List of works - Stefan Schulz

A flexible, plane-wave based multiband $${\mathbf{k}\cdot\mathbf{p}}$$ model

A generalized plane-wave formulation of k · p formalism and continuum-elasticity approach to elastic and electronic properties of semiconductor nanostructures

A study of the optical and polarisation properties of InGaN/GaN multiple quantum wells grown on a-plane and m-plane GaN substrates

scientific article

Atomistic analysis of the electronic structure of m -plane InGaN/GaN quantum wells: Carrier localization effects in ground and excited states due to random alloy fluctuations

Atomistic analysis of the impact of alloy and well-width fluctuations on the electronic and optical properties of InGaN/GaN quantum wells ⬇️

scholarly article in Physical Review B, vol. 91 no. 3, January 2015

Atomistic description of wave function localization effects in InxGa1-xN alloys and quantum wells

Band gap bowing and optical polarization switching in Al1−xGaxN alloys

article published in 2015

Built-in field control in alloyedc-plane III-N quantum dots and wells

article published in 2011

Built-in field control in nitride nanostructures operating in the UV

Built-in field reduction in InGaN/GaN quantum dot molecules

Built-in fields in non-polar InxGa1â xN quantum dots

Built-in fields in stacked InGaN/GaN quantum dots

Characterising the degree of polarisation anisotropy in an a -plane GaN film

Color stability, wave function overlap and leakage currents in InGaN-based LED structures: the role of the substrate orientation

Comparison of atomistic and continuum theoretical approaches to determine electronic properties of GaN/AlN quantum dots

scholarly article in Physical Review B, vol. 78 no. 23, December 2008

Comparison of stress and total energy methods for calculation of elastic properties of semiconductors.

scientific article published on 5 December 2012

Composition-Dependent Band Gap and Band-Edge Bowing in AlInN: A Combined Theoretical and Experimental Study

article

Deterministic optical polarisation in nitride quantum dots at thermoelectrically cooled temperatures

scientific article published on 21 September 2017

Development of semipolar (11-22) LEDs on GaN templates

article

Direct generation of linearly polarized single photons with a deterministic axis in quantum dots

Effect of alloy fluctuations on the local polarization in nitride nanostructures

Electronic Structure of Polar and Semipolar (112¯2)-Oriented Nitride Dot-in-a-Well Systems

Electronic and excitonic properties of ultrathin (In,Ga)N layers: the role of alloy and monolayer width fluctuations

scientific article published on 01 October 2020

Electronic and optical properties of nonpolara-plane GaN quantum wells

scholarly article in Physical Review B, vol. 82 no. 12, September 2010

Electronic properties of site-controlled (111)-oriented zinc-blende InGaAs/GaAs quantum dots calculated using a symmetry-adapted k·p Hamiltonian.

scientific article published on 20 December 2013

Electronic states in nitride semiconductor quantum dots: A tight-binding approach

Erratum: Hybrid functional study of the elastic and structural properties of wurtzite and zinc-blende group-III nitrides [Phys. Rev. B86, 014117 (2012)]

scholarly article published in Physical Review B

Excitation-induced energy shifts in the optical gain spectra of InN quantum dots

Excitonic binding energies in non-polar GaN quantum wells

Exploring the Potential of c-Plane Indium Gallium Nitride Quantum Dots for Twin-Photon Emission

scientific article published on 03 December 2019

Ground state switching in InGaN/GaN quantum dot molecules

Hybrid functional study of the elastic and structural properties of wurtzite and zinc-blende group-III nitrides

scholarly article in Physical Review B, vol. 86 no. 1, July 2012

Impact of Random Alloy Fluctuations on inter-well transport in InGaN/GaN multi-quantum well systems: An atomistic non-equilibrium Green's function study

scientific article published on 25 September 2020

Impact of cation-based localized electronic states on the conduction and valence band structure of Al1−xInxN alloys

