Ab initio and experimental studies of polarization and polarization related fields in nitrides and nitride structures

AlGaN Photodiodes For Monitoring Solar UV Radiation

scholarly article

AlGaN metal–semiconductor–metal photodiodes

AlGaN photodetectors grown on Si(111) by molecular beam epitaxy

AlGaN ultraviolet photodetectors grown by molecular beam epitaxy on Si(111) substrates

AlGaN-based UV photodetectors

article published in 2001

AlGaN-based photodetectors for solar UV applications

AlGaN-based structures on sapphire for visible blind Schottky-barrier UV photodetectors: toward high-performance device applications

AlGaN/AlN quantum dots for UV light emitters

AlN/GaN-superlattice structures for the fabrication of intersubband detectors in the telecom wavelength range

All-dielectric GaN microcavity: Strong coupling and lasing at room temperature

Alloy inhomogeneity and carrier localization in AlGaN sections and AlGaN/AlN nanodisks in nanowires with 240–350 nm emission

AlxGa1−xN:Si Schottky barrier photodiodes with fast response and high detectivity

article

Analysis and modeling of AlxGa1−xN-based Schottky barrier photodiodes

article

Assessment of GaN metal–semiconductor–metal photodiodes for high-energy ultraviolet photodetection

Behavior of phonons in short period GaN-AlN superlattices

Bi-stable behaviour in GaN-based resonant tunnelling diode structures

Bias-Controlled Optical Transitions in GaN/AlN Nanowire Heterostructures

scientific article published on 3 August 2017

Bias-Controlled Spectral Response in GaN/AlN Single-Nanowire Ultraviolet Photodetectors

scientific article published on 14 June 2017

Bragg polariton luminescence from a GaN membrane embedded in all dielectric microcavity

article published in 2011

Brillouin characterization of the acousticwaves phase-velocity in AlxGa1−xN epilayers

Carrier Localization in GaN/AlN Quantum Dots As Revealed by Three-Dimensional Multimicroscopy.

scientific article published on 27 June 2017

Carrier localization in InN/InGaN multiple-quantum wells with high In-content

Characterization of the Resonant Third-Order Nonlinear Susceptibility of Si-Doped GaN–AlN Quantum Wells and Quantum Dots at 1.5 $\mu$m

Charge distribution and vertical electron transport through GaN/AlN/GaN single-barrier structures

Comparison of the structural quality in Ga-face and N-face polarity GaN/AlN multiple-quantum-well structures

article published in 2006

Composition Analysis of III-Nitrides at the Nanometer Scale: Comparison of Energy Dispersive X-ray Spectroscopy and Atom Probe Tomography

scientific article (publication date: December 2016)

Comprehensive overview on elastic strain relaxation mechanisms in nitride heterostructures: Stranski–Krastanow versus Frank–Van der Merwe growth mode

Correlated Electro-Optical and Structural Study of Electrically Tunable Nanowire Quantum Dot Emitters

scientific article published on 23 December 2019

Correlated Structural, Electronic, and Optical Properties of AlN/GaN Multiple Quantum Disks in GaN Nanowires

Correlated and in-situ electrical transmission electron microscopy studies and related membrane-chip fabrication

scientific article published on 05 June 2020

Correlation of Polarity and Crystal Structure with Optoelectronic and Transport Properties of GaN/AlN/GaN Nanowire Sensors

scientific article published on 05 October 2012

Correlation of optical and structural properties of GaN/AlN multi-quantum wells—Ab initio and experimental study

Coupling of intersubband transitions to zone-folded acoustic phonons in a GaN/AlN superlattice

scholarly article in Physical Review B, vol. 85 no. 15, April 2012

Critical Evaluation of Various Spontaneous Polarization Models and Induced Electric Fields in III-Nitride Multi-Quantum Wells

scientific article published on 30 August 2021

Deep levels in MOCVD n-type hexagonal gallium nitride studied by high resolution deep level transient spectroscopy

scholarly article by P Muret et al published May 2001 in Materials Science and Engineering B: Advanced Functional Solid-state Materials

