List of works by Gilles Patriarche

(Invited) Locally Measuring the Adhesion of InP Membranes Directly Bonded on Silicon

1.43 [micro sign]m InAs bilayer quantum dot lasers on GaAs substrate

1.5 [micro sign]m laser on GaAs with GaInNAsSb quinary quantum well

3.3 µm interband-cascade resonant-cavity light-emitting diode with narrow spectral emission linewidth

A new way to integrate solid state nanopores for translocation experiments

Aberration corrected STEM to study an ancient hair dyeing formula

article

Abrupt GaP/GaAs Interfaces in Self-Catalyzed Nanowires.

scientific article

Abrupt GaP/Si hetero-interface using bistepped Si buffer

Absolute determination of the asymmetry of the in-plane deformation of GaAs (001)

Abstracts of the 24th international isotope society (UK group) symposium: synthesis and applications of labelled compounds 2015.

scientific article published on 18 March 2016

Accommodation at the interface of highly dissimilar semiconductor/oxide epitaxial systems

scholarly article in Physical Review B, vol. 80 no. 15, October 2009

Addition of Si-Containing Gases for Anisotropic Etching of III–V Materials in Chlorine-Based Inductively Coupled Plasma

article

AlGaN-based MQWs grown on a thick relaxed AlGaN buffer on AlN templates emitting at 285 nm

All-optical discrimination at 1.5 [micro sign]m using an ultrafast saturable absorber vertical cavity device

article published in 2000

An indentation method to measure the CRSS of semiconducting materials at elevated temperature

An ultra-thin SiO2 ALD layer for void-free bonding of III–V material on silicon

Analysis of vapor-liquid-solid mechanism in Au-assisted GaAs nanowire growth

article published in 2005

Anisotropic and Smooth Inductively Coupled Plasma Etching of III-V Laser Waveguides Using HBr-O[sub 2] Chemistry

Anisotropic etching of InP with low sidewall and surface induced damage in inductively coupled plasma etching using SiCl4

Arsenic Pathways in Self-Catalyzed Growth of GaAs Nanowires

Atomic Step Flow on a Nanofacet

scientific article published in Physical Review Letters

Atomic scale analyses of {\bb Z}-module defects in an NiZr alloy

scientific article published on 04 October 2018

Atomic-plane-thick reconstruction across the interface during heteroepitaxial bonding of InP-clad quantum wells on silicon

Atomic-plane-thick reconstruction across the interface during heteroepitaxial bonding of InP-clad quantum wells to Si

Atomically Sharp Interface in an h-BN-epitaxial graphene van der Waals Heterostructure

scientific article

Au-assisted molecular beam epitaxy of InAs nanowires: Growth and theoretical analysis

BAlN thin layers for deep UV applications

Band Alignment and Minigaps in Monolayer MoS2-Graphene van der Waals Heterostructures.

scientific article

Band offsets at zincblende-wurtzite GaAs nanowire sidewall surfaces

Bimodal distribution of Indium composition in arrays of low-pressure metalorganic-vapor-phase-epitaxy grown InGaAs/GaAs quantum dots

article

Biomimetic Nanotubes Based on Cyclodextrins for Ion-Channel Applications

scientific article published on 21 October 2015

Biomimetic ion channels formation by emulsion based on chemically modified cyclodextrin nanotubes

article published in 2018

Bonding mechanism of a yttrium iron garnet film on Si without the use of an intermediate layer

scholarly article by Konstantinos Pantzas et al published 6 October 2014 in Applied Physics Letters

Boron distribution in the core of Si nanowire grown by chemical vapor deposition

Buried dislocation networks designed to organize the growth of III-V semiconductor nanostructures

scholarly article in Physical Review B, vol. 70 no. 15, October 2004

Buried dislocation networks for the controlled growth of III–V semiconductor nanostructures

Carbon nanotube translocation to distant organs after pulmonary exposure: insights from in situ (14)C-radiolabeling and tissue radioimaging.

scientific article published on 28 May 2014

Catalyst faceting during graphene layer crystallization in the course of carbon nanofiber growth

scholarly article in Carbon, vol. 79, November 2014

Cavity QED with a single QD inside an optical microcavity

Challenges and Opportunities for Focused Ion Beam Processing at the Nano-scale

Characteristics of HgS nanoparticles formed in hair by a chemical reaction

Characteristics of the surface microstructures in thick InGaN layers on GaN

Characterization of antimonide based material grown by molecular epitaxy on vicinal silicon substrates via a low temperature AlSb nucleation layer

Characterization of piezoelectric and pyroelectric properties of MOVPE-grown strained (111)A InGaAs/GaAs QW structures by modulation spectroscopy

Chemical lift-off and direct wafer bonding of GaN/InGaN P–I–N structures grown on ZnO

Colloidal CdSe/CdS Dot-in-Plate Nanocrystals with 2D-Polarized Emission

scientific article published on 23 July 2012

Columnar Quantum Dashes for polarization insensitive semiconductor optical amplifiers

Columnar quantum dashes for an active region in polarization independent semiconductor optical amplifiers at 1.55μm

Comparative optical studies of InGaAs/GaAs quantum wells grown by MBE on (100) and (311)A GaAs planes

Comparison of GaInNAs/GaAs and GaInNAs/GaNAs/GaAs quantum wells emitting over 1.3μm wavelength

article published in 2003

Comparison of chemical and laser lift-off for the transfer of InGaN-based p-i-n junctions from sapphire to glass substrates

Comparison of light- and heavy-ion-irradiated quantum-wells for use as ultrafast saturable absorbers

Competition between InP and In2O3 islands during the growth of InP on SrTiO3

article

Composition and local strain mapping in Au-catalyzed axial Si/Ge nanowires

scientific article published on 7 September 2012

Composition profiling of InAs∕GaAs quantum dots

article

Composition-Dependent Interfacial Abruptness in Au-Catalyzed Si1–xGex/Si/Si1–xGex Nanowire Heterostructures

article

Conductance statistics from a large array of sub-10 nm molecular junctions

scientific article

Confined VLS growth and structural characterization of silicon nanoribbons

Conservative indentation flow throughout thin (011) InP foils

Control of heterointerface and strain mapping in Au catalyzed axial Si-Si1-xGex nanowires

Control of nitrogen incorporation in Ga(In)NAs grown by metalorganic vapor phase epitaxy

Control of polarization and dipole moment in low-dimensional semiconductor nanostructures

Control of the interfacial abruptness of Au-catalyzed Si-Si1−xGex heterostructured nanowires grown by vapor–liquid–solid

