2D tunnel transistors for ultra-low power applications: Promises and challenges

article

A Multiscale Modeling of Triple-Heterojunction Tunneling FETs ⬇️

A predictive analytic model for high-performance tunneling field-effect transistors approaching non-equilibrium Green's function simulations

article

Achieving a higher performance in bilayer graphene FET - strain engineering

Alloy Engineered Nitride Tunneling Field-Effect Transistor: A Solution for the Challenge of Heterojunction TFETs

article

Atomistic simulation of steep subthreshold slope Bi-layer MoS 2 transistors

article

Brillouin zone unfolding method for effective phonon spectra ⬇️

scholarly article in Physical Review B, vol. 90 no. 20, November 2014

Can Homojunction Tunnel FETs Scale Below 10 nm? ⬇️

article by Hesameddin Ilatikhameneh et al published January 2016 in IEEE Electron Device Letters

Channel Thickness Optimization for Ultrathin and 2-D Chemically Doped TFETs

Combination of Equilibrium and Nonequilibrium Carrier Statistics Into an Atomistic Quantum Transport Model for Tunneling Heterojunctions

article published in 2017

Configurable Electrostatically Doped High Performance Bilayer Graphene Tunnel FET

Design Guidelines for Sub-12 nm Nanowire MOSFETs

Design Rules for High Performance Tunnel Transistors From 2-D Materials ⬇️

article

Dielectric Engineered Tunnel Field-Effect Transistor ⬇️

article

Dramatic Impact of Dimensionality on the Electrostatics of P-N Junctions and Its Sensing and Switching Applications

Electrically Tunable Bandgaps in Bilayer MoS₂.

scientific article published on 11 November 2015

Electrically doped 2D material tunnel transistor

article

Electrically doped WTe 2 tunnel transistors

article

Engineering the optical transitions of self-assembled quantum dots

Extremely high simulated ballistic currents in triple-heterojunction tunnel transistors

article

Few-layer Phosphorene: An Ideal 2D Material For Tunnel Transistors ⬇️

scientific article published on 27 June 2016

From Fowler–Nordheim to Nonequilibrium Green’s Function Modeling of Tunneling ⬇️

Multiscale transport simulation of nanoelectronic devices with NEMO5

scientific article published in August 2016

Optimization of the anharmonic strain model to capture realistic strain distributions in quantum dots

Optimum High-k Oxide for the Best Performance of Ultra-Scaled Double-Gate MOSFETs ⬇️

Polarization-Engineered III-Nitride Heterojunction Tunnel Field-Effect Transistors

article

Quantum dot lab: an online platform for quantum dot simulations

Saving Moore's Law Down To 1 nm Channels With Anisotropic Effective Mass ⬇️

scientific article published on 19 August 2016

Scaling Theory of Electrically Doped 2D Transistors ⬇️

article

Sensitivity Challenge of Steep Transistors

article

Switching Mechanism and the Scalability of Vertical-TFETs

Theoretical study of strain-dependent optical absorption in a doped self-assembled InAs/InGaAs/GaAs/AlGaAs quantum dot.

scientific article

Thickness Engineered Tunnel Field-Effect Transistors Based on Phosphorene ⬇️

article

Transport in vertically stacked hetero-structures from 2D materials

Tunnel Field-Effect Transistors in 2-D Transition Metal Dichalcogenide Materials ⬇️

article

Tunneling: The major issue in ultra-scaled MOSFETs

Understanding contact gating in Schottky barrier transistors from 2D channels

scientific article published on 3 October 2017

Unfolding and effective bandstructure calculations as discrete real- and reciprocal-space operations

Universal Behavior of Atomistic Strain in Self-Assembled Quantum Dots ⬇️