Defect structure in heteroepitaxial semipolar (11\bar {2} 2 ) (Ga, Al)N

scientific article published on 11 August 2010

Dependence of the photovoltaic performance of pseudomorphic InGaN/GaN multiple-quantum-well solar cells on the active region thickness

Design and implementation of bound-to-quasibound GaN/AlGaN photovoltaic quantum well infrared photodetectors operating in the short wavelength infrared range at room temperature

Design of broadband high-efficiency superconducting-nanowire single photon detectors

scholarly article by L Redaelli et al published 6 May 2016 in Superconductor Science and Technology

Design of polarization-insensitive superconducting single photon detectors with high-index dielectrics

scholarly article by L Redaelli et al published 9 January 2017 in Superconductor Science and Technology

Detection of Si doping in the AlN/GaN MQW using Super X - EDS measurements

scientific article published on 30 March 2020

Development of AlInN photoconductors deposited by sputtering

article

Diamond UV detectors for future solar physics missions

Effect of Al incorporation in nonpolar m -plane GaN/AlGaN multi-quantum-wells using plasma-assisted molecular-beam epitaxy

Effect of Bias on the Response of GaN Axial p-n Junction Single-Nanowire Photodetectors

scientific article published on 06 August 2019

Effect of Ge-doping on the short-wave, mid- and far-infrared intersubband transitions in GaN/AlGaN heterostructures

Effect of Si doping on GaN/AlN multiple-quantum-well structures for intersubband optoelectronics at telecommunication wavelengths

scholarly article by F. Guillot et al published October 2006 in Superlattices and Microstructures

Effect of doping on the far-infrared intersubband transitions in nonpolar m-plane GaN/AlGaN heterostructures

scientific article published on 23 February 2016

Effect of doping on the intersubband absorption in Si- and Ge-doped GaN/AlN heterostructures

scientific article published on 08 August 2017

Effect of doping on the mid-infrared intersubband absorption in GaN/AlGaN superlattices grown on Si(111) templates

article published in 2010

Effect of growth temperature on AlGaInN layers: a TEM analysis

Effect of the barrier thickness on the performance of multiple-quantum-well InGaN photovoltaic cells

Effect of the nanowire diameter on the linearity of the response of GaN-based heterostructured nanowire photodetectors.

scientific article published on 20 March 2018

Effect of the quantum well thickness on the performance of InGaN photovoltaic cells

Effects of stacking on the structural and optical properties of self-organized GaN/AlN quantum dots

article published in 2004

Electrical and optical properties of heavily Ge-doped AlGaN

scientific article published on 28 January 2019

Electrically adjustable intersubband absorption of a GaN∕AlN superlattice grown on a transistorlike structure

Electro-optical intersubband modulators at telecommunication wavelengths based on GaN/AlN quantum wells

scholarly article by N. Kheirodin et al published May 2008 in Physica Status Solidi A

Electroabsorption and refractive index modulation induced by intersubband transitions in GaN/AlN heterostructure waveguides

Electron confinement in strongly coupled GaN∕AlN quantum wells

Electronic transport through GaN/AlN single barriers: Effect of polarisation and dislocations

Electrooptical Modulator at Telecommunication Wavelengths Based on GaN–AlN Coupled Quantum Wells

scholarly article by N. Kheirodin et al published May 2008 in IEEE Photonics Technology Letters

Engineering of an insulating buffer and use of AlN interlayers: two optimisations for AlGaN–GaN HEMT-like structures

Enhanced room-temperature mid-ultraviolet emission from AlGaN/AlN Stranski-Krastanov quantum dots

Environmental sensitivity of n-i-n and undoped single GaN nanowire photodetectors

Eu locations in Eu-doped InGaN∕GaN quantum dots

Experimental and first-principles studies of high-pressure effects on the structural, electronic, and optical properties of semiconductors and lanthanide doped solids

