List of works - Oliver Brandt

Absence of Quantum-Confined Stark Effect in GaN Quantum Disks Embedded in (Al,Ga)N Nanowires Grown by Molecular Beam Epitaxy

scientific article published on 14 August 2019

Analysis of reciprocal space maps of GaN(0001) films grown by molecular beam epitaxy

Atomistic description of wave function localization effects in InxGa1-xN alloys and quantum wells

Breakdown of continuum elasticity theory in the limit of monatomic films

scientific article published on 01 March 1992

Broad Band Light Absorption and High Photocurrent of (In,Ga)N Nanowire Photoanodes Resulting from a Radial Stark Effect.

scientific article

Coexistence of quantum-confined Stark effect and localized states in an (In,Ga)N/GaN nanowire heterostructure

scholarly article in Physical Review B, vol. 84 no. 15, October 2011

Collector phase transitions during vapor-solid-solid nucleation of GaN nanowires

scientific article published in September 2010

Colossal magnetic moment of Gd in GaN.

scientific article published on 27 January 2005

Comparison of the Luminous Efficiencies of Ga- and N-PolarInxGa1−xN/InyGa1−yNQuantum Wells Grown by Plasma-Assisted Molecular Beam Epitaxy ⬇️

Compatibility of the selective area growth of GaN nanowires on AlN-buffered Si substrates with the operation of light emitting diodes

scientific article

Correction to Absence of Quantum-Confined Stark Effect in GaN Quantum Disks Embedded in (Al,Ga)N Nanowires Grown by Molecular Beam Epitaxy

scientific article published on 14 August 2020

Correlation between In content and emission wavelength of In(x)Ga(1-x)N/GaN nanowire heterostructures.

scientific article published on 19 October 2012

Correlation between the structural and optical properties of spontaneously formed GaN nanowires: a quantitative evaluation of the impact of nanowire coalescence ⬇️

scientific article published on 20 October 2014

Corrigendum: Optical properties of GaN nanowires grown on chemical vapor deposited-graphene (2019 Nanotechnology 30 214005)

scientific article published on 30 July 2020

Crystal-Phase Quantum Wires: One-Dimensional Heterostructures with Atomically Flat Interfaces

scientific article published on 19 December 2017

Cubic (In,Ga)N layers grown on GaAs(001) by dc plasma-assisted molecular beam epitaxy

Current path in light emitting diodes based on nanowire ensembles

scientific article published on 23 October 2012

Determination of the lateral periodicity of nanometer quantum dot arrays by triple crystal diffractometry

Direct comparison of catalyst-free and catalyst-induced GaN nanowires

Direct experimental determination of the spontaneous polarization of GaN

scholarly article in Physical Review B, vol. 86 no. 8, August 2012

Drastically enhanced cation incorporation in the epitaxy of oxides due to formation and evaporation of suboxides from elemental sources

scientific article published in 2021

Effect of growth temperature on the structural, morphological and magnetic properties of Fe films on GaN(0001)

Effect of surface roughness, chemical composition, and native oxide crystallinity on the orientation of self-assembled GaN nanowires on Ti foils.

scientific article

Efficient methodology to correlate structural with optical properties of GaAs nanowires based on scanning electron microscopy

scientific article published on 2 August 2017

Elastic versus Plastic Strain Relaxation in Coalesced GaN Nanowires: An X-Ray Diffraction Study ⬇️

Electroluminescence and current-voltage measurements of single-(In,Ga)N/GaN-nanowire light-emitting diodes in a nanowire ensemble

scientific article published on 05 June 2019

Epitaxial Growth of GaN Nanowires with High Structural Perfection on a Metallic TiN Film

scientific article

Epitaxial Interfaces between Crystallographically Mismatched Materials

scientific article published on 08 July 2011

Epitaxial orientation of MnAs layers grown on GaAs surfaces by means of solid-state crystallization

scholarly article in Physical Review B, vol. 78 no. 6, August 2008

Erratum: “Growth of M-plane MnAs on GaAs(111)B by molecular beam epitaxy” [Appl. Phys. Lett. 92, 101918 (2008)]

scholarly article published in Applied Physics Letters

Evidence for superradiant decay of excitons in InAs quantum sheets

scientific article published on 01 February 1992

Exciton localization in submonolayer InAs/GaAs multiple quantum wells

scientific article published on 01 August 1990

Excitonic Aharonov-Bohm Oscillations in Core-Shell Nanowires

scientific article published on 20 November 2018

Excitons in InAs/GaAs submonolayer quantum wells

scientific article published on 01 June 1991

Formation and morphology of InAs/GaAs heterointerfaces

scientific article published on 01 April 1992

Formation of High-Quality GaN Microcrystals by Pendeoepitaxial Overgrowth of GaN Nanowires on Si(111) by Molecular Beam Epitaxy

