A technique for large-area position-controlled growth of GaAs nanowire arrays

scientific article published on 19 February 2016

Analysis of Dislocations Generated during Metal–Organic Vapor Phase Epitaxy of GaN on Patterned Templates

Comparison of ammonia plasma and AlN passivation by plasma-enhanced atomic layer deposition

Effect of atomic-layer-deposited AlN on near-surface InGaAs/GaAs structures

Enhanced optical properties of in situ passivated near‐surface AlxGa1−xAs/GaAs quantum wells

article published in 1996

Evaluation of critical thickness of GaP0.98N0.02 layer on GaP substrate by synchrotron X-ray diffraction topography

Fabrication and photoluminescence of quantum dots induced by strain of self-organized stressors

Fabrication of GaInAs quantum disks using self‐organized InP islands as a mask in wet chemical etching

article by Markku Sopanen et al published 23 December 1996 in Applied Physics Letters

Fabrication of nanostructures using MBE and MOVPE

GaAs Nanowire and Crystallite Growth on Amorphous Substrate from Metalorganic Precursors

Growth and characterization of GaP layers on silicon substrates by metal-organic vapour phase epitaxy

article

Growth of GaInAsSb using tertiarybutylarsine as arsenic source

Growth of high-quality GaSb by metalorganic vapor phase epitaxy

High quality GaAs nanowires grown on glass substrates

scientific article

High-k GaAs metal insulator semiconductor capacitors passivated by ex-situ plasma-enhanced atomic layer deposited AlN for Fermi-level unpinning

InGaN-based 405 nm near-ultraviolet light emitting diodes on pillar patterned sapphire substrates

Luminescence from excited states in strain-inducedInxGa1−xAs quantum dots

scientific article published on 01 May 1995

Metal Contacts on InN: Proposal for Schottky Contact

Metalorganic vapor phase epitaxial growth of AlGaSb and AlGaAsSb using all-organometallic sources

Optical properties of self-organized InGaAs/InP dots

Photoluminescence of buried InGaAs grown on nanoscale InP islands by MOVPE

article published in 1994

Properties of atomic-layer-deposited ultra-thin AlN films on GaAs surfaces

Recombination processes in strain-induced InGaAs quantum dots

scientific article

Red luminescence from strain‐induced GaInP quantum dots

article published in 1996

Selective growth of InGaAs on nanoscale InP islands

Self‐organized InP islands on (100) GaAs by metalorganic vapor phase epitaxy

Strain‐induced quantum dots by self‐organized stressors

Structural study of GaP layers on misoriented silicon (001) substrates by transverse scan analysis

Substitutionality of nitrogen atoms and formation of nitrogen complexes and point defects in GaPN alloys

Synchrotron radiation X-ray topography and X-ray diffraction of homoepitaxial GaN grown on ammonothermal GaN

article published in 2012

Temperature Dependence Of Current-Voltage Characteristics Of Pt∕InN Schottky Barrier Diodes

Tunneling Explanation for the Temperature Dependence of Current–Voltage Characteristics of Pt/InN Schottky Barrier Diodes

Zeeman Effect in Parabolic Quantum Dots

scientific article published in Physical Review Letters