List of works - Philippe Caroff

0−π phase transition in hybrid superconductor–InSb nanowire quantum dot devices ⬇️

scholarly article by Sen Li et al published 20 January 2017 in Physical Review B

Achievement of High Density InAs Quantum Dots on InP (311)B Substrate Emitting at 1.55 µm

Anomalous zero-bias conductance peak in a Nb-InSb nanowire-Nb hybrid device

scientific article

Antimony Induced {112}A Faceted Triangular GaAs1−xSbx/InP Core/Shell Nanowires and Their Enhanced Optical Quality

scientific article published on 27 July 2015

Approach to wetting-layer-assisted lateral coupling ofInAs∕InPquantum dots

scholarly article in Physical Review B, vol. 72 no. 3, July 2005

Atomic scale strain relaxation in axial semiconductor III-V nanowire heterostructures

scientific article published on 28 October 2014

Ballistic transport and quantum interference in InSb nanowire devices

Band offsets at zincblende-wurtzite GaAs nanowire sidewall surfaces

Carrier Dynamics and Saturation Effect in (113)B InAs/InP Quantum Dot Lasers

article published in 2006

Carrier Relaxation Dynamics 1.55 μm InAs/InP Quantum Dots Under High Resonant Excitation

Characterization of GaSb nanowires grown by MOVPE

Characterization of InAs quantum wires on (001)InP: toward the realization of VCSEL structures with a stabilized polarization

Coherent Charge Transport in Ballistic InSb Nanowire Josephson Junctions. ⬇️

scientific article published on 22 April 2016

Combinatorial Approaches to Understanding Polytypism in III–V Nanowires ⬇️

scientific article published on June 20, 2012

Comparing InSb, InAs, and InSb/InAs nanowire MOSFETs

Comparison of InAs quantum dot lasers emitting at 1.55 µm under optical and electrical injection

Control of III–V nanowire crystal structure by growth parameter tuning

Controlled polytypic and twin-plane superlattices in iii–v nanowires

article by Philippe Caroff et al published 30 November 2008 in Nature Nanotechnology

Controlling the morphology, composition and crystal structure in gold-seeded GaAs(1-x)Sb(x) nanowires

scientific article published on March 2015

Correlation-Induced Conductance Suppression at Level Degeneracy in a Quantum Dot

scientific article published in Physical Review Letters

Critical thickness for InAs quantum dot formation on (311)B InP substrates

Crystal Phases in III--V Nanowires: From Random Toward Engineered Polytypism

Crystal phase engineering in single InAs nanowires

scientific article

Demonstration of Defect-Free and Composition Tunable GaxIn1–xSb Nanowires

article

Development of a Vertical Wrap-Gated InAs FET

article

Diameter Dependence of the Wurtzite−Zinc Blende Transition in InAs Nanowires

Doping Incorporation in InAs nanowires characterized by capacitance measurements

Doping-enhanced radiative efficiency enables lasing in unpassivated GaAs nanowires

scientific article published on 17 June 2016

Editorial-Focus on inorganic semiconductor nanowires for device applications

scientific article

Effects of Crystal Phase Mixing on the Electrical Properties of InAs Nanowires

Electrical characterization of semiconductor nanowires by scanning tunneling microscopy

Electrical properties of InAs1−xSbx and InSb nanowires grown by molecular beam epitaxy

article published in 2012

Emission wavelength control of InAs quantum dots in a GaInAsP matrix grown on InP(311)B substrates

Engineering the Side Facets of Vertical [100] Oriented InP Nanowires for Novel Radial Heterostructures

scientific article published on 30 December 2019

Exciton and biexciton lifetimes in InAs/InP quantum dots emitting at 1.55 µm wavelength under resonant excitation

Faceting, composition and crystal phase evolution in III–V antimonide nanowire heterostructures revealed by combining microscopy techniques

article

Formation of InAs islands on InP(311)B surface by molecular beam epitaxy

Formation of long single quantum dots in high quality InSb nanowires grown by molecular beam epitaxy

scientific article published on 26 August 2015

GaAs/GaSb nanowire heterostructures grown by MOVPE

Giant, Level-DependentgFactors in InSb Nanowire Quantum Dots

scientific article published on 01 September 2009

Gold-free GaAs/GaAsSb heterostructure nanowires grown on silicon

Gold-free growth of GaAs nanowires on silicon: arrays and polytypism

Gold-free ternary III-V antimonide nanowire arrays on silicon: twin-free down to the first bilayer

scientific article

Growth and optical properties of In x Ga1−x P nanowires synthesized by selective-area epitaxy

scientific article published in December 2016

Growth mechanisms and process window for InAs V-shaped nanoscale membranes on Si[001]

article published in 2013

Growth of vertical InAs nanowires on heterostructured substrates

High yield of self-catalyzed GaAs nanowire arrays grown on silicon via gallium droplet positioning

scholarly article by Sébastien R Plissard et al published 20 May 2011 in Nanotechnology

