List of works - Maria Tchernycheva

A simplified GaN/AlGaN quantum cascade detector with an alloy extractor

scientific article published on 17 December 2012

Assessing individual radial junction solar cells over millions on VLS-grown silicon nanowires

scientific article

Au-assisted molecular beam epitaxy of InAs nanowires: Growth and theoretical analysis

Ballistic transport in GaN/AlGaN resonant tunneling diodes

scientific article published on 15 January 2011

Band offsets in cubic GaN/AlN superlattices

scientific article published on 4 May 2011

Broadening of intersubband transitions in InGaN/AlInN multiquantum wells

scientific article published in May 2010

Cathodoluminescence spectra of gallium nitride nanorods

scientific article published on 14 December 2011

Characterization and modeling of a ZnO nanowire ultraviolet photodetector with graphene transparent contact

scientific article published on 21 December 2013

Characterization of high index microsphere resonators in fiber-integrated microfluidic platforms

scientific article published on 10 February 2011

Characterization of the Resonant Third-Order Nonlinear Susceptibility of Si-Doped GaN–AlN Quantum Wells and Quantum Dots at 1.5 $\mu$m

Contact properties to CVD-graphene on GaAs substrates for optoelectronic applications

scientific article published on 30 July 2014

Contactless electroreflectance spectroscopy of inter- and intersub-band transitions in AlInN/GaInN quantum wells

scientific article published in February 2008

Core–shell InGaN/GaN nanowire light emitting diodes analyzed by electron beam induced current microscopy and cathodoluminescence mapping

scientific article published in 2015

Correlated optical and electrical analyses of inhomogeneous core/shell InGaN/GaN nanowire light emitting diodes

scientific article published on 03 November 2020

Correlation of microphotoluminescence spectroscopy, scanning transmission electron microscopy, and atom probe tomography on a single nano-object containing an InGaN/GaN multiquantum well system

scientific article published on 18 December 2013

Correlation of optical and structural properties of GaN/AlN core-shell nanowires

scientific article published on 21 April 2011

Corrigendum: Optical properties of GaN nanowires grown on chemical vapor deposited-graphene (2019 Nanotechnology 30 214005)

scientific article published on 30 July 2020

Cubic III-nitride coupled quantum wells towards unipolar optically pumped lasers

scientific article published on 25 January 2013

Double strain state in a single GaN/AlN nanowire: Probing the core-shell effect by ultraviolet resonant Raman scattering

scientific article published on 10 March 2011

Effect of deposition conditions on nanowhisker morphology

scientific article published in July 2007

Effect of diffusion from a lateral surface on the rate of GaN nanowire growth

Effect of doping on the mid-infrared intersubband absorption in GaN/AlGaN superlattices grown on Si(111) templates

article published in 2010

Effect of postgrowth heat treatment on the structural and optical properties of InP/InAsP/InP nanowires

Electrical detection of picosecond acoustic pulses in vertical transport devices with nanowires

Electro-optical intersubband modulators at telecommunication wavelengths based on GaN/AlN quantum wells

scholarly article by N. Kheirodin et al published May 2008 in Physica Status Solidi A

Electron confinement in strongly coupled GaN∕AlN quantum wells

Electrooptical Modulator at Telecommunication Wavelengths Based on GaN–AlN Coupled Quantum Wells

scholarly article by N. Kheirodin et al published May 2008 in IEEE Photonics Technology Letters

Experimental and theoretical analysis of transport properties of core-shell wire light emitting diodes probed by electron beam induced current microscopy.

scientific article published on 4 June 2014

Experimental demonstration and observation of a plasmon wave occuring at a GaAs–Au–GaN interface

scientific article published on 5 July 2013

Facet and in-plane crystallographic orientations of GaN nanowires grown on Si(111)

scientific article published on 12 March 2008

Femto-second electron transit time characterization in GaN/AlGaN quantum cascade detector at 1.5 micron

article published in 2011

First demonstration of plasmonic GaN quantum cascade detectors with enhanced efficiency at normal incidence

scientific article published on 22 August 2014

Flexible Light-Emitting Diodes Based on Vertical Nitride Nanowires.

scientific article published on 31 August 2015

Flexible inorganic light emitting diodes based on semiconductor nanowires.

scientific article published on 2 October 2017

GaAs nanowires formed by Au-assisted molecular beam epitaxy: Effect of growth temperature

GaN nanowire ultraviolet photodetector with a graphene transparent contact

scientific article published on 11 November 2013

GaN-based quantum cascade photodetector with 1.5 [micro sign]m peak detection wavelength

