(Invited) SiC MOS Interface States: Difference between Si Face and C Face

(Invited) SiC MOS Interface States: Similarity and Dissimilarity from Silicon

(Nitrogen-Vacancy)-Complex Formation in SiC: Experiment and Theory

380keV proton irradiation effects on photoluminescence of Eu-doped GaN

3MeV electron irradiation-induced defects in CuInSe2 thin films

4H-SiC Pseudo-CMOS Logic Inverters for Harsh Environment Electronics

60 Co Gamma–Ray Irradiation Effects on Pentacene-Based Organic Thin-Film Transistors

article

A comparative study of the radiation hardness of silicon carbide using light ions

scholarly article by K.K Lee et al published September 2003 in Nuclear Instruments & Methods in Physics Research B

A silicon carbide room-temperature single-photon source.

scientific article published on 17 November 2013

A study on the artifact external quantum efficiency of Ge bottom subcells in triple-junction solar cells

Activation and control of visible single defects in 4H-, 6H-, and 3C-SiC by oxidation

Activity and current status of R&D on space solar cells in Japan

An ultra-thin diamond membrane as a transmission particle detector and vacuum window for external microbeams

article

Analysis for Radiation-Resistance of InGaP and GaAs Sub-Cells for InGaP/GaAs/Ge 3-Junction Solar Cells

Analysis of Anomalous Degradation of Cu(In,Ga)Se2Thin-Film Solar Cells Irradiated with Protons

Analysis of Proton Induced Defects in Cu(In,Ga)Se2 Thin-Film Solar Cells

Analysis of Radiation Response and Recovery Characteristics of Amorphous Silicon Solar Cells

Analysis on degradation characteristics of component subcells in IMM triple-junction solar cells

Anharmonic vibrations of the dicarbon antisite defect in 4H-SiC

Annealing behavior of the EB-centers and M-center in low-energy electron irradiated n-type 4H-SiC

Annealing of Electron Irradiated, Thick, Ultrapure 4H SiC between 1100°C and 1500°C and Measurements of Lifetime and Photoluminescence

Annealing of a Vacancy-Type Defect and Diffusion of Implanted Boron in 6H-SiC

Anomalous Increase in Effective Channel Mobility on Gamma-Irradiated p-Channel SiC Metal–Oxide–Semiconductor Field-Effect Transistors Containing Step Bunching

article

Anomalous enhancement in radiation induced conductivity of hydrogenated amorphous silicon semiconductors

Anomalous photoconductivity variations of solar cell quality a-Si:H thin films induced by proton irradiation

Array of bright silicon-vacancy centers in diamond fabricated by low-energy focused ion beam implantation

article published in 2014

Atom-Photon Coupling from Nitrogen-vacancy Centers Embedded in Tellurite Microspheres

Atom-Photon Coupling from Nitrogen-vacancy Centres Embedded in Tellurite Microspheres

scientific article published on 22 June 2015

Behavior of nitrogen atoms in SiC-SiO2 interfaces studied by electrically detected magnetic resonance

Bistable defects in low-energy electron irradiated n-type 4H-SiC

article published in 2010

Breakdown voltage in silicon carbide metal-oxide-semiconductor devices induced by ion beams

scholarly article published 2013

Bright and photostable nitrogen-vacancy fluorescence from unprocessed detonation nanodiamond

scientific article

Bright single photon sources in lateral silicon carbide light emitting diodes

scholarly article by Matthias Widmann et al published 4 June 2018 in Applied Physics Letters

Broadband excitation by chirped pulses: application to single electron spins in diamond

C-Face Interface Defects in 4H-SiC MOSFETs Studied by Electrically Detected Magnetic Resonance

Capacitance transient study of a bistable deep level in e−-irradiated n-type 4H–SiC

Carrier removal in lattice-mismatched InGaP solar cells under 1-MeV-electron irradiation

Change in Characteristics of SiC MOSFETs by Gamma-Ray Irradiation at High Temperature

Change in Ion Beam Induced Current from Si Metal-Oxide-Semiconductor Capacitors after Gamma-Ray Irradiation

Change in I–V characteristics of subcells in a multi-junction solar cell due to radiation irradiation

Change in the electrical performance of GaAs solar cells with InGaAs quantum dot layers by electron irradiation

Change in the electrical performance of InGaAs quantum dot solar cells due to irradiation

Characteristics of Gamma–Ray Irradiated Pentacene Organic Thin Film Field Effect Transistors

article

Characterization of 4H-SiC nMOSFETs in Harsh Environments, High-Temperature and High Gamma-Ray Radiation

Characterization of LiNbO3Single-Crystal Substrates Irradiated with Electrons

Characterization of Light Element Impurities in Ultrathin Silicon-on-Insulator Layers by Luminescence Activation Using Electron Irradiation

Characterization of Mn-doped 3C-SiC prepared by ion implantation

Characterization of charge generated in silicon carbide n+p diodes using transient ion beam-induced current

scholarly article by Takeshi Ohshima et al published April 2005 in Nuclear Instruments and Methods in Physics Research

Characterization of stability of benchmark organic photovoltaic films after proton and electron bombardments

Characterization of the Excess Carrier Lifetime of As-Grown and Electron Irradiated Epitaxial p-Type 4H-SiC Layers by the Microwave Photoconductivity Decay Method

Charge Collection Characteristics of A Super-Thin Diamond Membrane Detector Measured With High-Energy Heavy Ions

Charge Collection Efficiency of 6H-SiC P + N Diodes Degraded by Low-Energy Electron Irradiation

