List of works - Rajib Rahman

+Level Spectrum Of Single Gated As Donors

2D tunnel transistors for ultra-low power applications: Promises and challenges

article

A Multiscale Modeling of Triple-Heterojunction Tunneling FETs ⬇️

A many-electron tight binding method for the analysis of quantum dot systems

A predictive analytic model for high-performance tunneling field-effect transistors approaching non-equilibrium Green's function simulations

article

Ab-initio calculations of shallow dopant qubits in silicon from pseudopotential and all-electron mixed approach

scientific article published in 2022

Achieving a higher performance in bilayer graphene FET - strain engineering

Addressable electron spin resonance using donors and donor molecules in silicon

scientific article published on 13 July 2018

Aharonov–Bohm interference of fractional quantum Hall edge modes

scientific article published on 4 March 2019

Alloy Engineered Nitride Tunneling Field-Effect Transistor: A Solution for the Challenge of Heterojunction TFETs

article

Atomically engineered electron spin lifetimes of 30 s in silicon

scientific article

Atomistic Simulation of Realistically Sized Nanodevices Using NEMO 3-D—Part I: Models and Benchmarks

article

Atomistic simulation of steep subthreshold slope Bi-layer MoS 2 transistors

article

Atomistic simulations of adiabatic coherent electron transport in triple donor systems

scholarly article in Physical Review B, vol. 80 no. 3, July 2009

Can Homojunction Tunnel FETs Scale Below 10 nm? ⬇️

article by Hesameddin Ilatikhameneh et al published January 2016 in IEEE Electron Device Letters

Carrier leakage in Ge/Si core-shell nanocrystals for lasers: core size and strain effects

article

Channel Thickness Optimization for Ultrathin and 2-D Chemically Doped TFETs

Charge sensed Pauli blockade in a metal-oxide-semiconductor lateral double quantum dot.

scientific article published on 18 November 2013

Coherent control of a single ²⁹Si nuclear spin qubit. ⬇️

scientific article published on 9 December 2014

Coherent electron transport by adiabatic passage in an imperfect donor chain

scholarly article in Physical Review B, vol. 82 no. 15, October 2010

Combination of Equilibrium and Nonequilibrium Carrier Statistics Into an Atomistic Quantum Transport Model for Tunneling Heterojunctions

article published in 2017

Configurable Electrostatically Doped High Performance Bilayer Graphene Tunnel FET

Core size dependence of the confinement energies, barrier heights, and hole lifetimes in Ge-core/Si-shell nanocrystals

article

Design Rules for High Performance Tunnel Transistors From 2-D Materials ⬇️

article

Designing a large scale quantum computer with atomistic simulations

Determination of the eigenstates and wavefunctions of a single gated As donor

Dielectric Engineered Tunnel Field-Effect Transistor ⬇️

article

Direct Observation of 2D Electrostatics and Ohmic Contacts in Template-Grown Graphene/WS2 Heterostructures

scientific article published on 21 February 2017

Donor hyperfine Stark shift and the role of central-cell corrections in tight-binding theory. ⬇️

scientific article published on 18 March 2015

Dramatic Impact of Dimensionality on the Electrostatics of P-N Junctions and Its Sensing and Switching Applications

Effect of strain on the electronic and optical properties of Ge-Si dome shaped nanocrystals.

scientific article published on 10 December 2014

Eigenvalue solvers for atomistic simulations of electronic structures with NEMO-3D

Electric field reduced charging energies and two-electron bound excited states of single donors in silicon

article

Electrically Tunable Bandgaps in Bilayer MoS₂.