GaN/AlGaN intersubband optoelectronic devices

GaN/AlGaN intersubband optoelectronic devices at telecommunication wavelengths

scholarly article published 24 January 2009

GaN/AlGaN nanostructures for intersubband optoelectronics

GaN/AlGaN superlattices for optoelectronics in the mid-infrared

GaN/AlGaN waveguide quantum cascade photodetectors at λ ≈ 1.55 μm with enhanced responsivity and ∼40 GHz frequency bandwidth

GaN/AlN free-standing nanowires grown by molecular beam epitaxy

GaN/AlN quantum disc single-nanowire photodetectors

GaN/AlN quantum dot photodetectors at 1.3–1.5 μm

GaN/AlN short-period superlattices for intersubband optoelectronics: A systematic study of their epitaxial growth, design, and performance

article by P. K. Kandaswamy et al published November 2008 in Journal of Applied Physics

Growth and Characterization of InP Nanowires with InAsP Insertions

scientific article published on 05 May 2007

Growth and characterization of AlInN/GaInN quantum wells for high-speed intersubband devices at telecommunication wavelengths

scientific article published on 9 February 2006

Growth of GaN free-standing nanowires by plasma-assisted molecular beam epitaxy: structural and optical characterization

Growth of Inclined GaAs Nanowires by Molecular Beam Epitaxy: Theory and Experiment

scientific article

Growth of intersubband GaN/AlGaN heterostructures

scientific article published on 23 January 2010

Growth of thin AlInN∕GaInN quantum wells for applications to high-speed intersubband devices at telecommunication wavelengths

scientific article published in 2006

Heat Dissipation in Flexible Nitride Nanowire Light-Emitting Diodes

scientific article published on 16 November 2020

High Piezoelectric Conversion Properties of Axial InGaN/GaN Nanowires

scientific article published on 25 May 2018

High degree of polarization of the near-band-edge photoluminescence in ZnO nanowires

scientific article published on 19 August 2011

High-speed operation of GaN/AlGaN quantum cascade detectors at λ≈1.55 μm

Homogeneous linewidth of the intraband transition at 1.55 μm in GaN/AlN quantum dots

III-nitride intersubband photonics

III-nitride semiconductors for intersubband devices

Improvement of carrier collection in Si/a-Si:H nanowire solar cells by using hybrid ITO/silver nanowires contacts

scientific article published on 10 July 2020

InGaN/GaN core-shell single nanowire light emitting diodes with graphene-based p-contact.

scientific article published on 23 April 2014

Indium surfactant effect on AlN∕GaN heterostructures grown by metal-organic vapor-phase epitaxy: Applications to intersubband transitions

scientific article published on 10 April 2006

Influence of shadow effect on the growth and shape of InAs nanowires

scientific article published on 15 May 2012

Integrated Photonic Platform Based on InGaN/GaN Nanowire Emitters and Detectors

scientific article published on 22 May 2014

Interband and intersubband optical characterization of semipolar (112¯2)-oriented GaN/AlN multiple-quantum-well structures

Interplay of the photovoltaic and photoconductive operation modes in visible-blind photodetectors based on axial p-i-n junction GaN nanowires

scientific article published on 13 January 2014

Intersubband absorption of cubic GaN/Al(Ga)N quantum wells in the near-infrared to terahertz spectral range

scientific article published on 23 February 2011

Intersubband absorptions in doped and undoped GaN/AlN quantum wells at telecommunication wavelengths

scholarly article by A. Helman et al published April 2004 in Physica Status Solidi C: Current Topics in Solid State Physics

Intersubband optics in GaN-based nanostructures - physics and applications

Intersubband resonant enhancement of second-harmonic generation in GaN∕AlN quantum wells

Intersubband spectroscopy of doped and undoped GaN/AlN quantum wells grown by molecular-beam epitaxy

Intraband absorption of doped GaN∕AlN quantum dots at telecommunication wavelengths

scholarly article by Maria Tchernycheva et al published 5 September 2005 in Applied Physics Letters

Intraband absorptions in GaN/AlN quantum dots in the wavelength range of 1.27–2.4 μm

scientific article published on 10 February 2003

Intraband emission at λ≈1.48μm from GaN∕AlN quantum dots at room temperature

Intraband light absorption in InAs/GaAs quantum dots covered with InGaAs quantum wells

scientific article published on 2 August 2006

Intraband photodetection at 1.3–1.5 µm in self-organized GaN/AlN quantum dots

Intraband spectroscopy of self-organized GaN/AlN quantum dots

scientific article published in April 2003

Investigation of Photovoltaic Properties of Single Core–Shell GaN/InGaN Wires

scientific article published on 28 September 2015

Investigation of the effect of the doping order in GaN nanowire p-n junctions grown by molecular-beam epitaxy

scientific article published on 10 November 2020

Investigation of the electronic transport in GaN nanowires containing GaN/AlN quantum discs

scientific article

Lateral growth and shape of semiconductor nanowires

scientific article published in January 2013

Latest developments in GaN-based quantum devices for infrared optoelectronics

M-Plane Core–Shell InGaN/GaN Multiple-Quantum-Wells on GaN Wires for Electroluminescent Devices

scientific article published on 9 November 2011

MBE growth of nitride-based photovoltaic intersubband detectors

Midinfrared intersubband absorption in GaN/AlGaN superlattices on Si(111) templates