Charge Collection Properties of 6H-SiC Diodes by Wide Variety of Charged Particles up to Several Hundreds MeV

Charge Enhancement Effects in 6H-SiC MOSFETs Induced by Heavy Ion Strike

Charge generated in 6H–SiC n+p diodes by MeV range heavy ions

article published in 2011

Charge multiplication effect in thin diamond films

Charge transfer and superconductivity in Nd(Ba1−xNdx)2Cu3O7+x prepared in high pressure oxygen

scholarly article by K. Takita et al published February 1992 in Physica C

Charged particle radiation effects on flexible a-Si/a-SiGe/a-SiGe triple junction solar cells for space use

Coherent control of single spins in silicon carbide at room temperature

scientific article (publication date: December 2014)

Coherent electrical readout of defect spins in silicon carbide by photo-ionization at ambient conditions

scientific article published on 05 December 2019

Color Centers Enabled by Direct Femto-Second Laser Writing in Wide Bandgap Semiconductors

scientific article published on 31 December 2020

Common point defects in as-grown ZnO substrates studied by optical detection of magnetic resonance

Comparative study of transient current induced in SiC p+n and n+p diodes by heavy ion micro beams

Comparative study on degradation characteristics of component subcells in IMM triple-junction solar cells irradiated with high-energy electrons and protons

Comparison of the Electrical Channel Properties between Dry- and Wet- Oxidized 6H-SiC MOSFETs Investigated by Hall Effect

Compensation-Dependent Carrier Transport of Al-Doped p -Type 4H-SiC

Continuous observation of polarization effects in thin SC-CVD diamond detector designed for heavy ion microbeam measurement

Continuous-wave and pulsed EPR study of the negatively charged silicon vacancy withS=32andC3vsymmetry inn-type4H−SiC

scholarly article in Physical Review B, vol. 66 no. 23, December 2002

Creation and Functionalization of Defects in SiC by Proton Beam Writing

Creation of silicon vacancy in silicon carbide by proton beam writing toward quantum sensing applications

scholarly article by Takeshi Ohshima et al published 19 July 2018 in Journal of Physics D

Current Injection Effects on the Electrical Performance of 3J Solar Cells Irradiated with Low and High Energy Protons

Current Transient Effect in N-Channel 6H-SiC MOSFET Induced by Heavy Ion Irradiation

Deactivation of nitrogen donors in silicon carbide

scholarly article by F. Schmid et al published 18 December 2006 in Physical Review B

Decrease of Charge Collection Due to Displacement Damage by Gamma Rays in a 6H-SiC Diode

Deep Defects in 3C-SiC Generated by H + - and He + -Implantation or by Irradiation with High-Energy Electrons

Deep Levels in P-Type 4H-SiC Induced by Low-Energy Electron Irradiation

Deep levels in as-grown and electron-irradiated n-type GaN studied by deep level transient spectroscopy and minority carrier transient spectroscopy

Deep levels in low-energy electron-irradiated 4H-SiC

Deep-level defects introduced by 1 MeV electron radiation in AlInGaP for multijunction space solar cells

Deep-level transient spectroscopy analysis of proton-irradiated n+/p InGaP solar cells

Defect Levels in High Purity Semi-Insulating 4H-SiC Studied by Alpha Particle Induced Charge Transient Spectroscopy

Defect levels in low-doped 4H-SiC Schottky barrier diodes detected by using alpha particles

Defect-engineering in SiC by ion implantation and electron irradiation

Defect-induced performance degradation of 4H-SiC Schottky barrier diode particle detectors

Defects Introduced by Electron-Irradiation at Low Temperatures in SiC

Defects at nitrogen site in electron-irradiated AlN

Defects in GaAs solar cells with InAs quantum dots created by proton irradiation

Defects in an Electron-Irradiated 6H-SiC Diode Studied by Alpha Particle Induced Charge Transient Spectroscopy: Their Impact on the Degraded Charge Collection Efficiency

Defects in low-energy electron-irradiated n-type 4H-SiC

Degradation Behavior of Flexible a-Si/a-SiGe/a-SiGe Triple-Junction Solar Cells Irradiated With Protons

Degradation behavior of flexible a-Si/a-SiGe/a-SiGe triple junction solar cells irradiated with 20-350 keV protons

Degradation mechanisms of cable insulation materials during radiation–thermal ageing in radiation environment

Degradation modeling of InGaP/GaAs/Ge triple-junction solar cells irradiated with various-energy protons

Degradation of Charge Collection Efficiency for 6H-SiC Diodes by Electron Irradiation

Detection of atomic spin labels in a lipid bilayer using a single-spin nanodiamond probe

scientific article published on 17 June 2013

Development of Space Solar Sheet with inverted triple-junction cells

Development of diagnostic method for deep levels in semiconductors using charge induced by heavy ion microbeams

Development of irradiation methods and degradation modeling for state-of-the-art space solar cells

article

Dicarbon antisite defect inn-type4H-SiC

scholarly article in Physical Review B, vol. 79 no. 11, March 2009

Difference of soft error rates in SOI SRAM induced by various high energy ion species

Direct evaluation of influence of electron damage on the subcell performance in triple-junction solar cells using photoluminescence decays

scientific article

Divacancy in 4H-SiC

scientific article published in Physical Review Letters

Dopant effects on solid phase epitaxy in silicon and germanium

scholarly article by B. C. Johnson et al published February 2012 in Journal of Applied Physics

