A comparative study of near-UV emitting InGaN quantum wells with AlGaN and AlInGaN barriers

A comparison of the optical properties of InGaN/GaN multiple quantum well structures grown with and without Si-doped InGaN prelayers

article published in 2016

A full free spectral range tuning of p-i-n doped gallium nitride microdisk cavity

A study of the inclusion of prelayers in InGaN/GaN single- and multiple-quantum-well structures

A study of the optical and polarisation properties of InGaN/GaN multiple quantum wells grown on a-plane and m-plane GaN substrates

scientific article

Alloy content determination of fully strained and partially relaxed semi-polar group III-nitrides by x-ray diffraction

An investigation into defect reduction techniques for growth of non-polar GaN on sapphire

article

Analysis of defect-related inhomogeneous electroluminescence in InGaN/GaN QW LEDs

Application of the Taguchi method for assessment of surface treatment procedures for Ti/n-type GaN contacts

scientific article published in April 2004

Assessment of scanning spreading resistance microscopy for application to n-type GaN

Assessment of the performance of scanning capacitance microscopy for n-type gallium nitride

scholarly article by Joy Sumner et al published 2008 in Journal of Vacuum Science & Technology B

Atom probe extended to AlGaN: three-dimensional imaging of a Mg-doped AlGaN/GaN superlattice

Atom probe reveals the structure of Inx Ga1–xN based quantum wells in three dimensions

Atom probe tomography and transmission electron microscopy of a Mg-doped AlGaN/GaN superlattice

article

Atom probe tomography assessment of the impact of electron beam exposure on InxGa1−xN/GaN quantum wells

Bias dependence and correlation of the cathodoluminescence and electron beam induced current from an InGaN/GaN light emitting diode

article

Calibration and Applications of Scanning Capacitance Microscopy: n-Type GaN

Carrier Density Dependent Localization and Consequences for Efficiency Droop in InGaN/GaN Quantum Well Structures

Carrier distributions in InGaN/GaN light-emitting diodes

Carrier localization in the vicinity of dislocations in InGaN

Carrier localization mechanisms in InxGa1−xN/GaN quantum wells

article

Cathodoluminescence hyperspectral imaging of trench-like defects in InGaN/GaN quantum well structures

article published in 2014

Cavity Enhancement of Single Quantum Dot Emission in the Blue

scientific article published on 27 December 2009

Cavity-enhanced blue single-photon emission from a single InGaN∕GaN quantum dot

article

Characterisation of InGaN by Photoconductive Atomic Force Microscopy

Characterization of InGaN quantum wells with gross fluctuations in width

Characterization of unintentional doping in nonpolar GaN

Comparative studies of efficiency droop in polar and non-polar InGaN quantum wells

article published in 2016

Compositional contrast in AlxGa1−xN/GaN heterostructures using scanning spreading resistance microscopy

article

Compositional inhomogeneity of a high-efficiency InxGa1−xN based multiple quantum well ultraviolet emitter studied by three dimensional atom probe

article

Control of the Oscillator Strength of the Exciton in a Single InGaN-GaN Quantum Dot

scientific article published in Physical Review Letters

Controlled tuning of whispering gallery modes of GaN/InGaN microdisk cavities

Correlations between the morphology and emission properties of trench defects in InGaN/GaN quantum wells

article published in 2013

Defect Reduction in Semi-Polar (112̄2) Gallium Nitride Grown Using Epitaxial Lateral Overgrowth

Determination of relative internal quantum efficiency in InGaN∕GaN quantum wells

Dielectric response of wurtzite gallium nitride in the terahertz frequency range

Dislocation density-dependent quality factors in InGaN quantum dot containing microdisks

Dislocations in AlGaN: Core Structure, Atom Segregation, and Optical Properties

scientific article published on 14 July 2017

Dynamics of carrier redistribution processes in InGaN/GaN quantum well structures

Effect of QW growth temperature on the optical properties of blue and green InGaN/GaN QW structures

Effect of QW growth temperature on the optical properties of blue and green InGaN/GaN QW structures

Effect of electron blocking layers on the conduction and valence band profiles of InGaN/GaN LEDs

Effect of growth temperature and V/III-ratio on the surface morphology of MOVPE-grown cubic zincblende GaN

Effect of overgrowth conditions on the optical properties of lateral epitaxially overgrown a -plane GaN

Effect of the barrier growth mode on the luminescence and conductivity micron scale uniformity of InGaN light emitting diodes

Effects of KOH etching on the properties of Ga-polar n-GaN surfaces

scientific article published in June 2006

Effects of a Si-doped InGaN Underlayer on the Optical Properties of InGaN/GaN Quantum Well Structures with Different Numbers of Quantum Wells

scientific article published on 15 September 2018

Effects of an InGaN prelayer on the properties of InGaN/GaN quantum well structures