High-gain and low-threshold InAs quantum-dot lasers on InP

article published in 2005

High‐Quality InAs/InSb Nanowire Heterostructures Grown by Metal–Organic Vapor‐Phase Epitaxy

article

Impact of the capping layers on lateral confinement in InAs∕InP quantum dots for 1.55μm laser applications studied by magnetophotoluminescence

article published in 2005

In(x)Ga(1-x)As nanowires with uniform composition, pure wurtzite crystal phase and taper-free morphology

scientific article published on 30 April 2015

InAs film grown on Si(111) by metal organic vapor phase epitaxy

InAs(Sb)/InP(100) quantum dots for mid-infrared emitters: observation of 2.35 µm photoluminescence

InP-InxGa1-xAs core-multi-shell nanowire quantum wells with tunable emission in the 1.3-1.55 μm wavelength range.

scientific article published on 5 September 2017

InP-based radial heterostructures grown on [100] nanowires

scientific article published in December 2014

InSb Nanowire Field-Effect Transistors and Quantum-Dot Devices

article

InSb heterostructure nanowires: MOVPE growth under extreme lattice mismatch

Increase of charge-carrier redistribution efficiency in a laterally organized superlattice of coupled quantum dots

scholarly article in Physical Review B, vol. 74 no. 24, December 2006

Inhomogeneous Si-doping of gold-seeded InAs nanowires grown by molecular beam epitaxy

Lazarevicite-type short-range ordering in ternary III-V nanowires

scholarly article in Physical Review B, vol. 94 no. 19, November 2016

MOVPE growth and structural charactrization of extremely lattice-mismatched InP-InSb nanowire heterostructures

Magnetotransport Subband Spectroscopy in InAs Nanowires

scientific article published in Physical Review Letters

Metal-seeded growth of III-V semiconductor nanowires: towards gold-free synthesis

scientific article published on 12 February 2014

Molecular beam epitaxy growth of quantum dot lasers emitting around 1.5μm on InP(311)B substrates

Morphology and composition controlled GaxIn1−xSb nanowires: understanding ternary antimonide growth

article

Nanowire biocompatibility in the brain--looking for a needle in a 3D stack

scientific article

Nanowires grown on InP (100): growth directions, facets, crystal structures, and relative yield control

scientific article published on 5 June 2014

Optical properties and morphology of InAs∕InP (113)B surface quantum dots

Parameter space mapping of InAs nanowire crystal structure

article published in 2011

Parity independence of the zero-bias conductance peak in a nanowire based topological superconductor-quantum dot hybrid device ⬇️

scientific article

Persistent enhancement of the carrier density in electron irradiated InAs nanowires

scientific article published on 14 June 2013

Phonon Transport and Thermoelectricity in Defect-Engineered InAs Nanowires

Raman spectroscopy of self-catalyzed GaAs(1-x)Sb(x) nanowires grown on silicon

scientific article published on 12 September 2013

Room temperature GaAsSb single nanowire infrared photodetectors

scientific article published on 9 October 2015

Selective-area epitaxy of pure wurtzite InP nanowires: high quantum efficiency and room-temperature lasing

scientific article published on 15 August 2014

Self-Equilibration of the Diameter of Ga-Catalyzed GaAs Nanowires

scientific article published on 19 July 2015

Self-assembled InAs quantum dots grown on InP (311)B substrates: Role of buffer layer and amount of InAs deposited

Simultaneous Selective-Area and Vapor-Liquid-Solid Growth of InP Nanowire Arrays

scientific article published on 2 June 2016

Strong Amplified Spontaneous Emission from High Quality GaAs1–xSbx Single Quantum Well Nanowires

scientific article published on 5 April 2017

Superconductor-nanowire devices from tunneling to the multichannel regime: Zero-bias oscillations and magnetoconductance crossover

scientific article

Supercurrent and multiple Andreev reflections in an InSb nanowire Josephson junction

scientific article

Temperature and frequency characterization of InAs nanowire and HfO2 interface using capacitance–voltage method