Double negatively charged carbon vacancy at the h- and k-sites in 4H-SiC: Combined Laplace-DLTS and DFT study

E1/E2 traps in 6H-SiC studied with Laplace deep level transient spectroscopy

EPR Identification of Defects and Impurities in SiC: To be Decisive

EPR Identification of Intrinsic Defects in SiC

EPR and ENDOR Studies of Shallow Donors in SiC

article by Nguyen Tien Son et al published 26 May 2010 in Applied Magnetic Resonance

EPR and Pulsed ENDOR Study of El6 and Related Defects in 4H-SiC

EPR and theoretical studies of negatively charged carbon vacancy in4H−SiC

scholarly article in Physical Review B, vol. 71 no. 19, May 2005

EPR and theoretical studies of positively charged carbon vacancy in 4H-SiC

EPR andab initiocalculation study on the EI4 center in4H- and6H-SiC

scholarly article in Physical Review B, vol. 82 no. 23, December 2010

EPR identification of intrinsic defects in SiC

EPR studies of the isolated negatively charged silicon vacancies inn-type4H- and6H-SiC: Identification ofC3vsymmetry and silicon sites

scholarly article in Physical Review B, vol. 68 no. 16, October 2003

ESR characterization of activation of implanted phosphorus ions in silicon carbide

scholarly article by J. Isoya et al published May 2003 in Nuclear Instruments & Methods in Physics Research B

ESR studies of high-energy phosphorus-ion implanted synthetic diamond crystals

Effect of 3 MeV electron irradiation on the photoluminescence properties of Eu-doped GaN

Effect of Al Composition on Luminescence Properties of Rare-Earth Implanted into AlGaN

article

Effect of Alloy Composition on Photoluminescence Properties of Europium Implanted AlGaInN

article

Effect of Base Doping Concentration on Radiation-Resistance for GaAs Sub-Cells in InGaP/GaAs/Ge

Effect of Proton Irradiation on 2DEG in AlGaN/GaN Heterostructures

Effect of a body-tie structure fabricated by partial trench isolation on the suppression of floating body effect induced soft errors in SOI SRAM investigated using nuclear probes

Effect of annealing under high oxygen pressure on the structure and superconductivity of (Ba0.85Nd0.15)2NdCu3O6+z

scholarly article by T. Mochiku et al published May 1990 in Physica C

Effect of gamma-ray irradiation on the characteristics of 6H silicon carbide metal-oxide-semiconductor field effect transistor with hydrogen-annealed gate oxide

article

Effect of gamma-ray irradiation on the device process-induced defects in 4H-SiC epilayers

Effect of irradiation on gallium arsenide solar cells with multi quantum well structures

Effect of proton irradiation on AlGaN/GaN micro-Hall sensors

Effect of the Schottky barrier height on the detection of midgap levels in 4H-SiC by deep level transient spectroscopy

article by S. A. Reshanov et al published December 2007 in Journal of Applied Physics

Effects of Al composition on luminescence properties of europium implanted AlxGa1−xN (0≤x≤ 1)

article

Effects of Electron Irradiation on CuInS2Crystals

Effects of Fabrication Process on the Electrical Characteristics of n-Channel MOSFETs Irradiated with Gamma-Rays

Effects of High-Energy Electron Irradiation on Quantum Emitters in Hexagonal Boron Nitride

scientific article published on 19 June 2018

Effects of Proton Irradiation on the Magnetoelectric Properties of 2DEG AlGaN/GaN Micro-Hall Sensors

Effects of Steam Annealing on Electrical Characteristics of 3C-SiC Metal-Oxide-Semiconductor Structures

article published in 2000

Effects of Successive Annealing of Oxides on Electrical Characteristics of Silicon Carbide Metal-Oxide-Semiconductor Structures

scholarly article published April 2002

Effects of a low-energy proton irradiation on n+/p-AlInGaP solar cells

Effects of high-energy proton irradiation on the density and Hall mobility of majority carriers in single crystalline n-type CuInSe2 thin films

article

Effects of implantation conditions on the luminescence properties of Eu-doped GaN

Effects of irradiation beam conditions on radiation degradation of solar cells

article published in 2010

Effects of proton irradiation on n+p InGaP solar cells

Effects of radiation-induced defects on the charge collection efficiency of a silicon carbide particle detector

scholarly article published 29 May 2013

Effects of the Surface Condition of the Substrates on the Electrical Characteristics of 4H-SiC MOSFETs

Effects of ultra-intense laser driven proton beam on the hydriding property of palladium

Efficiently Engineered Room Temperature Single Photons in Silicon Carbide ⬇️

scientific article published on 18 October 2012

Electric properties of undoped hydrogenated amorphous silicon semiconductors irradiated with self-ions

Electrical Charge State Manipulation of Single Silicon Vacancies in a Silicon Carbide Quantum Optoelectronic Device

scientific article published on 25 September 2019

Electrical and optical control of single spins integrated in scalable semiconductor devices

scientific article published on 01 December 2019

Electrical performance degradation of GaAs solar cells with InGaAs quantum dot layers due to proton irradiation

Electrically driven optical interferometry with spins in silicon carbide

scientific article published on 22 November 2019

Electron Paramagnetic Resonance Study of Carbon Antisite-Vacancy Pair in p-Type 4H-SiC

Electron Paramagnetic Resonance Study of Carbon Antisite-Vacancy Pair in p-Type 4H-SiC

Electron and proton irradiation effects on substrate-type amorphous silicon solar cells