Experimental and theoretical analysis of influence of barrier composition on optical properties of GaN/AlGaN multi-quantum wells: Temperature- and pressure-dependent photoluminescence studies

scientific article published in November 2018

Extended Crystallographic Defects in Gallium Nitride

scholarly article published March 2010

Fast AlGaN metal-semiconductor-metal photodetectors grown on Si(111)

Femto-second electron transit time characterization in GaN/AlGaN quantum cascade detector at 1.5 micron

article published in 2011

Ga kinetics in plasma-assisted molecular-beam epitaxy of GaN(112¯2): Effect on the structural and optical properties

GaN Quantum Dots as Optical Transducers in Field Effect Chemical Sensors

GaN quantum dots as optical transducers for chemical sensors

GaN quantum dots by molecular beam epitaxy

GaN quantum dots doped with Eu

GaN quantum dots doped with Tb

GaN-based nanowire photodetectors

GaN-based quantum cascade photodetector with 1.5 [micro sign]m peak detection wavelength

GaN-based quantum dot infrared photodetector operating at 1.38 [micro sign]m

GaN-based solar-ultraviolet detection instrument

scientific article published on 01 August 1998

GaN/AlGaN intersubband optoelectronic devices

GaN/AlGaN intersubband optoelectronic devices at telecommunication wavelengths

scholarly article published 24 January 2009

GaN/AlGaN nanostructures for intersubband optoelectronics

GaN/AlGaN superlattices for optoelectronics in the mid-infrared

GaN/AlGaN waveguide quantum cascade photodetectors at λ ≈ 1.55 μm with enhanced responsivity and ∼40 GHz frequency bandwidth

GaN/AlN electro-optical modulator prototype at telecommunication wavelengths

scholarly article by E. Baumann et al published April 2007 in Physica Status Solidi C: Current Topics in Solid State Physics

GaN/AlN quantum disc single-nanowire photodetectors

GaN/AlN quantum dot photodetectors at 1.3–1.5 μm

GaN/AlN short-period superlattices for intersubband optoelectronics: A systematic study of their epitaxial growth, design, and performance

article by P. K. Kandaswamy et al published November 2008 in Journal of Applied Physics

Gallium kinetics on m-plane GaN

scholarly article by C. B. Lim et al published 10 July 2017 in Applied Physics Letters

Ge doping of GaN beyond the Mott transition

Growth and characterization of polar (0001) and semipolar (11−22) InGaN/GaN quantum dots

Growth kinetics and morphology of high quality AlN grown on Si(111) by plasma-assisted molecular beam epitaxy

Growth kinetics of N-face polarity GaN by plasma-assisted molecular-beam epitaxy

article published in 2004

Growth optimization and doping with Si and Be of high quality GaN on Si(111) by molecular beam epitaxy

High In-content InGaN layers synthesized by plasma-assisted molecular-beam epitaxy: Growth conditions, strain relaxation, and In incorporation kinetics

High Precision, Electrochemical Detection of Reversible Binding of Recombinant Proteins on Wide Bandgap GaN Electrodes Functionalized with Biomembrane Models

High UV/visible contrast photodiodes based on epitaxial lateral overgrown GaN layers

High absorption efficiency and polarization-insensitivity in superconducting-nanowire single-photon detectors

scholarly article published 27 January 2017

High frequency (f=2.37 GHz) room temperature operation of 1.55 [micro sign]m AlN∕GaN-based intersubband detector

article published in 2007

High frequency SAW devices on AlGaN: fabrication, characterization and integration with optoelectronics

High frequency measurements on an AlN∕GaN-based intersubband detector at 1550 and 780nm

High pressure and time resolved studies of optical properties of n-type doped GaN/AlN multi-quantum wells: Experimental and theoretical analysis

High visible rejection AlGaN photodetectors on Si(111) substrates

High-performance GaN p-n junction photodetectors for solar ultraviolet applications