Effects of quantum well growth temperature on the recombination efficiency of InGaN/GaN multiple quantum wells that emit in the green and blue spectral regions

Electric fields in AlGaN/GaN quantum well structures

Electrically driven single InGaN/GaN quantum dot emission

Electrochemical growth of ZnO nano-rods on polycrystalline Zn foil

scholarly article by M H Wong et al published 1 August 2003 in Nanotechnology

Electron Channeling Contrast Imaging of Defects in III-Nitride Semiconductors

Electronic structure of GaN andInxGa1−xNmeasured with electron energy-loss spectroscopy

scholarly article in Physical Review B, vol. 66 no. 12, September 2002

Energy landscape and carrier wave-functions in InGaN/GaN quantum wells

Erratum: “Alloy content determination of fully strained and partially relaxed semi-polar group III-nitrides by x-ray diffraction” [J. Appl. Phys. 114, 053520 (2013)]

scholarly article published in Journal of Applied Physics

Evaluation of growth methods for the heteroepitaxy of non-polar ( 11 2 ¯ 0 ) GAN on sapphire by MOVPE

Evidence for Dark States in the Temperature Dependent Recombination Dynamics of InGaN/GaN Quantum Wells

Exciton localization in InGaN/GaN single quantum well structures

Experimental and theoretical study of the quantum-confined Stark effect in a single InGaN/GaN quantum dot under applied vertical electric field

Fabrication of nanoscale heterostructure devices with a focused ion beam microscope

article published in 2003

Fundamentals of X-ray Diffraction Characterisation of Strain in GaN Based Compounds

GaN-InGaN Quantum Well and LED Structures Grown in a Close Coupled Showerhead (CCS) MOCVD Reactor

GaN/InGaN quantum wells grown in a close coupled showerhead reactor

Gross well-width fluctuations in InGaN quantum wells

Growth and assessment of InGaN quantum dots in a microcavity: A blue single photon source

Growth and optical characterisation of multilayers of InGaN quantum dots

article

Growth modes in heteroepitaxy of InGaN on GaN

Growth of InGaN quantum dots on GaN by MOVPE, employing a growth temperature nitrogen anneal

Growth of InGaN quantum dots with AlGaN barrier layers via modified droplet epitaxy

Growth of non-polar (11-20) InGaN quantum dots by metal organic vapour phase epitaxy using a two temperature method

article published in 2014

Growth of non-polar InGaN quantum dots with an underlying AlN/GaN distributed Bragg reflector by metal-organic vapour phase epitaxy

High excitation carrier density recombination dynamics of InGaN/GaN quantum well structures: Possible relevance to efficiency droop

article

High excitation density recombination dynamics in InGaN/GaN quantum well structures in the droop regime

High photoluminescence quantum efficiency InGaN multiple quantum well structures emitting at 380nm

article published in 2007

High quantum efficiency InGaN/GaN structures emitting at 540 nm

High temperature stability in non-polar (11$ \bar 2 $0) InGaN quantum dots: Exciton and biexciton dynamics

article

High-Speed Substrate-Emitting Micro-Light-Emitting Diodes for Applications Requiring High Radiance

Highlighting threading dislocations in MOVPE-grown GaN using an in situ treatment with SiH4 and NH3

article

Imaging dislocations in gallium nitride across broad areas using atomic force microscopy

scientific article

InGaN quantum dots grown by metalorganic vapor phase epitaxy employing a post-growth nitrogen anneal

article

InGaN super-lattice growth for fabrication of quantum dot containing microdisks

Indium clustering in a-plane InGaN quantum wells as evidenced by atom probe tomography

scholarly article by Fengzai Tang et al published 16 February 2015 in Applied Physics Letters

Insights into the growth mechanism of InxGa1−xN epitaxial nanostructures formed using a silane predose

Insights into the origin of threading dislocations in GaN∕Al2O3 from atomic force microscopy

Investigating efficiency droop in InGaN/GaN quantum well structures using ultrafast time-resolved terahertz and photoluminescence spectroscopy

Investigation of optimum growth conditions of InAlN for application in distributed Bragg reflectors

article published in 2010

Investigation of unintentional indium incorporation into GaN barriers of InGaN/GaN quantum well structures

scholarly article by Fabien C-P Massabuau et al published 19 December 2014 in Physica Status Solidi B

Lattice distortions in GaN on sapphire using the CBED-HOLZ technique

scientific article

Local carrier recombination and associated dynamics in m-plane InGaN/GaN quantum wells probed by picosecond cathodoluminescence

Low defect large area semi-polar (11[Formula: see text]2) GaN grown on patterned (113) silicon

scientific article published on 9 December 2014

Low temperature carrier redistribution dynamics in InGaN/GaN quantum wells

article

Low temperature photoluminescence and cathodoluminescence studies of nonpolar GaN grown using epitaxial lateral overgrowth

