A Morphological, Chemical and Electrical Study of HfSiON Films for Inter Poly Dielectric Applications in Flash Memories

A Novel Sb2Te3 Polymorph Stable at the Nanoscale

A Viable Route to Enhance Permittivity of Gate Dielectrics on In0.53Ga0.47As(001): Trimethylaluminum-Based Atomic Layer Deposition of MeO2(Me = Zr, Hf)

ALD-Grown Rare Earth Oxides for Advanced Gate Stacks

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Advanced protective coatings for reflectivity enhancement by low temperature atomic layer deposition of HfO2 on Al surfaces for micromirror applications

Amorphization dynamics of Ge 2 Sb 2 T3 5 films under nano- and femtosecond laser pulse irradiation

Amorphization dynamics of Ge2Sb2Te5 films upon nano- and femtosecond laser pulse irradiation

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An accurate low-frequency model for the 3ω method

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Application of the X-ray combined analysis to the study of lead titanate based ferroelectric thin films

Atomic Layer Deposition of Al-Doped ZrO

Atomic Layer Deposition of Al-Doped ZrO2Thin Films as Gate Dielectric for In0.53Ga0.47As

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Atomic Layer Deposition of Lu Silicate Films Using [(Me[sub 3]Si)[sub 2]N][sub 3]Lu

Atomic Layer Deposition of NiO Films on Si(100) Using Cyclopentadienyl-Type Compounds and Ozone as Precursors

Atomic Layer Deposition of hexagonal ErFeO3 thin films on SiO2/Si

Atomic layer deposition of rare-earth-based binary and ternary oxides for microelectronic applications

Atomic layer-deposited Al–HfO2/SiO2 bi-layers towards 3D charge trapping non-volatile memory

Atomic oxygen-assisted molecular beam deposition of Gd2O3 films for ultra-scaled Ge-based electronic devices

Atomic-layer deposition of Lu2O3

article published in 2004

Atomic-scale study of the amorphous-to-crystalline phase transition mechanism in GeTe thin films

scientific article published on 15 August 2017

Au-catalyzed self assembly of GeTe nanowires by MOCVD

Au-catalyzed synthesis and characterisation of phase change Ge-doped Sb–Te nanowires by MOCVD

CEMS characterisation of Fe/high-κ oxide interfaces

Chemical and Structural Properties of a TaN/HfO[sub 2] Gate Stack Processed Using Atomic Vapor Deposition

Chemical and structural properties of atomic layer deposited La2O3 films capped with a thin Al2O3 layer

Chemical vapor deposition of chalcogenide materials for phase-change memories

Chemical/Structural Nanocharacterization and Electrical Properties of ALD-Grown La[sub 2]O[sub 3]∕Si Interfaces for Advanced Gate Stacks

Chlorine mobility during annealing in N2 in ZrO2 and HfO2 films grown by atomic layer deposition

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Combining HRTEM–EELS nano-analysis with capacitance–voltage measurements to evaluate high-κ thin films deposited on Si and Ge as candidate for future gate dielectrics

Combining grazing incidence X-ray diffraction and X-ray reflectivity for the evaluation of the structural evolution of HfO2 thin films with annealing

article published in 2004

Conductive-filament switching analysis and self-accelerated thermal dissolution model for reset in NiO-based RRAM

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Cubic-to-monoclinic phase transition during the epitaxial growth of crystalline Gd2O3 films on Ge(001) substrates

article published in 2007

Dehydrogenation at the Fe/Lu2O3 interface upon rapid thermal annealing

Detection of the Tetragonal Phase in Atomic Layer Deposited La-Doped ZrO2 Thin Films on Germanium

scholarly article by Claudia Wiemer et al published 2011 in Journal of the Electrochemical Society

Detection of the Tetragonal and Monoclinic Phases and their Role on the Dielectric Constant of Atomic Layer Deposited La-Doped ZrO

Detrimental impact of technological processes on BTI reliability of advanced high-K/metal gate stacks

Dielectric properties of Er−doped HfO2 (Er∼15%) grown by atomic layer deposition for high-κ gate stacks

article published in 2010

Dynamics of laser-induced phase switching in GeTe films

Effect of a thin Ti interfacial layer on the thermal resistance of Ge2Sb2Te5-TiN stack

Effect of nitrogen doping on the thermal conductivity of GeTe thin films

article published in 2013

Effect of pulsed laser irradiation on the structure of GeTe films deposited by metal organic chemical vapor deposition: A Raman spectroscopy study

article

Effect on Al:MO2/In0.53Ga0.47As interface (M=Hf, Zr) of trimethyl-aluminum pre-treatment during atomic layer deposition

scholarly article by Alessio Lamperti et al published July 2014 in Thin Solid Films