Growth of M-plane MnAs on GaAs(111)B by molecular beam epitaxy

article published in 2008

Growth of cubic GaN on Si(001) by plasma-assisted MBE

Heavy- and light-hole character of optical transitions in InAs/GaAs single-monolayer quantum wells

scientific article published on 01 February 1992

Identification of optical transitions in cubic and hexagonal GaN by spatially resolved cathodoluminescence

scientific article published on 01 January 1996

Impact of Random Dopant Fluctuations on the Electronic Properties of In(x)Ga(1-x)N/GaN Axial Nanowire Heterostructures

scientific article published on 8 June 2015

Impact of recombination centers on the spontaneous emission of semiconductors under steady-state and transient conditions

scientific article published on 01 August 1996

Improved control over spontaneously formed GaN nanowires in molecular beam epitaxy using a two-step growth process ⬇️

scientific article published on 12 October 2015

In surface segregation in M-plane (In,Ga)N/GaN multiple quantum well structures

InAs quantum dots in a single-crystal GaAs matrix

scientific article published on 01 October 1991

Influence of strain relaxation in axial [Formula: see text] nanowire heterostructures on their electronic properties.

scientific article published on 4 May 2017

Inhomogeneous strain in GaN nanowires determined from x-ray diffraction peak profiles

scholarly article in Physical Review B, vol. 86 no. 11, September 2012

Integration of GaN Crystals on Micropatterned Si(0 0 1) Substrates by Plasma-Assisted Molecular Beam Epitaxy

Interface Recombination in Ga- and N-Polar GaN/(Al,Ga)N Quantum Wells Grown by Molecular Beam Epitaxy

scientific article published in 2022

Interfacial reactions during the molecular beam epitaxy of GaN nanowires on Ti/Al2O3

scientific article published on 01 March 2019

Investigation on the origin of luminescence quenching in N-polar (In,Ga)N multiple quantum wells

Localization and defects in axial (In,Ga)N/GaN nanowire heterostructures investigated by spatially resolved luminescence spectroscopy ⬇️

Long-wavelength (Ga, In)Sb/GaSb strained quantum well lasers grown by molecular beam epitaxy

Luminescence associated with stacking faults in GaN ⬇️

article published in 2014

Luminescence of GaAs nanowires consisting of wurtzite and zinc-blende segments

scholarly article in Physical Review B, vol. 85 no. 4, January 2012

Luminescent N-polar (In,Ga)N/GaN quantum wells achieved by plasma-assisted molecular beam epitaxy at temperatures exceeding 700 °C

Luminous efficiency of axial In(x)Ga(1-x)N/GaN nanowire heterostructures: interplay of polarization and surface potentials.

scientific article

Macro- and micro-strain in GaN nanowires on Si(111).

scientific article published on 21 June 2011

Metal-Exchange Catalysis in the Growth of Sesquioxides: Towards Heterostructures of Transparent Oxide Semiconductors

scientific article published on 7 November 2017

Molecular Beam Epitaxy of GaN Nanowires on Epitaxial Graphene

scientific article published on 27 June 2017

Molecular beam epitaxy of single crystalline GaN nanowires on a flexible Ti foil

scientific article published in 2016

Monitoring the formation of GaN nanowires in molecular beam epitaxy by polarization-resolved optical reflectometry

scientific article published in 2018

Monitoring the formation of nanowires by line-of-sight quadrupole mass spectrometry: a comprehensive description of the temporal evolution of GaN nanowire ensembles

scientific article published on 17 February 2015

Monodisperse (In, Ga)N insertions in catalyst-free-grown GaN(0001) nanowires

scientific article published on 11 August 2011

Nanowires Bending over Backward from Strain Partitioning in Asymmetric Core-Shell Heterostructures.

scientific article published on 23 March 2018

Nitride nanowire structures for LED applications

Nitride semiconductors free of electrostatic fields for efficient white light-emitting diodes

scientific article published in August 2000

Non-destructive assessment of the polarity of GaN nanowire ensembles using low-energy electron diffraction and x-ray photoelectron diffraction

Nucleation, Growth, and Bundling of GaN Nanowires in Molecular Beam Epitaxy: Disentangling the Origin of Nanowire Coalescence.