Midinfrared intersubband absorption in lattice-matched AlInN∕GaN multiple quantum wells

scientific article published on 12 September 2005

Nanometer scale spectral imaging of quantum emitters in nanowires and its correlation to their atomically resolved structure.

scientific article

Near infrared quantum cascade detector in GaN∕AlGaN∕AlN heterostructures

Near-infrared intersubband emission from GaN/AlN quantum dots and quantum wells

New developments for nitride unipolar devices at 1.3–1.5 μm wavelengths

Nitride intersubband devices: prospects and recent developments

Nitride-based heterostructures grown by MOCVD for near- and mid-infrared intersubband transitions

scientific article published in April 2007

Observation of hot luminescence and slow inter-sub-band relaxation in Si-doped GaN∕AlxGa1−xN (x=0.11, 0.25) multi-quantum-well structures

article published in 2006

Optical and theoretical study of strong electron coupling in double GaN/AlN quantum wells

Optical characterization of AlGaN/GaN quantum disc structures in single nanowires

Optical properties of GaN-based nanowires containing a single Al0.14Ga0.86N/GaN quantum disc

scientific article published on 4 March 2013

Optical properties of wurtzite/zinc-blende heterostructures in GaN nanowires

scientific article published on 15 September 2011

Origin of energy dispersion inAlxGa1−xN/GaNnanowire quantum discs with low Al content

scholarly article in Physical Review B, vol. 82 no. 23, December 2010

Origin of the electrical instabilities in GaN/AlGaN double-barrier structure

scientific article published on 3 October 2011

Photoluminescence polarization in strained GaN/AlGaN core/shell nanowires

scientific article published on 17 July 2012

Photoluminescence polarization properties of single GaN nanowires containingAlxGa1−xN/GaNquantum discs

scholarly article in Physical Review B, vol. 81 no. 4, January 2010

Photovoltaic properties of GaAs:Be nanowire arrays

scientific article published in June 2013

Photovoltaic properties of GaAsP core–shell nanowires on Si(001) substrate

Polar and semipolar III-nitrides for long wavelength intersubband devices

Potential of semiconductor nanowires for single photon sources

Publisher's Note: “A 5.7 THz GaN/AlGaN quantum cascade detector based on polar step quantum wells” [Appl. Phys. Lett. <b>120</b>, 171103 (2022)]

scientific article published in 2022

Resonant Tunneling Transport in a GaN/AlN Multiple-Quantum-Well Structure

Review of nitride infrared intersubband devices

scientific article published on 11 February 2010

Room temperature demonstration of GaN∕AlN quantum dot intraband infrared photodetector at fiber-optics communication wavelength

article by A. Vardi et al published 3 April 2006 in Applied Physics Letters

Room temperature intraband Raman emission and ultrafast carrier relaxation in GaN/AlN quantum dots

Self-assembled GaN quantum wires on GaN/AlN nanowire templates

scientific article published in December 2012

Shape modification of III-V nanowires: The role of nucleation on sidewalls

scientific article published on 14 March 2008

Short wavelength (λ=2.13μm) intersubband luminescence from GaN∕AlN quantum wells at room temperature

Short-wavelength intersubband electroabsorption modulation based on electron tunneling between GaN∕AlN coupled quantum wells

Si Incorporation in InP Nanowires Grown by Au-Assisted Molecular Beam Epitaxy

Si-doped GaN/AlN quantum dot superlattices for optoelectronics at telecommunication wavelengths

scholarly article by F. Guillot et al published May 2006 in Physica Status Solidi A

Si-doped GaN∕AlN quantum dot superlattices for optoelectronics at telecommunication wavelengths

scholarly article by F. Guillot et al published 15 August 2006 in Journal of Applied Physics

