(Invited) First-Principles Investigation of High-k Dielectrics for Nonvolatile Memories

(Invited) Hafnium Oxide Based CMOS Compatible Ferroelectric Materials

scholarly article by U. Schroeder et al published 15 March 2013 in ECS transactions

(Invited) III-V/Oxide Interfaces Investigated with Synchrotron Radiation Photoemission Spectroscopy

(Invited) Introducing Lanthanide Aluminates as Dielectrics for Nonvolatile Memory Applications: A Material Scientist's View

(Invited) Rare Earth Materials for Semiconductor Applications

A Dy 2 O 3 -capped HfO 2 Dielectric and TaC x -based Metals Enabling Low-V t Single-Metal-Single-Dielectric Gate Stack

A GHz Operating CMOS Compatible ScAlN Based SAW Resonator Used for Surface Acoustic Waves/Spin Waves Coupling

scientific article published in 2022

A comparative study of the microstructure-dielectric properties of crystalline SrTiO3 ALD films obtained via seed layer approach

A majority gate with chiral magnetic solitons

scientific article published on 06 August 2018

A-VMCO: A novel forming-free, self-rectifying, analog memory cell with low-current operation, nonfilamentary switching and excellent variability

ALD La-Based Oxides for Vt-Tuning in High-K/Metal Gate Stacks

ALD on High Mobility Channels: Engineering the Proper Gate Stack Passivation

article

AVD and MOCVD TaCN-based Films for Gate Metal Applications on High k Gate Dielectrics

Achieving Low-$V_{T}$ Ni-FUSI CMOS by Ultra-Thin $\hbox{Dy}_{2}\hbox{O}_{3}$ Capping of Hafnium Silicate Dielectrics

scholarly article by A. Veloso et al published November 2007 in IEEE Electron Device Letters

Achieving low V T Ni-FUSI CMOS via lanthanide incorporation in the gate stack

Achieving low-VT Ni-FUSI CMOS via lanthanide incorporation in the gate stack

Advanced Interconnects: Materials, Processing, and Reliability

Advanced PBTI reliability with 0.69nm EOT GdHfO gate dielectric

Advanced a-VMCO resistive switching memory through inner interface engineering with wide (>102) on/off window, tunable μA-range switching current and excellent variability

Advances in Magnetics Roadmap on Spin-Wave Computing

All electrical propagating spin wave spectroscopy with broadband wavevector capability ⬇️

Alternative channel materials for MOS devices

Alternative high-k dielectrics for semiconductor applications

Alternative metals for advanced interconnects

An X-ray photoelectron spectroscopy study of strontium-titanate-based high-k film stacks

scholarly article by L. Sygellou et al published February 2012 in Microelectronic Engineering

Analytical techniques for precise characterization of nanomaterials

Anomalous diffraction in grazing incidence to study the strain induced by GaN quantum dots stacked in an AlN multilayer

Anomalous positive-bias temperature instability of high-κ/metal gate nMOSFET devices with Dy 2 O 3 capping

article

Aqueous Chemical Solution Deposition

article by S. Van Elshocht et al published 2007 in Electrochemical and Solid-State Letters

Aqueous chemical solution deposition of ultrathin lanthanide oxide dielectric films

article

Aqueous solution–gel preparation of ultrathin ZrO2 films for gate dielectric application

Atomic Layer Deposition of Gadolinium Aluminate using Gd(iPrCp)3, TMA, and O3 or H2O

Atomic Layer Deposition of Gd-Doped HfO[sub 2] Thin Films

Atomic Layer Deposition of Ruthenium Thin Films from (Ethylbenzyl) (1-Ethyl-1,4-cyclohexadienyl) Ru: Process Characteristics, Surface Chemistry, and Film Properties

Atomic Layer Deposition of Ruthenium with TiN Interface for Sub-10 nm Advanced Interconnects beyond Copper

scientific article published on 6 September 2016

Atomic Layer Deposition of Tantalum Oxide and Tantalum Silicate from Chloride Precursors

scholarly article by Christoph Adelmann et al published 25 July 2012 in Chemical Vapor Deposition

Atomic Layer Epitaxy of Hexagonal and Cubic GaN Nanostructures

Atomic layer deposition of tantalum oxide and tantalum silicate from TaCl5, SiCl4, and O3: growth behaviour and film characteristics

scholarly article by Jeong Hwan Han et al published 2013 in Journal of Materials Chemistry C

