Below bandgap transitions in an AlGaN/GaN transistor heterostructure observed by photoreflectance spectroscopy

article

Carrier Dynamics and Dynamic Band-Bending in Type-II ZnTe/ZnSe Quantum Dots

Carrier delocalization in InAs/InGaAlAs/InP quantum-dash-based tunnel injection system for 1.55 µm emission

Carrier dynamics between delocalized and localized states in type-II GaAsSb/GaAs quantum wells

scientific article published on 7 February 2011

Carrier dynamics in type-II GaAsSb/GaAs quantum wells

scientific article published on 5 April 2012

Carrier localization in GaBiAs probed by photomodulated transmittance and photoluminescence

Carrier relaxation bottleneck in type-II InAs/InGaAlAs/InP(001) coupled quantum dots-quantum well structure emitting at 1.55 μm

Carrier relaxation dynamics in InAs/GaInAsP/InP(001) quantum dashes emitting near 1.55 μm

article

Carrier transfer in the GaAs-based tunnel injection quantum well-quantum dots structures

Confinement regime in self-assembled InAs/InAlGaAs/InP quantum dashes determined from exciton and biexciton recombination kinetics

Contactless electromodulation spectroscopy of AlGaN∕GaN heterostructures with a two-dimensional electron gas: A comparison of photoreflectance and contactless electroreflectance

Contactless electroreflectance, photoluminescence and time-resolved photoluminescence of GaInNAs quantum wells obtained by the MBE method with N-irradiation

Control of Dynamic Properties of InAs/InAlGaAs/InP Hybrid Quantum Well-Quantum Dot Structures Designed as Active Parts of 1.55 μm Emitting Lasers

Controlled synthesis of tuned bandgap nanodimensional alloys of PbS(x)Se(1-x).

scientific article published on 21 March 2011

Dynamics of localized excitons in Ga0.69In0.31N0.015As0.985/GaAs quantum well: Experimental studies and Monte-Carlo simulations

article

Electron and hole spins in InP/(Ga,In)P self-assembled quantum dots

scholarly article in Physical Review B, vol. 86 no. 12, September 2012

Enhancement of photoluminescence from GaInNAsSb quantum wells upon annealing: improvement of material quality and carrier collection by the quantum well

scientific article published on 10 January 2013

Erratum: Long-lived electron spin coherence in CdSe/Zn(S,Se) self-assembled quantum dots [Phys. Rev. B84, 085304 (2011)]

scholarly article published in Physical Review B

Exciton and biexciton dynamics in single self-assembled InAs/InGaAlAs/InP quantum dash emitting near 1.55 μm

article

Exciton kinetics and few particle effects in self-assembled GaAs-based quantum dashes

article published in 2010

Exciton spin relaxation in InAs/InGaAlAs/InP(001) quantum dashes emitting near 1.55μm

Excitonic complexes in InGaAs/GaAs quantum dash structures

Ghost Branch Photoluminescence From a Polariton Fluid Under Nonresonant Excitation.

scientific article published on 26 October 2015

Growth and characterization of InGaN for photovoltaic devices

article published in 2011

Growth and characterization of ingan for photovoltaic devices

Impact of the localized wetting layer states on carrier relaxation processes in GaAs-based quantum dash structures

Impact of wetting-layer density of states on the carrier relaxation process in low indium content self-assembled (In,Ga)As/GaAs quantum dots

scholarly article in Physical Review B, vol. 87 no. 12, March 2013

Influence of Pressure-Induced Transition from Nanocrystals to Nanoceramic Form on Optical Properties of Ce-Doped Y3Al5O12

Influence of electronic coupling on the radiative lifetime in the (In,Ga)As/GaAs quantum dot–quantum well system

scholarly article in Physical Review B, vol. 85 no. 12, March 2012

Influence of non-radiative recombination on photoluminescence decay time in GaInNAs quantum wells with Ga- and In-rich environments of nitrogen atoms

