List of works - Arto Javanainen

12th European Conference on Accelerators in Applied Research and Technology

A Methodology for the Analysis of Memory Response to Radiation through Bitmap Superposition and Slicing

scientific article published in September 2015

A simple expression for electronic stopping force of heavy ions in solids

scientific article

A subthreshold, low-power, RHBD reference circuit, for earth observation and communication satellites

Application and development of ion-source technology for radiation-effects testing of electronics

scientific article

Assessment of Proton Direct Ionization for the Radiation Hardness Assurance of Deep Submicron SRAMs Used in Space Applications

Charge Transport Mechanisms in Heavy-Ion Driven Leakage Current in Silicon Carbide Schottky Power Diodes

scholarly article by Arto Javanainen et al published June 2016 in IEEE Transactions on Device and Materials Reliability

Current Transport Mechanism for Heavy-Ion Degraded SiC MOSFETs

Direct Ionization Impact on Accelerator Mixed-Field Soft-Error Rate

Dynamic Test Methods for COTS SRAMs

scientific article

Effects of Heavy Ion and Proton Irradiation on a SLC NAND Flash Memory

scientific article published in October 2019

Electron-Induced Upsets and Stuck Bits in SDRAMs in the Jovian Environment

Energy loss measurement of protons in liquid water

scientific article published on 22 March 2011

Enhanced Charge Collection in SiC Power MOSFETs Demonstrated by Pulse-Laser Two-Photon Absorption SEE Experiments

Estimating Terrestrial Neutron-Induced SEB Cross Sections and FIT Rates for High-Voltage SiC Power MOSFETs

Experimental Linear Energy Transfer of Heavy Ions in Silicon for RADEF Cocktail Species

Experimental Linear Energy Transfer of heavy ions in silicon for RADEF cocktail species

Failure Estimates for SiC Power MOSFETs in Space Electronics

scientific article

Heavy Ion Induced Degradation in SiC Schottky Diodes: Bias and Energy Deposition Dependence

Heavy Ion Induced Degradation in SiC Schottky Diodes: Incident Angle and Energy Deposition Dependence

Heavy-Ion Induced Charge Yield in MOSFETs

Heavy-Ion Microbeam Studies of Single-Event Leakage Current Mechanism in SiC VD-MOSFETs

Heavy-Ion Radiation Impact on a 4 Mb FRAM Under Different Test Modes and Conditions

scientific article

Heavy-Ion Radiation Impact on a 4Mb FRAM under Different Test Conditions

scientific article published in September 2015

Heavy-ion induced single event effects and latent damages in SiC power MOSFETs

scientific article

Impact of Electrical Stress and Neutron Irradiation on Reliability of Silicon Carbide Power MOSFET

scientific article published in July 2020

Impact of Terrestrial Neutrons on the Reliability of SiC VD-MOSFET Technologies

Incident angle effect on heavy ion induced reverse leakage current in SiC Schottky diodes

scientific article published in September 2016

Influence of Beam Conditions and Energy for SEE Testing

scientific article

Influence of beam conditions and energy for SEE testing

scientific article published in September 2011

Investigation on MCU Clustering Methodologies for Cross-Section Estimation of RAMs

scientific article

Ion-Induced Energy Pulse Mechanism for Single-Event Burnout in High-Voltage SiC Power MOSFETs and Junction Barrier Schottky Diodes

Linear Energy Transfer of Heavy Ions in Silicon

article published in 2007

Low Energy Protons at RADEF - Application to Advanced eSRAMs

scientific article published in July 2014

Low-Power, Subthreshold Reference Circuits for the Space Environment: Evaluated with γ-rays, X-rays, Protons and Heavy Ions

Mechanisms of Electron-Induced Single-Event Latchup

Mechanisms of Electron-Induced Single-Event Upsets in Medical and Experimental Linacs