Controlling the Aspect Ratio of Quantum Dots: From Columnar Dots to Quantum Rods

Core/shell colloidal semiconductor nanoplatelets

scientific article

Correlated optical and structural analyses of individual GaAsP/GaP core–shell nanowires

scientific article published on 09 April 2019

Crystal Phase Quantum Dots

scientific article published on 01 April 2010

Crystal growth of bullet-shaped magnetite in magnetotactic bacteria of the Nitrospirae phylum

scientific article

Crystal orientation of GaAs islands grown on SrTiO3 (001) by molecular beam epitaxy

Crystallization of Si Templates of Controlled Shape, Size, and Orientation: Toward Micro- and Nanosubstrates

De-relaxation of plastically relaxed InAs/GaAs quantum dots during the growth of a GaAs encapsulation layer

Deep structural analysis of novel BGaN material layers grown by MOVPE

Deformations induced by a Vickers indentor in InP at room temperature

Density of InAs∕InP(001) quantum dots grown by metal-organic vapor phase epitaxy: Independent effects of InAs and cap-layer growth rates

Design, Fabrication, and Characterization of Near-Milliwatt-Power RCLEDs Emitting at 390 nm

Detailed comparison of GaInNAs/GaAs and GaInNAs/GaNAs/GaAs quantum wells emitting near 1.3 μm wavelength

Determination of the Local Concentrations of Mn Interstitials and Antisite Defects inGaMnAs

scientific article published in Physical Review Letters

Determination of the spin orbit coupling and crystal field splitting in wurtzite InP by polarization resolved photoluminescence

Development of robust interfaces based on crystalline γ-Al2O3(001) for subsequent deposition of amorphous high-κ oxides

article

Devitrification of fluorozirconate glasses: from nucleation to spinodal decomposition

Dipole orientation in a Quantum Rod

Direct FIB fabrication and integration of “single nanopore devices” for the manipulation of macromolecules

scholarly article by Birgitta Zielbauer et al published May 2010 in Microelectronic Engineering

Direct bonding of YIG film on Si without intermediate layer

Direct epitaxial growth of InP based heterostructures on SrTiO3/Si(001) crystalline templates

Direct growth of GaAs-based structures on exactly (001)-oriented Ge/Si virtual substrates: reduction of the structural defect density and observation of electroluminescence at room temperature under CW electrical injection

Directional growth of Ge on GaAs at 175°C using plasma-generated nanocrystals

Dislocation networks adapted to order the growth of III-V semiconductor nanostructures

Distributed Bragg reflectors based on diluted boron-based BAlN alloys for deep ultraviolet optoelectronic applications

Doping influence on the nanoindentation response of GaAs

Dual light-emitting nanoparticles: second harmonic generation combined with rare-earth photoluminescence

Dynamic Characterization of III-Nitride-Based High-Speed Photodiodes

Dynamics of Colloids in Single Solid-State Nanopores

scientific article published on 10 March 2011

Effect of CeF3Addition on the Nucleation and Up-Conversion Luminescence in Transparent Oxyfluoride Glass−Ceramics

article

Effect of Cl2- and HBr-based inductively coupled plasma etching on InP surface composition analyzed using in situ x-ray photoelectron spectroscopy

article

Effect of Dot-Height Truncation on the Device Performance of Multilayer InAs/GaAs Quantum Dot Solar Cells

article by Jihene Zribi et al published March 2016 in IEEE Journal of Photovoltaics

Effect of arsenic on the optical properties of GaSb-based type II quantum wells with quaternary GaInAsSb layers

Effect of cap-layer growth rate on morphology and luminescence of InAs∕InP(001) quantum dots grown by metal-organic vapor phase epitaxy

Effect of diffusion from a lateral surface on the rate of GaN nanowire growth

Effect of layer stacking and p-type doping on the performance of InAs∕InP quantum-dash-in-a-well lasers emitting at 1.55μm

Effect of postgrowth heat treatment on the structural and optical properties of InP/InAsP/InP nanowires

Effect of the orientations and polarities of GaAs substrates CdTe buffer layer structural properties

Effect of the p+-GaAs contact layer doping level on the gradual degradation of InGaAs/AlGaAs pump lasers

Effects of GaNAsSb intermediate barriers on GaInNAsSb quantum well grown by molecular beam epitaxy

Effects of annealing on structure of GaAs(001) nanoindentations

Effects of using As2 and As4 on the optical properties of InGaAs quantum rods grown by molecular beam epitaxy

Efficient exciton concentrators built from colloidal core/crown CdSe/CdS semiconductor nanoplatelets

scientific article

Efficient photogeneration of charge carriers in silicon nanowires with a radial doping gradient

scientific article published on 08 July 2011

Elastic anisotropy of polycrystalline Au films: Modeling and respective contributions of X-ray diffraction, nanoindentation and Brillouin light scattering

Elastic behavior of polycrystalline thin films inferred from in situ micromechanical testing and modeling

Elastic properties of polycrystalline gold thin films: Simulation and X-ray diffraction experiments

Electrical transport across the heterointerface of InP membranes bonded oxide-free on Si

Electroabsorption spectroscopy of Ge∕Si self-assembled islands

Electrolyte-Gated Field Effect Transistor to Probe the Surface Defects and Morphology in Films of Thick CdSe Colloidal Nanoplatelets

article

Electromodulation of the interband and intraband absorption of Ge/Si self-assembled islands

Electronic properties of (Sb;Bi)2Te3 colloidal heterostructured nanoplates down to the single particle level.

scientific article published on 29 August 2017

Electronic structure properties of the In(Ga)As/GaAs quantum dot–quantum well tunnel-injection system

Emission wavelength red-shift by using “semi-bulk” InGaN buffer layer in InGaN/InGaN multiple-quantum-well

Enhanced sputtering of Ge nanowires under synergetic effect of Mn ion and electron beams

Epitaxial growth and picosecond carrier dynamics at 1.55µm of GaInAs/GaInNAs superlattices

article published in 2009

Epitaxial growth and picosecond carrier dynamics of GaInAs/GaInNAs superlattices

Epitaxial growth of high-κ oxides on silicon

Epitaxial growth of quantum rods with high aspect ratio and compositional contrast

article

Er3+-doped PbF2: Comparison between nanocrystals in glass-ceramics and bulk single crystals