High-quality AlN∕GaN-superlattice structures for the fabrication of narrow-band 1.4 μm photovoltaic intersubband detectors

High-quality NbN nanofilms on a GaN/AlN heterostructure

High-quality visible-blind AlGaN p-i-n photodiodes

article

High-responsivity submicron metal-semiconductor-metal ultraviolet detectors

article published in 2002

High-speed operation of GaN/AlGaN quantum cascade detectors at λ≈1.55 μm

High-speed, low-noise metal–semiconductor–metal ultraviolet photodetectors based on GaN

High-surface-quality nanocrystalline InN layers deposited on GaN templates by RF sputtering

Homogeneous linewidth of the intraband transition at 1.55 μm in GaN/AlN quantum dots

III nitrides and UV detection

III-nitride intersubband photonics

III-nitride nanostructures for optical gas detection and pH sensing

III-nitride semiconductors for intersubband devices

III-nitride semiconductors for intersubband optoelectronics: a review

article

III-nitride-based waveguides for ultrafast all-optical signal processing at 1.55 μm

scholarly article by Laura Monteagudo-Lerma et al published 20 December 2015 in Physica Status Solidi

Identification of III–N nanowire growth kinetics via a marker technique

scientific article published on 05 July 2010

Imageur diamant et nitrures pour l'observation UV du soleil

Impact of recess etching and surface treatments on ohmic contacts regrown by molecular-beam epitaxy for AlGaN/GaN high electron mobility transistors

article

Improved conversion efficiency of as-grown InGaN/GaN quantum-well solar cells for hybrid integration

Improved luminescence and thermal stability of semipolar (11-22) InGaN quantum dots

Improvement of InN layers deposited on Si(111) by RF sputtering using a low-growth-rate InN buffer layer

Improvement of the critical temperature of NbTiN films on III-nitride substrates

In incorporation during the growth of quaternary III-nitride compounds by plasma-assisted molecular beam epitaxy

In situ biasing and off-axis electron holography of a ZnO nanowire

scientific article

In-rich AlxIn1−xN grown by RF-sputtering on sapphire: from closely-packed columnar to high-surface quality compact layers

InGaN/GaN multiple-quantum well heterostructures for solar cells grown by MOVPE: case studies

InGaN/GaN quantum dots as optical probes for the electric field at the GaN/electrolyte interface

Indium kinetics during the plasma-assisted molecular beam epitaxy of semipolar (11−22) InGaN layers

scholarly article by A. Das et al published 3 May 2010 in Applied Physics Letters

Influence of AlN overgrowth on structural properties of GaN quantum wells and quantum dots grown by plasma-assisted molecular beam epitaxy

Influence of deposition conditions on nanocrystalline InN layers synthesized on Si(111) and GaN templates by RF sputtering

Influence of thermal oxidation on the electronic properties of Pt Schottky contacts on GaN grown by molecular-beam epitaxy

Infrared photoluminescence of high In-content InN/InGaN multiple-quantum-wells

article published in 2011

Instantaneous decay rate analysis of time resolved photoluminescence (TRPL): Application to nitrides and nitride structures

scientific article published in May 2020

Interband and intersubband optical characterization of semipolar (112¯2)-oriented GaN/AlN multiple-quantum-well structures

Interfacial structure of semipolar AlN grown on m-plane sapphire by MBE

Internal quantum efficiency of AlGaN/AlN quantum dot superlattices for electron-pumped ultraviolet sources

scientific article published on 22 July 2020

Internal quantum efficiency of III-nitride quantum dot superlattices grown by plasma-assisted molecular-beam epitaxy

Interplay between GaN and AlN sublattices in wurtzite AlxGa1−xN alloys revealed by Raman spectroscopy