Atomic-Layer Deposition of Lutetium Aluminate Thin Films for Non-Volatile Memory Applications

Atomic-layer epitaxy of GaN quantum wells and quantum dots on (0001) AlN

Atomic-layer-deposited tantalum silicate as a gate dielectric for III–V MOS devices

scholarly article by Christoph Adelmann et al published July 2011 in Microelectronic Engineering

Band alignment and electron traps in Y2O3 layers on (100)Si

Capacitance-Voltage (CV) Characterization of GaAs-Oxide Interfaces

Capacitance–Voltage Characterization of GaAs–Oxide Interfaces

Capping-metal gate integration technology for multiple-V T CMOS in MuGFETs

Charge instability of atomic-layer deposited TaSiOx insulators on Si, InP, and In0.53Ga0.47As

Compositional depth profiling of TaCN thin films

article

Controlling the Morphology of GaN Layers Grown on AlN in Ga Self-Surfactant Conditions: from Quantum Wells to Quantum Dots

Demonstration of Low $V_{t}$ Ni-FUSI N-MOSFETs With SiON Dielectrics by Using a $\hbox{Dy}_{2}\hbox{O}_{3}$ Cap Layer

Demonstration of Metal-Gated Low $V_{t}$ n-MOSFETs Using a Poly- $\hbox{Si/TaN/Dy}_{2}\hbox{O}_{3}/\hbox{SiON}$ Gate Stack With a Scaled EOT Value

Development of ALD HfZrO

Development of ALD HfZrO[sub x] with TDEAH/TDEAZ and H[sub 2]O

Dielectric properties of dysprosium- and scandium-doped hafnium dioxide thin films

scholarly article by Christoph Adelmann et al published 15 October 2007 in Applied Physics Letters

Direct comparison of recombination dynamics in cubic and hexagonal GaN/AlN quantum dots

scholarly article in Physical Review B, vol. 68 no. 3, July 2003

DyScHfOx as High-κ Gate Dielectrics: Structural and Electrical Properties

Dynamically stable gallium surface coverages during plasma-assisted molecular-beam epitaxy of (0001) GaN

scholarly article by Christoph Adelmann et al published 2002 in Journal of Applied Physics

EUV lithography imaging using novel pellicle membranes

Effects of doping profile and post-growth annealing on spin injection from Fe into (Al,Ga)As heterostructures

Electrical Properties of Low-$V_{T}$ Metal-Gated n-MOSFETs Using $\hbox{La}_{2}\hbox{O}_{3}/\hbox{SiO}_{x}$ as Interfacial Layer Between HfLaO High-$\kappa$ Dielectrics and Si Channel

Electrical characterization of InGaAs ultra-shallow junctions

article by Dirch H. Petersen et al published January 2010 in Journal of vacuum science and technology. B, Nanotechnology & microelectronics : materials, processing, measurement, & phenomena : JVST B

Electrical detection of spin accumulation at a ferromagnet-semiconductor interface.

scientific article

Electrical detection of spin accumulation in ferromagnet-semiconductor devices

Electrical detection of spin transport in lateral ferromagnet–semiconductor devices

Electron spin dynamics and hyperfine interactions inFe∕Al0.1Ga0.9As∕GaAsspin injection heterostructures

scholarly article in Physical Review B, vol. 72 no. 15, October 2005

Engineering of Hf 1−x Al x O y amorphous dielectrics for high-performance RRAM applications

Epitaxial Growth and Characterization of Single Crystal Ferromagnetic Shape Memory Co2NiGa Films

Epitaxial Growth of GaN, AlN and InN: 2D/3D Transition and Surfactant Effects

Equivalent Oxide Thickness Reduction for High-k Gate Stacks by Optimized Rare-Earth Silicate Reactions

Exchange-driven Magnetic Logic

scientific article published on 22 September 2017

Experimental Realization of a Passive Gigahertz Frequency‐Division Demultiplexer for Magnonic Logic Networks

scientific article published in April 2020

Experimental prototype of a spin-wave majority gate ⬇️

Experimental validation of electromigration by low frequency noise measurement for advanced copper interconnects application

Exploration of rare earth materials for future interpoly dielectric replacement in Flash memory devices

Exploring alternative metals to Cu and W for interconnects: An ab initio insight

Extreme Scaled Gate Dielectrics By Using ALD HfO

Flexible and robust capping-metal gate integration technology enabling multiple-VT CMOS in MuGFETs