Erratum: “High density InAlAs/GaAlAs quantum dots for non-linear optics in microcavities” [J. Appl. Phys. 111, 043107 (2012)]

scholarly article published in Journal of Applied Physics

Evaluation of the surface bonding energy of an InP membrane bonded oxide-free to Si using instrumented nanoindentation

Evidence and control of unintentional As-rich shells in GaAs1–x P x nanowires

scientific article published on 29 April 2019

Evidence for Flat Bands near the Fermi Level in Epitaxial Rhombohedral Multilayer Graphene

scientific article published on 24 April 2015

Excitonic properties of wurtzite InP nanowires grown on silicon substrate

scientific article published on 21 December 2012

Exploration of the ultimate patterning potential achievable with focused ion beams

scientific article published on 11 October 2008

Extended defects in II-VI semiconductor heteroepitaxial layers grown on GaAs substrates of various orientations

FIB carving of nanopores into suspended graphene films

FIB patterning of dielectric, metallized and graphene membranes: A comparative study

Fabrication and characterization of a room-temperature ZnO polariton laser

Faceting mechanisms of Si nanowires and gold spreading

Fast radiative quantum dots: From single to multiple photon emission

Fine-tuning of the interface in high-quality epitaxial silicon films deposited by plasma-enhanced chemical vapor deposition at 200 °C

article published in 2013

First orientation-patterned GaSb ridge waveguides fabrication and preliminary characterization for frequency conversion in the mid-infrared

Flexible metal-semiconductor-metal device prototype on wafer-scale thick boron nitride layers grown by MOVPE.

scientific article

Focused ion beam sculpted membranes for nanoscience tooling

From Excitonic to Photonic Polariton Condensate in a ZnO-Based Microcavity

scientific article published in Physical Review Letters

Functionalized Solid-State Nanopore Integrated in a Reusable Microfluidic Device for a Better Stability and Nanoparticle Detection.

scientific article published on 16 November 2017

Further insight into the growth temperature influence of 1.3 μm GaInNAs/GaAs QWs on their properties

GSMBE growth of GaInAsP/InP 1.3μm-TM-lasers for monolithic integration with optical waveguide isolator

GaAs nanowires formed by Au-assisted molecular beam epitaxy: Effect of growth temperature

GaAs substrates for the MOVPE growth of (Hg,Cd)Te layers

GaInAs/GaAs quantum-well growth assisted by Sb surfactant: Toward 1.3 μm emission

GaN/AlN free-standing nanowires grown by molecular beam epitaxy

GaP/GaAs1−xPx nanowires fabricated with modulated fluxes: A step towards the realization of superlattices in a single nanowire

GaSb-based composite quantum wells for laser diodes operating in the telecom wavelength range near 1.55-μm

Gas sensors boosted by two-dimensional h-BN enabled transfer on thin substrate foils: towards wearable and portable applications

scientific article published on 9 November 2017

Ge/Si self-assembled quantum dots grown on Si(001) in an industrial high-pressure chemical vapor deposition reactor

article published in 1999

Gold anchoring on Si sawtooth faceted nanowires

Gold nanocluster distribution on faceted and kinked Si nanowires

Gradient CdSe/CdS Quantum Dots with Room Temperature Biexciton Unity Quantum Yield

scientific article published on 28 May 2015

Growth and Characterization of InP Nanowires with InAsP Insertions

scientific article published on 05 May 2007

Growth and Characterization of Wurtzite GaAs Nanowires with Defect-Free Zinc Blende GaAsSb Inserts

scientific article published on 01 December 2008

Growth and characterization of InAs columnar quantum dots on GaAs substrate

Growth and structural characterization of GaAs/GaAsSb axial heterostructured nanowires

Growth kinetics of a singleInP1−xAsxnanowire

scholarly article in Physical Review B, vol. 81 no. 23, June 2010

Growth of GaN free-standing nanowires by plasma-assisted molecular beam epitaxy: structural and optical characterization

Growth of GaNxAs1−x atomic monolayers and their insertion in the vicinity of GaInAs quantum wells

Growth of III-Arsenide/Phosphide Nanowires by Molecular Beam Epitaxy

Growth of InAs bilayer quantum dots for long-wavelength laser emission on GaAs

Growth of crystalline γ‐Al2O3 on Si by molecular beam epitaxy: Influence of the substrate orientation

Growth of nanometric CuGaxOy structures on copper substrates

article published in 2005

Growth of vertical GaAs nanowires on an amorphous substrate via a fiber-textured Si platform.

scientific article

Growth of vertical and defect free InP nanowires on SrTiO3(001) substrate and comparison with growth on silicon

Growth optimization and characterization of regular arrays of GaAs/AlGaAs core/shell nanowires for tandem solar cells on silicon

scientific article published on 26 November 2018

Growth temperature dependence of exciton lifetime in wurtzite InP nanowires grown on silicon substrates

Growth, structure and phase transitions of epitaxial nanowires of III-V semiconductors

Growth-in-place deployment of in-plane silicon nanowires

Growth-interruption-induced low-density InAs quantum dots on GaAs

Hair fiber as a nanoreactor in controlled synthesis of fluorescent gold nanoparticles

scientific article published on 12 November 2012

Height dispersion control of InAs/InP quantum dots emitting at 1.55 μm

article by C. Paranthoen et al published 19 March 2001 in Applied Physics Letters

Heteroepitaxial bonding of Si for hybrid photonic devices

Heterostructure formation in nanowhiskers via diffusion mechanism

High density InAlAs/GaAlAs quantum dots for non-linear optics in microcavities

article published in 2012

High performance TiN gate contact on AlGaN/GaN transistor using a mechanically strain induced P-doping

article

High quality thick InGaN nanostructures grown by nanoselective area growth for new generation photovoltaic devices

High reflectance dielectric distributed Bragg reflectors for near ultra-violet planar microcavities: SiO2/HfO2 versus SiO2/SiNx

High structural and optical quality of III-V-on-Si 1.2 nm-thick oxide-bonded hybrid interface

High yield syntheses of reactive fluoride K1−x(Y,Ln)xF1+2x nanoparticles

High-aspect-ratio inductively coupled plasma etching of InP using SiH4/Cl2: Avoiding the effect of electrode coverplate material

Highly crystalline urchin-like structures made of ultra-thin zinc oxide nanowires

scholarly article in RSC Advances, vol. 4 no. 88, 2014

III-V Nanowires on Silicon: a possible route to Si-based tandem solar cells

Imaging the electric properties of InAs∕InP(001) quantum dots capped with a thin InP layer by conductive atomic force microscopy: Evidence of memory effect

