(2×4)GaP(001) surface: Atomic structure and optical anisotropy

scholarly article in Physical Review B, vol. 60 no. 4, July 1999

A fast reflectance anisotropy spectrometer for in situ growth monitoring

Atomic structure and composition of the (2×4) reconstruction of InGaP(001)

article

Atomic structure of InP(001)-(2×4): A dimer reconstruction

scholarly article in Physical Review B, vol. 57 no. 23, June 1998

Comparative study of (0001) and $(11\bar{2}2)$ InGaN based light emitting diodes

Comparative study of the GaAs (113), (115), (001), (115) , (113) , and (110) surfaces by atomic force microscopy, low energy electron diffraction, and reflectance anisotropy spectroscopy

Comparison study of N- and In-polar {0001} InN layers grown by MOVPE

Crystal orientation of GaN layers on (1010) m-plane sapphire

Determination of the complex linear electro-optic coefficient of GaAs and InP

article by Markus Pristovsek published 24 June 2010 in Physica Status Solidi B

Development of InN metalorganic vapor phase epitaxy using in-situ spectroscopic ellipsometry

article

Development of semipolar (11-22) LEDs on GaN templates

article

Diffusion of Ga on the GaAs (113) surface in the [11̄0] direction during MOVPE growth

Dynamic study of the surfaces of (001) gallium arsenide in metal-organic vapor-phase epitaxy during arsenic desorption

Effect of heterostructure design on carrier injection and emission characteristics of 295 nm light emitting diodes

Efficiency of arsenic and phosphorus precursors investigated by reflectance anisotropy spectroscopy

Ellipsometric and reflectance-anisotropy measurements on rotating samples

Energetics of Quantum Dot Formation and Relaxation of InGaAs on GaAs(001)

Ga-rich GaAs(001) surfaces observed by STM during high-temperature annealing in MBE

GaP(001) and InP(001): Reflectance anisotropy and surface geometry

article published in 1999

Gallium-rich reconstructions on GaAs(001)

Growth and characterization of manganese-doped InAsP

Growth mechanism of InGaN quantum dots during metalorganic vapor phase epitaxy

Growth mode of InGaN on GaN (0001) in MOVPE

Growth mode transition and relaxation of thin InGaN layers on GaN (0001)

Growth of semipolar (10$ \bar 1\bar 3 $) InN on m -plane sapphire using MOVPE

Growth of strained GaAsSb layers on GaAs (001) by MOVPE

Growth oscillations with monolayer periodicity monitored by ellipsometry during metalorganic vapor phase epitaxy of GaAs(001)

article published in 1995

High aluminium content and high growth rates of AlGaN in a close-coupled showerhead MOVPE reactor

Homoepitaxial growth rate measurement using in situ reflectance anisotropy spectroscopy

In situ characterization of GaAs growth in nitrogen atmosphere during MOVPE: a comparison to hydrogen atmosphere

In situ investigation of GaAs (001) intrinsic carbon p-doping in metal-organic vapour phase epitaxy

In situ scanning tunneling microscopy during metal-organic vapor phase epitaxy

In situ scanning tunneling microscopy of InAs quantum dots on GaAs() during molecular beam epitaxial growth

article published in 2003

In situ scanning tunnelling microscopy during metal-organic vapour phase epitaxy

article

In situ study of GaAs growth mechanisms using tri-methyl gallium and tri-ethyl gallium precursors in metal-organic vapour phase epitaxy

scholarly article by Markus Pristovsek et al published February 2004 in Journal of Crystal Growth

In situ study of low-temperature growth and Mn, Si, Sn doping of GaAs () in molecular beam epitaxy

In situ surface passivation of III–V semiconductors in MOVPE by amorphous As and P layers

In situaccess to the dielectric anisotropy of buried III-V/Si(100) heterointerfaces

scholarly article in Physical Review B, vol. 86 no. 3, July 2012

In-situ Determination of the Carrier Concentration of (001) GaAs by Reflectance Anisotropy Spectroscopy

InN growth and annealing investigations using in-situ spectroscopic ellipsometry

InN growth on sapphire using different nitridation procedures

Indium incorporation efficiency and critical layer thickness of (202¯1) InGaN layers on GaN

Indium nitride quantum dot growth modes in metalorganic vapour phase epitaxy

Influence of a GaN Cap Layer on the Morphology and the Physical Properties of Embedded Self-Organized InN Quantum Dots on GaN(0001) Grown by Metal–Organic Vapour Phase Epitaxy

Influence of group III and group V partial pressures on the size and density of InGaN quantum dots in MOVPE

Influence of the reconstruction of GaAs (001) on the electro-optical bulk properties

article by Markus Pristovsek et al published February 2003 in Journal of Crystal Growth

Insight into the performance of multi-color InGaN/GaN nanorod light emitting diodes.

scientific article

Lateral short range ordering of step bunches in InGaAs/GaAs superlattices

Low defect large area semi-polar (11[Formula: see text]2) GaN grown on patterned (113) silicon

scientific article published on 9 December 2014

MOVPE growth and indium incorporation of polar, semipolar (112‾2) and (202‾1) InGaN

scholarly article by Duc V. Dinh et al published 21 September 2015 in Physica Status Solidi B