scientific article published on 11 May 2016

Observation of Dielectrically Confined Excitons in Ultrathin GaN Nanowires up to Room Temperature.

scientific article published on 16 December 2015

Optical properties of GaN nanowires grown on chemical vapor deposited-graphene

scientific article published on 08 February 2019

Optical properties of a high-quality (311)-oriented GaAs/Al0.33Ga0.67As single quantum well

scientific article published on 01 December 1993

Photoluminescence from strained InAs monolayers in GaAs under pressure

scientific article published on 01 July 1994

Picosecond dynamics of excitons in cubic GaN

scientific article published on 01 October 1995

Piezo-optical effects in GaAs with interspersed (211)-InAs lattice planes

scientific article published on 01 April 1992

Piezoelectric potential in axial (In,Ga)N/GaN nanowire heterostructures

scientific article published on 10 March 2016

Polarity-Induced Selective Area Epitaxy of GaN Nanowires

scientific article published on 8 December 2016

Properties of GaN Nanowires Grown by Molecular Beam Epitaxy

Publisher’s Note: “Ultraviolet light-emitting diodes grown by plasma-assisted molecular beam epitaxy on semipolar GaN (202¯1) substrates” [Appl. Phys. Lett. 102, 111107 (2013)]

article published in 2014

Quantitative evaluation of the broadening of x-ray diffraction, Raman, and photoluminescence lines by dislocation-induced strain in heteroepitaxial GaN films

Quantum Dot Self-Assembly Driven by a Surfactant-Induced Morphological Instability.

scientific article published on 24 August 2017

Quenching of the E2 phonon line in the Raman spectra of wurtzite GaAs nanowires caused by the dielectric polarization contrast

Quenching of the luminescence intensity of GaN nanowires under electron beam exposure: impact of C adsorption on the exciton lifetime

scientific article

Radial Stark Effect in (In,Ga)N Nanowires

scientific article published on 20 January 2016

Radiative decay of excitonic states in bulklike GaAs with a periodic array of InAs lattice planes

scientific article published on 01 December 1990

Recombination processes and photoluminescence intensity in quantum wells under steady-state and transient conditions

scientific article published on 01 March 1995

Self-Assembly of InAs Nanostructures on the Sidewalls of GaAs Nanowires Directed by a Bi Surfactant.

scientific article published on 27 June 2017

Self-assembled growth of GaN nanowires on amorphous Al x O y : from nucleation to the formation of dense nanowire ensembles

scientific article published on 29 June 2016

Self-regulated radius of spontaneously formed GaN nanowires in molecular beam epitaxy.

scientific article published on 17 June 2013

Solid-state lighting: the benefit of disorder

scientific article published on 01 October 2006

Spontaneous nucleation and growth of GaN nanowires: the fundamental role of crystal polarity

scientific article published on 9 November 2012

Stacking faults as quantum wells in nanowires: Density of states, oscillator strength, and radiative efficiency ⬇️

scholarly article in Physical Review B, vol. 90 no. 19, November 2014

State mixing in InAs/GaAs quantum dots at the pressure-induced Gamma -X crossing

scientific article published on 01 December 1994

Strain engineering of nanowire multi-quantum well demonstrated by Raman spectroscopy

scientific article published on 3 September 2013

Structural and Optical Properties of GaN Layers Directly Grown on 6H-SiC(0001) by Plasma-Assisted Molecular Beam Epitaxy

Structural and optical properties of (100) InAs single-monolayer quantum wells in bulklike GaAs grown by molecular-beam epitaxy

scientific article published on 01 June 1990

Structural characterization of thin GaN epilayers directly grown on on-axis 6H–SiC(0001) by plasma-assisted molecular beam epitaxy

article published in 1998

Structural properties of GaN epilayers directly grown on on-axis 6H-SiC(0001) by plasma-assisted MBE

Structural properties of GaN layers on Si(001) grown by plasma-assisted molecular beam epitaxy

Suitability of Au- and self-assisted GaAs nanowires for optoelectronic applications

scientific article published on 14 February 2011

Surface kinetics of zinc-blende (001) GaN

scientific article published on 01 August 1996

Surface reconstructions of zinc-blende GaN/GaAs(001) in plasma-assisted molecular-beam epitaxy

scientific article published on 01 July 1995

Thermal stability of epitaxial Fe films on GaN(0001)

Top-down fabrication of ordered arrays of GaN nanowires by selective area sublimation