Single-Wire Light-Emitting Diodes Based on GaN Wires Containing Both Polar and Nonpolar InGaN/GaN Quantum Wells

scientific article published on 16 December 2011

Single-wire photodetectors based on InGaN/GaN radial quantum wells in GaN wires grown by catalyst-free metal-organic vapor phase epitaxy

scientific article published on 6 June 2011

Spectroscopy of the electron states in self-organized GaN/AlN quantum dots

Strain effects in GaN/AlN multi-quantum-well structures for infrared optoelectronics

Structural and optical characterizations of nitrogen-doped ZnO nanowires grown by MOCVD

scientific article published in October 2010

Study of the electrical properties of individual (Ga,Mn)As nanowires

scientific article published in March 2014

Systematic experimental and theoretical investigation of intersubband absorption inGaN∕AlNquantum wells

scholarly article in Physical Review B, vol. 73 no. 12, March 2006

Systematic study of near-infrared intersubband absorption of polar and semipolar GaN/AlN quantum wells

Temperature conditions for GaAs nanowire formation by Au-assisted molecular beam epitaxy

scientific article published on 14 July 2006

Terahertz intersubband absorption in GaN/AlGaN step quantum wells

article by H. Machhadani et al published 8 November 2010 in Applied Physics Letters

Two-color GaN/AlGaN quantum cascade detector at short infrared wavelengths of 1 and 1.7 μm

scientific article published on 30 April 2012

Ultrafast relaxation and optical saturation of intraband absorption of GaN/AlN quantum dots

Ultraviolet Photodetector Based on GaN/AlN Quantum Disks in a Single Nanowire

scientific article published on 11 August 2010

Vertical Transport in GaN/AlGaN Resonant Tunneling Diodes and Superlattices

scientific article published on 17 February 2012

Visible-blind photodetector based on p–i–n junction GaN nanowire ensembles

scientific article published on 15 July 2010

Visualizing highly localized luminescence in GaN/AlN heterostructures in nanowires

scientific article

Wurtzite to Zinc Blende Phase Transition in GaAs Nanowires Induced by Epitaxial Burying

scientific article published on 10 May 2008

List of works by Maria Tchernycheva

A simplified GaN/AlGaN quantum cascade detector with an alloy extractor

Assessing individual radial junction solar cells over millions on VLS-grown silicon nanowires

Au-assisted molecular beam epitaxy of InAs nanowires: Growth and theoretical analysis

Ballistic transport in GaN/AlGaN resonant tunneling diodes

Band offsets in cubic GaN/AlN superlattices

Broadening of intersubband transitions in InGaN/AlInN multiquantum wells

Cathodoluminescence spectra of gallium nitride nanorods

Characterization and modeling of a ZnO nanowire ultraviolet photodetector with graphene transparent contact

Characterization of high index microsphere resonators in fiber-integrated microfluidic platforms

Characterization of the Resonant Third-Order Nonlinear Susceptibility of Si-Doped GaN–AlN Quantum Wells and Quantum Dots at 1.5 $\mu$m

Contact properties to CVD-graphene on GaAs substrates for optoelectronic applications

Contactless electroreflectance spectroscopy of inter- and intersub-band transitions in AlInN/GaInN quantum wells

Core–shell InGaN/GaN nanowire light emitting diodes analyzed by electron beam induced current microscopy and cathodoluminescence mapping

Correlated optical and electrical analyses of inhomogeneous core/shell InGaN/GaN nanowire light emitting diodes

Correlation of microphotoluminescence spectroscopy, scanning transmission electron microscopy, and atom probe tomography on a single nano-object containing an InGaN/GaN multiquantum well system

Correlation of optical and structural properties of GaN/AlN core-shell nanowires

Corrigendum: Optical properties of GaN nanowires grown on chemical vapor deposited-graphene (2019 Nanotechnology 30 214005)

Cubic III-nitride coupled quantum wells towards unipolar optically pumped lasers

Double strain state in a single GaN/AlN nanowire: Probing the core-shell effect by ultraviolet resonant Raman scattering

Effect of deposition conditions on nanowhisker morphology

Effect of diffusion from a lateral surface on the rate of GaN nanowire growth

Effect of doping on the mid-infrared intersubband absorption in GaN/AlGaN superlattices grown on Si(111) templates

Effect of postgrowth heat treatment on the structural and optical properties of InP/InAsP/InP nanowires

Electrical detection of picosecond acoustic pulses in vertical transport devices with nanowires

Electro-optical intersubband modulators at telecommunication wavelengths based on GaN/AlN quantum wells

Electron confinement in strongly coupled GaN∕AlN quantum wells

Electrooptical Modulator at Telecommunication Wavelengths Based on GaN–AlN Coupled Quantum Wells

Experimental and theoretical analysis of transport properties of core-shell wire light emitting diodes probed by electron beam induced current microscopy.