scientific article published on 11 November 2015

Electrically controlling single-spin qubits in a continuous microwave field ⬇️

scientific article published on 10 April 2015

Electrically doped 2D material tunnel transistor

article

Electrically doped WTe 2 tunnel transistors

article

Electron spin relaxation of single phosphorus donors and donor clusters in atomically engineered silicon devices

scientific article published in June 2017

Electronic states of Ge/Si nanocrystals with crescent-shaped Ge-cores

article

Engineered valley-orbit splittings in quantum-confined nanostructures in silicon

scholarly article in Physical Review B, vol. 83 no. 19, May 2011

Engineering the optical transitions of self-assembled quantum dots

Erratum: Lifetime-Enhanced Transport in Silicon due to Spin and Valley Blockade [Phys. Rev. Lett.107, 136602 (2011)]

scientific article published in Physical Review Letters

Extreme ultraviolet plasmonics and Cherenkov radiation in silicon

scientific article published on 7 December 2018

From Fowler–Nordheim to Nonequilibrium Green’s Function Modeling of Tunneling ⬇️

Gate-induced quantum-confinement transition of a single dopant atom in a silicon FinFET

scientific article published on 15 June 2008

Gate-inducedg-factor control and dimensional transition for donors in multivalley semiconductors

scholarly article in Physical Review B, vol. 80 no. 15, October 2009

High precision quantum control of single donor spins in silicon

scientific article published on 20 July 2007

III-N heterostructure devices for low-power logic

Innovative characterization techniques for ultra-scaled FinFETs

Interface-induced heavy-hole/light-hole splitting of acceptors in silicon ⬇️

Interface-induced spin-orbit interaction in silicon quantum dots and prospects for scalability

scientific article published on 4 June 2018

Lifetime-enhanced transport in silicon due to spin and valley blockade.

scientific article published on 19 September 2011

Mapping donor electron wave function deformations at a sub-Bohr orbit resolution.

scientific article published on 4 September 2009

Multiscale transport simulation of nanoelectronic devices with NEMO5

scientific article published in August 2016

Multiscale-multiphysics modeling of nonpolar InGaN LEDs

scientific article published in July 2017

Noninvasive spatial metrology of single-atom devices.

scientific article published on 18 April 2013

Novel III-N heterostructure devices for low-power logic and more

Nuclear spin induced decoherence of a quantum dot in Si confined at a SiGe interface: Decoherence dependence on73Ge

scholarly article in Physical Review B, vol. 85 no. 20, May 2012

Optimization of edge state velocity in the integer quantum Hall regime

scientific article published on 5 February 2018

Optimization of the anharmonic strain model to capture realistic strain distributions in quantum dots

Orbital Stark effect and quantum confinement transition of donors in silicon

scientific article published on 9 October 2009

Polarization-Engineered III-Nitride Heterojunction Tunnel Field-Effect Transistors

article

Publisher’s Note: Engineered valley-orbit splittings in quantum-confined nanostructures in silicon [Phys. Rev. B83, 195323 (2011)]

scholarly article in Physical Review B, vol. 83 no. 23, June 2011

Scaling Theory of Electrically Doped 2D Transistors ⬇️

article

Sensitivity Challenge of Steep Transistors

article

Silicon at the fundamental scaling limit-atomic-scale donor-based quantum electronics

Silicon quantum processor with robust long-distance qubit couplings.

scientific article published on 6 September 2017

Spatially resolved resonant tunneling on single atoms in silicon ⬇️

scientific article published on 18 March 2015

Spatially resolving valley quantum interference of a donor in silicon. ⬇️

scientific article published on 6 April 2014

Spin blockade and exchange in Coulomb-confined silicon double quantum dots.

scientific article published on 13 April 2014

Spin readout and addressability of phosphorus-donor clusters in silicon.

scientific article published in January 2013

Spin-lattice relaxation times of single donors and donor clusters in silicon. ⬇️

scientific article published on 11 December 2014

Spin–orbit coupling in silicon for electrons bound to donors

article by Bent Weber et al published 23 November 2018 in Npj Quantum Information

Stark tuning of the charge states of a two-donor molecule in silicon.

scientific article published in April 2011

Statistical modeling of ultra-scaled donor-based silicon phosphorus devices

Strain and electric field control of hyperfine interactions for donor spin qubits in silicon ⬇️

scholarly article in Physical Review B, vol. 91 no. 24, June 2015

Switching Mechanism and the Scalability of Vertical-TFETs

Symmetry Breaking and Fine Structure Splitting in Zincblende Quantum Dots: Atomistic Simulations of Long-Range Strain and Piezoelectric Field