Imperfections in II–VI semiconductor layers epitaxially grown by organometallic chemical vapour deposition on GaAs

Improvement of heteroepitaxial growth by the use of twist-bonded compliant substrate: Role of the surface plasticity

Improvement of the oxidation interface in an AlGaAs/AlxOywaveguide structure by using a GaAs/AlAs superlattice

Improving InGaN heterojunction solar cells efficiency using a semibulk absorber

In Situ Optical Monitoring of New Pathways in the Metal-Induced Crystallization of Amorphous Ge

In situ generation of indium catalysts to grow crystalline silicon nanowires at low temperature on ITO

In situ passivation of GaAsP nanowires

scientific article published on 23 October 2017

In-plane InSb nanowires grown by selective area molecular beam epitaxy on semi-insulating substrate

scientific article published on 22 May 2018

InAs nanocrystals on SiO2∕Si by molecular beam epitaxy for memory applications

InAs(Sb) quantum dots grown on GaAs by MBE

InAs/InP Quantum Dash Based Electro Optic Modulator with Over 70 NM Bandwidth at 1.55 μM

scholarly article published May 2007

InAs/InP nanowires grown by catalyst assisted molecular beam epitaxy on silicon substrates

InAs/InP(001) Quantum Dots And Quantum Sticks Grown By MOVPE: Shape, Anisotropy And Formation Process

InAs/InP(001) quantum dots and quantum sticks grown by MOVPE: shape, anisotropy and formation process

InAsP/InP(001) quantum dots emitting at 1.55 μm grown by metalorganic vapor phase epitaxy

InAs∕InP(001) quantum dots emitting at 1.55μm grown by low-pressure metalorganic vapor-phase epitaxy

InGaAs Quantum Dots Grown by Molecular Beam Epitaxy for Light Emission on Si Substrates

scientific article published on 01 October 2011

InP nanowires grown on Silicon and SrTiO 3 by VLS assisted MBE

InP1−xAsx quantum dots in InP nanowires: A route for single photon emitters

Incorporation and redistribution of impurities into silicon nanowires during metal-particle-assisted growth

scientific article

Indentation behaviour of (011) thin films of III–V semiconductors: polarity effect differences between GaAs and InP

Indentation punching through thin (011) InP

Indentation-induced crystallization and phase transformation of amorphous germanium

scholarly article by Gilles Patriarche et al published August 2004 in Journal of Applied Physics

Indentation-induced deformations of GaAs(011) at a high temperature

Indium incorporation in In-richInxGa1−xAs∕GaAslayers grown by low-pressure metalorganic vapor-phase epitaxy and its influence on the growth of self-assembled quantum dots

scholarly article in Physical Review B, vol. 73 no. 4, January 2006

Inductively coupled plasma etching of GaAs suspended photonic crystal cavities

Influence of Ce3+ doping on the structure and luminescence of Er3+-doped transparent glass-ceramics

Influence of catalyst droplet diameter on the growth direction of InP nanowires grown on Si(001) substrate

Influence of deposition parameters and post-deposition plasma treatments on the photoluminescence of polymorphous silicon carbon alloys

Influence of recapture on the emission statistics of short radiative lifetime quantum dots

Influence of surface reconstructions on the shape of InAs quantum dots grown on InP(001)

Influence of the surface reconstruction on the growth of InP on SrTiO3(001)

Influence of the thermal treatment on the optical and structural properties of 1.3 μm emitting LP-MOVPE grown InAs/GaAs quantum dots

Influence of the twist angle on the plasticity of the GaAs compliant substrates realized by wafer bonding

article by Gilles Patriarche & E Le Bourhis published 22 November 2002 in Journal of Physics: Condensed Matter

Infrared Photodetection Based on Colloidal Quantum-Dot Films with High Mobility and Optical Absorption up to THz

article

Inhibition of thickness variations during growth of InAsP/InGaP and InAsP/InGaAsP multiquantum wells with high compensated strains

Initial stage of the overgrowth of InP on InAs∕InP(001) quantum dots: Formation of InP terraces driven by preferential nucleation on quantum dot edges

Instrumented nanoindentation and scanning electron transmission microscopy applied to the study of the adhesion of InP membranes heteroepitaxially bonded to Si

article

Interface Intermixing in Type II InAs/GaInAsSb Quantum Wells Designed for Active Regions of Mid-Infrared-Emitting Interband Cascade Lasers

scientific article published on 7 December 2015

Interface roughness transport in terahertz quantum cascade detectors

Interfacial abruptness in axial Si/SiGe heterostructures in nanowires probed by scanning capacitance microscopy

Interplay between tightly focused excitation and ballistic propagation of polariton condensates in a ZnO microcavity

scholarly article in Physical Review B, vol. 92 no. 23, December 2015

Investigation of a relaxation mechanism specific to InGaN for improved MOVPE growth of nitride solar cell materials

article published in 2011

Investigation of new approaches for InGaN growth with high indium content for CPV application

Investigation on Mn doping of Ge nanowires for spintronics

Investigations on GaAsSbN/GaAs quantum wells for 1.3–1.55μm emission

Investigations on GaInNAsSb quinary alloy for 1.5 μm laser emission on GaAs

Kinematic versus dynamic approaches of x‐ray diffraction simulation. Application to the characterization of InGaAs/InGaAlAs multiple quantum wells

Kinetics and Statistics of Vapor-Liquid-Solid Growth of III-V Nanowires

Large Array of Sub-10-nm Single-Grain Au Nanodots for use in Nanotechnology

scientific article published on 01 August 2011

Large intrinsic birefringence in zinc-blende based artificial semiconductors

Large-Area Two-Dimensional Layered Hexagonal Boron Nitride Grown on Sapphire by Metalorganic Vapor Phase Epitaxy

Last advances in Yb3+doped CaF 2 ceramics synthesis

Lazarevicite-type short-range ordering in ternary III-V nanowires

scholarly article in Physical Review B, vol. 94 no. 19, November 2016

Local electronic transport through InAs/InP(0 0 1) quantum dots capped with a thin InP layer studied by an AFM conductive probe

Localisation of silicon nanowires grown by UHV-CVD in (111)-oriented apertures opened in Si (001)

Locally measuring the adhesion of InP directly bonded on sub-100 nm patterned Si

scientific article published on 15 February 2016

Long-range ordering of III–V semiconductor nanostructures by shallowly buried dislocation networks

article by J Coelho et al published 30 October 2004 in Journal of Physics: Condensed Matter

