Analysis of Dark Current Mechanisms for Split-Off Band Infrared Detectors at High Temperatures

Analysis of Extended Threshold Wavelength Photoresponse in Nonsymmetrical p-GaAs/AlGaAs Heterostructure Photodetectors ⬇️

Anomalous electrical conductivity of a gold thin film percolation system

scholarly article in Physical Review B, vol. 66 no. 11, September 2002

Band offsets and carrier dynamics of type-II InAs/GaSb superlattice photodetectors studied by internal photoemission spectroscopy

Cubic MgxZn1−xO films grown on SiO2 substrates

Design of resonant-cavity-enhanced multi-band photodetectors

Dielectric function model for p-type semiconductor inter-valence band transitions

Direct observation of spin-orbit splitting and phonon-assisted optical transitions in the valence band by internal photoemission spectroscopy ⬇️

scholarly article in Physical Review B, vol. 88 no. 20, November 2013

Graded-barrier heterostructures for photovoltaic split-off infrared detection

Hot-carrier photodetector beyond spectral limit

InAs/GaAs p-type quantum dot infrared photodetector with higher efficiency

InAs0.45P0.55/InP strained multiple quantum wells intermixed by inductively coupled plasma etching

Infrared photodetector with wavelength extension beyond the spectral limit

Light-hole and heavy-hole transitions for high-temperature long-wavelength infrared detection

Luminescence enhancement of plasma-etched InAsP∕InGaAsP quantum wells

Luminescent properties of annealed and directly wafer-bonded InAsP/InGaAsP multiple quantum wells

Observations of interfaces in direct wafer-bonded InP–GaAs structures

Optical Investigations of Directly Wafer-Bonded InP–GaAs Heterojunctions

Optical study of HgCdTe infrared photodetectors using internal photoemission spectroscopy

Performance improvements of a split-off band infra-red detector using a graded barrier ⬇️

Plasma frequency and dielectric function dependence on doping and temperature for p-type indium phosphide epitaxial films

scientific article published on 04 October 2012

Publisher’s Note: “Design of resonant-cavity-enhanced multi-band photodetectors” [J. Appl. Phys. 110, 043112 (2011)]

Room temperature continuous-wave operation of InAs∕InP(100) quantum dot lasers grown by gas-source molecular-beam epitaxy

Room temperature photovoltaic response of split-off band infrared detectors with a graded barrier

Structural and electrical properties of an Au film system deposited on silicone oil surfaces

Study of valence-band intersublevel transitions in InAs/GaAs quantum dots-in-well infrared photodetectors

Temperature dependence of photoluminescence from as-grown and plasma-etched InAs0.45P0.55/In0.68Ga0.32As0.45P0.55 strained single quantum well

Temperature-dependent far-infrared response of epitaxial multilayer graphene

Temperature-dependent internal photoemission probe for band parameters

scholarly article in Physical Review B, vol. 86 no. 19, November 2012

Transparent Thin-Film Transistors Using ZnMgO as Dielectrics and Channel

article

Tunable hot-carrier photodetection beyond the bandgap spectral limit ⬇️

Two-color quantum dot laser with tunable wavelength gap

article by S. G. Li et al published 21 December 2009 in Applied Physics Letters

Wavelength-extended photovoltaic infrared photodetectors ⬇️