Intersubband Transition-Based Processes and Devices in AlN/GaN-Based Heterostructures

article

Intersubband absorption in GaN nanowire heterostructures at mid-infrared wavelengths

scientific article published on 27 June 2018

Intersubband absorption in Si- and Ge-doped GaN/AlN heterostructures in self-assembled nanowire and 2D layers

Intersubband absorptions in doped and undoped GaN/AlN quantum wells at telecommunication wavelengths

scholarly article by A. Helman et al published April 2004 in Physica Status Solidi C: Current Topics in Solid State Physics

Intersubband optics in GaN-based nanostructures - physics and applications

Intersubband resonant enhancement of second-harmonic generation in GaN∕AlN quantum wells

Intersubband spectroscopy of doped and undoped GaN/AlN quantum wells grown by molecular-beam epitaxy

Intersubband spectroscopy probing higher order interminiband transitions in AlN-GaN-based superlattices

Intersubband transitions in nonpolar GaN/Al(Ga)N heterostructures in the short- and mid-wavelength infrared regions

article published in 2015

Intraband absorption in self-assembled Ge-doped GaN/AlN nanowire heterostructures

scientific article published on 18 February 2014

Intraband absorption of doped GaN∕AlN quantum dots at telecommunication wavelengths

scholarly article by Maria Tchernycheva et al published 5 September 2005 in Applied Physics Letters

Intraband emission at λ≈1.48μm from GaN∕AlN quantum dots at room temperature

Intraband photodetection at 1.3–1.5 µm in self-organized GaN/AlN quantum dots

Intrinsic ferromagnetism in wurtzite (Ga,Mn)N semiconductor

scholarly article in Physical Review B, vol. 74 no. 4, July 2006

Investigation of metal–GaN and metal–AlGaN contacts by XPS depth profiles and by electrical measurements

Investigation of the negative differential resistance reproducibility in AlN/GaN double-barrier resonant tunnelling diodes

Latest developments in GaN-based quantum devices for infrared optoelectronics

Long-lived excitons in GaN/AlN nanowire heterostructures

scholarly article in Physical Review B, vol. 91 no. 20, May 2015

Low noise AlGaN metal-semiconductor-metal photodiodes

Low pressure MOVPE grown AlGaN for UV photodetector applications

Low-noise metal-insulator-semiconductor UV photodiodes based on GaN

Luminescence properties of highly Si-doped AlN

article published in 2006

MBE growth of AlN/GaN-based photovoltaic intersubband photodetectors

MBE growth of nitride-based photovoltaic intersubband detectors

Mg doping and its effect on the semipolar GaN(112¯2) growth kinetics

Midinfrared intersubband absorption in GaN/AlGaN superlattices on Si(111) templates

Modeling of the spectral response of AlxGa1−xN Schottky ultraviolet photodetectors

article

Modeling of the spectral response of AlxGa1−xN p-n junction photodetectors

Modification of GaN(0001) growth kinetics by Mg doping

Molecular beam epitaxy of semipolar AlN( $$11\bar{2}2$$ ) and GaN( $$11\bar{2}2$$ ) on m-sapphire

Molecular-beam epitaxial growth and characterization of quaternary III–nitride compounds

Monolithically integrated AlGaN/GaN/AlN-based solar-blind ultraviolet and near-infrared detectors

Monolithically integrated UV/IR-photodetectors based on an AlN/GaN-based superlattice grown on an AlGaN buffer layer

Morphological properties of GaN quantum dots doped with Eu

Morphology and arrangement of InN nanocolumns deposited by radio-frequency sputtering: Effect of the buffer layer

Morphology and origin of V-defects in semipolar (11–22) InGaN

Morphology and strain of self-assembled semipolar GaN quantum dots in (112¯2) AlN

Multi-excitonic emission from Stranski-Krastanov GaN/AlN quantum dots inside a nanoscale tip

Multi-microscopy nanoscale characterization of the doping profile in a hybrid Mg/Ge-doped tunnel junction

scientific article published on 04 June 2020

Nanotechnology for SAW devices on AlN epilayers

scholarly article by T. Palacios et al published May 2002 in Materials Science and Engineering B: Advanced Functional Solid-state Materials

