A single-pixel wireless contact lens display

A technique for large-area position-controlled growth of GaAs nanowire arrays

scientific article published on 19 February 2016

An investigation of structural properties of GaN films grown on patterned sapphire substrates by MOVPE

Analysis of Dislocations Generated during Metal–Organic Vapor Phase Epitaxy of GaN on Patterned Templates

Analysis of threading dislocations in void shape controlled GaN re-grown on hexagonally patterned mask-less GaN

article

Atomic layer etching of gallium nitride (0001)

scientific article published in November 2017

Band-Edge Luminescence Degradation by Low Energy Electron Beam Irradiation in GaN Grown by Metal–Organic Vapor Phase Epitaxy in H2and N2Ambients

Characterization of InGaN/GaN and AlGaN/GaN superlattices by X-ray diffraction and X-ray reflectivity measurements

article published in 2010

Control of the morphology of InGaN/GaN quantum wells grown by metalorganic chemical vapor deposition

Defect structure of a free standing GaN wafer grown by the ammonothermal method

Defect studies with positrons: What could we learn on III-nitride heterostructures?

Diffusion Injection in a Buried Multiquantum Well Light-Emitting Diode Structure

Diffusion injected multi-quantum well light-emitting diode structure

Diffusion-driven current transport to near-surface nanostructures

Effect of growth conditions on electrical properties of Mg-doped p-GaN

Effect of growth temperature on the epitaxial growth of ZnO on GaN by ALD

Electrical injection to contactless near-surface InGaN quantum well

Electrical measurement of internal quantum efficiency and extraction efficiency of III-N light-emitting diodes

Elimination of resistive losses in large-area LEDs by new diffusion-driven devices

Emission of terahertz radiation from GaN under impact ionization of donors in an electric field

Enhanced electroluminescence in 405nm InGaN/GaN LEDs by optimized electron blocking layer

Enhanced light extraction from InGaN/GaN quantum wells with silver gratings

Enhancement of near-UV GaN LED light extraction efficiency by GaN/sapphire template patterning

Evaluation of critical thickness of GaP0.98N0.02 layer on GaP substrate by synchrotron X-ray diffraction topography

Exciton spectra and electrical conductivity of epitaxial silicon-doped GaN layers

Fabrication of GaN structures with embedded network of voids using pillar patterned GaN templates

Impurity breakdown and terahertz luminescence in n-GaN epilayers under external electric field

In-situ annealing characterization of atomic-layer-deposited Al2O3 in N2, H2 and vacuum atmospheres

scientific article

InGaN-based 405 nm near-ultraviolet light emitting diodes on pillar patterned sapphire substrates

Infrared absorption of hydrogen-related defects in ammonothermal GaN

Large-area analysis of dislocations in ammonothermal GaN by synchrotron radiation X-ray topography

Low energy electron beam induced damage on InGaN/GaN quantum well structure

Low energy electron beam induced vacancy activation in GaN

MOCVD growth and characterization of near-surface InGaN/GaN single quantum wells for non-radiative coupling of optical excitations

MOVPE growth and characterization of InAlGaN films and InGaN/InAlGaN MQW structures

Metal Contacts on InN: Proposal for Schottky Contact

Migration kinetics of ion-implanted beryllium in ZnO and GaN

Morphology optimization of MOCVD-grown GaN nucleation layers by the multistep technique

Multistep method for threading dislocation density reduction in MOCVD grown GaN epilayers

N-polar AlN buffer growth by metal–organic vapor phase epitaxy for transistor applications

article

Optical and electrical properties of GaN: Si-based microstructures with a wide range of doping levels

Patterning of sapphire/GaN substrates

Reduced photoluminescence from InGaN/GaN multiple quantum well structures following 40Mev iodine ion irradiation

Reduction of threading dislocation density in Al0.12Ga0.88N epilayers by a multistep technique

Stress distribution of GaN layer grown on micro-pillar patterned GaN templates

Study of composition control and capping of MOVPE grown InGaN/InxAlyGa1-x-yN MQW structures

article

Substrate-patterning techniques for nitride growth

Surface-Tension-Driven Self-Alignment of Microchips on Black-Silicon-Based Hybrid Template in Ambient Air

Synchrotron radiation X-ray topography and X-ray diffraction of homoepitaxial GaN grown on ammonothermal GaN

article published in 2012

Synchrotron radiation x-ray topography and defect selective etching analysis of threading dislocations in GaN

Temperature Dependence Of Current-Voltage Characteristics Of Pt∕InN Schottky Barrier Diodes

Temperature dependence of droop onset in optically pumped intrinsic InGaAs/InP heterostructures

Terahertz emission from GaN epilayers at lateral electric field

Terahertz reflection and emission associated with nonequilibrium surface plasmon polaritons in n-GaN

article

The effect of InGaN/GaN MQW hydrogen treatment and threading dislocation optimization on GaN LED efficiency

Tunneling Explanation for the Temperature Dependence of Current–Voltage Characteristics of Pt/InN Schottky Barrier Diodes

Vertical excitation profile in diffusion injected multi-quantum well light emitting diode structure

Void shape control in GaN re-grown on hexagonally patterned mask-less GaN

article by M. Ali et al published January 2011 in Journal of Crystal Growth

X-ray diffraction study of GaN grown on patterned substrates