Ultraviolet light-emitting diodes grown by plasma-assisted molecular beam epitaxy on semipolar GaN (202¯1) substrates

Understanding peculiarities in the optoelectronic characteristics of light emitting diodes based on (In,Ga)N/GaN nanowires

Valence band discontinuity at a cubic GaN/GaAs heterojunction measured by synchrotron-radiation photoemission spectroscopy

X-ray standing wave and high-resolution x-ray diffraction study of the GaAs/InAs/GaAs(100) heterointerface

scientific article published on 01 October 1993

“Cube-on-hexagon” orientation relationship for Fe onGaN(0001¯): The missing link in bcc/hcp epitaxy

scholarly article in Physical Review B, vol. 82 no. 12, September 2010

List of works by Oliver Brandt

Absence of Quantum-Confined Stark Effect in GaN Quantum Disks Embedded in (Al,Ga)N Nanowires Grown by Molecular Beam Epitaxy

Analysis of reciprocal space maps of GaN(0001) films grown by molecular beam epitaxy

Atomistic description of wave function localization effects in InxGa1-xN alloys and quantum wells

Breakdown of continuum elasticity theory in the limit of monatomic films

Broad Band Light Absorption and High Photocurrent of (In,Ga)N Nanowire Photoanodes Resulting from a Radial Stark Effect.

Coexistence of quantum-confined Stark effect and localized states in an (In,Ga)N/GaN nanowire heterostructure

Collector phase transitions during vapor-solid-solid nucleation of GaN nanowires

Colossal magnetic moment of Gd in GaN.

Comparison of the Luminous Efficiencies of Ga- and N-PolarInxGa1−xN/InyGa1−yNQuantum Wells Grown by Plasma-Assisted Molecular Beam Epitaxy ⬇️

Compatibility of the selective area growth of GaN nanowires on AlN-buffered Si substrates with the operation of light emitting diodes

Correction to Absence of Quantum-Confined Stark Effect in GaN Quantum Disks Embedded in (Al,Ga)N Nanowires Grown by Molecular Beam Epitaxy

Correlation between In content and emission wavelength of In(x)Ga(1-x)N/GaN nanowire heterostructures.

Correlation between the structural and optical properties of spontaneously formed GaN nanowires: a quantitative evaluation of the impact of nanowire coalescence ⬇️

Corrigendum: Optical properties of GaN nanowires grown on chemical vapor deposited-graphene (2019 Nanotechnology 30 214005)

Crystal-Phase Quantum Wires: One-Dimensional Heterostructures with Atomically Flat Interfaces

Cubic (In,Ga)N layers grown on GaAs(001) by dc plasma-assisted molecular beam epitaxy

Current path in light emitting diodes based on nanowire ensembles

Determination of the lateral periodicity of nanometer quantum dot arrays by triple crystal diffractometry

Direct comparison of catalyst-free and catalyst-induced GaN nanowires

Direct experimental determination of the spontaneous polarization of GaN

Drastically enhanced cation incorporation in the epitaxy of oxides due to formation and evaporation of suboxides from elemental sources

Effect of growth temperature on the structural, morphological and magnetic properties of Fe films on GaN(0001)

Effect of surface roughness, chemical composition, and native oxide crystallinity on the orientation of self-assembled GaN nanowires on Ti foils.

Efficient methodology to correlate structural with optical properties of GaAs nanowires based on scanning electron microscopy

Elastic versus Plastic Strain Relaxation in Coalesced GaN Nanowires: An X-Ray Diffraction Study ⬇️

Electroluminescence and current-voltage measurements of single-(In,Ga)N/GaN-nanowire light-emitting diodes in a nanowire ensemble

Epitaxial Growth of GaN Nanowires with High Structural Perfection on a Metallic TiN Film

Epitaxial Interfaces between Crystallographically Mismatched Materials

Epitaxial orientation of MnAs layers grown on GaAs surfaces by means of solid-state crystallization

Erratum: “Growth of M-plane MnAs on GaAs(111)B by molecular beam epitaxy” [Appl. Phys. Lett. 92, 101918 (2008)]

Evidence for superradiant decay of excitons in InAs quantum sheets

Exciton localization in submonolayer InAs/GaAs multiple quantum wells

Excitonic Aharonov-Bohm Oscillations in Core-Shell Nanowires

Excitons in InAs/GaAs submonolayer quantum wells

Formation and morphology of InAs/GaAs heterointerfaces

Formation of High-Quality GaN Microcrystals by Pendeoepitaxial Overgrowth of GaN Nanowires on Si(111) by Molecular Beam Epitaxy