Low density of self-assembled InAs quantum dots grown by solid-source molecular beam epitaxy on InP(001)

Low temperature plasma enhanced CVD epitaxial growth of silicon on GaAs: a new paradigm for III-V/Si integration

scientific article (publication date: 11 May 2016)

Low-damage dry-etched grating on an MQW active layer and dislocation-free InP regrowth for 1.55-/spl mu/m complex-coupled DFB lasers fabrication

Low-load deformation of InP under contact loading; comparison with GaAs

Low-loss orientation-patterned GaSb waveguides for mid-infrared parametric conversion

Luminescence of polymorphous silicon carbon alloys

Magnetic properties and domain structure of (Ga,Mn)As films with perpendicular anisotropy

scholarly article in Physical Review B, vol. 73 no. 19, May 2006

Mask effect in nano-selective- area-growth by MOCVD on thickness enhancement, indium incorporation, and emission of InGaN nanostructures on AlN-buffered Si(111) substrates

article by Y. El Gmili et al published 6 January 2017 in Optical materials express

Measuring and Modeling the Growth Dynamics of Self-Catalyzed GaP Nanowire Arrays

scientific article published on 19 December 2017

Mechanical response of wall-patterned GaAs surface

Mechanism of Ohmic Cr/Ni/Au contact formation on p-GaN

Mechanism of anisotropy during inductively coupled plasma (ICP) etching of inp-based heterostructures for the fabrication of photonic devices

Mechanistic Insight and Optimization of InP Nanocrystals Synthesized with Aminophosphines

Mesoscopic scale description of nucleation processes in glasses

Metal organic vapor phase epitaxy growth of GaAsN on GaAs using dimethylhydrazine and tertiarybutylarsine

Metal organic vapor phase epitaxy of InAsP/InP(001) quantum dots for 1.55μm applications: Growth, structural, and optical properties

Metal-organic vapor-phase epitaxy of defect-free InGaAs/GaAs quantum dots emitting around 1.3μm

Metallic Functionalization of CdSe 2D Nanoplatelets and Its Impact on Electronic Transport

Metamorphic approach to single quantum dot emission at 1.55μm on GaAs substrate

Microphotoluminescence around 1.5 μm from a single InAs/InP(001) quantum dot grown by MOVPE

Microphotoluminescence of exciton and biexciton around 1.5μm from a single InAs∕InP(001) quantum dot

Microscopic structure and optical properties of GaAs1−xNx/GaAs(001) interface grown by metalorganic vapor phase epitaxy

Microstructural and electrical investigation of Pd/Au ohmic contact on p-GaN

Mid-infrared intersublevel absorption of vertically electronically coupled InAs quantum dots

Mid/far-infrared semiconductor devices exploiting plasmonic effects

Modulated reflectivity probing of quantum dot and wetting layer states in InAs/GaInAsP/InP quantum dot laser structures

Modulation spectroscopy characterization of InAs/GaInAsP/InP quantum dash laser structures

Monolithic integration of InP based heterostructures on silicon using crystalline Gd 2 O 3 buffers

Monolithic integration of InP based heterostructures on silicon using crystalline Gd2O3 buffers

Morphology and composition of highly strained InGaAs and InGaAsN layers grown on GaAs substrate

article

Morphology and valence band offset of GaSb quantum dots grown on GaP(001) and their evolution upon capping.

scientific article published on 8 May 2017

Morphology of self-catalyzed GaN nanowires and chronology of their formation by molecular beam epitaxy

scientific article published on 21 April 2011

Multi-scale structuration of glasses: Observations of phase separation and nanoscale heterogeneities in glasses by Z-contrast scanning electron transmission microscopy

Multicharacterization approach for studying InAl(Ga)N/Al(Ga)N/GaN heterostructures for high electron mobility transistors

article

Multifunctional hybrid silica nanoparticles based on [Mo₆Br₁₄]²⁻ phosphorescent nanosized clusters, magnetic γ-Fe₂O₃ and plasmonic gold nanoparticles

scientific article published on 17 March 2014

Multilayered InGaN/GaN structure vs. single InGaN layer for solar cell applications: A comparative study

N-enrichment at the GaAs1−xNx/GaAs(001) interface: microstructure and optical properties

Nanoindentation of GaAs compliant substrates

Nanoindentation response of a single micrometer-sized GaAs wall

Nanoindentation response of a thin InP membrane

Nanoindentation response of compound semiconductors

Nanoindentation-induced structural phase transformations in crystalline and amorphous germanium

scholarly article by Maha M.O. Khayyat et al published 2009 in International Journal of Nano and Biomaterials

Nanometer-scale, quantitative composition mappings of InGaN layers from a combination of scanning transmission electron microscopy and energy dispersive x-ray spectroscopy

article

Nanoparticle Electrical Analysis and Detection with a Solid-state Nanopore in a Microfluidic Device

Nanoscale Surface and Sub-Surface Chemical Analysis of SiGe Nanowires

Nanoscale elemental quantification in heterostructured SiGe nanowires

scientific article published on 01 May 2015

Nanoscale investigation of a radial p-n junction in self-catalyzed GaAs nanowires grown on Si (111)

Nanoscale selective area growth of thick, dense, uniform, In-rich, InGaN nanostructure arrays on GaN/sapphire template

Nanoselective area growth and characterization of dislocation-free InGaN nanopyramids on AlN buffered Si(111) templates

Nanoselective area growth of GaN by metalorganic vapor phase epitaxy on 4H-SiC using epitaxial graphene as a mask

article by Renaud Puybaret et al published 7 March 2016 in Applied Physics Letters

Nanoselective area growth of defect-free thick indium-rich InGaN nanostructures on sacrificial ZnO templates

scientific article published on 30 March 2017

Nanostructure and luminescence properties of amorphous and crystalline ytterbium–yttrium oxide thin films obtained with pulsed reactive crossed-beam deposition

scholarly article by Jean-François Bisson et al published 30 October 2014 in Journal of Materials Science

Nanowires for quantum optics

Neutral and charged multi-exciton complexes in single InAs quantum dots grown on InP(001)

New insights into the Mo/Cu(In,Ga)Se2 interface in thin film solar cells: Formation and properties of the MoSe2 interfacial layer.

scientific article

New progresses in transparent rare-earth doped glass-ceramics

Nondestructive Characterization of Residual Threading Dislocation Density in HgCdTe Layers Grown on CdZnTe by Liquid-Phase Epitaxy