Importance of satisfying thermodynamic consistency in optoelectronic device simulations for high carrier densities

scientific article published in 2023

Influence of symmetry and Coulomb correlation effects on the optical properties of nitride quantum dots

scholarly article in Physical Review B, vol. 76 no. 7, August 2007

Long wavelength transverse magnetic polarized absorption in 1.3 µm InAs/InGaAs dots-in-a-well type active regions

Microscopic tight-binding description for electronic and optical properties of InN/GaN quantum dots

Multiband description of the optical properties of zincblende nitride quantum dots

scholarly article in Physical Review B, vol. 80 no. 16, October 2009

Multiscale simulations of uni-polar hole transport in (In,Ga)N quantum well systems

scientific article published in 2022

Nitride Single Photon Sources

Non-polar InxGa1−xN/GaN quantum dots: impact of dot size and shape anisotropies on excitonic and biexcitonic properties

Nonpolar GaN quantum dots: Impact of dot size and shape on the electron and hole wave function overlap

Optical properties of self-organized wurtzite InN∕GaN quantum dots: A combined atomistic tight-binding and full configuration interaction calculation

Optical spectra of nitride quantum-dot systems: From tight-binding states to many-body effects

Origin of nonlinear piezoelectricity in III-V semiconductors: Internal strain and bond ionicity from hybrid-functional density functional theory ⬇️

scholarly article in Physical Review B, vol. 91 no. 7, February 2015

Piezoelectric properties of zinc blende quantum dots

Plane-Wave Approaches to the Electronic Structure of Semiconductor Nanostructures

Polar, semi- and non-polar nitride-based quantum dots: influence of substrate orientation and material parameter sets on electronic and optical properties

Polarization fields in nitride-based quantum dots grown on nonpolar substrates

scholarly article in Physical Review B, vol. 79 no. 8, February 2009

Polarization matching design of InGaN-based semi-polar quantum wells—A case study of (112¯2) orientation

Polarized photoluminescence excitation spectroscopy of a-plane InGaN/GaN multiple quantum wells grown on r-plane sapphire

Prediction of strong ground state electron and hole wave function spatial overlap in nonpolar GaN/AlN quantum dots

Random alloy fluctuations and structural inhomogeneities in c-plane InxGa1−xN quantum wells: theory of ground and excited electron and hole states

scholarly article in RSC Advances, vol. 6 no. 69, 2016

Resonant photoluminescence studies of carrier localisation in c-plane InGaN/GaN quantum well structures

scientific article published on 20 March 2018

Semiconductor nanocrystals and embedded quantum dots: Electronic and optical properties

Spin-orbit coupling and crystal-field splitting in the electronic and optical properties of nitride quantum dots with a wurtzite crystal structure

Strongly nonparabolic variation of the band gap in InxAl1−xN with low indium content

Structural, electronic, and optical properties ofm-plane InGaN/GaN quantum wells: Insights from experiment and atomistic theory ⬇️

scholarly article in Physical Review B, vol. 92 no. 23, December 2015

Symmetry-adapted calculations of strain and polarization fields in (111)-oriented zinc-blende quantum dots

scholarly article in Physical Review B, vol. 84 no. 12, September 2011

The atomic structure of polar and non-polar InGaN quantum wells and the green gap problem

scientific article published on 3 February 2017

The nature of carrier localisation in polar and nonpolar InGaN/GaN quantum wells

article published in 2016

Theoretical analysis of influence of random alloy fluctuations on the optoelectronic properties of site-controlled (111)-oriented InGaAs/GaAs quantum dots ⬇️

scholarly article in Physical Review B, vol. 94 no. 12, September 2016

Theoretical and experimental analysis of radiative recombination lifetimes in nonpolar InGaN/GaN quantum dots

Theoretical and experimental analysis of the photoluminescence and photoluminescence excitation spectroscopy spectra of m-plane InGaN/GaN quantum wells

Theoretical study of the impact of alloy disorder on carrier transport and recombination processes in deep UV (Al,Ga)N light emitters