List of works - Sergio Fernández-Garrido

Absence of Quantum-Confined Stark Effect in GaN Quantum Disks Embedded in (Al,Ga)N Nanowires Grown by Molecular Beam Epitaxy

scientific article published on 14 August 2019

Columnar AlGaN/GaN nanocavities with AlN/GaN Bragg reflectors grown by molecular beam epitaxy on Si(111)

scientific article published on 12 April 2005

Comparison of the Luminous Efficiencies of Ga- and N-PolarInxGa1−xN/InyGa1−yNQuantum Wells Grown by Plasma-Assisted Molecular Beam Epitaxy ⬇️

Compatibility of the selective area growth of GaN nanowires on AlN-buffered Si substrates with the operation of light emitting diodes.

scientific article

Composition and luminescence of AlInGaN layers grown by plasma-assisted molecular beam epitaxy

article

Correction to Absence of Quantum-Confined Stark Effect in GaN Quantum Disks Embedded in (Al,Ga)N Nanowires Grown by Molecular Beam Epitaxy

scientific article published on 14 August 2020

Correlating composition and luminescence in AlInGaN epilayers

article

Correlation between the structural and optical properties of spontaneously formed GaN nanowires: a quantitative evaluation of the impact of nanowire coalescence. ⬇️

scientific article published on 20 October 2014

Crystal-Phase Quantum Wires: One-Dimensional Heterostructures with Atomically Flat Interfaces

scientific article published on 19 December 2017

Epitaxial Growth of GaN Nanowires with High Structural Perfection on a Metallic TiN Film

scientific article

Improved control over spontaneously formed GaN nanowires in molecular beam epitaxy using a two-step growth process. ⬇️

scientific article published on 12 October 2015

In situ GaN decomposition analysis by quadrupole mass spectrometry and reflection high-energy electron diffraction

article

Inhomogeneous strain in GaN nanowires determined from x-ray diffraction peak profiles

scholarly article in Physical Review B, vol. 86 no. 11, September 2012

Insight into the compositional and structural nano features of AlN/GaN DBRs by EELS-HAADF.

scientific article

Integration of GaN Crystals on Micropatterned Si(0 0 1) Substrates by Plasma-Assisted Molecular Beam Epitaxy

Molecular Beam Epitaxy of GaN Nanowires on Epitaxial Graphene

scientific article published on 27 June 2017

Monitoring the formation of GaN nanowires in molecular beam epitaxy by polarization-resolved optical reflectometry

scientific article published in 2018

Monitoring the formation of nanowires by line-of-sight quadrupole mass spectrometry: a comprehensive description of the temporal evolution of GaN nanowire ensembles

scientific article published on 17 February 2015

Non-destructive assessment of the polarity of GaN nanowire ensembles using low-energy electron diffraction and x-ray photoelectron diffraction

Nucleation, Growth, and Bundling of GaN Nanowires in Molecular Beam Epitaxy: Disentangling the Origin of Nanowire Coalescence.

scientific article published on 11 May 2016

Observation of Dielectrically Confined Excitons in Ultrathin GaN Nanowires up to Room Temperature.

scientific article published on 16 December 2015

Optoelectronic properties of InAlN/GaN distributed bragg reflector heterostructure examined by valence electron energy loss spectroscopy.

scientific article published on 12 October 2012

Polarity-Induced Selective Area Epitaxy of GaN Nanowires

scientific article published on 8 December 2016

Quantitative evaluation of the broadening of x-ray diffraction, Raman, and photoluminescence lines by dislocation-induced strain in heteroepitaxial GaN films

Self-assembled growth of GaN nanowires on amorphous Al x O y : from nucleation to the formation of dense nanowire ensembles.

scientific article published on 29 June 2016

Self-regulated radius of spontaneously formed GaN nanowires in molecular beam epitaxy.

scientific article published on 17 June 2013

Spontaneous nucleation and growth of GaN nanowires: the fundamental role of crystal polarity.

scientific article published on 9 November 2012

Stacking faults as quantum wells in nanowires: Density of states, oscillator strength, and radiative efficiency ⬇️

scholarly article in Physical Review B, vol. 90 no. 19, November 2014

List of works by Sergio Fernández-Garrido

Absence of Quantum-Confined Stark Effect in GaN Quantum Disks Embedded in (Al,Ga)N Nanowires Grown by Molecular Beam Epitaxy

Columnar AlGaN/GaN nanocavities with AlN/GaN Bragg reflectors grown by molecular beam epitaxy on Si(111)

Comparison of the Luminous Efficiencies of Ga- and N-PolarInxGa1−xN/InyGa1−yNQuantum Wells Grown by Plasma-Assisted Molecular Beam Epitaxy ⬇️

Compatibility of the selective area growth of GaN nanowires on AlN-buffered Si substrates with the operation of light emitting diodes.

Composition and luminescence of AlInGaN layers grown by plasma-assisted molecular beam epitaxy

Correction to Absence of Quantum-Confined Stark Effect in GaN Quantum Disks Embedded in (Al,Ga)N Nanowires Grown by Molecular Beam Epitaxy

Correlating composition and luminescence in AlInGaN epilayers

Correlation between the structural and optical properties of spontaneously formed GaN nanowires: a quantitative evaluation of the impact of nanowire coalescence. ⬇️

Crystal-Phase Quantum Wires: One-Dimensional Heterostructures with Atomically Flat Interfaces

Epitaxial Growth of GaN Nanowires with High Structural Perfection on a Metallic TiN Film

Improved control over spontaneously formed GaN nanowires in molecular beam epitaxy using a two-step growth process. ⬇️

In situ GaN decomposition analysis by quadrupole mass spectrometry and reflection high-energy electron diffraction

Inhomogeneous strain in GaN nanowires determined from x-ray diffraction peak profiles

Insight into the compositional and structural nano features of AlN/GaN DBRs by EELS-HAADF.

Integration of GaN Crystals on Micropatterned Si(0 0 1) Substrates by Plasma-Assisted Molecular Beam Epitaxy

Molecular Beam Epitaxy of GaN Nanowires on Epitaxial Graphene

Monitoring the formation of GaN nanowires in molecular beam epitaxy by polarization-resolved optical reflectometry

Monitoring the formation of nanowires by line-of-sight quadrupole mass spectrometry: a comprehensive description of the temporal evolution of GaN nanowire ensembles

Non-destructive assessment of the polarity of GaN nanowire ensembles using low-energy electron diffraction and x-ray photoelectron diffraction

Nucleation, Growth, and Bundling of GaN Nanowires in Molecular Beam Epitaxy: Disentangling the Origin of Nanowire Coalescence.

Observation of Dielectrically Confined Excitons in Ultrathin GaN Nanowires up to Room Temperature.

Optoelectronic properties of InAlN/GaN distributed bragg reflector heterostructure examined by valence electron energy loss spectroscopy.

Polarity-Induced Selective Area Epitaxy of GaN Nanowires

Quantitative evaluation of the broadening of x-ray diffraction, Raman, and photoluminescence lines by dislocation-induced strain in heteroepitaxial GaN films

Self-assembled growth of GaN nanowires on amorphous Al x O y : from nucleation to the formation of dense nanowire ensembles.

Self-regulated radius of spontaneously formed GaN nanowires in molecular beam epitaxy.

Spontaneous nucleation and growth of GaN nanowires: the fundamental role of crystal polarity.

Stacking faults as quantum wells in nanowires: Density of states, oscillator strength, and radiative efficiency ⬇️