A Novel Sb2Te3 Polymorph Stable at the Nanoscale

Atomic-scale study of the amorphous-to-crystalline phase transition mechanism in GeTe thin films

scientific article published on 15 August 2017

Au-catalyzed self assembly of GeTe nanowires by MOCVD

Au-catalyzed synthesis and characterisation of phase change Ge-doped Sb–Te nanowires by MOCVD

Chemical vapor deposition of chalcogenide materials for phase-change memories

Controlled intrinsic carbon doping in MOVPE-grown GaAs layers by using TMGa and TBAs

article published in 2003

Crystal structure assessment of Ge–Sb–Te phase change nanowires ⬇️

scientific article published on February 21, 2013

Determination of the valence band offset of MOVPE-grownIn0.48Ga0.52P∕GaAsmultiple quantum wells by admittance spectroscopy

scholarly article in Physical Review B, vol. 77 no. 12, March 2008

Effect of nitrogen doping on the thermal conductivity of GeTe thin films

article published in 2013

Effect of the growth sequence on the properties of InGaP/GaAs/InGaP quantum wells grown by LP-MOVPE from group-V metalorganic sources

article published in 2004

Electrical investigation of carbon intrinsically-doped GaAs layers grown by metalorganic vapour phase epitaxy from TMGa and TBAs

Electronic properties of crystalline Ge1-xSbxTey thin films

Evolution of thermal conductivity of In3SbβTeγthin films up to 550 °C

Growth study and characterization of In–Sb–Te compounds deposited onto different substrates by metal–organic chemical vapour deposition

article

Growth study of GexSbyTez deposited by MOCVD under nitrogen for non-volatile memory applications

article published in 2008

High-Density Sb2 Te3 Nanopillars Arrays by Templated, Bottom-Up MOCVD Growth

scientific article published on 21 June 2019

Investigation of GaAs/InGaP superlattices for quantum well solar cells

Low power phase change memory switching of ultra-thin In3Sb1Te2 nanowires

MOCVD growth and structural characterization of In-Sb-Te nanowires

Metal organic chemical vapor deposition of phase change Ge1Sb2Te4 nanowires

scientific article published on 6 March 2012

Novel near-infrared emission from crystal defects in MoS2 multilayer flakes.

scientific article published on 4 October 2016

On the electrical properties of Si-doped InGaP layers grown by low pressure‐metalorganic vapor phase epitaxy

Photoluminescence investigation of superlattice ordering in organometallic vapour phase epitaxy grown InGaP layers

article published in 2001

Single-step Au-catalysed synthesis and microstructural characterization of core–shell Ge/In–Te nanowires by MOCVD

Structural and electrical analysis of In-Sb-Te-based PCM cells

article

Structural and optical characterization of MOVPE grown InGaP/GaAs MQWs for advanced photovoltaic devices

Temperature-dependent thermal characterization of Ge2Sb2Te5and related interfaces by the photothermal radiometry technique

Thermal characterization of the SiO2-Ge2Sb2Te5 interface from room temperature up to 400°C

article published in 2010

Thermal properties of In–Sb–Te films and interfaces for phase change memory devices

Towards a uniform and large-scale deposition of MoS2 nanosheets via sulfurization of ultra-thin Mo-based solid films.

scientific article published on 17 March 2016

Ultraviolet optical near-fields of microspheres imprinted in phase change films

article published in 2010

Weak Antilocalization in Granular Sb2 Te3 Thin Films Deposited by MOCVD