List of works - Christian Lavoie

An off-normal fibre-like texture in thin films on single-crystal substrates

scientific article published in Nature

Atomic layer deposited ultrathin metal nitride barrier layers for ruthenium interconnect applications

Axiotaxy of CoSi2 thin films on Si(100) substrates and the effects of Ti alloying

Challenges of nickel silicidation in CMOS technologies

scholarly article by Nicolas Breil et al published April 2015 in Microelectronic Engineering

Compositional dependence of the optical conductivity of Ni1−xPtx alloys (0<x<0.25) determined by spectroscopic ellipsometry

article

Diffuse optical reflectivity measurements on GaAs during molecular‐beam epitaxy processing

Effects of temperature dependent pre-amorphization implantation on NiPt silicide formation and thermal stability on Si(100)

article published in 2013

Epitaxy of Ultrathin NiSi2 Films with Predetermined Thickness

Erratum: “Stress determination in nickel monosilicide films using x-ray diffraction” [J. Appl. Phys. 106, 073521 (2009)]

scholarly article by Conal E. Murray et al published November 2011 in Journal of Applied Physics

Exploitation of a self-limiting process for reproducible formation of ultrathin Ni1−xPtx silicide films

article by Zhen Zhang et al published 20 December 2010 in Applied Physics Letters

Extendibility of NiPt Silicide Contacts for CMOS Technology Demonstrated to the 22-nm Node

Extendibility of NiPt silicide to the 22-nm node CMOS technology

Formation and microstructure of thin Ti silicide films for advanced technologies

Formation of C54 TiSi2: Effects of niobium additions on the apparent activation energy

article

Formation of nickel germanides from Ni layers with thickness below 10 nm

scholarly article by Lukas Jablonka et al published March 2017 in Journal of vacuum science and technology. B, Nanotechnology & microelectronics : materials, processing, measurement, & phenomena : JVST B

Gas cluster ion beam assisted NiPt germano-silicide formation on SiGe

Implementation of Robust Nickel Alloy Salicide Process for High-Performance 65nm SOI CMOS Manufacturing

scholarly article published 2007

Influence of Alloying Elements on the Formation and Stability of NiSi

Influence of Pt addition on the texture of NiSi on Si(001)

article

Material and Integration Issues for Rare Earth Silicides as Gate and Diffusion Contacts in Advanced CMOS Technologies

MnP nanoclusters embedded in GaP epitaxial films grown by organometallic vapor-phase epitaxy: A reciprocal space mapping and transmission electron microscopy study

article

Morphological stability and specific resistivity of sub-10 nm silicide films of Ni1−xPtx on Si substrate

Multi-technique x-ray and optical characterization of crystalline phase, texture, and electronic structure of atomic layer deposited Hf1−xZrxO2 gate dielectrics deposited by a cyclical deposition and annealing scheme

Ni–Pt silicide formation through Ti mediating layers

Optical conductivity of Ni1 −xPtxalloys (0<x<0.25) from 0.76 to 6.6 eV

Optical conductivity of Ni1−xPtxSi monosilicides (0 < x < 0.3) from spectroscopic ellipsometry

Relationship between surface morphology and strain relaxation during growth of InGaAs strained layers

article published in 1995

Silicides for 22nm and Beyond

Stress determination in nickel monosilicide films using x-ray diffraction

scholarly article by Conal E. Murray et al published October 2009 in Journal of Applied Physics

Texture Effects in Solid-State Reactions of Thin Films

Three dimensional reciprocal space measurement by x-ray diffraction using linear and area detectors: Applications to texture and defects determination in oriented thin films and nanoprecipitates

article published in 2013

List of works by Christian Lavoie

An off-normal fibre-like texture in thin films on single-crystal substrates

Atomic layer deposited ultrathin metal nitride barrier layers for ruthenium interconnect applications

Axiotaxy of CoSi2 thin films on Si(100) substrates and the effects of Ti alloying

Challenges of nickel silicidation in CMOS technologies

Compositional dependence of the optical conductivity of Ni1−xPtx alloys (0<x<0.25) determined by spectroscopic ellipsometry

Diffuse optical reflectivity measurements on GaAs during molecular‐beam epitaxy processing

Effects of temperature dependent pre-amorphization implantation on NiPt silicide formation and thermal stability on Si(100)

Epitaxy of Ultrathin NiSi2 Films with Predetermined Thickness

Erratum: “Stress determination in nickel monosilicide films using x-ray diffraction” [J. Appl. Phys. 106, 073521 (2009)]

Exploitation of a self-limiting process for reproducible formation of ultrathin Ni1−xPtx silicide films

Extendibility of NiPt Silicide Contacts for CMOS Technology Demonstrated to the 22-nm Node

Extendibility of NiPt silicide to the 22-nm node CMOS technology

Formation and microstructure of thin Ti silicide films for advanced technologies

Formation of C54 TiSi2: Effects of niobium additions on the apparent activation energy

Formation of nickel germanides from Ni layers with thickness below 10 nm

Gas cluster ion beam assisted NiPt germano-silicide formation on SiGe

Implementation of Robust Nickel Alloy Salicide Process for High-Performance 65nm SOI CMOS Manufacturing

Influence of Alloying Elements on the Formation and Stability of NiSi

Influence of Pt addition on the texture of NiSi on Si(001)

Material and Integration Issues for Rare Earth Silicides as Gate and Diffusion Contacts in Advanced CMOS Technologies

MnP nanoclusters embedded in GaP epitaxial films grown by organometallic vapor-phase epitaxy: A reciprocal space mapping and transmission electron microscopy study

Morphological stability and specific resistivity of sub-10 nm silicide films of Ni1−xPtx on Si substrate

Multi-technique x-ray and optical characterization of crystalline phase, texture, and electronic structure of atomic layer deposited Hf1−xZrxO2 gate dielectrics deposited by a cyclical deposition and annealing scheme

Ni–Pt silicide formation through Ti mediating layers

Optical conductivity of Ni1 −xPtxalloys (0<x<0.25) from 0.76 to 6.6 eV

Optical conductivity of Ni1−xPtxSi monosilicides (0 < x < 0.3) from spectroscopic ellipsometry

Relationship between surface morphology and strain relaxation during growth of InGaAs strained layers

Silicides for 22nm and Beyond

Stress determination in nickel monosilicide films using x-ray diffraction

Texture Effects in Solid-State Reactions of Thin Films

Three dimensional reciprocal space measurement by x-ray diffraction using linear and area detectors: Applications to texture and defects determination in oriented thin films and nanoprecipitates

Ultra Low Contact Resistivities for CMOS Beyond 10-nm Node