Theoretical study of strain-dependent optical absorption in a doped self-assembled InAs/InGaAs/GaAs/AlGaAs quantum dot.

scientific article

Thickness Engineered Tunnel Field-Effect Transistors Based on Phosphorene ⬇️

article

Transport of spin qubits with donor chains under realistic experimental conditions ⬇️

scholarly article in Physical Review B, vol. 94 no. 4, July 2016

Transport spectroscopy of a single atom in a FinFET

Transport-based dopant metrology in advanced FinFETs

scholarly article published December 2008

Tunnel Field-Effect Transistors in 2-D Transition Metal Dichalcogenide Materials ⬇️

article

Two-electron states of a group-V donor in silicon from atomistic full configuration interactions

scholarly article in Physical Review B, vol. 97 no. 19, May 2018

Universal Behavior of Atomistic Strain in Self-Assembled Quantum Dots ⬇️

Valley Filtering in Spatial Maps of Coupling between Silicon Donors and Quantum Dots

Valley dependent anisotropic spin splitting in silicon quantum dots

scientific article published on 5 June 2018

Voltage controlled exchange energies of a two-electron silicon double quantum dot with and without charge defects in the dielectric

scholarly article in Physical Review B, vol. 85 no. 12, March 2012

List of works by Rajib Rahman

+Level Spectrum Of Single Gated As Donors

2D tunnel transistors for ultra-low power applications: Promises and challenges

A Multiscale Modeling of Triple-Heterojunction Tunneling FETs ⬇️

A many-electron tight binding method for the analysis of quantum dot systems

A predictive analytic model for high-performance tunneling field-effect transistors approaching non-equilibrium Green's function simulations

Ab-initio calculations of shallow dopant qubits in silicon from pseudopotential and all-electron mixed approach

Achieving a higher performance in bilayer graphene FET - strain engineering

Addressable electron spin resonance using donors and donor molecules in silicon

Aharonov–Bohm interference of fractional quantum Hall edge modes

Alloy Engineered Nitride Tunneling Field-Effect Transistor: A Solution for the Challenge of Heterojunction TFETs

Atomically engineered electron spin lifetimes of 30 s in silicon

Atomistic Simulation of Realistically Sized Nanodevices Using NEMO 3-D—Part I: Models and Benchmarks

Atomistic simulation of steep subthreshold slope Bi-layer MoS 2 transistors

Atomistic simulations of adiabatic coherent electron transport in triple donor systems

Can Homojunction Tunnel FETs Scale Below 10 nm? ⬇️

Carrier leakage in Ge/Si core-shell nanocrystals for lasers: core size and strain effects

Channel Thickness Optimization for Ultrathin and 2-D Chemically Doped TFETs

Charge sensed Pauli blockade in a metal-oxide-semiconductor lateral double quantum dot.

Coherent control of a single ²⁹Si nuclear spin qubit. ⬇️

Coherent electron transport by adiabatic passage in an imperfect donor chain

Combination of Equilibrium and Nonequilibrium Carrier Statistics Into an Atomistic Quantum Transport Model for Tunneling Heterojunctions

Configurable Electrostatically Doped High Performance Bilayer Graphene Tunnel FET

Core size dependence of the confinement energies, barrier heights, and hole lifetimes in Ge-core/Si-shell nanocrystals

Design Rules for High Performance Tunnel Transistors From 2-D Materials ⬇️

Designing a large scale quantum computer with atomistic simulations

Determination of the eigenstates and wavefunctions of a single gated As donor

Dielectric Engineered Tunnel Field-Effect Transistor ⬇️

Direct Observation of 2D Electrostatics and Ohmic Contacts in Template-Grown Graphene/WS2 Heterostructures

Donor hyperfine Stark shift and the role of central-cell corrections in tight-binding theory. ⬇️

Dramatic Impact of Dimensionality on the Electrostatics of P-N Junctions and Its Sensing and Switching Applications

Effect of strain on the electronic and optical properties of Ge-Si dome shaped nanocrystals.

