A comparative study of near-UV emitting InGaN quantum wells with AlGaN and AlInGaN barriers

A comparison of the optical properties of InGaN/GaN multiple quantum well structures grown with and without Si-doped InGaN prelayers

article published in 2016

A study of the inclusion of prelayers in InGaN/GaN single- and multiple-quantum-well structures

A study of the optical and polarisation properties of InGaN/GaN multiple quantum wells grown on a-plane and m-plane GaN substrates

scientific article

An investigation into defect reduction techniques for growth of non-polar GaN on sapphire

article

Carrier distributions in InGaN/GaN light-emitting diodes

Carrier dynamics in non-polar GaN/AlGaN quantum wells intersected by basal-plane stacking faults

scientific article published on 10 June 2010

Carrier localization mechanisms in InxGa1−xN/GaN quantum wells

article

Characterising the degree of polarisation anisotropy in an a -plane GaN film

Comparative studies of efficiency droop in polar and non-polar InGaN quantum wells

article published in 2016

Defect Reduction in Semi-Polar (112̄2) Gallium Nitride Grown Using Epitaxial Lateral Overgrowth

Determination of relative internal quantum efficiency in InGaN∕GaN quantum wells

Diatom Frustules as a Biomineralized Scaffold for the Growth of Molybdenum Disulfide Nanosheets

Dielectric response of wurtzite gallium nitride in the terahertz frequency range

Effect of overgrowth conditions on the optical properties of lateral epitaxially overgrown a -plane GaN

Effect of stacking faults on the photoluminescence spectrum of zincblende GaN

scientific article published on 14 May 2018

Effects of a Si-doped InGaN Underlayer on the Optical Properties of InGaN/GaN Quantum Well Structures with Different Numbers of Quantum Wells

scientific article published on 15 September 2018

Effects of an InGaN prelayer on the properties of InGaN/GaN quantum well structures

Effects of disorder on electron spin dynamics in GaAs quantum wells

Effects of disorder on electron spin dynamics in a semiconductor quantum well

article

Effects of quantum well growth temperature on the recombination efficiency of InGaN/GaN multiple quantum wells that emit in the green and blue spectral regions

Electric Field Dependent Photoluminescence Studies of Photorefractive Polymer/Semiconductor Nanoparticle Composites

Electric field dependent photoluminescence studies of nanoparticle sensitized photorefractive polymers

Electric fields in AlGaN/GaN quantum well structures

Electronic and optical properties of nonpolara-plane GaN quantum wells

scholarly article in Physical Review B, vol. 82 no. 12, September 2010

Energy landscape and carrier wave-functions in InGaN/GaN quantum wells

Evaluation of growth methods for the heteroepitaxy of non-polar ( 11 2 ¯ 0 ) GAN on sapphire by MOVPE

Exciton localization in InGaN/GaN single quantum well structures

GaN-InGaN Quantum Well and LED Structures Grown in a Close Coupled Showerhead (CCS) MOCVD Reactor

GaN/InGaN quantum wells grown in a close coupled showerhead reactor

Gamma -X mixing in the miniband structure of a GaAs/AlAs superlattice

scientific article published on 01 November 1989

High excitation carrier density recombination dynamics of InGaN/GaN quantum well structures: Possible relevance to efficiency droop

article

High excitation density recombination dynamics in InGaN/GaN quantum well structures in the droop regime

High photoluminescence quantum efficiency InGaN multiple quantum well structures emitting at 380nm

article published in 2007

High quantum efficiency InGaN/GaN structures emitting at 540 nm

Hydrostatic-pressure determination of tensile-strainedGaxIn1−xP-(AlyGa1−y)0.52In0.48P quantum-well band offsets

scientific article published on 01 April 1996

Investigation of unintentional indium incorporation into GaN barriers of InGaN/GaN quantum well structures

scholarly article by Fabien C-P Massabuau et al published 19 December 2014 in Physica Status Solidi B

Linewidth dependence of radiative exciton lifetimes in quantum wells

scientific article published on 01 November 1987

Low temperature carrier redistribution dynamics in InGaN/GaN quantum wells

article

Low temperature photoluminescence and cathodoluminescence studies of nonpolar GaN grown using epitaxial lateral overgrowth