Electron beam irradiation effect on the mechanical properties of nanosilica-filled polyurethane films

Electron paramagnetic resonance study on n-type electron-irradiated 3C-SiC

Electron spin resonance detected by a superconducting qubit

scholarly article by Y. Kubo et al published 10 August 2012 in Physical Review B

Electronic Properties of Femtosecond Laser Induced Modified Spots on Single Crystal Silicon Carbide

scholarly article published April 2010

Electronic Transport Transition of Hydrogenated Amorphous Silicon Irradiated With Self Ions

Electronic properties of defects in high-fluence electron-irradiated bulk GaN

Energetically deep defect centers in vapor-phase grown zinc oxide

Energy loss process analysis for radiation degradation and immediate recovery of amorphous silicon alloy solar cells

Engineering Single Defects in Silicon Carbide Bulk, Nanostructures and Devices

scholarly article published May 2016

Engineering the Interface: Nanodiamond Coating on 3D-Printed Titanium Promotes Mammalian Cell Growth and Inhibits Staphylococcus aureus Colonization

scientific article published on 28 June 2019

Enhanced Charge Collection by Single Ion Strike in AlGaN/GaN HEMTs

Enhanced annealing of the Z1∕2 defect in 4H–SiC epilayers

Enhancement effect of Tb-related luminescence in AlxGa1-xN with the AlN molar fraction 0 ≤ x≤ 1

Enhancement of local electrical conductivities in SiC by femtosecond laser modification

Entanglement and control of single nuclear spins in isotopically engineered silicon carbide

scientific article published on 21 September 2020

Epitaxial Layer Thickness Dependence on Heavy Ion Induced Charge Collection in 4H-SiC Schottky Barrier Diodes

Equilibrium charge state of NV centers in diamond

scientific article published in 2021

Estimation of subcell photocurrent in IMM3J using LED bias light

article

Evaluation of Unintentionally Doped Impurities in Silicon Carbide Substrates Using Neutron Activation Analysis

scholarly article by Takeshi Ohshima et al published 15 September 2007 in Materials Science Forum

Evaluation of Unintentionally Doped Impurities in Silicon Carbide Substrates Using Neutron Activation Analysis

scholarly article published September 2007

Evaluation of radiation tolerance of perovskite solar cell for use in space

Evaluation of soft error rates using nuclear probes in bulk and SOI SRAMs with a technology node of 90nm

Evaluation of the characteristics of silicon carbide diodes using transient-IBIC technique

scholarly article by Takeshi Ohshima et al published September 2003 in Nuclear Instruments & Methods in Physics Research B

Evaluation of the electrical characteristics of III-V compounds solar cells irradiated with protons at low temperature

Excess Carrier Lifetime in p-Type 4H-SiC Epilayers with and without Low-Energy Electron Irradiation

Experimental Implementation of Assisted Quantum Adiabatic Passage in a Single Spin

scientific article published in Physical Review Letters

Experimental Verification of Scan-Architecture-Based Evaluation Technique of SET and SEU Soft-Error Rates at Each Flip-Flop in Logic VLSI Systems

Extending coherence time of macro-scale diamond magnetometer by dynamical decoupling with coplanar waveguide resonator

scientific article published on 01 December 2018

Extending spin coherence times of diamond qubits by high-temperature annealing

scholarly article in Physical Review B, vol. 88 no. 7, August 2013

Fabrication of single photon centres in silicon carbide

scholarly article published December 2012

Femtosecond laser modification aiming at the enhancement of local electric conductivities in SiC

First flight demonstration of film-laminated InGaP/GaAs and CIGS thin-film solar cells by JAXA's small satellite in LEO

First flight demonstration of glass-type space solar sheet

Fluorescence Polarization Switching from a Single Silicon Vacancy Colour Centre in Diamond

scientific article

Fluorescent color centers in laser ablated 4H-SiC nanoparticles

scientific article

Fluorine-vacancy defects in fluorine-implanted silicon studied by electron paramagnetic resonance

Formation of oxide-trapped charges in 6HSiC MOS structures

GAS EVOLUTION FROM INSULATING MATERIALS FOR SUPERCONDUCTING COIL OF ITER BY GAMMA RAY IRRADIATION AT LIQUID NITROGEN TEMPERATURE

scholarly article by A. Idesaki et al published 2008 in AIP Conference Proceedings

Gamma-Ray Irradiation Effects on the Electrical Characteristics of 6H-SiC MOSFETs with Annealed Gate-Oxide

Gamma-Ray Irradiation Response of the Motor-Driver Circuit with SiC MOSFETs

Hall Effect and Admittance Measurements of n-Channel 6H-SiC MOSFETs

Hall Effect and Admittance Measurements of n-Channel 6H-SiC MOSFETs

Heavy-Ion Induced Anomalous Charge Collection From 4H-SiC Schottky Barrier Diodes

High Gamma Ray Tolerance for 4H-SiC Bipolar Circuits

High Proton Radiation Tolerance of InAsSb Quantum-Well-Based micro-Hall Sensors

High efficiency and radiation resistant InGaP/GaAs//CIGS stacked solar cells for space applications

High temperature annealing effects on deep-level defects in a high purity semi-insulating 4H-SiC substrate

High-fidelity spin and optical control of single silicon-vacancy centres in silicon carbide

scientific article published on 26 April 2019

High-radiation-resistant InGaP, InGaAsP, and InGaAs solar cells for multijuction solar cells