Methodologies for the Statistical Analysis of Memory Response to Radiation

Microbeam SEE Analysis of MIM Capacitors for GaN Amplifiers

Molecular Dynamics Simulations of Heavy Ion Induced Defects in SiC Schottky Diodes

scientific article published in September 2018

New Insight into Single-Event Radiation Failure Mechanisms in Silicon Carbide Power Schottky Diodes and MOSFETs

scientific article published in July 2020

Parasitic Bipolar Action in SiC Power MOSFETs Demonstrated by Two-Photon Laser Experiment

scientific article published in September 2018

Proton Direct Ionization in Sub-Micron Technologies: Numerical Method for RPP Parameter Extraction

scientific article

Radiation Hardness Assurance Through System-Level Testing: Risk Acceptance, Facility Requirements, Test Methodology, and Data Exploitation

Radioluminescence Response of Ce-, Cu-, and Gd-Doped Silica Glasses for Dosimetry of Pulsed Electron Beams

scientific article

SEE on Different Layers of Stacked-SRAMs

scientific article

SEGR in SiO${}_2$–Si$_3$N$_4$ Stacks

SEGR in SiO<inf>2</inf>-Si<inf>3</inf>N<inf>4</inf> stacks

scientific article published in September 2013

SEU characterization of commercial and custom-designed SRAMs based on 90 nm technology and below

scholarly article published November 2020

Semi-Empirical LET Descriptions of Heavy Ions Used in the European Component Irradiation Facilities

Semi-Empirical Model for SEGR Prediction

Semi-empirical LET descriptions of heavy ions used in the European Component Irradiation Facilities

scientific article published in September 2009

Single Event Transients and Pulse Quenching Effects in Bandgap Reference Topologies for Space Applications

Single-Event Burnout Mechanisms in SiC Power MOSFETs

Single-Event Burnout of SiC Junction Barrier Schottky Diode High-Voltage Power Devices

Single-Event Effects in the Peripheral Circuitry of a Commercial Ferroelectric Random Access Memory

Statistical Analysis of Heavy-Ion Induced Gate Rupture in Power MOSFETs—Methodology for Radiation Hardness Assurance

The Pion Single-Event Effect Resonance and its Impact in an Accelerator Environment

article published in 2020

The Pion Single-Event Latch-Up Cross Section Enhancement: Mechanisms and Consequences for Accelerator Hardness Assurance

Unifying Concepts for Ion-Induced Leakage Current Degradation in Silicon Carbide Schottky Power Diodes

scholarly article by Robert A. Johnson et al published January 2020 in IEEE Transactions on Nuclear Science

List of works by Arto Javanainen

12th European Conference on Accelerators in Applied Research and Technology

A Methodology for the Analysis of Memory Response to Radiation through Bitmap Superposition and Slicing

A simple expression for electronic stopping force of heavy ions in solids

A subthreshold, low-power, RHBD reference circuit, for earth observation and communication satellites

Application and development of ion-source technology for radiation-effects testing of electronics

Assessment of Proton Direct Ionization for the Radiation Hardness Assurance of Deep Submicron SRAMs Used in Space Applications

Charge Transport Mechanisms in Heavy-Ion Driven Leakage Current in Silicon Carbide Schottky Power Diodes

Current Transport Mechanism for Heavy-Ion Degraded SiC MOSFETs

Direct Ionization Impact on Accelerator Mixed-Field Soft-Error Rate

Dynamic Test Methods for COTS SRAMs

Effects of Heavy Ion and Proton Irradiation on a SLC NAND Flash Memory

Electron-Induced Upsets and Stuck Bits in SDRAMs in the Jovian Environment

Energy loss measurement of protons in liquid water

Enhanced Charge Collection in SiC Power MOSFETs Demonstrated by Pulse-Laser Two-Photon Absorption SEE Experiments

Estimating Terrestrial Neutron-Induced SEB Cross Sections and FIT Rates for High-Voltage SiC Power MOSFETs

Experimental Linear Energy Transfer of Heavy Ions in Silicon for RADEF Cocktail Species

Experimental Linear Energy Transfer of heavy ions in silicon for RADEF cocktail species