Nondestructive three-dimensional imaging of crystal strain and rotations in an extended bonded semiconductor heterostructure

scholarly article in Physical Review B, vol. 92 no. 20, November 2015

Nonstoichiometric Low-Temperature Grown GaAs Nanowires

Novel Heterostructured Ge Nanowires Based on Polytype Transformation

scientific article published on 08 July 2014

Nucleation Antibunching in Catalyst-Assisted Nanowire Growth

scientific article published in Physical Review Letters

Nucleation efficiency of erbium and ytterbium fluorides in transparent oxyfluoride glass-ceramics

One step Nano Selective Area Growth of localized InAs/InP quantum dots for single photon source applications

One-step nano-selective area growth (nano-SAG) of localized InAs/InP quantum dots: First step towards single-photon source applications

scholarly article by N. Gogneau et al published July 2008 in Journal of Crystal Growth

Onset of plasticity in a Σ = 5 GaAs compliant structure

article by E. Le Bourhis & Gilles Patriarche published December 2001 in Philosophical Magazine Letters

Optical and electronic properties of GaAs-based structures with columnar quantum dots

Optical and structural investigation of In1−xGaxP free-standing microrods

Optical and structural properties of INP nanowires grown on silicon substrate

Optical polarization properties of InAs/InP quantum dot and quantum rod nanowires.

scientific article

Optically active defects in an InAsP/InP quantum well monolithically grown on SrTiO3(001)

Optics with single nanowires

Optimization of 1550nm InAs/InP Quantum Dash and Quantum Dot based semiconductor optical amplifier

Organometallic precursors as catalyst to grow three-dimensional micro/nanostructures: Spheres, clusters & wires

Orientation dependent emission properties of columnar quantum dash laser structures

Origin of light scattering in ytterbium doped calcium fluoride transparent ceramic for high power lasers

Origin of the bimodal distribution of low-pressure metal-organic-vapor-phase-epitaxy grown InGaAs/GaAs quantum dots

Oxide glass used as inorganic template for fluorescent fluoride nanoparticles synthesis

Phase coherent transport in GaAs/AlGaAs core–shellnanowires

Phase separation and superlattice formation by spontaneous vertical composition modulation in GaAs1−xNx/GaAs

article

Photoluminescence from a single InGaAs epitaxial quantum rod

Photoluminescence polarization and piezoelectric properties of InAs/InP quantum rod-nanowires

Photoluminescence probing of non-radiative channels in hydrogenated In(Ga)As/GaAs quantum dots

Photon Cascade from a Single Crystal Phase Nanowire Quantum Dot.

scientific article published on 25 January 2016

Photonic crystal nanolasers with controlled spontaneous emission

Piezoelectric InGaAs/GaAs/AlGaAs quantum well lasers grown on (111)A GaAs by metalorganic vapor phase epitaxy

Piezoelectric effect in InAs/InP quantum rod nanowires grown on silicon substrate

Plastic behaviour of an AlAs/GaAs superlattice with a short period

Plastic deformation of III–V semiconductorsunder concentrated load

Plasticity and Fracture of InP/Si Substructures

scholarly article published May 2014

Plasticity of GaAs compliant substructures

article by E Le Bourhis & Gilles Patriarche published July 2001 in Materials Science and Engineering A: Structural Materials: Properties, Microstructures and Processing

Plasticity of GaAs(011) at room temperature under concentrated load

article by Gilles Patriarche et al published August 2001 in Philosophical Magazine Letters

Polarity influence on the indentation punching of thin {111} GaAs foils at elevated temperatures

Polarity influence on the nanoindentation response of GaAs

Polarization Properties of Columnar Quantum Dots: Effects of Aspect Ratio and Compositional Contrast

article

Polarization dependence of electroluminescence from closely-stacked and columnar quantum dots

Polarization dependence study of electroluminescence and absorption from InAs∕GaAs columnar quantum dots

Polarization properties of single and ensembles of InAs/InP quantum rod nanowires emitting in the telecom wavelengths

article published in 2013

Potential of semiconductor nanowires for single photon sources

Predictive modeling of self-catalyzed III-V nanowire growth

scholarly article in Physical Review B, vol. 88 no. 19, November 2013

Pressure-Dependent Photoluminescence Study of Wurtzite InP Nanowires

scientific article published on 12 April 2016

Probing the electronic properties of CVD graphene superlattices

Processing of InP-Based Shallow Ridge Laser Waveguides Using a HBr ICP Plasma

scholarly article published May 2007

Protein transport through a narrow solid-state nanopore at high voltage: experiments and theory

scientific article published on 15 June 2012

Pseudomorphic molecular beam epitaxy growth of γ-Al2O3(001) on Si(001) and evidence for spontaneous lattice reorientation during epitaxy

Publisher's Note: Interplay between tightly focused excitation and ballistic propagation of polariton condensates in a ZnO microcavity [Phys. Rev. B92, 235308 (2015)]

scholarly article in Physical Review B, vol. 93 no. 3, January 2016

Quantitative evaluation of microtwins and antiphase defects in GaP/Si nanolayers for a III-V photonics platform on silicon using a laboratory X-ray diffraction setup

scientific article published on 31 May 2015

Quantum cascade lasers grown on silicon

Quantum cascade lasers grown on silicon.

scientific article

Quantum cascade lasers monolithically integrated on germanium

Quantum efficiency of InAs/InP nanowire heterostructures grown on silicon substrates

Quantum optics with single nanowire quantum dots

Quantum well infrared photodetectors hardiness to the nonideality of the energy band profile

Quantum well interband semiconductor lasers highly tolerant to dislocations

Quasi one-dimensional transport in single GaAs/AlGaAs core-shell nanowires

Random stacking sequences in III-V nanowires are correlated

scholarly article in Physical Review B, vol. 89 no. 24, June 2014

Rare-earth doped oxyfluoride glass-ceramics and fluoride ceramics: Synthesis and optical properties

Reactive-ion etching of high-Q and submicron-diameter GaAs∕AlAs micropillar cavities

Recent advances in development of vertical-cavity based short pulse source at 1.55 μm

Recent developments of InP-based quantum dashes for directly modulated lasers and semiconductor optical amplifiers

Resonant TE Transmission Through a Continuous Metal Film: Perspectives for Low-Loss Plasmonic Elements

article

Role of V-pits in the performance improvement of InGaN solar cells

Role of compositional fluctuations and their suppression on the strain and luminescence of InGaN alloys

article

Role of nonlinear effects in nanowire growth and crystal phase

scholarly article in Physical Review B, vol. 80 no. 20, November 2009

Scanning tunneling spectroscopy of cleaved InAs/GaAs quantum dots at low temperatures

scholarly article in Physical Review B, vol. 77 no. 15, April 2008

Selective CO2 methanation on Ru/TiO2 catalysts: unravelling the decisive role of the TiO2 support crystal structure