Hole generation and pair breaking as investigated in Pr1−xCaxBa2Cu3Oy

Homoepitaxial diamond film growth: High purity, high crystalline quality, isotopic enrichment, and single color center formation

Homoepitaxial diamond film growth: High purity, high crystalline quality, isotopic enrichment, and single color center formation (Phys. Status Solidi A 11∕2015)

Hybrid quantum circuit with a superconducting qubit coupled to a spin ensemble.

scientific article published on 21 November 2011

Hydrogen at zinc vacancy of ZnO: An EPR and ESEEM study

Identification of Structures of the Deep Levels in 4H-SiC

Identification of a Frenkel-pair defect in electron-irradiated 3CSiC

scholarly article in Physical Review B, vol. 80 no. 12, September 2009

Identification of divacancies in 4H-SiC

Identification of positively charged carbon antisite-vacancy pairs in4H−SiC

scholarly article in Physical Review B, vol. 75 no. 24, June 2007

Identification of the Carbon Antisite-Vacancy Pair in4H-SiC

scientific article published in Physical Review Letters

Identification of the Negative Di-Carbon Antisite Defect in n-Type 4H-SiC

Identification of the gallium vacancy–oxygen pair defect in GaN

scholarly article in Physical Review B, vol. 80 no. 15, October 2009

Impact of Auger Recombination on Charge Collection of a 6H-SiC Diode by Heavy Ions

Impact of Carrier Lifetime on Efficiency of Photolytic Hydrogen Generation by p-Type SiC

Impacts of gate bias and its variation on gamma-ray irradiation resistance of SiC MOSFETs

article

Improvement of luminescence capability of Tb3+-related emission by AlxGa1−xN

Improvement of radiation response of SiC MOSFETs under high temperature and humidity conditions

In Situ Irradiation and Measurement of Triple Junction Solar Cells at Low Intensity, Low Temperature (LILT) Conditions

In vivo imaging and tracking of individual nanodiamonds in drosophila melanogaster embryos.

scientific article published on 20 March 2014

InGaP/GaAs heterojunction photosensor powered by an on-chip GaAs solar cell for energy harvesting

Influence of Heavy Ion Irradiation on Perpendicular-Anisotropy CoFeB-MgO Magnetic Tunnel Junctions

Influence of heavy ion irradiation on perpendicular-anisotropy CoFeB-MgO magnetic tunnel junctions

Innovative technologies on proton irradiation ground tests for space solar cells

Instability of Critical Electric Field in Gate Oxide Film of Heavy Ion Irradiated SiC MOSFETs

Investigation of Tb-related green emission in group-III nitrides by time-resolved photoluminescence measurement

Investigation of electrically-active deep levels in single-crystalline diamond by particle-induced charge transient spectroscopy

article published in 2016

Investigation of the radiation hardness on semiconductor devices using the ion micro-beam

Investigation of the silicon vacancy color center for quantum key distribution

scientific article published on 01 December 2015

Ion beam induced charge gate rupture of oxide on 6H–SiC

article published in 2001

Ion irradiation effects on electric properties of hydrogenated amorphous silicon thin films

Ion-Induced Anomalous Charge Collection Mechanisms in SiC Schottky Barrier Diodes

Ion-induced changes in semiconductor properties of hydrogenated amorphous silicon

Irradiation and measurement of solar cells at low intensity, low temperature (LILT) conditions

Isolated Spin Qubits in SiC with a High-Fidelity Infrared Spin-to-Photon Interface

Isolated electron spins in silicon carbide with millisecond coherence times

scientific article

Isotopic identification of engineered nitrogen-vacancy spin qubits in ultrapure diamond ⬇️

scholarly article in Physical Review B, vol. 90 no. 8, August 2014

LET Dependence of Single Event Transient Pulse-Widths in SOI Logic Cell

Laplace DLTS study of deep defects created in neutron-irradiated n-type 4H-SiC

Ligand hyperfine interactions at silicon vacancies in 4H-SiC

scientific article published on 14 February 2019

Light emitting FET based-on spatially selective doping of Eu in AlGaN/GaN HEMT

Linear energy transfer dependence of single event gate rupture in SiC MOS capacitors

Local Thermal Expansion and the C-C Stretch Vibration of the Dicarbon Antisite in 4H SiC

article

Locking of electron spin coherence above 20 ms in natural silicon carbide ⬇️

scholarly article by D. Simin et al published 7 April 2017 in Physical Review B

Loop-gap microwave resonator for hybrid quantum systems

Low-Energy Proton Irradiation Effects on GaAs/Si Solar Cell

Low-Loss Tellurite Fibers With Embedded Nanodiamonds

Magnetic field-induced enhancement of the nitrogen-vacancy fluorescence quantum yield

scientific article published on 01 July 2017

Magnetic resonance identification of hydrogen at a zinc vacancy in ZnO

scientific article published on 25 July 2013

Magnetic resonance studies of defects in electron-irradiated ZnO substrates

Magnetically sensitive nanodiamond-doped tellurite glass fibers

scientific article published on 19 January 2018

Magnetometer with nitrogen-vacancy center in a bulk diamond for detecting magnetic nanoparticles in biomedical applications

scientific article published on 12 February 2020

Majority- and minority-carrier deep level traps in proton-irradiated n+/p-InGaP space solar cells

Mechanism of improved crystallinity by defect-modification in proton-irradiated GaAsPN photovoltaics: Experimental and first-principle calculations approach

scientific article published in 2022

Mechanisms of Decrease in Hole Concentration in Al-Doped 4H-SiC by Irradiation of 200 keV Electrons

