A mechanism for low‐power all‐optical switching in multiple‐quantum‐well structures

AlInN optical confinement layers for edge emitting group III-nitride laser structures

Aluminum incorporation in -layers and implications for growth optimization

scholarly article by U. Rossow et al published January 2007 in Journal of Crystal Growth

Analysis of quantum efficiency of high brightness GaInN/GaN quantum wells

Analysis of the threshold current in nitride-based lasers

Anti-localization suppresses non-radiative recombination in GaInN/GaN quantum wells

Aqueous chemical growth and patterning of ZnO nanopillars on different substrate materials

Atomic scale investigations of ultra-thin GaInN/GaN quantum wells with high indium content

scientific article published on 11 March 2013

Auger recombination in GaInN/GaN quantum well laser structures

article published in 2011

Auger recombination in bulk and quantum well InGaAs

Auger recombination in strained and unstrained InGaAs/InGaAsP multiple quantum‐well lasers

Birefringence and tilted modes in ordered GaInP/AlGaInP waveguides and lasers

article published in 1996

Birefringence in ordered (Al)GaInP

scholarly article in Physical Review B, vol. 55 no. 3, January 1997

Birefringence in orderedGa0.47In0.53As/InP

scholarly article in Physical Review B, vol. 59 no. 3, January 1999

Carrier Transport in InP-Based Lasers, Modulators, and Optical Switching Devices

Carrier confinement in GaInN/AlGaN/GaN quantum wells with asymmetric barriers: direction of the piezoelectric field

article published in 1999

Carrier transport in asymmetrically confined 1.55 μm multiple quantum well laser structures

Carrier-induced localization in In-Ga-As/In-Ga-As-P separate-confinement quantum-well structures

scientific article published on 01 November 1993

Catalyst-free vapor-phase transport growth of vertically aligned ZnO nanorods on 6H-SiC and (11-20)Al2O3

Changes in excess carrier recombination dynamics caused by aging of GaN-based blue laser diodes

Comparative study between laser performance and carrier lifetime of 400 nm emitting GaInN/GaN laser diodes

Comparison of GaInN laser structures grown on different substrates

Composition dependence of polarization fields in GaInN/GaN quantum wells

article

Control of field screening effects in GaInAs(P)/GaInAsP quantum‐confined Stark effect modulator structures

article published in 1996

Control of monolayer terrace formation in selective epitaxy

Correlated terahertz acoustic and electromagnetic emission in dynamically screened InGaN/GaN quantum wells

scholarly article in Physical Review B, vol. 84 no. 8, August 2011

Correlation between Emission Spectra and Defect Position in InGaN-Based Light Emitting Devices

Correlation of Defects and Local Bandgap Variations in GaInN/GaN/AlGaN LEDs

Critical points of the bandstructure of AlN/GaN superlattices investigated by spectroscopic ellipsometry and modulation spectroscopy

Damping of the relaxation resonance in multiple‐quantum‐well lasers by slow interwell transport

Determination of ordering induced birefringence in (Al)GaInP

Determination of the in-plane mass in strained GaInAs/InP quantum wells

Determination of the polarization discontinuity at the AlGaN∕GaN interface by electroreflectance spectroscopy

Dielectric function and bowing parameters of InGaN alloys

Dielectric function and critical points of the band structure for AlGaN alloys

Direct comparison of InGaAs/InGaAlAs and InGaAs/InGaAsP quantum well modulators

Direct-to-indirect energy-gap transition in strainedGaxIn1−xAs/InP quantum wells

scientific article published on 01 October 1993

Dislocation screening and strongly increased internal quantum efficiency in heteroepitaxialGaN/AlxGa1−xNultraviolet-emitting quantum wells

scholarly article in Physical Review B, vol. 79 no. 7, February 2009

Dynamic properties of GaInP multielectrode ridge-waveguide lasers

Effects of spontaneous polarization on GaInN/GaN quantum well structures

Efficiency droop in nitride LEDs revisited: impact of excitonic recombination processes

Electron-hole liquid condensation: Systematics and scaling relations

Electron-hole-correlation effects in generation-recombination noise

scientific article published on 01 January 1992

Enhanced electroabsorption in tensile-strained GayIn1−yAs/AlxIn1−xAs/InP quantum well structures, due to field-induced merging of light-hole and heavy-hole transitions

Enhancement of band-to-band Auger recombination by electron-hole correlations

scientific article published on 01 July 1990

Evaluation of the effective hole masses in pseudomorphic compressively strained GaxIn1−xAs/InP quantum wells

Experimental evidence for charge‐transfer excitation of Yb in InP

article

Experimental proof of impurity Auger recombination in silicon

scientific article published on 01 December 1985

Growth and characterization of InGaN by RF-MBE

Growth kinetics and island evolution during double-pulsed molecular beam epitaxy of InN

Growth of AlxGa1−xN and GaN on photo-electrochemically patterned SiC substrates

Growth of AlxGa1−xN-layers on planar and patterned substrates

Growth of QW structures with high indium concentration on -plane and -plane surfaces by MOVPE

