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List of works by Markus Weyers

290-fs pulses from a semiconductor disk laser

scientific article

Characterization of semiconductor devices and wafer materials via sub-nanosecond time-correlated single-photon counting

Comparison of symmetric and asymmetric double quantum well extended-cavity diode lasers for broadband passive mode-locking at 780  nm

scientific article published in July 2017

Effect of Electron Blocking Layer Doping and Composition on the Performance of 310 nm Light Emitting Diodes

scientific article

Evidence for strain-induced lateral carrier confinement in InGaAs quantum wells by low-temperature near-field spectroscopy

Growth of strained GaAsSb layers on GaAs (001) by MOVPE

High-power sampled-grating-based master oscillator power amplifier system with 23.5  nm wavelength tuning around 970  nm

scientific article published on 01 October 2018

In situ study of GaAs growth mechanisms using tri-methyl gallium and tri-ethyl gallium precursors in metal-organic vapour phase epitaxy

scholarly article by Markus Pristovsek et al published February 2004 in Journal of Crystal Growth

Indium incorporation efficiency and critical layer thickness of (202¯1) InGaN layers on GaN

Minority-carrier kinetics in heavily doped GaAs:C studied by transient photoluminescence

Mode-locked InGaAs-AlGaAs disk laser generating sub-200-fs pulses, pulse picking and amplification by a tapered diode amplifier

scientific article published in June 2009

Mode-locked laser operation of epitaxially grown Yb:Klu(WO4)2 composites

scientific article published in September 2005

Nonequilibrium carrier dynamics in heavily p-doped GaAs

article

Orientation control of GaN and grown on sapphire by metal-organic vapor phase epitaxy

Passively mode-locked Yb:KLu(WO4)2 oscillators.

scientific article

Passively mode-locked Yb:LuVO(4) oscillator.

scientific article published in November 2006

Real-time calibration of wafer temperature, growth rate and composition by optical in-situ techniques during AlxGa1−xAs growth in MOVPE

article

Reduction of absorption losses in MOVPE-grown AlGaAs Bragg mirrors

scientific article published on 01 August 2018

Segregation and desorption of antimony in InP (001) in MOVPE

scholarly article by S. Weeke et al published January 2007 in Journal of Crystal Growth

Structural and optical properties of (112̅2) InGaN quantum wells compared to (0001) and (112̅0)

Structure investigations of nonpolar GaN layers.

scientific article published in March 2010

The impact of defects to minority-carrier dynamics in heavily doped GaAs:C analyzed by transient photoluminescence spectroscopy

Topography of AlGaN, GaN and InGaN layers grown by metal-organic vapor phase epitaxy

Ultrashort pulse Yb:LaSc(3)(BO(3))(4) mode-locked oscillator

scientific article published in November 2007

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