Nanowire photodetectors based on wurtzite semiconductor heterostructures

Near infrared quantum cascade detector in GaN∕AlGaN∕AlN heterostructures

Near- and mid-infrared intersubband absorption in top-down GaN/AlN nano- and micro-pillars

scientific article published on 30 November 2018

Near-Infrared Intersubband Photodetection in GaN/AlN Nanowires

scientific article

Near-infrared intersubband emission from GaN/AlN quantum dots and quantum wells

Negative photoconductivity due to intraband transitions in GaN/AlN quantum dots

New UV detectors for solar observations

New developments for nitride unipolar devices at 1.3–1.5 μm wavelengths

Nitride intersubband devices: prospects and recent developments

Non-linear properties of nitride-based nanostructures for optically controlling the speed of light at 1.5μm

Nonlinear absorption of InN/InGaN multiple-quantum-well structures at optical telecommunication wavelengths

scholarly article by F. B. Naranjo et al published 17 January 2011 in Applied Physics Letters

Nonpolarm-plane GaN/AlGaN heterostructures with intersubband transitions in the 5–10 THz band

scientific article published on 05 October 2015

Novel InN/InGaN multiple quantum well structures for slow-light generation at telecommunication wavelengths

scholarly article by F. B. Naranjo et al published January 2010 in Physica Status Solidi C: Current Topics in Solid State Physics

Observation of hot luminescence and slow inter-sub-band relaxation in Si-doped GaN∕AlxGa1−xN (x=0.11, 0.25) multi-quantum-well structures

article published in 2006

Optical and morphological properties ofGaNquantum dots doped withTm

scholarly article in Physical Review B, vol. 71 no. 11, March 2005

Optical and structural properties of rare earth doped GaN quantum dots

Optical and theoretical study of strong electron coupling in double GaN/AlN quantum wells

Optically nonlinear effects in intersubband transitions of GaN∕AlN-based superlattice structures

article published in 2007

P-i-n InGaN homojunctions (10–40% In) synthesized by plasma-assisted molecular beam epitaxy with extended photoresponse to 600 nm

P-type doping of semipolar GaN(11$ \bar 2 $2) by plasma-assisted molecular-beam epitaxy

PAMBE growth of (112¯2)-oriented GaN/AlN nanostructures on m-sapphire

Performance Improvement of AlN–GaN-Based Intersubband Detectors by Using Quantum Dots

Performance improvement of AlN/GaN-based intersubband detectors thanks to quantum dot active regions

Phase transition by Mg doping of N-face polarity GaN

Photoconductive gain modelling of GaN photodetectors

article

Photocurrent Phenomena in Nanoribbon InAlN/GaN High Electron Mobility Transistors

article

Photocurrent characterization of intraband transition in GaNVAIN quantum dots

Photocurrent spectroscopy of bound-to-bound intraband transitions in GaN/AlN quantum dots

article by A. Vardi et al published 19 October 2009 in Physical Review B

Photodetectors based on intersubband transitions using III-nitride superlattice structures

scientific article

Photovoltaic Response of InGaN/GaN Multiple-Quantum Well Solar Cells

Plasma-assisted MBE growth of (112)-oriented GaN/AlN quantum wells on m-sapphire

Plasma-assisted molecular beam epitaxy of wurtzite GaMnN displaying ferromagnetism assessed by means of X-ray magnetic circular dichroism

Plasma-assisted molecular-beam epitaxy of AlN(112¯2) on m sapphire

Plastic strain relaxation of nitride heterostructures

Polar and semipolar III-nitrides for long wavelength intersubband devices

Polarization fields in GaN/AlN nanowire heterostructures studied by off-axis holography