Influence of quantum well inhomogeneities on absorption, spontaneous emission, photoluminescence decay time, and lasing in polar InGaN quantum wells emitting in the blue-green spectral region

scientific article published on 5 September 2013

Investigation of built-in electric fields in AlGaN/GaN heterostructures grown on misoriented 4H-SiC substrate by contactless electroreflectance

Investigations of AlGaN/GaN field-effect transistor structures by photoreflectance spectroscopy

article

Investigations of GaN surface quantum well in AlGaN∕GaN transistor heterostructures by contactless electroreflectance spectroscopy

article

Lateral carrier diffusion in InGaAs/GaAs coupled quantum dot-quantum well system

Long-lived electron spin coherence in CdSe/Zn(S,Se) self-assembled quantum dots

scholarly article in Physical Review B, vol. 84 no. 8, August 2011

Magnetic field control of the neutral and charged exciton fine structure in single quantum dashes emitting at 1.55 μm

Optical investigations of two dimensional electron gas in the AlGaN/GaN heterostructures

Optical properties and energy transfer in InGaAsN quantum well - InAs quantum dots tunnel injection structures for 1.3 μm emission

Optically pumped 500 nm InGaN green lasers grown by plasma-assisted molecular beam epitaxy

Photoluminescence from GaN nanopowder: The size effect associated with the surface-to-volume ratio

Photoreflectance investigations of AlGaN/GaN heterostructures with a two dimensional electron gas

Photoreflectance investigations of a donor-related transition in AlGaN∕GaN transistor structures

article

Photoreflectance study of p-type GaN layers

Properties of InGaAlAs/AlGaAs quantum dots for single photon emission in the near infrared and visible spectral range

article published in 2013

Relaxation Oscillations and Ultrafast Emission Pulses in a Disordered Expanding Polariton Condensate

scientific article

Room Temperature Carrier Kinetics in the W-type GaInAsSb/InAs/AlSb Quantum Well Structure Emitting in Mid-Infrared Spectral Range

Room temperature free carrier tunneling in dilute nitride based quantum well - quantum dot tunnel injection system for 1.3 μm

Screening effect in contactless electroreflectance spectroscopy observed for AlGaN/GaN heterostructures with two dimensional electron gas

Single photon emission at 1.55 μm from charged and neutral exciton confined in a single quantum dash

article by Ł. Dusanowski et al published 14 July 2014 in Applied Physics Letters

Single photon emission in the red spectral range from a GaAs-based self-assembled quantum dot

article published in 2012

Single photon emission up to liquid nitrogen temperature from charged excitons confined in GaAs-based epitaxial nanostructures ⬇️

Single-photon emission of InAs/InP quantum dashes at 1.55 μm and temperatures up to 80 K

Spin Coherence of Holes in GaAs/AlGaAs Quantum Wells

Spin Coherence of Holes inGaAs/(Al,Ga)AsQuantum Wells

scientific article published in Physical Review Letters

Study of the activation process of Mg dopant in GaN:Mg layers

Theoretical simulations of radiative recombination time in polar InGaN quantum wells

Thick GaN Layers Deposited by Hydride Vapour Phase Epitaxy

Time Resolved Photoluminescence Study of the Wide (Cd,Mn)Te/(Cd,Mg)Te Quantum Well

Time resolved photoluminescence of In(N)As quantum dots embedded in GaIn(N)As/GaAs quantum well

Time-resolved photoluminescence spectroscopy of an InGaAs/GaAs quantum well-quantum dots tunnel injection structure

Time-resolved photoluminescence studies of annealed 1.3-μm GaInNAsSb quantum wells

scientific article published on 17 February 2014

Time-resolved photoluminescence studies of the optical quality of InGaN/GaN multi-quantum well grown by MOCVD—antimony surfactant effect

scholarly article by Michał Baranowski et al published 4 September 2012 in Semiconductor Science and Technology

Tunnel injection structures based on InGaAs/GaAs quantum dots: optical properties and energy structure