Growth of M-plane MnAs on GaAs(111)B by molecular beam epitaxy

Growth of cubic GaN on Si(001) by plasma-assisted MBE

Heavy- and light-hole character of optical transitions in InAs/GaAs single-monolayer quantum wells

Identification of optical transitions in cubic and hexagonal GaN by spatially resolved cathodoluminescence

Impact of Random Dopant Fluctuations on the Electronic Properties of In(x)Ga(1-x)N/GaN Axial Nanowire Heterostructures

Impact of recombination centers on the spontaneous emission of semiconductors under steady-state and transient conditions

Improved control over spontaneously formed GaN nanowires in molecular beam epitaxy using a two-step growth process ⬇️

In surface segregation in M-plane (In,Ga)N/GaN multiple quantum well structures

InAs quantum dots in a single-crystal GaAs matrix

Influence of strain relaxation in axial [Formula: see text] nanowire heterostructures on their electronic properties.

Inhomogeneous strain in GaN nanowires determined from x-ray diffraction peak profiles

Integration of GaN Crystals on Micropatterned Si(0 0 1) Substrates by Plasma-Assisted Molecular Beam Epitaxy

Interface Recombination in Ga- and N-Polar GaN/(Al,Ga)N Quantum Wells Grown by Molecular Beam Epitaxy

Interfacial reactions during the molecular beam epitaxy of GaN nanowires on Ti/Al2O3

Investigation on the origin of luminescence quenching in N-polar (In,Ga)N multiple quantum wells

Localization and defects in axial (In,Ga)N/GaN nanowire heterostructures investigated by spatially resolved luminescence spectroscopy ⬇️

Long-wavelength (Ga, In)Sb/GaSb strained quantum well lasers grown by molecular beam epitaxy

Luminescence associated with stacking faults in GaN ⬇️

Luminescence of GaAs nanowires consisting of wurtzite and zinc-blende segments

Luminescent N-polar (In,Ga)N/GaN quantum wells achieved by plasma-assisted molecular beam epitaxy at temperatures exceeding 700 °C

Luminous efficiency of axial In(x)Ga(1-x)N/GaN nanowire heterostructures: interplay of polarization and surface potentials.

Macro- and micro-strain in GaN nanowires on Si(111).

Metal-Exchange Catalysis in the Growth of Sesquioxides: Towards Heterostructures of Transparent Oxide Semiconductors

Molecular Beam Epitaxy of GaN Nanowires on Epitaxial Graphene

Molecular beam epitaxy of single crystalline GaN nanowires on a flexible Ti foil

Monitoring the formation of GaN nanowires in molecular beam epitaxy by polarization-resolved optical reflectometry

Monitoring the formation of nanowires by line-of-sight quadrupole mass spectrometry: a comprehensive description of the temporal evolution of GaN nanowire ensembles

Monodisperse (In, Ga)N insertions in catalyst-free-grown GaN(0001) nanowires

Nanowires Bending over Backward from Strain Partitioning in Asymmetric Core-Shell Heterostructures.

Nitride nanowire structures for LED applications

Nitride semiconductors free of electrostatic fields for efficient white light-emitting diodes

Non-destructive assessment of the polarity of GaN nanowire ensembles using low-energy electron diffraction and x-ray photoelectron diffraction

Nucleation, Growth, and Bundling of GaN Nanowires in Molecular Beam Epitaxy: Disentangling the Origin of Nanowire Coalescence.

Observation of Dielectrically Confined Excitons in Ultrathin GaN Nanowires up to Room Temperature.

Optical properties of GaN nanowires grown on chemical vapor deposited-graphene

Optical properties of a high-quality (311)-oriented GaAs/Al0.33Ga0.67As single quantum well

Photoluminescence from strained InAs monolayers in GaAs under pressure

Picosecond dynamics of excitons in cubic GaN

Piezo-optical effects in GaAs with interspersed (211)-InAs lattice planes

Piezoelectric potential in axial (In,Ga)N/GaN nanowire heterostructures

Polarity-Induced Selective Area Epitaxy of GaN Nanowires

Properties of GaN Nanowires Grown by Molecular Beam Epitaxy

Publisher’s Note: “Ultraviolet light-emitting diodes grown by plasma-assisted molecular beam epitaxy on semipolar GaN (202¯1) substrates” [Appl. Phys. Lett. 102, 111107 (2013)]