Polarization-insensitive fiber-coupled superconducting-nanowire single photon detector using a high-index dielectric capping layer

scientific article published on 01 June 2018

Polytype transition of N-face GaN:Mg from wurtzite to zinc-blende

Properties of a hole trap inn-type hexagonal GaN

article published in 2002

Properties of self-assembled Ga-polar and N-polar GaN/AlN quantum dots

Pseudo-square AlGaN/GaN quantum wells for terahertz absorption

Quantitative strain analysis of GaN/AlN quantum dot multilayers

Quantum Transport in GaN/AlN Double-Barrier Heterostructure Nanowires

scientific article published on 01 September 2010

Raman study and theoretical calculations of strain in GaN quantum dot multilayers

scholarly article in Physical Review B, vol. 73 no. 11, March 2006

Raman study of strain in GaN/AlN quantum dot multilayered structures

Rare-earth doped GaN and InGaN quantum dots grown by plasma assisted MBE

Recent progress in growth and physics of GaN/AlN quantum dots

Recent progresses of the BOLD investigation towards UV detectors for the ESA Solar Orbiter

Reduction of the lasing threshold in optically pumped AlGaN/GaN lasers with two-step etched facets

scientific article published in 2022

Resonant Raman scattering in self-assembledGaN∕AlNquantum dots

scholarly article in Physical Review B, vol. 74 no. 7, August 2006

Resonant Tunneling Transport in a GaN/AlN Multiple-Quantum-Well Structure

Responsivity and photocurrent dynamics in single GaN nanowires

article

Room temperature demonstration of GaN∕AlN quantum dot intraband infrared photodetector at fiber-optics communication wavelength

article by A. Vardi et al published 3 April 2006 in Applied Physics Letters

Room temperature intraband Raman emission and ultrafast carrier relaxation in GaN/AlN quantum dots

Room-Temperature Photodetection Dynamics of Single GaN Nanowires

article

Room-temperature intersubband emission of GaN/AlN quantum wells at =2.3 [micro sign]m

Short wavelength (λ=2.13μm) intersubband luminescence from GaN∕AlN quantum wells at room temperature

Short-wave infrared (λ = 3 μm) intersubband polaritons in the GaN/AlN system

Short-wavelength intersubband electroabsorption modulation based on electron tunneling between GaN∕AlN coupled quantum wells

Short-wavelength, mid- and far-infrared intersubband absorption in nonpolar GaN/Al(Ga)N heterostructures

Si-doped AlxGa1-xN photoconductive detectors

article

Si-doped GaN/AlN quantum dot superlattices for optoelectronics at telecommunication wavelengths

scholarly article by F. Guillot et al published May 2006 in Physica Status Solidi A

Si-doped GaN∕AlN quantum dot superlattices for optoelectronics at telecommunication wavelengths

scholarly article by F. Guillot et al published 15 August 2006 in Journal of Applied Physics

Si-interdiffusion in heavily doped AlN-GaN-based quantum well intersubband photodetectors

Single GaN-Based Nanowires for Photodetection and Sensing Applications

Spectroscopy of the electron states in self-organized GaN/AlN quantum dots

Strain distribution in GaN∕AlN quantum-dot superlattices

Strain effects in GaN/AlN multi-quantum-well structures for infrared optoelectronics

Strain effects in GaN/AlN short-period superlattices for intersubband optoelectronics

Strain relaxation in GaN/Al0.1Ga0.9N superlattices for mid-infrared intersubband absorption

Strain relaxation in GaN/AlxGa1-xN superlattices grown by plasma-assisted molecular-beam epitaxy

article published in 2011

Strain relaxation in short-period polar GaN/AlN superlattices

Stranski–Krastanow growth of (112¯2)-oriented GaN/AlN quantum dots

Strong suppression of internal electric field in GaN/AlGaN multi-layer quantum dots in nanowires

Structural and optical properties of rare-earth doped quantum dots grown by plasma-assisted MBE

Structural properties of semipolar InGaN/GaN quantum dot superlattices grown by plasma-assisted MBE