Experimental demonstration and observation of a plasmon wave occuring at a GaAs–Au–GaN interface

Facet and in-plane crystallographic orientations of GaN nanowires grown on Si(111)

Femto-second electron transit time characterization in GaN/AlGaN quantum cascade detector at 1.5 micron

First demonstration of plasmonic GaN quantum cascade detectors with enhanced efficiency at normal incidence

Flexible Light-Emitting Diodes Based on Vertical Nitride Nanowires.

Flexible inorganic light emitting diodes based on semiconductor nanowires.

GaAs nanowires formed by Au-assisted molecular beam epitaxy: Effect of growth temperature

GaN nanowire ultraviolet photodetector with a graphene transparent contact

GaN-based quantum cascade photodetector with 1.5 [micro sign]m peak detection wavelength

GaN/AlGaN intersubband optoelectronic devices

GaN/AlGaN intersubband optoelectronic devices at telecommunication wavelengths

GaN/AlGaN nanostructures for intersubband optoelectronics

GaN/AlGaN superlattices for optoelectronics in the mid-infrared

GaN/AlGaN waveguide quantum cascade photodetectors at λ ≈ 1.55 μm with enhanced responsivity and ∼40 GHz frequency bandwidth

GaN/AlN free-standing nanowires grown by molecular beam epitaxy

GaN/AlN quantum disc single-nanowire photodetectors

GaN/AlN quantum dot photodetectors at 1.3–1.5 μm

GaN/AlN short-period superlattices for intersubband optoelectronics: A systematic study of their epitaxial growth, design, and performance

Growth and Characterization of InP Nanowires with InAsP Insertions

Growth and characterization of AlInN/GaInN quantum wells for high-speed intersubband devices at telecommunication wavelengths

Growth of GaN free-standing nanowires by plasma-assisted molecular beam epitaxy: structural and optical characterization

Growth of Inclined GaAs Nanowires by Molecular Beam Epitaxy: Theory and Experiment

Growth of intersubband GaN/AlGaN heterostructures

Growth of thin AlInN∕GaInN quantum wells for applications to high-speed intersubband devices at telecommunication wavelengths

Heat Dissipation in Flexible Nitride Nanowire Light-Emitting Diodes

High Piezoelectric Conversion Properties of Axial InGaN/GaN Nanowires

High degree of polarization of the near-band-edge photoluminescence in ZnO nanowires

High-speed operation of GaN/AlGaN quantum cascade detectors at λ≈1.55 μm

Homogeneous linewidth of the intraband transition at 1.55 μm in GaN/AlN quantum dots

III-nitride intersubband photonics

III-nitride semiconductors for intersubband devices

Improvement of carrier collection in Si/a-Si:H nanowire solar cells by using hybrid ITO/silver nanowires contacts

InGaN/GaN core-shell single nanowire light emitting diodes with graphene-based p-contact.

Indium surfactant effect on AlN∕GaN heterostructures grown by metal-organic vapor-phase epitaxy: Applications to intersubband transitions

Influence of shadow effect on the growth and shape of InAs nanowires

Integrated Photonic Platform Based on InGaN/GaN Nanowire Emitters and Detectors

Interband and intersubband optical characterization of semipolar (112¯2)-oriented GaN/AlN multiple-quantum-well structures

Interplay of the photovoltaic and photoconductive operation modes in visible-blind photodetectors based on axial p-i-n junction GaN nanowires

Intersubband absorption of cubic GaN/Al(Ga)N quantum wells in the near-infrared to terahertz spectral range

Intersubband absorptions in doped and undoped GaN/AlN quantum wells at telecommunication wavelengths

Intersubband optics in GaN-based nanostructures - physics and applications

Intersubband resonant enhancement of second-harmonic generation in GaN∕AlN quantum wells

Intersubband spectroscopy of doped and undoped GaN/AlN quantum wells grown by molecular-beam epitaxy

Intraband absorption of doped GaN∕AlN quantum dots at telecommunication wavelengths

Intraband absorptions in GaN/AlN quantum dots in the wavelength range of 1.27–2.4 μm

Intraband emission at λ≈1.48μm from GaN∕AlN quantum dots at room temperature

Intraband light absorption in InAs/GaAs quantum dots covered with InGaAs quantum wells

Intraband photodetection at 1.3–1.5 µm in self-organized GaN/AlN quantum dots

Intraband spectroscopy of self-organized GaN/AlN quantum dots

Investigation of Photovoltaic Properties of Single Core–Shell GaN/InGaN Wires

Investigation of the effect of the doping order in GaN nanowire p-n junctions grown by molecular-beam epitaxy