Magneto-optical studies of screened excitons in GaAs/AlxGa1-xAs modulation-doped quantum wells

scientific article published on 01 August 1992

Measurement of the direct energy gap ofAl0.5In0.5P: Implications for the band discontinuity atGa1−xInxP/AlyIn1−yP heterojunctions

scientific article published on 01 October 1994

Misfit dislocations in In-rich InGaN/GaN quantum well structures

On the origin of blue-green emission from heteroepitaxial nonpolar a-plane InGaN quantum wells

scientific article published on 26 January 2012

On the triplet state of FA(Mg) centres in calcium oxide

Optical and micro-structural properties of high photoluminescence efficiency InGaN/AlInGaN quantum well structures

Optical and microstructural studies of InGaN∕GaN single-quantum-well structures

article by Darren M Graham et al published 15 May 2005 in Journal of Applied Physics

Optical and structural properties of dislocations in InGaN

Optical detection of magnetic resonance in MgO:Cr3+. I. Octahedral and orthorhombic site symmetries

Optical detection of magnetic resonance in MgO:Cr3+. II. Cr3+ions in tetragonal symmetry sites

Optical nonlinearities in mixed type I-type II GaAs/AlAs multiple quantum wells

scientific article published on 01 June 1992

Optical polarization anisotropy of a-plane GaN/AlGaN multiple quantum well structures grown on r-plane sapphire substrates

Optical properties of GaN/AlGaN quantum wells grown on nonpolar substrates

Optical properties of c-Plane InGaN/GaN single quantum wells as a function of total electric field strength

Optically detected magnetic resonance study of a type-II GaAs/AlAs multiple quantum well

scientific article published on 01 July 1988

Photoluminescence decay time measurements from self-organized InAs/GaAs quantum dots

Photoluminescence studies of cubic GaN epilayers

Polarized photoluminescence excitation spectroscopy of a-plane InGaN/GaN multiple quantum wells grown on r-plane sapphire

Properties of non-polar a-plane GaN/AlGaN quantum wells

Recombination mechanisms in heteroepitaxial non-polar InGaN/GaN quantum wells

Resonant excitation photoluminescence studies of InGaN∕GaN single quantum well structures

Resonant photoluminescence excitation studies of InGaN/GaN single quantum wells

Resonant photoluminescence studies of carrier localisation in c-plane InGaN/GaN quantum well structures.

scientific article published on 20 March 2018

Room temperature PL efficiency of InGaN/GaN quantum well structures with prelayers as a function of number of quantum wells

Strain Seeding of Ge Quantum Dots Grown on Si (001)

Structural, Compositional and Optical Properties of Self-Organised Ge Quantum Dots

article

Structural, electronic, and optical properties ofm-plane InGaN/GaN quantum wells: Insights from experiment and atomistic theory ⬇️

scholarly article in Physical Review B, vol. 92 no. 23, December 2015

Study of efficiency droop and carrier localisation in an InGaN/GaN quantum well structure

scientific article published on 20 June 2011

Subpicosecond real-space charge transfer in type-II GaAs/AlAs superlattices

scientific article published on 01 April 1989

Substrate temperature dependence of the minority carrier lifetime in (AlGa)As/GaAs MQWs grown with As2 and As4

Temperature Dependent Optical Properties of InAs/AlGaAs Quantum Dots

Temperature Dependent Optical Properties of InAs/AlGaAs Quantum Dots

Terahertz cyclotron resonance spectroscopy of an AlGaN/GaN heterostructure using a high-field pulsed magnet and an asynchronous optical sampling technique

The consequences of high injected carrier densities on carrier localization and efficiency droop in InGaN/GaN quantum well structures

The effect of a Mg-doped GaN cap layer on the optical properties of InGaN/AlGaN multiple quantum well structures

The effect of strain field seeding on the epitaxial growth of Ge islands on Si(001)

scholarly article

The effects of Si-doped prelayers on the optical properties of InGaN/GaN single quantum well structures

The effects of varying threading dislocation density on the optical properties of InGaN/GaN quantum wells

The impact of gross well width fluctuations on the efficiency of GaN-based light emitting diodes

article by Rachel Angharad Oliver et al published 30 September 2013 in Applied Physics Letters

The impact of substrate miscut on the microstructure and photoluminescence efficiency of (0001) InGaN quantum wells grown by a two-temperature method

The impact of trench defects in InGaN/GaN light emitting diodes and implications for the “green gap” problem

The microstructure of non-polar a-plane (11 2¯0) InGaN quantum wells

The nature of carrier localisation in polar and nonpolar InGaN/GaN quantum wells

article published in 2016

Theoretical and experimental analysis of the photoluminescence and photoluminescence excitation spectroscopy spectra of m-plane InGaN/GaN quantum wells