Effects of annealing temperature and surface preparation on the formation of cobalt silicide interconnects

scholarly article by Claudia Wiemer et al published November 2003 in Microelectronic Engineering

Effects of growth temperature on the properties of atomic layer deposition grown ZrO2 films

Effects of the oxygen precursor on the electrical and structural properties of HfO2 films grown by atomic layer deposition on Ge

article published in 2005

Effects of thermal treatments on chemical composition and electrical properties of ultra-thin Lu oxide layers on Si

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Electrical Characterization of Rare Earth Oxides Grown by Atomic Layer Deposition

Electrical and structural characteristics of yttrium oxide films deposited by rf-magnetron sputtering on n-Si

scholarly article by E. K. Evangelou et al published July 2003 in Journal of Applied Physics

Electronic properties of crystalline Ge1-xSbxTey thin films

Epitaxial anatase HfO2 on high-mobility substrate for ultra-scaled CMOS devices

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Epitaxial growth of cubic Gd2O3 thin films on Ge substrates

Epitaxial phase of hafnium dioxide for ultrascaled electronics

scholarly article by Alberto Debernardi et al published 4 October 2007 in Physical Review B

Evolution of crystallographic ordering in Hf1−xAlxOy high-κ dielectric deposited by atomic layer deposition

Evolution of thermal conductivity of In3SbβTeγthin films up to 550 °C

Germanium diffusion during HfO2 growth on Ge by molecular beam epitaxy

scholarly article by S. Ferrari et al published 18 September 2006 in Applied Physics Letters

Growth study and characterization of In–Sb–Te compounds deposited onto different substrates by metal–organic chemical vapour deposition

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Growth study of GexSbyTez deposited by MOCVD under nitrogen for non-volatile memory applications

article published in 2008

Hardness, elastic modulus, and wear resistance of hafnium oxide-based films grown by atomic layer deposition

scholarly article by Maria Berdova et al published September 2016 in Journal of Vacuum Science & Technology A

High Temperature Thermal Conductivity of Amorphous Al2O3Thin Films Grown by Low Temperature ALD

High epitaxial quality Y2O3 high-κ dielectric on vicinal Si(001) surfaces

article published in 2002

High-Density Sb2 Te3 Nanopillars Arrays by Templated, Bottom-Up MOCVD Growth

scientific article published on 21 June 2019

High-k Materials in Flash Memories

Hot-Wire Chemical Vapor Deposition of Chalcogenide Materials for Phase Change Memory Applications

article by Adulfas Abrutis et al published June 2008 in Chemistry of Materials

Hot-wire chemical vapor growth and characterization of crystalline GeTe films

Identification of the temperature-dependent thermal boundary resistance at a metal-phase change material

Improved Performance of In$_{0.53}$Ga$_{0.47}$As-Based Metal–Oxide–Semiconductor Capacitors with Al:ZrO$_{2}$ Gate Dielectric Grown by Atomic Layer Deposition

Influence of lattice parameters on the dielectric constant of tetragonal ZrO2 and La-doped ZrO2 crystals in thin films deposited by atomic layer deposition on Ge(001)

Interface Study in a "Metal / High-k" Gate Stack: Tantalum Nitride on Hafnium Oxide

scholarly article published 2008

La2Hf2O7 high-κ gate dielectric grown directly on Si(001) by molecular-beam epitaxy

Low power phase change memory switching of ultra-thin In3Sb1Te2 nanowires

MOCVD growth and structural characterization of In-Sb-Te nanowires

MOCVD growth and thermal analysis of Sb 2 Te 3 thin films and nanowires

Mechanisms for Substrate-Enhanced Growth during the Early Stages of Atomic Layer Deposition of Alumina onto Silicon Nitride Surfaces

Metal organic chemical vapor deposition of phase change Ge1Sb2Te4 nanowires

scientific article published on 6 March 2012

Monitoring the formation of Sb nanocrystals in SiO2 by grazing incidence x-ray techniques

Mössbauer spectroscopy study of interfaces for spintronics

Nanoscale morphological and electrical homogeneity of HfO2 and ZrO2 thin films studied by conducting atomic-force microscopy

Nondestructive diagnostics of high-κ dielectrics for advanced electronic devices

O3-based atomic layer deposition of hexagonal La2O3 films on Si(100) and Ge(100) substrates

Ozone-Based Atomic Layer Deposition of Alumina from TMA: Growth, Morphology, and Reaction Mechanism