Mechanisms of changes of hole concentration in Al-doped 6H-SiC by electron irradiation and annealing

scientific article

Mechanisms of reduction in hole concentration in Al-doped 4H-SiC by electron irradiation

Mechanisms of unexpected reduction in hole concentration in Al-doped 4H-SiC by 200 keV electron irradiation

Metastable Defects in Low-Energy Electron Irradiated n -Type 4H-SiC

Minority-Carrier Injection-Enhanced Recovery of Radiation-Induced Defects in n+p AlInGaP Solar Cells

Modeling of degradation behavior of InGaP/GaAs/Ge triple-junction space solar cell exposed to charged particles

Modelling of Radiation Response of p-Channel SiC MOSFETs

Monodisperse Five-Nanometer-Sized Detonation Nanodiamonds Enriched in Nitrogen-Vacancy Centers

scientific article published on 29 May 2019

Multimode Storage and Retrieval of Microwave Fields in a Spin Ensemble

N-channel MOSFETs fabricated on homoepitaxy-grown 3C-SiC films

NV−–N+ pair centre in 1b diamond

scientific article published on 26 November 2018

Nanodiamond in tellurite glass Part II: practical nanodiamond-doped fibers

Nanodiamond-polycaprolactone composite: A new material for tissue engineering with sub-dermal imaging capabilities

scholarly article by Kate Fox et al published December 2016 in Materials Letters

Nanomechanical Sensing Using Spins in Diamond

scientific article published in February 2017

Negative-U-Centers in 4H- and 6H-SiC Detected by Spectral Light Excitation

Negative-USystem of Carbon Vacancy in4H-SiC

scientific article published in Physical Review Letters

New Lines and Issues Associated with Deep Defect Spectra in Electron, Proton and 4 He Ion Irradiated 4H SiC

New application of NV centers in CVD diamonds as a fluorescent nuclear track detector

Niel analysis of radiation degradation parameters derived from quantum efficiency of triple-junction space solar cell

Observation of Bistable Defects in Electron Irradiated N-Type 4H-SiC

Observation of deep levels and their hole capture behavior in p-type 4H-SiC epilayers with and without electron irradiation

Observation of single-ion induced charge collection in diode by a heavy ion microbeam system

Observation of transient current induced in silicon carbide diodes by ion irradiation

scholarly article by Takeshi Ohshima et al published May 2003 in Nuclear Instruments & Methods in Physics Research B

Opportunity of single atom control for quantum processing in silicon and diamond

Optimum structures for gamma-ray radiation resistant SiC-MOSFETs

Oxygen Ion Induced Charge in SiC MOS Capacitors Irradiated with Gamma-Rays

Oxygen-incorporated single-photon sources observed at the surface of silicon carbide crystals

scholarly article published 14 November 2018

Partial recovery of the magnetoelectrical properties of AlGaN/GaN-based micro-Hall sensors irradiated with protons

Peak Degradation of Heavy-Ion Induced Transient Currents in 6H-SiC MOS Capacitors

Performance of gamma irradiated P-channel 6H SiC MOSFETs: high total dose

Phase transformation of Mg–Fe alloys

Photo- and dark conductivity variations of solar cell quality a-Si:H thin films irradiated with protons

Photo-EPR Studies on Low-Energy Electron-Irradiated 4H-SiC

Photo-EPR Study of Vacancy-Type Defects in Irradiated n-Type 4H-SiC

Photoelectromagnetic effects on electron and proton irradiated CuInSe2 thin films

Photoluminescence evaluation of light element impurities in ultrathin SOI wafers by luminescence activation using electron irradiation

Piezoelectric photothermal investigation of proton irradiation induced defects in CuInSe2 epitaxial films

Positron annihilation study of vacancy-type defects in silicon carbide co-implanted with aluminum and carbon ions

scholarly article by Takeshi Ohshima et al published December 2001 in Physica B

Post-Implantation Annealing Effects on the Surface Morphology and Electrical Characteristics of 6H-SiC Implanted with Aluminum

scholarly article published April 2002

Proton Irradiation Enhancement of Low-Field Negative Magnetoresistance Sensitivity of AlGaN/GaN-Based Magnetic Sensor at Cryogenic Temperature

article published in 2014

Proton irradiation damages in CuInSe2 thin film solar cell materials by a piezoelectric photothermal spectroscopy

Proton radiation analysis of multi-junction space solar cells

Proton-beam-induced defect levels in CuInSe2 thin-film absorbers: An investigation on nonradiative electron transitions

Proton-induced photoconductivity increment and the thermal stability of a-Si:H thin film

PseudoMorphic Glass to enable high efficiency space photovoltaic devices

Publisher's Note: “Loop-gap microwave resonator for hybrid quantum systems” [Appl. Phys. Lett. 112, 204102 (2018)]

Publisher’s Note: Divacancy in 4H-SiC [Phys. Rev. Lett.96, 055501 (2006)]

scientific article published in Physical Review Letters

Pulsed EPR Studies of the T v2a Center in 4H-SiC

Pulsed EPR studies of shallow donor impurities in SiC

article by J. Isoya et al published December 2003 in Physica B

Purcell Enhancement of a Single Silicon Carbide Color Center with Coherent Spin Control

scientific article published on 31 March 2020

Qualification Test Results of IMM Triple-Junction Solar Cells, Space Solar Sheets, and Lightweight&Compact Solar Paddle