Fully CMOS BEOL compatible HfO 2 RRAM cell, with low (μA) program current, strong retention and high scalability, using an optimized plasma enhanced atomic layer deposition (PEALD) process for TiN electrode

GaAs clean up studied with synchrotron radiation photoemission

GaN islanding by spontaneous rearrangement of a strained two-dimensional layer on (0001) AlN

GaN quantum dots by molecular beam epitaxy

Ge and III/V devices for advanced CMOS

Graphene oxide monolayers as atomically thin seeding layers for atomic layer deposition of metal oxides

scientific article published on 03 June 2015

Growth and Optical Characterization of InGaN Quantum Dots Resulting from a 2D–3D Transition

article published in 1999

Growth and characterisation of self-assembled cubic GaN quantum dots

Growth and optical properties of GaN/AlN quantum wells

Growth evolution and characterization of ultra-thin CoGe2 films synthesized via a catalytic solid–vapour reaction technique

Growth of Dysprosium-, Scandium-, and Hafnium-based Third Generation High-κ Dielectrics by Atomic Vapor Deposition

scholarly article by Christoph Adelmann et al published October 2007 in Chemical Vapor Deposition

Hafnium Aluminates Deposited by Atomic Layer Deposition: Structural Characterization by X-ray Spectroscopy

scholarly article by D. R. Huanca et al published 30 August 2012 in ECS transactions

Hafnium Oxide Based CMOS Compatible Ferroelectric Materials

scholarly article by U. Schroeder et al published 2013 in ECS Journal of Solid State Science and Technology

High-Performance Metal-Insulator-Metal Tunnel Diode Selectors

High-drive current (>1MA/cm 2 ) and highly nonlinear (>10 3 ) TiN/amorphous-Silicon/TiN scalable bidirectional selector with excellent reliability and its variability impact on the 1S1R array performance

High-k Dielectrics and Metal Gates for Future Generation Memory Devices

High-k dielectrics for future generation memory devices (Invited Paper)

article

High-k/ metal-gate stack work-function tuning by rare-earth capping layers: Interface dipole or bulk charge?

Hydrogen-Induced Resistive Switching in TiN/ALD $ \hbox{HfO}_{2}$/PEALD TiN RRAM Device

Identification of the ferroelectric switching process and dopant-dependent switching properties in orthorhombic HfO2: A first principles insight

Imaging Spin Transport in Lateral Ferromagnet/Semiconductor Structures

scientific article published on 01 September 2005

Impact of Process Optimizations on the Electrical Performance of High-k Layers Deposited by Aqueous Chemical Solution Deposition

article

Impact of different dopants on the switching properties of ferroelectric hafniumoxide

Impact of thermal treatment upon morphology and crystallinity of strontium titanate films deposited by atomic layer deposition

Implementing cubic-phase HfO 2 with κ-value ∼ 30 in low-V T replacement gate pMOS devices for improved EOT-Scaling and reliability

Incorporation kinetics of indium in indium gallium nitride at low temperature

scholarly article by D. F. Storm et al published 10 September 2001 in Applied Physics Letters

Indium incorporation during the growth of InGaN by molecular-beam epitaxy studied by reflection high-energy electron diffraction intensity oscillations

article

Insights into Ni-filament formation in unipolar-switching Ni/HfO2/TiN resistive random access memory device

Interdiffusion and crystallization in HfO2/Al2O3 superlattices

Interface stability in advanced high-κ-metal-gate stacks

Introducing the EUV CNT pellicle

Investigation of rare-earth aluminates as alternative trapping materials in Flash memories

Key sub 1nm EOT CMOS enabler by comprehensive PMOS design

Lanthanide Aluminates as Dielectrics for Non-Volatile Memory Applications: Material Aspects

Large-area, catalyst-free heteroepitaxy of InAs nanowires on Si by MOVPE

Lattice dynamics of a strained GaN–AlN quantum well structure

article

Low Temperature Compatible Hafnium Oxide Based Ferroelectrics

scholarly article by M. Hoffmann et al published 19 May 2015 in Ferroelectrics

Low V T CMOS using doped Hf-based oxides, TaC-based Metals and Laser-only Anneal

Low V t Ni-FUSI CMOS Technology using a DyO cap layer with either single or dual Ni-phases

Low VT metal-gate/high-k nMOSFETs — PBTI dependence and V T Tune-ability on La/Dy-capping layer locations and Laser annealing conditions

Low temperature chemical vapour synthesis of Cu3Ge thin films for interconnect applications