Low threshold, room-temperature microdisk lasers in the blue spectral range

article published in 2013

Materials challenges for devices based on single, self-assembled InGaN quantum dots

article

Mechanisms preventing trench defect formation in InGaN/GaN quantum well structures using hydrogen during GaN barrier growth

Mg dopant distribution in an AlGaN/GaN p-type superlattice assessed using atom probe tomography, TEM and SIMS

Microstructural characterisation of a prototype layer structure for a GaN-based photonic crystal cavity

Microstructural dependency of optical properties of m-plane InGaN multiple quantum wells grown on 2° misoriented bulk GaN substrates

Microstructural origins of localization in InGaN quantum wells

Microstructural, optical, and electrical characterization of semipolar (112¯2) gallium nitride grown by epitaxial lateral overgrowth

scholarly article by Tongtong Zhu et al published 15 October 2010 in Journal of Applied Physics

Misfit dislocations in In-rich InGaN/GaN quantum well structures

Morphological changes of InGaN epilayers during annealing assessed by spectral analysis of atomic force microscopy images

Morphological, structural, and emission characterization of trench defects in InGaN/GaN quantum well structures

Nanocathodoluminescence Reveals Mitigation of the Stark Shift in InGaN Quantum Wells by Si Doping

scientific article published on 21 October 2015

Non-linear excitation and correlation studies of single InGaN quantum dots

Non-polar (11$ \bar 2 $0) InGaN quantum dots with short exciton lifetimes grown by metal-organic vapour phase epitaxy

article

Non-polar (11-20) InGaN quantum dots with short exciton lifetimes grown by metal-organic vapor phase epitaxy

article

Optical Studies of Non-linear Absorption in Single InGaN/GaN Quantum Dots

Optical and micro-structural properties of high photoluminescence efficiency InGaN/AlInGaN quantum well structures

Optical and microstructural studies of InGaN∕GaN single-quantum-well structures

article by Darren M Graham et al published 15 May 2005 in Journal of Applied Physics

Optical cavity efficacy and lasing of focused ion beam milled GaN/InGaN micropillars

Optical studies of non-polar m-plane (11¯00) InGaN/GaN multi-quantum wells grown on freestanding bulk GaN

Optimisation of GaN overgrowth of InAlN for DBRs

Photoluminescence Studies of Exciton Recombination and Dephasing in Single InGaN Quantum Dots

Photoluminescence studies of cubic GaN epilayers

Polarized photoluminescence excitation spectroscopy of a-plane InGaN/GaN multiple quantum wells grown on r-plane sapphire

Practical Issues for Atom Probe Tomography Analysis of III-Nitride Semiconductor Materials

scientific article published on 30 April 2015

Practical issues in carrier-contrast imaging of GaN structures

Properties of trench defects in InGaN/GaN quantum well structures

Q-factor measurements on planar nitride cavities

Quantification of unintentional doping in non-polar GaN using scanning capacitance microscopy

Quantum-confined Stark effect in a single InGaN quantum dot under a lateral electric field

article

Recombination mechanisms in heteroepitaxial non-polar InGaN/GaN quantum wells

Resonant excitation photoluminescence studies of InGaN∕GaN single quantum well structures

Resonant photoluminescence excitation studies of InGaN/GaN single quantum wells

Resonant photoluminescence studies of carrier localisation in c-plane InGaN/GaN quantum well structures

scientific article published on 20 March 2018

Response to “Comment on ‘The effects of Si doping on dislocation movement and tensile stress in GaN films’” [J. Appl. Phys. 109, 073509 (2011)]

Response to “Comment on ‘Three-dimensional atom probe studies of an InxGa1−xN∕GaN multiple quantum well structure: assessment of possible indium clustering’” [Appl. Phys. Lett. 91, 176101 (2007)]

article

Role of gross well-width fluctuations in bright, green-emitting single InGaN∕GaN quantum well structures

Room temperature PL efficiency of InGaN/GaN quantum well structures with prelayers as a function of number of quantum wells

SCM and SIMS investigations of unintentional doping in III-nitrides

article published in 2015

Scanning capacitance microscopy as a tool for the assessment of unintentional doping in GaN

Scanning capacitance microscopy studies of GaN grown by epitaxial layer overgrowth

Scanning capacitance microscopy studies of unintentional doping in epitaxial lateral overgrowth GaN

Segregation of In to dislocations in InGaN.