Growth of self-assembled InP quantum islands for red-light-emitting injection lasers

Growth of the active zone in nitride based long wavelength laser structures

Growth optimization and characterization of lattice-matched Al0.82In0.18N optical confinement layer for edge emitting nitride laser diodes

High quality, high efficiency and ultrahigh In-content InGaN QWs – the problem of thermal stability

High resolution near-field spectroscopy investigation of tilted InGaN quantum wells

High-resolution near-field spectroscopy investigation of GaN laterally overgrown structures on SiC

Highly efficient light emission from stacking faults intersecting nonpolar GaInN quantum wells

Hole transport over heterobarriers in InP based multiple quantum well structures

Identification of a nonradiative recombination center in GaAs

Improved composition homogeneity during selective area epitaxy of GaInAs using a novel In precursor

article

Improved modulator characteristics using tensile strain in long‐wavelength InGaAs/InGaAsP multiple quantum wells

In incorporation efficiency and composition fluctuations in MOVPE grown GaInN/GaN hetero structures and quantum wells

article

Indirect‐band‐gap transition in strained GaInAs/InP quantum‐well structures

Indium incorporation dynamics into AlInN ternary alloys for laser structures lattice matched to GaN

Indium incorporation processes investigated by pulsed and continuous growth of ultrathin InGaN quantum wells

scientific article published in March 2015

Influence of barrier height on carrier lifetime in Ga1-yInyP/(AlxGa1-x)1-yInyP single quantum wells.

scientific article published in September 1992

Influence of exciton ionization on recombination dynamics inIn0.53Ga0.47As/InP quantum wells

scientific article published on 01 January 1993

Influence of excitons and electric fields on the dielectric function of GaN: Theory and experiment

scholarly article in Physical Review B, vol. 74 no. 12, September 2006

Influence of low-temperature interlayers on strain and defect density of epitaxial GaN layers

Influence of order-domain size on the optical gain of AlGaInP laser structures

Injection lasers with vertically aligned InP/GaInP quantum dots: Dependence of the threshold current on temperature and dot size

Insights into Interfacial Changes and Photoelectrochemical Stability of In(x)Ga(1-x)N (0001) Photoanode Surfaces in Liquid Environments.

scientific article published on 17 March 2016

Intentional anisotropic strain relaxation in ( 112¯2) oriented Al1−xInxN one-dimensionally lattice matched to GaN

Interface characteristics of GaInP/GaAs double heterostructures grown by metalorganic vapor phase epitaxy

Intervalence band absorption in strained and unstrained InGaAs multiple quantum well structures

Intra- and interwell transitions in GaInN/GaN multiple quantum wells with built-in piezoelectric fields

Intrinsic modulation bandwidth of strained GaInP/AlGaInP quantum well lasers

Investigation of strain effects in selectively grown GaAs on Si

Investigations of deep lying wide bandgap GaN and InGaN quantum well structures: A challenge for ellipsometric methods

Investigations of selectively grown GaN/InGaN epitaxial layers

Investigations on the performance of multiquantum barriers in short wavelength (630 nm) AlGaInP laser diodes

Ionization of the Direct-Gap Exciton in Photoexcited Germanium

scientific article published in Physical Review Letters

Large internal quantum efficiency of In-free UV-emitting GaN∕AlGaN quantum-well structures

Large observed exciton shifts with electric field in InGaAs/InGaAsP stepped quantum wells

Large optical polarization anisotropy due to anisotropic in-plane strain in m-plane GaInN quantum well structures grown on m-plane 6H-SiC

Lattice-matched AlInN in the initial stage of growth

Linewidth enhancement factor and carrier‐induced differential index in InGaAs separate confinement multi‐quantum‐well lasers

Localized high-energy emissions from the vicinity of defects in high-efficiencyGaxIn1−xN∕GaNquantum wells

scholarly article in Physical Review B, vol. 72 no. 8, August 2005

Low nonlinear gain in InGaAs/InGaAlAs separate confinement multiquantum well lasers

Low pressure MOVPE of GaN and heterostructures

Low pressure metalorganic vapor phase epitaxial growth of GaN/GaInN heterostructures

MOVPE grown InP:Er layers using Er(MeCp)3 and Er(IpCp)3

MOVPE grown InP:Yb layers using Yb(IpCp)3 as a new doping source

MOVPE growth of (Al)GaAs on GaAs and Si for photovoltaic applications

Measurement of the indium concentration in high indium content InGaN layers by scanning transmission electron microscopy and atom probe tomography

article

Measuring composition in InGaN from HAADF-STEM images and studying the temperature dependence of Z-contrast

article

Mechanism of thermal degradation in GaInN/GaN quantum wells

Mode Conversion in GaN Based Laser Structures on Sapphire Due to the Birefringence of the Nitrides

Monolayer growth in InP/GaInAs quantum wells grown by selective area MOVPE

Narrow high-energy emission lines in high-resolution near-field spectroscopy on GaInN/GaN quantum wells