Structure and strain state of polar and semipolar InGaN quantum dots

Structure of GaN quantum dots grown under “modified Stranski–Krastanow” conditions on AlN

article published in 2003

Study of high In-content AlInN deposition on p-Si(111) by RF-sputtering

Submicron technology for III-nitride semiconductors

Suppression of nonradiative processes in long-lived polar GaN/AlN quantum dots

Surfactant effect of In for AlGaN growth by plasma-assisted molecular beam epitaxy

Surfactant effect of gallium during the growth of GaN on AlN(0001¯) by plasma-assisted molecular beam epitaxy

scholarly article by N. Gogneau et al published 23 August 2004 in Applied Physics Letters

Switching of exciton character in double InGaN/GaN quantum wells

scholarly article in Physical Review B, vol. 98 no. 16, October 2018

Systematic experimental and theoretical investigation of intersubband absorption inGaN∕AlNquantum wells

scholarly article in Physical Review B, vol. 73 no. 12, March 2006

Systematic study of near-infrared intersubband absorption of polar and semipolar GaN/AlN quantum wells

THz intersubband transitions in AlGaN/GaN multi-quantum-wells

Temporal dependence of gallium nitride quantum dot cathodoluminescence under weak electron beam excitation

Terahertz absorbing AlGaN/GaN multi-quantum-wells: Demonstration of a robust 4-layer design

article by M. Beeler et al published 26 August 2013 in Applied Physics Letters

Terahertz intersubband absorption in GaN/AlGaN step quantum wells

article by H. Machhadani et al published 8 November 2010 in Applied Physics Letters

The Role of the Built-In Electric Field in Recombination Processes of GaN/AlGaN Quantum Wells: Temperature- and Pressure-Dependent Study of Polar and Non-Polar Structures

scientific article published on 8 April 2022

The effect of the III/V ratio and substrate temperature on the morphology and properties of GaN- and AlN-layers grown by molecular beam epitaxy on Si(1 1 1)

The microstructure and properties of InN layers

Thermal stability of Pt- and Ni-based Schottky contacts on GaN and Al0.31Ga0.69N

Thermal stability of the deep ultraviolet emission from AlGaN/AlN Stranski-Krastanov quantum dots

Third order nonlinear susceptibility of InN at near band-gap wavelengths

Time response analysis of ZnSe-based Schottky barrier photodetectors

article

Two-step method for the deposition of AlN by radio frequency sputtering

scholarly article by L. Monteagudo-Lerma et al published October 2013 in Thin Solid Films

UV Photosensing Characteristics of Nanowire-Based GaN/AlN Superlattices.

scientific article published on 27 April 2016

UV-B irradiance at Madrid during 1996, 1997, and 1998

scholarly article

Ultra-low threshold polariton lasing at room temperature in a GaN membrane microcavity with a zero-dimensional trap

scientific article

Ultra-smooth GaN membranes by photo-electrochemical etching for photonic applications

Ultrafast Fiber Laser Using InN as Saturable Absorber Mirror

Ultrafast relaxation and optical saturation of intraband absorption of GaN/AlN quantum dots

Vertical electron transport study in GaN/AlN/GaN heterostructures

Visible red light emission from Eu-doped GaN quantum dots grown by plasma-assisted MBE

Visible-blindness in photoconductive and photovoltaic AlGaN ultraviolet detectors

Waveguide saturable absorbers at 1.55 μm based on intraband transitions in GaN/AlN QDs.

scientific article published in November 2013

Wet etching of GaN grown by molecular beam epitaxy on Si(111)

article published in 2000

Wide bandgap UV photodetectors: a short review of devices and applications

article

Wide-bandgap semiconductor ultraviolet photodetectors

Widely power-tunable polarization-independent ultrafast mode-locked fiber laser using bulk InN as saturable absorber

scientific article

Wurtzite quantum well structures under high pressure

scientific article published on 7 August 2020