Quantum error correction in a solid-state hybrid spin register

scientific article published in February 2014

Quantum-Well Solar Cells for Space: The Impact of Carrier Removal on End-of-Life Device Performance

Quenching of impact ionization in heavy ion induced tracks in wide bandwidth Si Avalanche Photodiodes

Radiation Effects on Semiconductors and Polymers for Space Applications

Radiation Hardness Evaluation of SiC-BGSIT

Radiation Resistance of Wide Band Gapn+/pAlInGaP Solar Cell for High-Efficient Multijunction Space Solar Cells

Radiation Response of Negative Gate Biased SiC MOSFETs

scientific article published on 27 August 2019

Radiation Response of Silicon Carbide Diodes and Transistors

article

Radiation Response of p-Channel 6H-SiC MOSFETs Fabricated Using Pyrogenic Conditions

Radiation damage on 6H-SiC Schottky diodes

Radiation degradation and damage coefficients of InGaP/GaAs/Ge triple-junction solar cell by low-energy electrons

Radiation degradation characteristics of component subcells in inverted metamorphic triple-junction solar cells irradiated with electrons and protons

Radiation effect on pn-SiC diode as a detector

Radiation effects in solar cells

Radiation hardness assessment of high voltage 4H-SiC BJTs

Radiation hardness of n-type SiC Schottky barrier diodes irradiated with MeV He ion microbeam

Radiation hardness of β-Ga2O3 metal-oxide-semiconductor field-effect transistors against gamma-ray irradiation

article

Radiation resistance of InGaP/GaAs dual-junction thin-film space solar cell

Radiation resistance of super-straight type amorphous silicon germanium alloy solar cells

scholarly article published June 2014

Radiation response of multi-quantum well solar cells: Electron-beam-induced current analysis

Radiation response of silicon carbide metal–oxide–semiconductor transistors in high dose region

article

Radiation response of the electrical characteristics of GaAs solar cells with quantum dot layers

Radiation response of the fill-factor for GaAs solar cells with InGaAs quantum dot layers

Radiation study in quantum well III-V multi-junction solar cells

Radiation-Induced Currents in 4H-SiC Dosimeters for Real-Time Gamma-Ray Dose Rate Monitoring

Radiation-induced defects in GaN

Radiation-induced defects in GaN bulk grown by halide vapor phase epitaxy

Radiation-resistance analysis of GaAs and InGaP sub cells for InGaP/GaAs/Ge 3-junction space solar cells

Recombination centers in as-grown and electron-irradiated ZnO substrates

Recovery of Short Circuit Current of 3J Solar Cells by Current Injection at Low Temperature

Recovery of the Electrical Characteristics of SiC MOSFETs Irradiated with Gamma-Rays by Thermal Treatments

Reduction in Majority-Carrier Concentration in Lightly-Doped 4H-SiC Epilayers by Electron Irradiation

Reduction of Effective Carrier Density and Charge Collection Efficiency in SiC Devices Due to Radiations

Refreshable Decrease In Peak Height Of Ion Beam Induced Transient Current From Silicon Carbide Metal-Oxide-Semiconductor Capacitors

scholarly article published 2011

Relationship between C-Face Defects and Threshold-Voltage Instability in C-Face 4H-SiC MOSFETs Studied by Electrically Detected Magnetic Resonance

Relationship between defects induced by irradiation and reduction of hole concentration in Al-doped 4H–SiC

Reversible changes in temperature dependence of electric conductivity of hydrogenated amorphous silicon caused by proton irradiation

Robust Hall Effect Magnetic Field Sensors for Operation at High Temperatures and in Harsh Radiation Environments

Role of the impurities in production rates of radiation-induced defects in silicon materials and solar cells

article published in 2001

Room Temperature Electrical Control of Single Photon Sources at 4H-SiC Surface

Room temperature quantum emission from cubic silicon carbide nanoparticles

scientific article published on 24 July 2014

Scalable Quantum Photonics with Single Color Centers in Silicon Carbide

scientific article

Scalable Quantum Photonics with Single Color Centers in Silicon Carbide

scholarly article published 2017

Self-organized dots of GaN:Mn grown by molecular beam epitaxy

Shallow Defects Observed in As-Grown and Electron-Irradiated or He + -Implanted Al-Doped 4H-SiC Epilayers

scholarly article published April 2010

Shallow P Donors in 3C-, 4H- and 6H-SiC

scholarly article published October 2006

Si Substrate Suitable for Radiation-Resistant Space Solar Cells

Single Event Gate Rupture in SiC MOS Capacitors with Different Gate Oxide Thicknesses

Single photon sources in 4H-SiC metal-oxide-semiconductor field-effect transistors

article

Single spin optically detected magnetic resonance with 60–90 GHz (E-band) microwave resonators ⬇️

scientific article published on 01 June 2015

Single-Alpha-Particle-Induced Charge Transient Spectroscopy of the 6H-SiC ${\hbox{p}}^{+}{\hbox{n}}$ Diode Irradiated With High-Energy Electrons

Single-Event Damage Observed in GaN-on-Si HEMTs for Power Control Applications

Single-photon emitting diode in silicon carbide ⬇️

scientific article

Singlet levels of the NV−centre in diamond ⬇️

Soft-Error Rate in a Logic LSI Estimated From SET Pulse-Width Measurements

article

Spatial, LET and Range Dependence of Enhanced Charge Collection by Single Ion Strike in 4H-SiC MESFETs

Spatial, LET and range dependence of enhanced charge collection by single ion strike in 4H-SiC MESFETs