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Phase stabilization of Al:HfO2 grown on In(x)Ga(1-x)As substrates (x = 0, 0.15, 0.53) via trimethylaluminum-based atomic layer deposition

scientific article published on 21 February 2014

Preparation of SrRuO3 films for advanced CMOS metal gates

Process dependence of BTI reliability in advanced HK MG stacks

Protective coatings of hafnium dioxide by atomic layer deposition for microelectromechanical systems applications

scholarly article by Maria Berdova et al published April 2016 in Applied Surface Science

Rare earth-based high-k materials for non-volatile memory applications

Reproducibility in X-ray reflectometry: results from the first world-wide round-robin experiment

Resistance switching in amorphous and crystalline binary oxides grown by electron beam evaporation and atomic layer deposition

Review Article: Recommended reading list of early publications on atomic layer deposition—Outcome of the “Virtual Project on the History of ALD”

article published in 2017

Ru and RuO2 gate electrodes for advanced CMOS technology

Self-annealing and aging effect characterization on copper seed thin films

Si nanocrystal synthesis in HfO2/SiO/HfO2multilayer structures

scientific article published on 24 December 2009

Si surface passivation by Al2O3 thin films deposited using a low thermal budget atomic layer deposition process

Simulation of micro-mirrors for optical MEMS

Single-step Au-catalysed synthesis and microstructural characterization of core–shell Ge/In–Te nanowires by MOCVD

Solid-state dewetting of ultra-thin Au films on SiO2and HfO2

scientific article published on 20 November 2014

Structural and Chemical Investigation of Annealed Al2O3 Films for Interpoly Dielectric Application in Flash Memories

Structural and electrical analysis of In-Sb-Te-based PCM cells

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Structural and electrical characterization of ALCVD ZrO2 thin films on silicon

Structural and electrical properties of Er-doped HfO2 and of its interface with Ge (001)

Structural and electrical properties of atomic layer deposited Al-doped ZrO2 films and of the interface with TaN electrode

Structural characterization of epitaxial Y2O3 on Si (0 0 1) and of the Y2O3/Si interface

Study of the interfaces in resistive switching NiO thin films deposited by both ALD and e-beam coupled with different electrodes (Si, Ni, Pt, W, TiN)

Study on the effect of plasma treatment on TiN films in N2/H2 atmosphere using x-ray reflectivity and secondary ion mass spectroscopy

Synthesis of multiferroic Er-Fe-O thin films by atomic layer and chemical vapor deposition

article published in 2014

Temperature dependant thermal and mechanical properties of a metal-phase change layer interface using the time resolved pump probe technique

article published in 2011

Temperature dependence of transient and steady-state gate currents in HfO2 capacitors

Temperature-dependent thermal characterization of Ge2Sb2Te5and related interfaces by the photothermal radiometry technique

The interface between Gd2O3 films and Ge(001): A comparative study between molecular and atomic oxygen mediated growths

The international VAMAS project on X-ray reflectivity measurements for evaluation of thin films and multilayers — Preliminary results from the second round-robin

Thermal and Electrical Characterization of Materials for Phase-Change Memory Cells†

article by Roberto Fallica et al published 11 June 2009 in Journal of Chemical & Engineering Data

Thermal characterization of the SiO2-Ge2Sb2Te5 interface from room temperature up to 400°C

article published in 2010

Thermal properties of In–Sb–Te films and interfaces for phase change memory devices

Thermal resistance at Al-Ge2Sb2Te5 interface

article published in 2013

Thermally induced permittivity enhancement in La-doped ZrO2 grown by atomic layer deposition on Ge(100)

Trends of structural and electrical properties in atomic layer deposited HfO2 films

Trimethylaluminum-based Atomic Layer Deposition of MO2 (M=Zr, Hf): Gate Dielectrics on In0.53Ga0.47As(001) Substrates

Ultraviolet optical near-fields of microspheres imprinted in phase change films

article published in 2010

Understanding of the thermal stability of the hafnium oxide/TiN stack via 2 “high k” and 2 metal deposition techniques

scholarly article by V. Cosnier et al published September 2007 in Microelectronic Engineering

Weak Antilocalization in Granular Sb2 Te3 Thin Films Deposited by MOCVD

X-ray absorption spectroscopy study of Yb2O3 and Lu2O3 thin films deposited on Si(100) by atomic layer deposition

article published in 2006

XPS composition study of stacked Si oxide/Si nitride/Si oxide nano-layers

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[(Me3Si)2N]3Lu: Molecular Structure and Use as Lu and Si Source for Atomic Layer Deposition of Lu Silicate Films