Failure Estimates for SiC Power MOSFETs in Space Electronics

Heavy Ion Induced Degradation in SiC Schottky Diodes: Bias and Energy Deposition Dependence

Heavy Ion Induced Degradation in SiC Schottky Diodes: Incident Angle and Energy Deposition Dependence

Heavy-Ion Induced Charge Yield in MOSFETs

Heavy-Ion Microbeam Studies of Single-Event Leakage Current Mechanism in SiC VD-MOSFETs

Heavy-Ion Radiation Impact on a 4 Mb FRAM Under Different Test Modes and Conditions

Heavy-Ion Radiation Impact on a 4Mb FRAM under Different Test Conditions

Heavy-ion induced single event effects and latent damages in SiC power MOSFETs

Impact of Electrical Stress and Neutron Irradiation on Reliability of Silicon Carbide Power MOSFET

Impact of Terrestrial Neutrons on the Reliability of SiC VD-MOSFET Technologies

Incident angle effect on heavy ion induced reverse leakage current in SiC Schottky diodes

Influence of Beam Conditions and Energy for SEE Testing

Influence of beam conditions and energy for SEE testing

Investigation on MCU Clustering Methodologies for Cross-Section Estimation of RAMs

Ion-Induced Energy Pulse Mechanism for Single-Event Burnout in High-Voltage SiC Power MOSFETs and Junction Barrier Schottky Diodes

Linear Energy Transfer of Heavy Ions in Silicon

Low Energy Protons at RADEF - Application to Advanced eSRAMs

Low-Power, Subthreshold Reference Circuits for the Space Environment: Evaluated with γ-rays, X-rays, Protons and Heavy Ions

Mechanisms of Electron-Induced Single-Event Latchup

Mechanisms of Electron-Induced Single-Event Upsets in Medical and Experimental Linacs

Methodologies for the Statistical Analysis of Memory Response to Radiation

Microbeam SEE Analysis of MIM Capacitors for GaN Amplifiers

Molecular Dynamics Simulations of Heavy Ion Induced Defects in SiC Schottky Diodes

New Insight into Single-Event Radiation Failure Mechanisms in Silicon Carbide Power Schottky Diodes and MOSFETs

Parasitic Bipolar Action in SiC Power MOSFETs Demonstrated by Two-Photon Laser Experiment

Proton Direct Ionization in Sub-Micron Technologies: Numerical Method for RPP Parameter Extraction

Radiation Hardness Assurance Through System-Level Testing: Risk Acceptance, Facility Requirements, Test Methodology, and Data Exploitation

Radioluminescence Response of Ce-, Cu-, and Gd-Doped Silica Glasses for Dosimetry of Pulsed Electron Beams

SEE on Different Layers of Stacked-SRAMs

SEGR in SiO${}_2$–Si$_3$N$_4$ Stacks

SEGR in SiO<inf>2</inf>-Si<inf>3</inf>N<inf>4</inf> stacks

SEU characterization of commercial and custom-designed SRAMs based on 90 nm technology and below

Semi-Empirical LET Descriptions of Heavy Ions Used in the European Component Irradiation Facilities

Semi-Empirical Model for SEGR Prediction

Semi-empirical LET descriptions of heavy ions used in the European Component Irradiation Facilities

Single Event Transients and Pulse Quenching Effects in Bandgap Reference Topologies for Space Applications

Single-Event Burnout Mechanisms in SiC Power MOSFETs

Single-Event Burnout of SiC Junction Barrier Schottky Diode High-Voltage Power Devices

Single-Event Effects in the Peripheral Circuitry of a Commercial Ferroelectric Random Access Memory

Statistical Analysis of Heavy-Ion Induced Gate Rupture in Power MOSFETs—Methodology for Radiation Hardness Assurance

The Pion Single-Event Effect Resonance and its Impact in an Accelerator Environment

The Pion Single-Event Latch-Up Cross Section Enhancement: Mechanisms and Consequences for Accelerator Hardness Assurance

Unifying Concepts for Ion-Induced Leakage Current Degradation in Silicon Carbide Schottky Power Diodes