Non- and semipolar AlInN one-dimensionally lattice-matched to GaN for realization of relaxed buffer layers for strain engineering in optically active GaN-based devices

Nonlinear optical absorption in separate confinement multi‐quantum‐well structures due to spatial band bending

Nonradiative recombination via deep impurity levels in semiconductors: The excitonic Auger mechanism

scientific article published on 01 February 1988

Nonradiative recombination via deep impurity levels in silicon: Experiment

scientific article published on 01 June 1987

Nonradiative recombination via strongly localized defects in quantum wells

scientific article published on 01 June 1994

On excitation and decay mechanisms of the Yb3+luminescence in InP

Optical Properties of Nitride Quantum Wells: How to Separate Fluctuations and Polarization Field Effects

Optical gain and lasing in self‐assembled InP/GaInP quantum dots

Optical gain in GaInN/GaN heterostructures

Optical gain in ordered GaInP/AlGaInP quantum wells

Optical gain in the nitrides: are there differences to other III–V semiconductors?

Optical gain, gain saturation, and waveguiding in group III-nitride heterostructures

Optical nonlinearity due to carrier separation in tensile strained InGaAs/InP quantum wells

Optical study of extended-molecular-layer flat islands in lattice-matchedIn0.53Ga0.47As/InP andIn0.53Ga0.47As/In1−xGaxAsyP1−yquantum wells grown by low-pressure metal-organic vapor-phase epitaxy with different interruption cycles

scientific article published on 01 October 1992

Optimization scheme for the quantum efficiency of GaInN-based green-light-emitting diodes

Optimizing the growth process of the active zone in GaN based laser structures for the long wavelength region

scientific article published in May 2013

Optimizing the internal quantum efficiency of GaInN SQW structures for green light emitters

Quantum confined Stark effect in InGaAs/InP and InGaAs/InGaAsP multi quantum well structures

Radiative and Nonradiative Recombination Times in Optically Excited GaInN/GaN Quantum Wells

Radiative carrier lifetime, momentum matrix element, and hole effective mass in GaN

Rare earth ions in LPE III-V semiconductors

article published in 1986

Recombination in multiple QWS under high excitation conditions

Recombination of correlated electron-hole pairs in two-dimensional semiconductors

scientific article published on 01 September 1993

Red-light-emitting injection laser based on InP/GaInP self-assembled quantum dots

article by M. K. Zundel et al published 28 September 1998 in Applied Physics Letters

Reflectance difference spectroscopy RDS/RAS combined with spectroscopic ellipsometry for a quantitative analysis of optically anisotropic materials

Relaxation of thermal strain in GaN epitaxial layers grown on sapphire

Scanning near-field luminescence microscopy of green light emitting GaInN/GaN quantum wells grown on c-plane sapphire and on c-plane bulk GaN

Selective area epitaxy of GaInAs using conventional and novel group III precursors

Self-assembling InP quantum dots for red lasers

article by K. Eberl et al published May 1997 in Journal of Crystal Growth

Single variant ordering in GaInAs/InP

Small-signal modulation response of InP/GaInP quantum-dot lasers

Specific emission characteristics of high-quantum-efficiency GaInN/GaN heterostructures

Spontaneous polarization field in polar and nonpolar GaInN/GaN quantum well structures

Stark shift of interband transitions in AlN∕GaN superlattices

Strong enhancement of Eu+3 luminescence in europium-implanted GaN by Si and Mg codoping

scholarly article by J. K. Mishra et al published 11 February 2013 in Applied Physics Letters

Suppression of Nonradiative Recombination by V-Shaped Pits inGaInN/GaNQuantum Wells Produces a Large Increase in the Light Emission Efficiency

scientific article published on 14 September 2005

Systematics of Optical Gain in GaInN/GaN Laser Structures

Temperature dependence of Z-Contrast for InGaN

scientific article published in July 2012

Terahertz pulse emission from strained GaN/GaInN quantum well structures

Theory of Interband Auger Recombination inn-type Silicon

scientific article published on 01 September 1988

Three-dimensional GaN for semipolar light emitters

Time-resolved investigations of field screening in InGaAs/InGaAlAs and InGaAs/InGaAsP multiple quantum well devices

Towards green lasing: ingredients for a green laser diode based on GaInN

Towards understanding the emission efficiency of nitride quantum wells

Transient characteristics of isoelectronic bound excitons at hole-attractive defects in silicon: The C(0.79 eV), P(0.767 eV), and H(0.926 eV) lines

scientific article published on 01 November 1993

Tunable polarization converter based on ordered AlGaInP waveguide structures

article published in 1996

Ultrafast polarization dynamics in biased quantum wells under strong femtosecond optical excitation

article

Valence-band splitting and band-gap reduction in ordered GaInAs/InP

Vapour transport growth of ZnO nanorods

X-ray composition analysis of nonpolar GaInN/GaN multiple quantum well structures

article