List of works - Jonas Lähnemann

Absence of Quantum-Confined Stark Effect in GaN Quantum Disks Embedded in (Al,Ga)N Nanowires Grown by Molecular Beam Epitaxy

scientific article published on 14 August 2019

Acceptor and compensating donor doping of single crystalline SnO (001) films grown by molecular beam epitaxy and its perspectives for optoelectronics and gas-sensing

scientific article published in 2023

Bandgap widening and behavior of Raman-active phonon modes of cubic single-crystalline (In,Ga)2O3 alloy films

scientific article published in 2021

Beam damage of single semiconductor nanowires during X-ray nanobeam diffraction experiments

scientific article published on 12 August 2020

Bias-Controlled Spectral Response in GaN/AlN Single-Nanowire Ultraviolet Photodetectors

scientific article published on 14 June 2017

Coexistence of quantum-confined Stark effect and localized states in an (In,Ga)N/GaN nanowire heterostructure

scholarly article in Physical Review B, vol. 84 no. 15, October 2011

Comparison of the Luminous Efficiencies of Ga- and N-PolarInxGa1−xN/InyGa1−yNQuantum Wells Grown by Plasma-Assisted Molecular Beam Epitaxy ⬇️

Continuous-Flow MOVPE of Ga-Polar GaN Column Arrays and Core–Shell LED Structures

Continuous-flux MOVPE growth of position-controlled N-face GaN nanorods and embedded InGaN quantum wells

scientific article published on 06 July 2010

Correction to Absence of Quantum-Confined Stark Effect in GaN Quantum Disks Embedded in (Al,Ga)N Nanowires Grown by Molecular Beam Epitaxy

scientific article published on 14 August 2020

Correlated Nanoscale Analysis of the Emission from Wurtzite versus Zincblende (In,Ga)As/GaAs Nanowire Core-Shell Quantum Wells

scientific article published on 05 June 2019

Correlated and in-situ electrical transmission electron microscopy studies and related membrane-chip fabrication

scientific article published on 05 June 2020

Correlation between In content and emission wavelength of In(x)Ga(1-x)N/GaN nanowire heterostructures.

scientific article published on 19 October 2012

Crystal Phase Quantum Well Emission with Digital Control.

scientific article published on 11 September 2017

Current path in light emitting diodes based on nanowire ensembles

scientific article published on 23 October 2012

Direct experimental determination of the spontaneous polarization of GaN

scholarly article in Physical Review B, vol. 86 no. 8, August 2012

Distribution of structural domains in MnAs layers grown on GaAs substrates

Effect of Ge-doping on the short-wave, mid- and far-infrared intersubband transitions in GaN/AlGaN heterostructures

Effect of doping on the far-infrared intersubband transitions in nonpolar m-plane GaN/AlGaN heterostructures

scientific article published on 23 February 2016

Effect of growth temperature on the structural, morphological and magnetic properties of Fe films on GaN(0001)

Effect of the nanowire diameter on the linearity of the response of GaN-based heterostructured nanowire photodetectors.

scientific article published on 20 March 2018

Electroluminescence and current-voltage measurements of single-(In,Ga)N/GaN-nanowire light-emitting diodes in a nanowire ensemble

scientific article published on 05 June 2019

Epitaxial Interfaces between Crystallographically Mismatched Materials

scientific article published on 08 July 2011

Formation of High-Quality GaN Microcrystals by Pendeoepitaxial Overgrowth of GaN Nanowires on Si(111) by Molecular Beam Epitaxy

GaN and ZnO nanostructures

III-NITRIDE NANOSTRUCTURES FOR INTERSUBBAND OPTOELECTRONICS

Impact of Cu-rich growth on the CuIn1−xGaxSe2 surface morphology and related solar cells behaviour

Integration of GaN Crystals on Micropatterned Si(0 0 1) Substrates by Plasma-Assisted Molecular Beam Epitaxy

Interface Recombination in Ga- and N-Polar GaN/(Al,Ga)N Quantum Wells Grown by Molecular Beam Epitaxy

scientific article published in 2022

Intersubband Optoelectronics Using III-Nitride Semiconductors

Intersubband transitions in nonpolar GaN/Al(Ga)N heterostructures in the short- and mid-wavelength infrared regions

article published in 2015

Investigation on the origin of luminescence quenching in N-polar (In,Ga)N multiple quantum wells

Localization and defects in axial (In,Ga)N/GaN nanowire heterostructures investigated by spatially resolved luminescence spectroscopy ⬇️

Luminescence associated with stacking faults in GaN ⬇️

article published in 2014

Luminescence of GaAs nanowires consisting of wurtzite and zinc-blende segments

scholarly article in Physical Review B, vol. 85 no. 4, January 2012

Luminescent Defects in a Few-Layer h -BN Film Grown by Molecular Beam Epitaxy

Luminescent N-polar (In,Ga)N/GaN quantum wells achieved by plasma-assisted molecular beam epitaxy at temperatures exceeding 700 °C

Metal-Exchange Catalysis in the Growth of Sesquioxides: Towards Heterostructures of Transparent Oxide Semiconductors

scientific article published on 7 November 2017

N-face GaN nanorods: Continuous-flux MOVPE growth and morphological properties

Near- and mid-infrared intersubband absorption in top-down GaN/AlN nano- and micro-pillars

scientific article published on 30 November 2018

Near-Infrared Intersubband Photodetection in GaN/AlN Nanowires

scientific article

Nitride nanowire structures for LED applications

Nonpolarm-plane GaN/AlGaN heterostructures with intersubband transitions in the 5–10 THz band

scientific article published on 05 October 2015

Optical switching and related structural properties of epitaxial Ge2Sb2Te5 films

Photoelectrochemical Properties of (In,Ga)N Nanowires for Water Splitting Investigated by in Situ Electrochemical Mass Spectroscopy

scientific article published in 2013

Photoelectrochemical Properties of GaN Photoanodes with Cobalt Phosphate Catalyst for Solar Water Splitting in Neutral Electrolyte

scholarly article by Jumpei Kamimura et al published 6 June 2017 in Journal of Physical Chemistry C

Plasma-assisted molecular beam epitaxy of NiO on GaN(00.1)

scientific article published in 2020

Quenching of the luminescence intensity of GaN nanowires under electron beam exposure: impact of C adsorption on the exciton lifetime