Temperature dependence of GaSb overgrowth of tungsten on GaSb (001) substrates using MOVPE

scholarly article published May 2008

Temperature dependent properties of InSb and InAs nanowire field-effect transistors

article

Temperature studies on a single InAs/InP QD layer laser emitting at 1.55 µm

The effect of nitridation on the polarity and optical properties of GaN self-assembled nanorods

scientific article published in 2018

The electrical and structural properties of n-type InAs nanowires grown from metal–organic precursors

article

Thermal conductivity of indium arsenide nanowires with wurtzite and zinc blende phases

scientific article published on 19 May 2011

Time-Resolved X-ray Diffraction Investigation of the Modified Phonon Dispersion in InSb Nanowires

scientific article published on 13 January 2014

Time-resolved pump probe of 1.55μm InAs∕InP quantum dots under high resonant excitation

Tunable Polarity in a III-V Nanowire by Droplet Wetting and Surface Energy Engineering

scientific article published on 17 September 2015

Tunnel junctions in a III–V nanowire by surface engineering

Twin-Induced InSb Nanosails: A Convenient High Mobility Quantum System

scientific article published on 6 January 2016

Twinning Superlattice Formation in GaAs Nanowires

scientific article published on 5 September 2013

Type I band alignment in GaAs81Sb19/GaAs core-shell nanowires

Understanding the growth and composition evolution of gold-seeded ternary InGaAs nanowires

scientific article published on 17 September 2015

Unipolar and bipolar operation of InAs/InSb nanowire heterostructure field-effect transistors

article

Unit Cell Structure of Crystal Polytypes in InAs and InSb Nanowires

Vertical “III–V” V-Shaped Nanomembranes Epitaxially Grown on a Patterned Si[001] Substrate and Their Enhanced Light Scattering

scientific article published on 05 December 2012

Wurtzite–zincblende superlattices in InAs nanowires using a supply interruption method

Zn3As2 Nanowires and Nanoplatelets: Highly Efficient Infrared Emission and Photodetection by an Earth Abundant Material

scientific article published on 3 December 2014

List of works by Philippe Caroff

0−π phase transition in hybrid superconductor–InSb nanowire quantum dot devices ⬇️

Achievement of High Density InAs Quantum Dots on InP (311)B Substrate Emitting at 1.55 µm

Anomalous zero-bias conductance peak in a Nb-InSb nanowire-Nb hybrid device

Antimony Induced {112}A Faceted Triangular GaAs1−xSbx/InP Core/Shell Nanowires and Their Enhanced Optical Quality

Approach to wetting-layer-assisted lateral coupling ofInAs∕InPquantum dots

Atomic scale strain relaxation in axial semiconductor III-V nanowire heterostructures

Ballistic transport and quantum interference in InSb nanowire devices

Band offsets at zincblende-wurtzite GaAs nanowire sidewall surfaces

Carrier Dynamics and Saturation Effect in (113)B InAs/InP Quantum Dot Lasers

Carrier Relaxation Dynamics 1.55 μm InAs/InP Quantum Dots Under High Resonant Excitation

Characterization of GaSb nanowires grown by MOVPE

Characterization of InAs quantum wires on (001)InP: toward the realization of VCSEL structures with a stabilized polarization

Coherent Charge Transport in Ballistic InSb Nanowire Josephson Junctions. ⬇️

Combinatorial Approaches to Understanding Polytypism in III–V Nanowires ⬇️

Comparing InSb, InAs, and InSb/InAs nanowire MOSFETs

Comparison of InAs quantum dot lasers emitting at 1.55 µm under optical and electrical injection

Control of III–V nanowire crystal structure by growth parameter tuning

Controlled polytypic and twin-plane superlattices in iii–v nanowires

Controlling the morphology, composition and crystal structure in gold-seeded GaAs(1-x)Sb(x) nanowires

Correlation-Induced Conductance Suppression at Level Degeneracy in a Quantum Dot

Critical thickness for InAs quantum dot formation on (311)B InP substrates

Crystal Phases in III--V Nanowires: From Random Toward Engineered Polytypism

Crystal phase engineering in single InAs nanowires

Demonstration of Defect-Free and Composition Tunable GaxIn1–xSb Nanowires

Development of a Vertical Wrap-Gated InAs FET

Diameter Dependence of the Wurtzite−Zinc Blende Transition in InAs Nanowires

Doping Incorporation in InAs nanowires characterized by capacitance measurements

Doping-enhanced radiative efficiency enables lasing in unpassivated GaAs nanowires

Editorial-Focus on inorganic semiconductor nanowires for device applications

Effects of Crystal Phase Mixing on the Electrical Properties of InAs Nanowires

Electrical characterization of semiconductor nanowires by scanning tunneling microscopy

