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List of works by John L. Lyons

Atomic Layer Epitaxy of III-Nitrides: A Microscopic Model of Homoepitaxial Growth

scientific article published on 16 October 2020

Band Alignment of ScxAl1-xN/GaN Heterojunctions

scientific article published on 04 November 2020

Band alignments and polarization properties of BN polymorphs

Carbon-induced trapping levels in oxide dielectrics

Correction to Ultrathin Amorphous Titania on Nanowires: Optimization of Conformal Growth and Elucidation of Atomic-Scale Motifs

scientific article published on 08 January 2020

Effect of Anisotropic Confinement on Electronic Structure and Dynamics of Band Edge Excitons in Inorganic Perovskite Nanowires

scientific article published on 25 February 2020

Exciton Fine Structure in Perovskite Nanocrystals

scientific article published on 22 May 2019

First-Principles Calculations of Luminescence Spectrum Line Shapes for Defects in Semiconductors: The Example of GaN and ZnO

scientific article published in Physical Review Letters

First-principles study of vacancy-assisted impurity diffusion in ZnO

First-principles theory of acceptors in nitride semiconductors

Gallium vacancy complexes as a cause of Shockley-Read-Hall recombination in III-nitride light emitters

scholarly article by Cyrus E. Dreyer et al published 4 April 2016 in Applied Physics Letters

Identification of Microscopic Hole-Trapping Mechanisms in Nitride Semiconductors

Impact of Group-II Acceptors on the Electrical and Optical Properties of GaN

Impact of carbon and nitrogen impurities in high-κ dielectrics on metal-oxide-semiconductor devices

Quasicubic model for metal halide perovskite nanocrystals

scientific article published on 01 December 2019

Shallow versus deep nature of Mg acceptors in nitride semiconductors

scientific article published on 13 April 2012

Shedding light on doping of gallium nitride

scholarly article by John L. Lyons et al published 19 July 2012 in SPIE newsroom

Sulfur doping of AlN and AlGaN for improved n-type conductivity

Surprising stability of neutral interstitial hydrogen in diamond and cubic BN.

scientific article published on 21 January 2016

Theory and Modeling of Oxide Semiconductors