Spectral response, carrier lifetime, and photocurrents of SiC photocathodes

Spin multiplicity and charge state of a silicon vacancy(TV2a)in4H-SiC determined by pulsed ENDOR

scholarly article in Physical Review B, vol. 72 no. 23, December 2005

Spin-controlled generation of indistinguishable and distinguishable photons from silicon vacancy centres in silicon carbide

scientific article published on 20 May 2020

Stark tuning and electrical charge state control of single divacancies in silicon carbide

scholarly article by Charles F. de las Casas et al published 25 December 2017 in Applied Physics Letters

Stimulated emission from nitrogen-vacancy centres in diamond. ⬇️

scientific article published on 27 January 2017

Storage and retrieval of microwave fields at the single-photon level in a spin ensemble ⬇️

Strong blue emission from Er3+ doped in AlxGa1–xN

Strongly coupled diamond spin qubits by molecular nitrogen implantation

scholarly article in Physical Review B, vol. 88 no. 20, November 2013

Structural And Magnetic Properties Of Mn-Doped SiC

Structural analysis of (Ga,Mn)N epilayers and self-organized dots using MeV ion channeling

Study of Ion-Beam-Induced Damage and Luminescence Properties in Terbium-Implanted AlGaN

Study of Proton Irradiation Effects on p- and n-Type GaN Based-on Two-Terminal Resistance Dependence on 380keV Proton Fluence

Study of electron irradiation-induced defects in CuInSe2 and CuInxGa1-xSe2 by electron spin resonance

Study on Optimum Structure of AlInGaP Top Cell for Triple-Junction Space Solar Cell

Study the effects of proton irradiation on GaAs/Ge solar cells

Subpicotesla Diamond Magnetometry

Surface modifications of hydrogen storage alloy by heavy ion beams with keV to MeV irradiation energies

article published in 2015

Temperature Dependence of Electric Conductivities in Femtosecond Laser Modified Areas in Silicon Carbide

scholarly article published February 2014

Temperature influence on performance degradation of hydrogenated amorphous silicon solar cells irradiated with protons

Temporal Donor Generation in Undoped Hydrogenated Amorphous Silicon Induced by Swift Proton Bombardment

Temporal electric conductivity variations of hydrogenated amorphous silicon due to high energy protons

The Carbon Vacancy Related EI4 Defect in 4H-SiC

The EI4 EPR centre in 6H SiC

The Role of Ion Track Structure on High-Injection Carrier Dynamics in High-Speed Si and III-V Optoelectronic Sensors

The effect of luminescence coupling in external quantum efficiency measurement of multi-junction solar cells

The role of a radial ion-track distribution in semiconductors studied by numerical simulations

The study of dependency of external quantum efficiency of triple-junction solar cells on measurement condition

The valence of Pr IN PrBa2Cu3O7−δ and the related compounds as determined by neutron powder diffraction

Theoretical Optimization of Base Doping Concentration for Radiation Resistance of InGaP Subcells of InGaP/GaAs/Ge Based on Minority-Carrier Lifetime

Thermal Histories of Defect Centers as Measured by Low Temperature Photoluminescence in n- and p-Type 4H SiC Epilayers Generated by Irradiation with 170 keV or 1 MeV Electrons

Thermal Stability of Deep-Level Defects in High-Purity Semi-Insulating 4H-SiC Substrate Studied by Admittance Spectroscopy

Thermal Stability of Defect Centers in n- and p-Type 4H-SiC Epilayers Generated by Irradiation with High-Energy Electrons

Three-Dimensional Proton Beam Writing of Optically Active Coherent Vacancy Spins in Silicon Carbide.

scientific article published on 28 March 2017

Threshold voltage instability and hysteresis in gamma-rays irradiated 4H-SiC junction field effect transistors

scientific article published in 2022

Time Resolved Ion Beam Induced Current measurements on MOS capacitors using a cyclotron microbeam

Towards a spin-ensemble quantum memory for superconducting qubits ⬇️

scholarly article by Cécile Grezes et al published August 2016 in Comptes Rendus Physique

Transient Analysis of an Extended Drift Region in a 6H-SiC Diode Formed by a Single Alpha Particle Strike and Its Contribution to the Increased Charge Collection

Transient Currents Induced in 6H-SiC MOS Capacitors by Oxygen Ion Incidence

Transient Response of Charge Collection by Single Ion Strike in 4H-SiC MESFETs

Transient Response to High Energy Heavy Ions in 6H-SiC n + p Diodes

Transient current induced in thin film diamonds by swift heavy ions

Transient current mapping obtained from silicon photodiodes using focused ion microbeams with several hundreds of MeV

Triple nitrogen-vacancy centre fabrication by C5N4Hn ion implantation.

scientific article published on 13 June 2019

Understanding the long-term performance of space-based solar cells

Universal coherence protection in a solid-state spin qubit

scientific article

Using Intrinsic Defect Spectra in 4H SiC as Imbedded Thermometers in the Temperature Range from 100°C to 1500°C

Vector Magnetometry Using Silicon Vacancies in4H-SiC Under Ambient Conditions ⬇️

Water-tree property of cross-linked polyethylene-insulated cable under γ-ray irradiation

article published in 2011

X-ray characterization of short-pulse laser illuminated hydrogen storage alloys having very high performance

pH Nanosensor Using Electronic Spins in Diamond

scientific article published on 20 September 2019

γ-Ray irradiation effects on 6H-SiC MOSFET