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List of works by Muhammad Usman

A Tight Binding Study of Strain-Reduced Confinement Potentials in Identical and Non-Identical InAs/GaAs Vertically Stacked Quantum Dots

Atomistic Simulation of Non-Degeneracy and Optical Polarization Anisotropy in Pyramidal Quantum Dots

Atomistic theoretical study of electronic and polarization properties of single and vertically stacked elliptical InAs quantum dots

scholarly article in Physical Review B, vol. 86 no. 15, October 2012

Atomistic tight binding study of quantum confined Stark effect in GaBi x As1-x /GaAs quantum wells

scientific article published on 09 July 2019

Atomistic tight-binding study of electronic structure and interband optical transitions in GaBixAs1−x/GaAs quantum wells ⬇️

Donor hyperfine Stark shift and the role of central-cell corrections in tight-binding theory. ⬇️

scientific article published on 18 March 2015

Electronic and optical properties of [110]-tilted InAs/GaAs quantum dot stacks ⬇️

scholarly article in Physical Review B, vol. 89 no. 8, February 2014

Experimental and atomistic theoretical study of degree of polarization from multilayer InAs/GaAs quantum dot stacks

scholarly article in Physical Review B, vol. 84 no. 11, September 2011

Experimental and theoretical study of polarization-dependent optical transitions in InAs quantum dots at telecommunication-wavelengths (1300-1500 nm)

scholarly article by M. Usman et al published 15 May 2011 in Journal of Applied Physics

In-plane polarization anisotropy of ground state optical intensity in InAs/GaAs quantum dots

Moving Toward Nano-TCAD Through Multimillion-Atom Quantum-Dot Simulations Matching Experimental Data

scholarly article by M. Usman et al published May 2009 in IEEE Nanotechnology Magazine

Quantitative excited state spectroscopy of a single InGaAs quantum dot molecule through multi-million-atom electronic structure calculations

article published in 2011

Quantum Confined Stark Shift and Ground State Optical Transition Rate in [100] Laterally Biased InAs/GaAs Quantum Dots

article

Size-dependent Electronic and Polarization Properties of Multi-Layer InAs Quantum Dot Molecules

Spatial metrology of dopants in silicon with exact lattice site precision. ⬇️

scientific article published on 6 June 2016

Strain and electric field control of hyperfine interactions for donor spin qubits in silicon ⬇️

scholarly article in Physical Review B, vol. 91 no. 24, June 2015

Strain-engineered self-organized InAs∕GaAs quantum dots for long wavelength (1.3 μm–1.5 μm) optical applications

The polarization response in InAs quantum dots: theoretical correlation between composition and electronic properties

article

Towards low-loss telecom-wavelength photonic devices by designing GaBixAs1-x/GaAs core-shell nanowires

scientific article published on 15 October 2019

Towards visualisation of central-cell-effects in scanning tunnelling microscope images of subsurface dopant qubits in silicon.

scientific article published on 30 October 2017

Tunable bandgap and isotropic light absorption from bismuth-containing GaAs core-shell and multi-shell nanowires

scientific article published on 14 October 2020

Tuning of polarization sensitivity in closely stacked trilayer InAs/GaAs quantum dots induced by overgrowth dynamics

article

Understanding polarization properties of InAs quantum dots by atomistic modeling of growth dynamics

Understanding the electric field control of the electronic and optical properties of strongly-coupled multi-layered quantum dot molecules. ⬇️

scientific article published on 23 September 2015

Valley interference and spin exchange at the atomic scale in silicon

scientific article published on 30 November 2020

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