Eigenvalue solvers for atomistic simulations of electronic structures with NEMO-3D

Electric field reduced charging energies and two-electron bound excited states of single donors in silicon

Electrically Tunable Bandgaps in Bilayer MoS₂.

Electrically controlling single-spin qubits in a continuous microwave field ⬇️

Electrically doped 2D material tunnel transistor

Electrically doped WTe 2 tunnel transistors

Electron spin relaxation of single phosphorus donors and donor clusters in atomically engineered silicon devices

Electronic states of Ge/Si nanocrystals with crescent-shaped Ge-cores

Engineered valley-orbit splittings in quantum-confined nanostructures in silicon

Engineering the optical transitions of self-assembled quantum dots

Erratum: Lifetime-Enhanced Transport in Silicon due to Spin and Valley Blockade [Phys. Rev. Lett.107, 136602 (2011)]

Extreme ultraviolet plasmonics and Cherenkov radiation in silicon

From Fowler–Nordheim to Nonequilibrium Green’s Function Modeling of Tunneling ⬇️

Gate-induced quantum-confinement transition of a single dopant atom in a silicon FinFET

Gate-inducedg-factor control and dimensional transition for donors in multivalley semiconductors

High precision quantum control of single donor spins in silicon

III-N heterostructure devices for low-power logic

Innovative characterization techniques for ultra-scaled FinFETs

Interface-induced heavy-hole/light-hole splitting of acceptors in silicon ⬇️

Interface-induced spin-orbit interaction in silicon quantum dots and prospects for scalability

Lifetime-enhanced transport in silicon due to spin and valley blockade.

Mapping donor electron wave function deformations at a sub-Bohr orbit resolution.

Multiscale transport simulation of nanoelectronic devices with NEMO5

Multiscale-multiphysics modeling of nonpolar InGaN LEDs

Noninvasive spatial metrology of single-atom devices.

Novel III-N heterostructure devices for low-power logic and more

Nuclear spin induced decoherence of a quantum dot in Si confined at a SiGe interface: Decoherence dependence on73Ge

Optimization of edge state velocity in the integer quantum Hall regime

Optimization of the anharmonic strain model to capture realistic strain distributions in quantum dots

Orbital Stark effect and quantum confinement transition of donors in silicon

Polarization-Engineered III-Nitride Heterojunction Tunnel Field-Effect Transistors

Publisher’s Note: Engineered valley-orbit splittings in quantum-confined nanostructures in silicon [Phys. Rev. B83, 195323 (2011)]

Scaling Theory of Electrically Doped 2D Transistors ⬇️

Sensitivity Challenge of Steep Transistors

Silicon at the fundamental scaling limit-atomic-scale donor-based quantum electronics

Silicon quantum processor with robust long-distance qubit couplings.

Spatially resolved resonant tunneling on single atoms in silicon ⬇️

Spatially resolving valley quantum interference of a donor in silicon. ⬇️

Spin blockade and exchange in Coulomb-confined silicon double quantum dots.

Spin readout and addressability of phosphorus-donor clusters in silicon.

Spin-lattice relaxation times of single donors and donor clusters in silicon. ⬇️

Spin–orbit coupling in silicon for electrons bound to donors

Stark tuning of the charge states of a two-donor molecule in silicon.

Statistical modeling of ultra-scaled donor-based silicon phosphorus devices

Strain and electric field control of hyperfine interactions for donor spin qubits in silicon ⬇️

Switching Mechanism and the Scalability of Vertical-TFETs

Symmetry Breaking and Fine Structure Splitting in Zincblende Quantum Dots: Atomistic Simulations of Long-Range Strain and Piezoelectric Field

Theoretical study of strain-dependent optical absorption in a doped self-assembled InAs/InGaAs/GaAs/AlGaAs quantum dot.