Electrical properties of InAs1−xSbx and InSb nanowires grown by molecular beam epitaxy

Emission wavelength control of InAs quantum dots in a GaInAsP matrix grown on InP(311)B substrates

Engineering the Side Facets of Vertical [100] Oriented InP Nanowires for Novel Radial Heterostructures

Exciton and biexciton lifetimes in InAs/InP quantum dots emitting at 1.55 µm wavelength under resonant excitation

Faceting, composition and crystal phase evolution in III–V antimonide nanowire heterostructures revealed by combining microscopy techniques

Formation of InAs islands on InP(311)B surface by molecular beam epitaxy

Formation of long single quantum dots in high quality InSb nanowires grown by molecular beam epitaxy

GaAs/GaSb nanowire heterostructures grown by MOVPE

Giant, Level-DependentgFactors in InSb Nanowire Quantum Dots

Gold-free GaAs/GaAsSb heterostructure nanowires grown on silicon

Gold-free growth of GaAs nanowires on silicon: arrays and polytypism

Gold-free ternary III-V antimonide nanowire arrays on silicon: twin-free down to the first bilayer

Growth and optical properties of In x Ga1−x P nanowires synthesized by selective-area epitaxy

Growth mechanisms and process window for InAs V-shaped nanoscale membranes on Si[001]

Growth of vertical InAs nanowires on heterostructured substrates

High yield of self-catalyzed GaAs nanowire arrays grown on silicon via gallium droplet positioning

High-gain and low-threshold InAs quantum-dot lasers on InP

High‐Quality InAs/InSb Nanowire Heterostructures Grown by Metal–Organic Vapor‐Phase Epitaxy

Impact of the capping layers on lateral confinement in InAs∕InP quantum dots for 1.55μm laser applications studied by magnetophotoluminescence

In(x)Ga(1-x)As nanowires with uniform composition, pure wurtzite crystal phase and taper-free morphology

InAs film grown on Si(111) by metal organic vapor phase epitaxy

InAs(Sb)/InP(100) quantum dots for mid-infrared emitters: observation of 2.35 µm photoluminescence

InP-InxGa1-xAs core-multi-shell nanowire quantum wells with tunable emission in the 1.3-1.55 μm wavelength range.

InP-based radial heterostructures grown on [100] nanowires

InSb Nanowire Field-Effect Transistors and Quantum-Dot Devices

InSb heterostructure nanowires: MOVPE growth under extreme lattice mismatch

Increase of charge-carrier redistribution efficiency in a laterally organized superlattice of coupled quantum dots

Inhomogeneous Si-doping of gold-seeded InAs nanowires grown by molecular beam epitaxy

Lazarevicite-type short-range ordering in ternary III-V nanowires

MOVPE growth and structural charactrization of extremely lattice-mismatched InP-InSb nanowire heterostructures

Magnetotransport Subband Spectroscopy in InAs Nanowires

Metal-seeded growth of III-V semiconductor nanowires: towards gold-free synthesis

Molecular beam epitaxy growth of quantum dot lasers emitting around 1.5μm on InP(311)B substrates

Morphology and composition controlled GaxIn1−xSb nanowires: understanding ternary antimonide growth

Nanowire biocompatibility in the brain--looking for a needle in a 3D stack

Nanowires grown on InP (100): growth directions, facets, crystal structures, and relative yield control

Optical properties and morphology of InAs∕InP (113)B surface quantum dots

Parameter space mapping of InAs nanowire crystal structure

Parity independence of the zero-bias conductance peak in a nanowire based topological superconductor-quantum dot hybrid device ⬇️

Persistent enhancement of the carrier density in electron irradiated InAs nanowires

Phonon Transport and Thermoelectricity in Defect-Engineered InAs Nanowires

Raman spectroscopy of self-catalyzed GaAs(1-x)Sb(x) nanowires grown on silicon

Room temperature GaAsSb single nanowire infrared photodetectors

Selective-area epitaxy of pure wurtzite InP nanowires: high quantum efficiency and room-temperature lasing

Self-Equilibration of the Diameter of Ga-Catalyzed GaAs Nanowires

Self-assembled InAs quantum dots grown on InP (311)B substrates: Role of buffer layer and amount of InAs deposited

Simultaneous Selective-Area and Vapor-Liquid-Solid Growth of InP Nanowire Arrays

Strong Amplified Spontaneous Emission from High Quality GaAs1–xSbx Single Quantum Well Nanowires