MBE Growth of GaN Films in Presence of Surfactants: The Effect of Mg and Si

Mechanism of Modification of Fluorocarbon Polymer by Ultraviolet Irradiation in Oxygen Atmosphere

Medium energy ion scattering for the high depth resolution characterisation of high-k dielectric layers of nanometer thickness

article published in 2013

Metal Gate Technology using a Dy 2 O 3 Dielectric Cap Approach for multiple-V T in NMOS FinFETs

Metal-Insulator Transition in ALD VO2Ultrathin Films and Nanoparticles: Morphological Control

Metallorganic Chemical Vapor Deposition of Dysprosium Scandate High-k Layers Using mmp-Type Precursors

Micromagnetic simulations of magnetoelastic spin wave excitation in scaled magnetic waveguides

Modified Stranski-Krastanov Growth in Stacked Layers of Self-Assembled Cubic GaN/AlN Quantum Dots

Molecular beam epitaxy of GaN, AlN, InN and related alloys: from two- to three-dimensional growth mode

Multiple-Vt FinFET devices through La 2 O 3 dielectric capping

Nanoscale solid-state quantum computing.

scientific article published in July 2003

Nanosession: Ferroelectrics - New and Unusal Material Systems

NiO Thin Films Synthesized by Atomic Layer Deposition using Ni(dmamb)2 and Ozone as Precursors

Nitrogen Profile and Dielectric Cap Layer (Al2O3, Dy2O3, La2O3) Engineering on Hf-Silicate

Novel membrane solutions for the EUV pellicle: better or not?

Novel process to pattern selectively dual dielectric capping layers using soft-mask only

scholarly article published June 2008

Nucleation and growth ofGaN∕AlNquantum dots

scholarly article in Physical Review B, vol. 70 no. 12, September 2004

On the Process and Material Sensitivities for High-k Based Dielectrics

On the driving forces for the vertical alignment in nitride quantum dot multilayers

article published in 2003

On the scalability of doped hafnia thin films

On-chip interconnect trends, challenges and solutions: How to keep RC and reliability under control

Opportunities and challenges for spintronics in the microelectronics industry

Optical and electrical spin injection and spin transport in hybrid Fe/GaAs devices

Optimization of the crystallization phase of Rare-Earth aluminates For blocking dielectric application in TANOS type flash memories

Overview of spin-based majority gates and interconnect implications

Ozone-Based Atomic Layer Deposition of Gd2O3from Tris(isopropyl-cyclopentadienyl)gadolinium: Growth Characteristics and Surface Chemistry

Phase Formation and Morphology of Nickel Silicide Thin Films Synthesized by Catalyzed Chemical Vapor Reaction of Nickel with Silane

scholarly article by Antony Premkumar Peter et al published 22 December 2014 in Chemistry of Materials

Phase formation in the thin film Fe∕GaAs system

Physical Characterization of High-

Physical Characterization of the Metal/High-k Layer Interaction upon Annealing

Plastic strain relaxation of nitride heterostructures

Process study of gadolinium aluminate atomic layer deposition fromthegadolinium tris-di-isopropylacetamidinate precursor

Properties and performance of EUVL pellicle membranes

Properties of Ultrathin High Permittivity (Nb[sub 1−x]Ta[sub x])[sub 2]O[sub 5] Films Prepared by Aqueous Chemical Solution Deposition

article

Rare-earth aluminates as a charge trapping materials for NAND flash memories: Integration and electrical evaluation

Reaction Chemistry during the Atomic Layer Deposition of Sc2O3 and Gd2O3 from Sc(MeCp)3, Gd(iPrCp)3, and H2O

Recent progress in growth and physics of GaN/AlN quantum dots

Reconfigurable submicrometer spin-wave majority gate with electrical transducers

scientific article published on 18 December 2020

Replacing SiO2 - Material and Processing Aspects of New Dielectrics

Roughness evolution during the atomic layer deposition of metal oxides

Ruthenium metallization for advanced interconnects

Sacrificial Self-Assembled Monolayers for the Passivation of GaAs (100) Surfaces and Interfaces

Scaled X-bar TiN/HfO2/TiN RRAM cells processed with optimized plasma enhanced atomic layer deposition (PEALD) for TiN electrode

Screening of High-k Layers in MIS and MIM Capacitors Using Aqueous Chemical Solution Deposition

Second-harmonic generation as characterization tool for Ge/high-k dielectric interfaces

