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List of works by Tongtong Zhu

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Microstructural origins of localization in InGaN quantum wells

Indium clustering in a-plane InGaN quantum wells as evidenced by atom probe tomography

scholarly article by Fengzai Tang et al published 16 February 2015 in Applied Physics Letters
Low threshold, room-temperature microdisk lasers in the blue spectral range

article published in 2013
Non-polar (11-20) InGaN quantum dots with short exciton lifetimes grown by metal-organic vapor phase epitaxy

article
Distinctive signature of indium gallium nitride quantum dot lasing in microdisk cavities

scientific article
Correlations between the morphology and emission properties of trench defects in InGaN/GaN quantum wells

article published in 2013
Characterization of unintentional doping in nonpolar GaN

High temperature stability in non-polar (11$ \bar 2 $0) InGaN quantum dots: Exciton and biexciton dynamics

article
Ultrafast, Polarized, Single-Photon Emission from m-Plane InGaN Quantum Dots on GaN Nanowires

scientific article published on 5 December 2016
Growth and optical characterisation of multilayers of InGaN quantum dots

article
Optical studies of non-polar m-plane (11¯00) InGaN/GaN multi-quantum wells grown on freestanding bulk GaN

Microstructural, optical, and electrical characterization of semipolar (112¯2) gallium nitride grown by epitaxial lateral overgrowth

scholarly article by Tongtong Zhu et al published 15 October 2010 in Journal of Applied Physics
Origins of Spectral Diffusion in the Micro-Photoluminescence of Single InGaN Quantum Dots

article
Observations of Rabi oscillations in a non-polar InGaN quantum dot

article
The microstructure of non-polar a-plane (11 2¯0) InGaN quantum wells

Unintentional doping in GaN

scientific article published on June 8, 2012
Properties of trench defects in InGaN/GaN quantum well structures

Nitride quantum light sources

article by Tongtong Zhu & Rachel Angharad Oliver published 1 February 2016 in Europhysics Letters
Growth of non-polar (11-20) InGaN quantum dots by metal organic vapour phase epitaxy using a two temperature method

article published in 2014
Polarisation-controlled single photon emission at high temperatures from InGaN quantum dots.

scientific article
Nanoscopic insights into the effect of silicon on core-shell InGaN/GaN nanorods: Luminescence, composition, and structure

article
Effect of Threading Dislocations on the Quality Factor of InGaN/GaN Microdisk Cavities

scientific article
An investigation into defect reduction techniques for growth of non-polar GaN on sapphire

article
Evaluation of growth methods for the heteroepitaxy of non-polar ( 11 2 ¯ 0 ) GAN on sapphire by MOVPE

Ultra-low threshold gallium nitride photonic crystal nanobeam laser

scholarly article by Nan Niu et al published 8 June 2015 in Applied Physics Letters
Non-polar InGaN quantum dot emission with crystal-axis oriented linear polarization

Surface morphology of homoepitaxial c-plane GaN: Hillocks and ridges

High-temperature performance of non-polar (11-20) InGaN quantum dots grown by a quasi-two-temperature method

article
Structural and optical properties of (112̅2) InGaN quantum wells compared to (0001) and (112̅0)

Radiative recombination mechanisms in polar and non-polar InGaN/GaN quantum well LED structures

Comparative studies of efficiency droop in polar and non-polar InGaN quantum wells

article published in 2016
Improvement of single photon emission from InGaN QDs embedded in porous micropillars

Non-polar (11$ \bar 2 $0) InGaN quantum dots with short exciton lifetimes grown by metal-organic vapour phase epitaxy

article
Encapsulation of methylammonium lead bromide perovskite in nanoporous GaN

scientific article published in February 2019
The impact of ScOxNyinterlayers on unintentional doping and threading dislocations in GaN

The effects of annealing on non-polar (112¯0) a-plane GaN films

Growth of non-polar InGaN quantum dots with an underlying AlN/GaN distributed Bragg reflector by metal-organic vapour phase epitaxy

Defect Reduction in Semi-Polar (112̄2) Gallium Nitride Grown Using Epitaxial Lateral Overgrowth

Low defect large area semi-polar (11[Formula: see text]2) GaN grown on patterned (113) silicon

scientific article published on 9 December 2014
SCM and SIMS investigations of unintentional doping in III-nitrides

article published in 2015
Theoretical and experimental analysis of radiative recombination lifetimes in nonpolar InGaN/GaN quantum dots

Self-assembled Multilayers of Silica Nanospheres for Defect Reduction in Non- and Semipolar Gallium Nitride Epitaxial Layers

scientific article
Microstructural dependency of optical properties of m-plane InGaN multiple quantum wells grown on 2° misoriented bulk GaN substrates

Direct generation of linearly polarized single photons with a deterministic axis in quantum dots

Highly polarized electrically driven single-photon emission from a non-polar InGaN quantum dot

Local carrier recombination and associated dynamics in m-plane InGaN/GaN quantum wells probed by picosecond cathodoluminescence

On-Chip Thermal Insulation Using Porous GaN

scientific article published on 10 December 2018
Spectral diffusion time scales in InGaN/GaN quantum dots

Dislocations as channels for the fabrication of sub-surface porous GaN by electrochemical etching

Terahertz electromodulation spectroscopy of electron transport in GaN

scientific article published on 2 March 2015

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