(Si)GeSn nanostructures for light emitters ⬇️

Advanced GeSn/SiGeSn Group IV Heterostructure Lasers. ⬇️

scientific article published on 27 March 2018

Design of a high-speed germanium-tin absorption modulator at mid-infrared wavelengths ⬇️

scholarly article published August 2017

Direct Bandgap Group IV Epitaxy on Si for Laser Applications ⬇️

Direct bandgap GeSn alloys for laser application ⬇️

Direct bandgap GeSn light emitting diodes for short-wave infrared applications grown on Si ⬇️

Direct bandgap GeSn microdisk lasers at 2.5 μm for monolithic integration on Si-platform ⬇️

Effect of ion beam parameters on engineering of nanoscale voids and their stability under post-growth annealing

GeSn lasers for CMOS integration ⬇️

GeSn lasers for monolithic integration on Si

GeSn/SiGeSn Heterostructure and Multi Quantum Well Lasers ⬇️

High Sn-Content GeSn Light Emitters for Silicon Photonics

High-k Gate Stacks on Low Bandgap Tensile Strained Ge and GeSn Alloys for Field-Effect Transistors

article

Negative differential resistance in direct bandgap GeSn p-i-n structures ⬇️

Optical Transitions in Direct-Bandgap Ge1–xSnx Alloys

Optically Pumped GeSn Microdisk Lasers on Si ⬇️

Process modules for GeSn nanoelectronics with high Sn-contents ⬇️

Quantum confinement effects in GeSn/SiGeSn heterostructure lasers ⬇️

Short-wave infrared LEDs from GeSn/SiGeSn multiple quantum wells ⬇️

Si-Ge-Sn heterostructures: Growth and applications ⬇️

SiGeSn Ternaries for Efficient Group IV Heterostructure Light Emitters ⬇️

scientific article published on 3 February 2017

Study of GeSn based heterostructures: towards optimized group IV MQW LEDs.

scientific article published on January 2016