallow impurities inSi

scientific article published on 21 July 2004

Strain Sensitive Effect in a Triangular Lattice Photonic Crystal Hole-Modified Nanocavity

scientific article published in November 2011

Strain and electric field control of hyperfine interactions for donor spin qubits in silicon

scholarly article in Physical Review B, vol. 91 no. 24, June 2015

Strain sensitivity of a modified single-defect photonic crystal nanocavity for mechanical sensing

scientific article published in November 2010

Sub-threshold study of undoped trigate nFinFET

Subthreshold channels at the edges of nanoscale triple-gate silicon transistors

article

Superadiabatic quantum state transfer in spin chains

Surface polymerization of epitaxial Sb wires on Si(001)

scientific article published on 15 December 2000

Technology for nanoelectronic devices based on ultra-high vacuum scanning tunneling microscopy on the Si(100) surface

Ternary logic implemented on a single dopant atom field effect silicon transistor

article

Thermionic Emission as a Tool to Study Transport in Undoped nFinFETs

Towards visualisation of central-cell-effects in scanning tunnelling microscope images of subsurface dopant qubits in silicon.

scientific article published on 30 October 2017

Transmission measurement of the photonic band gap of GaN photonic crystal slabs

Transport Spectroscopy of a Single Dopant in a Gated Silicon Nanowire

scientific article published in Physical Review Letters

Transport spectroscopy of a single atom in a FinFET

Transport through a single donor in p-type silicon

Transport-based dopant metrology in advanced FinFETs

scholarly article published December 2008

Tunable Kondo Effect in a Single Donor Atom

scientific article published on 01 February 2010

Two-electron states of a group-V donor in silicon from atomistic full configuration interactions

scholarly article in Physical Review B, vol. 97 no. 19, May 2018

Upconversion of Microwave to Optical Photons using Erbium Impurities in a Solid

scientific article published in 2015

Valley Filtering in Spatial Maps of Coupling between Silicon Donors and Quantum Dots

Valley interference and spin exchange at the atomic scale in silicon

scientific article published on 30 November 2020

Wave function control over a single donor atom

scientific article published on 26 March 2013