Selective area heteroepitaxy of GaSb on GaAs (001) for in-plane InAs nanowire achievement

scientific article published on 18 November 2016

Selective growth of site-controlled Quantum Dots

Self-assembled Ge nanocrystals on BaTiO3∕SrTiO3∕Si(001)

Semibulk InGaN: A novel approach for thick, single phase, epitaxial InGaN layers grown by MOVPE

Semiconductor nanowires in InP and related material systems: MBE growth and properties

Shape-engineered epitaxial InGaAs quantum rods for laser applications

article published in 2008

Sharpening the Interfaces of Axial Heterostructures in Self-Catalyzed AlGaAs Nanowires: Experiment and Theory

scientific article published on 3 February 2016

Shear-driven phase transformation in silicon nanowires

scientific article published on 12 January 2018

Si Incorporation in InP Nanowires Grown by Au-Assisted Molecular Beam Epitaxy

Sidewall and surface induced damage comparison between reactive ion etching and inductive plasma etching of InP using a CH4/H2/O2 gas mixture

Sidewall passivation assisted by a silicon coverplate during Cl[sub 2]–H[sub 2] and HBr inductively coupled plasma etching of InP for photonic devices

Silicon Nanowires Coated with Silver Nanostructures as Ultrasensitive Interfaces for Surface-Enhanced Raman Spectroscopy

scientific article published on 01 July 2009

Silicon surface preparation for III-V molecular beam epitaxy

Silicon-Microtube Scaffold Decorated with Anatase TiO2as a Negative Electrode for a 3D Litium-Ion Microbattery

Silicon-on-insulator and SiGe waveguide photodetectors with Ge/Si self-assembled islands

Silicon–on–insulator waveguide photodetector with Ge/Si self-assembled islands

Simultaneous growth of GaN/AlGaN quantum wells on c-, a-, m-, and (20.1)-plane GaN bulk substrates obtained by the ammonothermal method: Structural studies

Single photon sources using InAs/InP quantum dots

Single step fabrication of N-doped graphene/Si3N4/SiC heterostructures

article by Emilio Vélez-Fort et al published 8 May 2014 in Nano Research

Single-crystal nanopyramidal BGaN by nanoselective area growth on AlN/Si(111) and GaN templates

scientific article published on 15 February 2016

Smooth sidewall in InP-based photonic crystal membrane etched by N[sub 2]-based inductively coupled plasma

Solid-solution strengthening in ordered InxGa1 − xP alloys

Solid-state nanopore easy chip integration in a cheap and reusable microfluidic device for ion transport and polymer conformation sensing

scientific article published on 17 October 2018

Spontaneous compliance of the InP∕SrTiO3 heterointerface

Stable and high yield growth of GaP and In0.2Ga0.8As nanowire arrays using In as a catalyst

scientific article published on 28 August 2020

Step-bunching instability in strained-layer superlattices grown on vicinal substrates

article by Gilles Patriarche et al published 17 January 2000 in Applied Physics Letters

Stored elastic energy influence on the elastic–plastic transition of GaAs structures

Strain and composition of capped Ge/Si self-assembled quantum dots grown by chemical vapor deposition

article

Strain in a silicon-on-insulator nanostructure revealed by 3D x-ray Bragg ptychography.

scientific article

Stress-driven self-ordering of III–V nanostructures

Stress-engineered orderings of self-assembled III-V semiconductor nanostructures

Strong linear polarization induced by a longitudinal magnetic field in II-VI semimagnetic semiconductor layers

scholarly article in Physical Review B, vol. 74 no. 7, August 2006

Structural analysis of site-controlled InAs/InP quantum dots

Structural and compositional characterization of MOVPE GaN thin films transferred from sapphire to glass substrates using chemical lift-off and room temperature direct wafer bonding and GaN wafer scale MOVPE growth on ZnO-buffered sapphire

article

Structural and optical investigations of AlGaN MQWs grown on a relaxed AlGaN buffer on AlN templates for emission at 280nm

Structural and optical properties of low-density and In-rich InAs∕GaAs quantum dots

Structural and optical properties of nanodots, nanowires, and multi-quantum wells of III-nitride grown by MOVPE nano-selective area growth

Structural and photoluminescence studies of InAsN quantum dots grown on GaAs by MBE

Structural and photoluminescence studies of highly crystalline un-annealed ZnO nanorods arrays synthesized by hydrothermal technique

Structural characterisation of transparent oxyfluoride glass-ceramics

Structural effects of the thermal treatment on a GaInNAs/GaAs superlattice

Structural properties of epitaxial SrTiO3 thin films grown by molecular beam epitaxy on Si(001)

article published in 2006

Structural properties of strained piezoelectric [111]A-oriented InGaAs/GaAs quantum well structures grown by MOVPE

Structural studies of nano/micrometric semiconducting GaInP wires grown by MOCVD

Structure and Magnetism of Orthorhombic Epitaxial FeMnAs

Structure of annealed nanoindentations in n- and p-doped (001)GaAs

Structure of nanoindentations in heavily n- and p-doped (001) GaAs

Structure of the GaAs/InP interface obtained by direct wafer bonding optimised for surface emitting optical devices

article by Gilles Patriarche et al published 15 November 1997 in Journal of Applied Physics

Study of radial growth rate and size control of silicon nanocrystals in square-wave-modulated silane plasmas

Study of the nucleation and growth of InP nanowires on silicon with gold-indium catalyst

article published in 2017

Sub-5nm FIB direct patterning of nanodevices

Sub-nanometrically resolved chemical mappings of quantum-cascade laser active regions

Submicron-diameter semiconductor pillar microcavities with very high quality factors

Submilliwatt optical bistability in wafer fused vertical cavity at 1.55-μm wavelength

Subpicosecond pulse generation at 134GHz using a quantum-dash-based Fabry-Perot laser emitting at 1.56μm

Subpicosecond pulse generation at 134 GHz and low radiofrequency spectral linewidth in quantum dash-based Fabry-Perot lasers emitting at 1.5 [micro sign]m

Suppression of crack generation in AlGaN/GaN distributed Bragg reflectors grown by MOVPE

