Annealing behavior of the EB-centers and M-center in low-energy electron irradiated n-type 4H-SiC

Barrier height determination for n-type 4H-SiC schottky contacts made using various metals

article by R. Yakimova et al published July 1998 in Journal of Electronic Materials

Capacitance transient studies of electron irradiated 4H-SiC

Capacitance transient study of a bistable deep level in e−-irradiated n-type 4H–SiC

Capture cross sections of electron irradiation induced defects in 6H–SiC

Chloride-Based SiC Epitaxial Growth toward Low Temperature Bulk Growth

Deep level defects in electron-irradiated 4H SiC epitaxial layers

Deep levels in as-grown and electron-irradiated n-type GaN studied by deep level transient spectroscopy and minority carrier transient spectroscopy

Deep levels in iron doped n- and p-type 4H-SiC

Deep levels in tungsten doped n-type 3C–SiC

Defects in low-energy electron-irradiated n-type 4H-SiC

Electronic Configuration of Tungsten in 4H-, 6H-, and 15R-SiC

Electronic properties of defects in high-fluence electron-irradiated bulk GaN

Evidence for two Mg related acceptors in GaN

scientific article published on 09 June 2009

Growth of GaN nanotubes by halide vapor phase epitaxy

scientific article published on 17 January 2011

Impurity concentration determination in 6H-SiC

Investigation of deep levels in bulk GaN material grown by halide vapor phase epitaxy

Magnetic characterization of conductance electrons in GaN

Optical identification and electronic configuration of tungsten in 4H- and 6H-SiC

Photoluminescence determination of the nitrogen doping concentration in 6H‐SiC

Photoluminescence of Mg-doped m-plane GaN grown by MOCVD on bulk GaN substrates

Properties of GaN layers grown on N-face free-standing GaN substrates

Radiation-induced defects in GaN

Radiation-induced defects in GaN bulk grown by halide vapor phase epitaxy

SiC – a semiconductor for high-power, high-temperature and high-frequency devices

Time-resolved photoluminescence properties of AlGaN/AlN/GaN high electron mobility transistor structures grown on 4H-SiC substrate

article

Time-resolved spectroscopy of excitons bound at shallow neutral donors in HVPE GaN

article by Bo Monemar et al published April 2006 in Physica B