A DC Method to Extract Mobility Degradation and Series Resistance of Multifinger Microwave MOSFETs

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A General Analytical solution to the One-Dimensional Undoped Oxide-Silicon-Oxide System

A New Method for Polynomial Coefficient Extraction Applied to Harmonic Distortion Calculation

A Review of Core Compact Models for Undoped Double-Gate SOI MOSFETs

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A Rigorous Classical Solution for the Drain Current of Doped Symmetric Double-Gate MOSFETs

A continuous semi-empiric transfer characteristics model for surrounding gate undoped polysilicon nanowire MOSFETs

A formula for the central potential’s maximum magnitude in arbitrarily doped symmetric double-gate MOSFETs

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A method to evaluate the location of the maximum value of a function with high level of noise

article by Adelmo Ortiz-Conde et al published January 2003 in Solid-State Electronics

A method to extract mobility degradation and total series resistance of fully-depleted SOI MOSFETs

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A minimal integral nonlinearity criterion to optimize the design of a new tanh/sinh-type bipolar transconductor

A new approach to extract the threshold voltage of MOSFETs

A new approach to the extraction of single exponential diode model parameters

A new integration-based procedure to separately extract series resistance and mobility degradation in MOSFETs

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A physics-based model for the substrate resistance of MOSFETs

A procedure for the extraction of the bulk-charge effect parameter in MOSFET models

A review of DC extraction methods for MOSFET series resistance and mobility degradation model parameters

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A review of recent MOSFET threshold voltage extraction methods

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A simple procedure to extract the threshold voltage of amorphous thin film MOSFETs in the saturation region

A study of the validity of capacitance-based method for extracting the effective channel length of MOSFET's

An Explicit Analytic Compact Model for Nanocrystalline Zinc Oxide Thin-Film Transistors

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An Explicit Multiexponential Model as an Alternative to Traditional Solar Cell Models With Series and Shunt Resistances

An explicit multi-exponential model for semiconductor junctions with series and shunt resistances

An improved method for extracting the difference between drain and source resistances in MOSFETs

article published in 1996

Analysis of the validity of methods for extracting the effective channel length of short-channel LDD MOSFETs

Analytic Solution of the Channel Potential in Undoped Symmetric Dual-Gate MOSFETs

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Approximate analytical expression for the tersminal voltage in multi-exponential diode models

Calculating double-exponential diode model parameters from previously extracted single-exponential model parameters

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Characterization of Thin-Film SOI PIN Diodes from Cryogenic to Above Room Temperatures Using an Explicit

Comments on “A sinh Resistor and Its Application to tanh Linearization”

Comments on “Highly Biased Linear Condition Method for Separately Extracting Source and Drain Resistance in MOSFETs”

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Compatibility of co-tunneling and power-law models of soft breakdown current in MOS structures

Conductance-to-Current-Ratio-Based Parameter Extraction in MOS Leakage Current Models

Determination of physical mechanisms contributing to the difference between drain and source resistances in short-channel MOSFETs

Determination of trap cross-section in a-Si:H p-i-n diodes parameters using simulation and parameter extraction

Direct extraction of semiconductor device parameters using lateral optimization method

Drain Current and Transconductance Model for the Undoped Body Asymmetric Double-Gate MOSFET

Evaluating MOSFET harmonic distortion by successive integration of the I–V characteristics

Exact analytical solution of channel surface potential as an explicit function of gate voltage in undoped-body MOSFETs using the Lambert W function and a threshold voltage definition therefrom

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Exact analytical solutions of the forward non-ideal diode equation with series and shunt parasitic resistances

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Extracting the series resistance and effective channel length of short-channel MOSFETs at liquid nitrogen temperature

Extraction method for polycrystalline TFT above and below threshold model parameters

article by M. Estrada et al published December 2002 in Solid-State Electronics

Extraction of MOSFET Model Parameters from the Measured Source-to-drain Resistance

Extraction of non-ideal junction model parameters from the explicit analytic solutions of its I–V characteristics

Generic complex-variable potential equation for the undoped asymmetric independent double-gate MOSFET

Harmonic distortion in MOSFETs calculated by successive integration of the transfer characteristics

Implementation of a comprehensive and robust MOSFET model in cadence SPICE for ESD applications

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Incomplete ionization in a semiconductor and its implications to device modeling

Indirect fitting procedure to separate the effects of mobility degradation and source-and-drain resistance in MOSFET parameter extraction

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Integration-based approach to evaluate the sub-threshold slope of MOSFETs

article by Adelmo Ortiz-Conde et al published February 2010 in Microelectronics and Reliability

Long-channel silicon-on-insulator MOSFET theory

Lumped Parameter Modeling of Organic Solar Cells’ S-Shaped I–V Characteristics

Modeling real junctions by a series combination of two ideal diodes with parallel resistance and its parameter extraction

article published in 2001

Modeling the Post-Breakdown Current in MOS devices on p-silicon substrate

New approach for defining the threshold voltage of MOSFETs

New method for determination of harmonic distortion in SOI FD transistors

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New procedure for the extraction of basic a-Si:H TFT model parameters in the linear and saturation regions

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New simple procedure to determine the threshold voltage of MOSFETs

article by F.J. Garcı́a Sánchez et al published April 2000 in Solid-State Electronics

On integration-based methods for MOSFET model parameter extraction

On the Threshold Voltage of Undoped Double-Gate SOI MOSFETs

On the extraction of the source and drain series resistances of MOSFETs

Parameter Extraction in Quadratic Exponential Junction Model with Series Resistance using Global Lateral Fitting

Parameter extraction in polysilicon nanowire MOSFETs using new double integration-based procedure

Postbreakdown Current in MOS Structures: Extraction of Parameters Using the Integral Difference Function Method

Procedure for determining diode parameters at very low forward voltage

Revisiting MOSFET threshold voltage extraction methods

article published in 2013

Rigorous analytic solution for the drain current of undoped symmetric dual-gate MOSFETs

Series resistance and effective channel length extraction of n-channel MOSFET at 77 K

Simple method for extracting the difference between the drain and source series resistances in MOSFETs

Subthreshold behavior of thin-film LPCVD PolySilicon MOSFET's

The development of integration-based methods to extract parameters of two-terminal device models

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The nonequilibrium inversion layer charge of the thin-film SOI MOSFET

article published in 1989

Thermal-avalanche interacting behaviour of multi-emitter finger heterojunction bipolar transistors

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Transformation Between Power-law and Polynomial Thin-Film Transistor Models

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Two-dimensional numerical analysis for extracting the effective channel length of short-channel MOSFETs

UNDOPED BODY SYMMETRIC DOUBLE GATE MOSFET MODELING

Understanding threshold voltage in undoped-body MOSFETs: An appraisal of various criteria

Unification of asymmetric DG, symmetric DG and bulk undoped-body MOSFET drain current