Surface effects on exciton diffusion in non polar ZnO/ZnMgO heterostructures

scientific article published on 9 November 2017

Surface plasmon modulation induced by a direct-current electric field into gallium nitride thin film grown on Si(111) substrate

Surface-emitting quantum cascade lasers with metallic photonic-crystal resonators

Surface-plasmon distributed-feedback mid-infrared quantum cascade lasers based on hybrid plasmon/air-guided modes

Surface-plasmon distributed-feedback mid-infrared quantum cascade lasers based on hybrid plasmon/air-guided modes

Surface-plasmon distributed-feedback quantum cascade lasers operating pulsed, room temperature

Synthesis and optical characterizations of Yb-doped CaF2 ceramics

Synthesis and optical characterizations of undoped and rare-earth-doped CaF2 nanoparticles

Synthesis and photoluminescence properties of silicon nanowires treated by high-pressure water vapor annealing

Synthesis of Fluoride Nanoparticles in Non-Aqueous Nanoreactors. Luminescence Study of Eu3+:CaF2

Synthesis of In0.1Ga0.9N/GaN structures grown by MOCVD and MBE for high speed optoelectronics

Synthesis of Zinc and Lead Chalcogenide Core and Core/Shell Nanoplatelets Using Sequential Cation Exchange Reactions

Synthesis of long group IV semiconductor nanowires by molecular beam epitaxy

scientific article

Synthesis of silicon nanocrystals in silane plasmas for nanoelectronics and large area electronic devices

TEM study of the indentation behaviour of thin Au film on GaAs

TEM study of the morphological and compositional instabilities of InGaAsP epitaxial structures

article

TEM-nanoindentation studies of semiconducting structures.

scientific article published on 20 July 2006

Telecom-wavelength single-photon sources for quantum communications

Temperature conditions for GaAs nanowire formation by Au-assisted molecular beam epitaxy

scientific article published on 14 July 2006

Thermal stability of ion-irradiated InGaAs with (sub-) picosecond carrier lifetime

article published in 2003

Thermal stability of ion-irradiated InGaAs with subpicosecond carrier lifetime

Thermodynamic analysis of Zn-Cd-Te, Zn-Hg-Te and Cd-Hg-Te: phase separation in ZnxCd1−xTe and ZnxHg1−xTe

Thermodynamic analysis of the shape, anisotropy and formation process of InAs/InP(001) quantum dots and quantum sticks grown by metalorganic vapor phase epitaxy

Thermodynamic description of the competition between quantum dots and quantum dashes during metalorganic vapor phase epitaxy in theInAs∕InP(001)system: Experiment and theory

article

Thermodynamical analysis of the shape and size dispersion ofInAs∕InP(001)quantum dots

scholarly article in Physical Review B, vol. 73 no. 16, April 2006

Threading dislocation free GaSb nanotemplates grown by selective molecular beam epitaxy on GaAs (001) for in-plane InAs nanowire integration

Time-multiplexed, inductively coupled plasma process with separate SiCl[sub 4] and O[sub 2] steps for etching of GaAs with high selectivity

Time-resolved spectroscopy of InAsP/InP(001) quantum dots emitting near 2 μm

Tolerance to Optical Feedback of 10 GBPs Quantum-Dash Based Lasers Emitting at 1.55 μm

Towards A Mid-Infrared Polaron Laser Using InAs/GaAs Self-Assembled Quantum Dots

Towards InAs/InGaAs/GaAs Quantum Dot Solar Cells Directly Grown on Si Substrate

scientific article published on 22 July 2015

Towards a mid-infrared polaron laser using InAs/GaAs self-assembled quantum dots

Towards a monolithically integrated III–V laser on silicon: optimization of multi-quantum well growth on InP on Si

Towards polarization insensitive semiconductor optical amplifiers using InAs/GaAs columnar quantum dots

Transformation de phase dans un film de germanium amorphe induite par nano-indentation

scholarly article published July 2005

Transmission electron microscopy observations of low-load indents in GaAs

article

Transmission electron microscopy study of the InP/InGaAs and InGaAs/InP heterointerfaces grown by metalorganic vapor-phase epitaxy

article

Trap-Free Heterostructure of PbS Nanoplatelets on InP(001) by Chemical Epitaxy

scientific article published on 11 February 2019

Tuning InAs/InP(001) quantum dot emission from 1.55 to 2 μm by varying cap-layer growth rate in metalorganic vapor phase epitaxy

Tuning the structural properties of InAs nanocrystals grown by molecular beam epitaxy on silicon dioxide

Twin formation during the growth of InP on SrTiO3

article by J. Cheng et al published 8 June 2009 in Applied Physics Letters

Twist-bonded compliant substrates for III–V semiconductors heteroepitaxy

Type I band alignment in GaAs81Sb19/GaAs core-shell nanowires

Type II heterostructures formed by zinc-blende inclusions in InP and GaAs wurtzite nanowires

Type-II CdSe/CdTe core/crown semiconductor nanoplatelets

scientific article published on 6 November 2014

Ultrathin PECVD epitaxial Si solar cells on glass via low-temperature transfer process

Van der Waals Epitaxy of GaSe/Graphene Heterostructure: Electronic and Interfacial Properties

scientific article

Vapor-liquid-solid mechanisms: Challenges for nanosized quantum cluster/dot/wire materials

Versatile cyclodextrin nanotube synthesis with functional anchors for efficient ion channel formation: design, characterization and ion conductance

scientific article published on 01 August 2018

Void-free direct bonding of InP to Si: Advantages of low H-content and ozone activation

Wave-Function Engineering in HgSe/HgTe Colloidal Heterostructures To Enhance Mid-infrared Photoconductive Properties

scientific article published on 07 June 2018

Wet-Route Synthesis and Characterization of Yb:CaF2Optical Ceramics

Wetting layer states of InAs∕GaAs self-assembled quantum dot structures: Effect of intermixing and capping layer

Why Does Wurtzite Form in Nanowires of III-V Zinc Blende Semiconductors?

scientific article published in Physical Review Letters

Wurtzite InP/InAs/InP core–shell nanowires emitting at telecommunication wavelengths on Si substrate

scholarly article by M H Hadj Alouane et al published 12 September 2011 in Nanotechnology

Wurtzite to Zinc Blende Phase Transition in GaAs Nanowires Induced by Epitaxial Burying

scientific article published on 10 May 2008

Zinc blende GaAsSb nanowires grown by molecular beam epitaxy

scientific article published on 28 May 2008

ZnS anisotropic nanocrystals using a one-pot low temperature synthesis