MOVPE growth of semipolar AlN on m-plane sapphire

Metalorganic vapor phase epitaxy of InN on GaN using tertiary-butylhydrazine as nitrogen source

Metalorganic vapour phase epitaxial growth on vicinal GaAs (001) surfaces studied by reflectance anisotropy spectroscopy

article published in 1995

Monolithic integration of tricolor micro-LEDs and color mixing investigation by analog and digital dimming

article by Yoann Robin et al published 29 April 2019 in Japanese Journal of Applied Physics

Nitrogen–arsenic exchange processes and investigation of the nitrided GaAs surfaces in MOVPE

Novel Organopalladium Material Formed on a Sulfur-Terminated GaAs(001) Surface

Nucleation and Coalescence of Indium Rich InGaN Layers on Nitridated Sapphire in Metal–Organic Vapor Phase Epitaxy

Optical anisotropies of InP(001) surfaces

Optimizing GaN (112‾2) hetero-epitaxial templates grown on (101‾0) sapphire

Orientation control of GaN and grown on sapphire by metal-organic vapor phase epitaxy

Origin of faceted surface hillocks on semi-polar (112¯2) GaN templates grown on pre-structured sapphire

Photoluminescence Scanning Near-Field Optical Microscopy on III–V Quantum Dots

Properties of InMnP (001) grown by MOVPE

Radiative recombination mechanisms in polar and non-polar InGaN/GaN quantum well LED structures

Real-time calibration of wafer temperature, growth rate and composition by optical in-situ techniques during AlxGa1−xAs growth in MOVPE

article

Real-time monitoring of MOVPE device growth by reflectance anisotropy spectroscopy and related optical techniques

Reconstructions of the GaAs (113) surface

Reflectance anisotropy oscillations during MOCVD and MBE growth of GaAs (001)

Response of the surface dielectric function to dynamic surface modifications: application of reflectance anisotropy spectroscopy and spectroscopic ellipsometry

Ripening of InAs quantum dots on GaAs (001) investigated with in situ scanning tunneling microscopy in metal–organic vapor phase epitaxy

Role of nitridation on polarity and growth of InN by metal–organic vapor phase epitaxy

Scanning-tunneling-microscopy study of InP(001) surfaces prepared by UHV decapping of metal-organic vapor-phase-epitaxy-grown samples

scientific article published on 01 May 1996

Segregation and desorption of antimony in InP (001) in MOVPE

scholarly article by S. Weeke et al published January 2007 in Journal of Crystal Growth

Shape of indium nitride quantum dots and nanostructures grown by metal organic vapour phase epitaxy

Single phase GaN on sapphire grown by metal-organic vapor phase epitaxy

Spectroscopic process sensors in MOVPE device production

Structural analysis by reflectance anisotropy spectroscopy: As and Sb on GaAs(110)

Structural and optical properties of (112̅2) InGaN quantum wells compared to (0001) and (112̅0)

Structural and optical properties of semipolar AlGaN grown on sapphire by metal–organic vapor phase epitaxy

Structure analysis of the Ga-stabilizedGaAs(001)−c(8×2)surface at high temperatures

scholarly article in Physical Review B, vol. 65 no. 23, May 2002

Structure of Ga-stabilized GaAs(0 0 1) surfaces at high temperatures

Structure of InP (001) surfaces prepared by decapping and by ion bombardment and annealing

scholarly article in Physical Review B, vol. 56 no. 4, July 1997

Surface Transitions During InGaN Growth on GaN(0001) in Metal–Organic Vapor Phase Epitaxy

Surface and crystal structure of nitridated sapphire substrates and their effect on polar InN layers

article published in 2014

Surface diffusion and layer morphology of ((112¯2)) GaN grown by metal-organic vapor phase epitaxy

Surface processes before and during growth of GaAs (001)

Surface structure of ordered InGaP(001): The(2×4)reconstruction

scholarly article in Physical Review B, vol. 62 no. 19, November 2000

Surface transition induced island formation on thin strained InGaN layers on GaN (0001) in metal-organic vapour phase epitaxy

The critical thickness of InGaN on (0001)GaN

The impact of the surface on step-bunching and diffusion of Ga on GaAs (001) in metal-organic vapour phase epitaxy

Topography of AlGaN, GaN and InGaN layers grown by metal-organic vapor phase epitaxy

Toward defect-free semi-polar GaN templates on pre-structured sapphire

Understanding indium incorporation of InGaN grown on polar, semi-polar, and non-polar orientation by metal–organic vapor phase epitaxy

scientific article published in 2022

Volmer-Weber growth mode of InN quantum dots on GaN by MOVPE

Wavelength limits for InGaN quantum wells on GaN

article published in 2013

What is red? On the chromaticity of orange-red InGaN/GaN based LEDs

article by Y. Robin et al published 14 November 2018 in Journal of Applied Physics