Seed Layer and Multistack Approaches to Reduce Leakage in SrTiO3-Based Metal–Insulator–Metal Capacitors Using TiN Bottom Electrode

Selective chemical vapor synthesis of Cu3Ge: Process optimization and film properties

Shape memory and ferromagnetic shape memory effects in single-crystal Ni2MnGa thin films

Silicate formation and thermal stability of ternary rare earth oxides as high-k dielectrics

Spin Wave Threshold Logic Gates

scientific article published on 25 January 2024

Spin injection across the Fe/GaAs interface: Role of interfacial ordering

scholarly article in Physical Review B, vol. 80 no. 20, November 2009

Spin injection and relaxation in ferromagnet-semiconductor heterostructures

scholarly article in Physical Review B, vol. 71 no. 12, March 2005

Spin injection from perpendicular magnetized ferromagnetic δ-MnGa into (Al,Ga)As heterostructures

Spin injection from the Heusler alloy Co2MnGe into Al0.1Ga0.9As∕GaAs heterostructures

Spin waves for interconnect applications

Spintronic majority gates

Stabilization of ambient sensitive atomic layer deposited lanthanum aluminates by annealing and in situ capping

Stabilizing the ferroelectric phase in doped hafnium oxide

scholarly article by M. Hoffmann et al published 21 August 2015 in Journal of Applied Physics

Strain enhanced low-V T CMOS featuring La/Al-doped HfSiO/TaC and 10ps invertor delay

Strontium doped hafnium oxide thin films: Wide process window for ferroelectric memories

scholarly article published September 2013

Strontium niobate high-k dielectrics: Film deposition and material properties

Structure and ordering of GaN quantum dot multilayers

Study of InP Surfaces after Wet Chemical Treatments

Study of InP Surfaces after Wet Chemical Treatments

Study of interfacial reactions and phase stabilization of mixed Sc, Dy, Hf high-k oxides by attenuated total reflectance infrared spectroscopy

Suppression of nuclear polarization near the surface of optically pumped GaAs

scholarly article in Physical Review B, vol. 76 no. 24, December 2007

Surface Chemistry and Interface Formation during the Atomic Layer Deposition of Alumina from Trimethylaluminum and Water on Indium Phosphide

article published in 2013

Surface chemistry and Fermi level movement during the self-cleaning of GaAs by trimethyl-aluminum

scholarly article by Massimo Tallarida et al published 25 July 2011 in Applied Physics Letters

Switching by Ni Filaments in a HfO2 Matrix: A New Pathway to Improved Unipolar Switching RRAM

The Impact of Stacked Cap Layers on Effective Work Function With HfSiON and SiON Gate Dielectrics

The depolarization near-field scanning optical microscope: comparison of experiment and theory.

scientific article published in May 1999

The unexpected effects of crystallization on Ta2O5 as studied by HRTEM and C-AFM

Thermal stability of dysprosium scandate thin films

Thermally stable high effective work function TaCN thin films for metal gate electrode applications

Thickness dependence of the resistivity of platinum-group metal thin films

Thin-Silicon Injector (TSI): An All-Silicon Engineered Barrier, Highly Nonlinear Selector for High Density Resistive RAM Applications

TiN/STO/TiN MIMcaps nanolayers on silicon characterized by SIMS and AFM

TiNx/HfO2 interface dipole induced by oxygen scavenging

Time-Resolved Photoluminescence Studies of Cubic and Hexagonal GaN Quantum Dots

Towards barrier height modulation in HfO2/TiN by oxygen scavenging – Dielectric defects or metal induced gap states?

Transistor threshold voltage modulation by Dy2O3 rare-earth oxide capping: The role of bulk dielectrics charge

article

Tuning PMOS Mo(O,N) metal gates to NMOS by addition of DyO capping layer

Tunneling of holes is observed by second-harmonic generation

Ultrathin Metal/Amorphous-Silicon/Metal Diode for Bipolar RRAM Selector Applications

Ultrathin NiGe Films Prepared via Catalytic Solid–Vapor Reaction of Ni with GeH4

scientific article published on 19 September 2013

Understanding the EOT–Jg degradation in Ru/SrTiOx/Ru metal–insulator–metal capacitors formed with Ru atomic layer deposition

Vacancy-modulated conductive oxide resistive RAM (VMCO-RRAM): An area-scalable switching current, self-compliant, highly nonlinear and wide on/off-window resistive switching cell

Work-Function Engineering for 32-nm-Node pMOS Devices: High-Performance TaCNO-Gated Films