scientific article published on 21 January 2015

Self-assembled Multilayers of Silica Nanospheres for Defect Reduction in Non- and Semipolar Gallium Nitride Epitaxial Layers

scientific article

SiH4 exposure of GaN surfaces: A useful tool for highlighting dislocations

Simulation of the quantum-confined stark effect in a single InGaN quantum dot

Structural, electronic, and optical properties ofm-plane InGaN/GaN quantum wells: Insights from experiment and atomistic theory ⬇️

scholarly article in Physical Review B, vol. 92 no. 23, December 2015

Surface morphology of homoepitaxial c-plane GaN: Hillocks and ridges

Temporal variation in photoluminescence from single InGaN quantum dots

article

The ABC model of recombination reinterpreted: Impact on understanding carrier transport and efficiency droop in InGaN/GaN light emitting diodes

The Spatial Distribution of Threading Dislocations in Gallium Nitride Films

scholarly article by Michelle A. Moram et al published 19 October 2009 in Advanced Materials

The Use of Spatial Analysis Techniques in Defect and Nanostructure Studies

The consequences of high injected carrier densities on carrier localization and efficiency droop in InGaN/GaN quantum well structures

The effect of Si on the growth mode of GaN

The effect of a Mg-doped GaN cap layer on the optical properties of InGaN/AlGaN multiple quantum well structures

The effect of annealing on the surface morphology of strained and unstrained InxAl1−xN thin films

The effect of dislocations on the efficiency of InGaN/GaN solar cells

The effect of temperature and ammonia flux on the surface morphology and composition of InxAl1−xN epitaxial layers

article

The effects of Si doping on dislocation movement and tensile stress in GaN films

The effects of Si-doped prelayers on the optical properties of InGaN/GaN single quantum well structures

The effects of annealing on non-polar (112¯0) a-plane GaN films

The effects of varying metal precursor fluxes on the growth of InAlN by metal organic vapour phase epitaxy

article

The effects of varying threading dislocation density on the optical properties of InGaN/GaN quantum wells

The impact of ScOxNyinterlayers on unintentional doping and threading dislocations in GaN

The impact of gross well width fluctuations on the efficiency of GaN-based light emitting diodes

article by Rachel Angharad Oliver et al published 30 September 2013 in Applied Physics Letters

The impact of growth parameters on trench defects in InGaN/GaN quantum wells

article published in 2014

The impact of hydrogen on indium incorporation and surface accumulation in InAlN epitaxy

scholarly article by Thomas C. Sadler et al published September 2011 in Journal of Crystal Growth

The impact of substrate miscut on the microstructure and photoluminescence efficiency of (0001) InGaN quantum wells grown by a two-temperature method

The impact of substrate miscut on the morphology of InGaN epitaxial layers subjected to a growth interruption

The impact of trench defects in InGaN/GaN light emitting diodes and implications for the “green gap” problem

The influence of ammonia on the growth mode in InGaN/GaN heteroepitaxy

The influence of coalescence time on unintentional doping in GaN/sapphire

The microstructure of non-polar a-plane (11 2¯0) InGaN quantum wells

The nature of carrier localisation in polar and nonpolar InGaN/GaN quantum wells

article published in 2016

The negligible effects of miscut on indium aluminium nitride growth

The origin and reduction of dislocations in Gallium Nitride

scholarly article by Rachel Angharad Oliver et al published 5 March 2008 in Journal of Materials Science: Materials in Electronics

The role of rough surfaces in quantitative ADF imaging of gallium nitride-based materials

The role of strain in controlling the surface morphology of AlxGa1−xN following in situ treatment with SiH4 and NH3

Theoretical and experimental analysis of the photoluminescence and photoluminescence excitation spectroscopy spectra of m-plane InGaN/GaN quantum wells

Threading dislocation reduction in (0001) GaN thin films using SiNx interlayers

Three methods for the growth of InGaN nanostructures by MOVPE

Three-dimensional atom probe analysis of green- and blue-emitting InxGa1−xN∕GaN multiple quantum well structures

article

Three-dimensional atom probe studies of an InxGa1−xN∕GaN multiple quantum well structure: Assessment of possible indium clustering

scholarly article by Mark J. Galtrey et al published 5 February 2007 in Applied Physics Letters

Time-integrated and time-resolved photoluminescence studies of InGaN quantum dots

Time-resolved dynamics in single InGaN quantum dots

article

Time-resolved dynamics in single InGaN quantum dots (Invited Paper)

article

Towards a better understanding of nano-islands formed during atmospheric pressure MOVPE

Towards a better understanding of trench defects in InGaN/GaN quantum wells

Two-photon absorption from single InGaN/GaN quantum dots

article

Two-photon autocorrelation measurements on a single InGaN/GaN quantum dot.

scientific article published on 27 May 2009

Unintentional doping in GaN assessed by scanning capacitance microscopy

Validity of Vegard’s rule for Al1−xInxN (0.08  <  x  <  0.28) thin films grown on GaN templates

X-ray reflectivity method for the characterization of InGaN/GaN quantum well interface