List of works - Stephan Menzel

Analytical analysis of the generic SET and RESET characteristics of electrochemical metallization memory cells

scientific article published on 25 September 2013

Anomalous Resistance Hysteresis in Oxide ReRAM: Oxygen Evolution and Reincorporation Revealed by In Situ TEM.

scientific article

Applicability of Well-Established Memristive Models for Simulations of Resistive Switching Devices

article published in 2014

Compact modeling of CRS devices based on ECM cells for memory, logic and neuromorphic applications

scientific article published on 2 September 2013

Comprehensive modeling of electrochemical metallization memory cells

scientific article published on 07 September 2017

Current channeling along extended defects during electroreduction of SrTiO

scientific article published on 21 February 2019

Determination of the electrostatic potential distribution in Pt/Fe:SrTiO₃/Nb:SrTiO₃ thin-film structures by electron holography

scientific article published on 10 November 2014

Experimental Verification of Uncoupled Memristive Cellular Nonlinear Network by Processing the EDGE Detection Task

scientific article published on 25 January 2024

Exploring Multi-Valued Logic and its Application in Emerging Post-CMOS Technologies

scientific article published on 25 January 2024

Impact of oxygen exchange reaction at the ohmic interface in Ta2O5-based ReRAM devices

scientific article published on 15 August 2016

In-Gap States and Band-Like Transport in Memristive Devices

scientific article published on 27 September 2018

Introduction to new memory paradigms: memristive phenomena and neuromorphic applications

scientific article published on 01 February 2019

In‐Memory Binary Vector–Matrix Multiplication Based on Complementary Resistive Switches

scientific article published in 2020

Low-current operations in 4F(2)-compatible Ta2O5-based complementary resistive switches

scientific article published on 25 September 2015

Metallic filamentary conduction in valence change-based resistive switching devices: the case of TaOx thin film with x∼ 1

scientific article published on 09 September 2019

Nanoionic memristive phenomena in metal oxides: the valence change mechanism

scientific article published in 2021

On the universality of the I-V switching characteristics in non-volatile and volatile resistive switching oxides

scientific article published on 01 February 2019

Oxygen Exchange Processes between Oxide Memristive Devices and Water Molecules

scientific article published on 07 June 2018

Reliability aspects of binary vector-matrix-multiplications using ReRAM devices

scientific article published in 2022

SET kinetics of electrochemical metallization cells: influence of counter-electrodes in SiO2/Ag based systems.

scientific article

Spectroscopic Indications of Tunnel Barrier Charging as the Switching Mechanism in Memristive Devices

Spectroscopic elucidation of ionic motion processes in tunnel oxide-based memristive devices

scientific article published on 01 February 2019

Spectroscopic proof of the correlation between redox-state and charge-carrier transport at the interface of resistively switching Ti/PCMO devices.

scientific article published on 6 April 2014

Stateful Three-Input Logic with Memristive Switches

scientific article published on 10 October 2019

Subfilamentary Networks Cause Cycle-to-Cycle Variability in Memristive Devices

scientific article published on 29 June 2017

Switching kinetics of electrochemical metallization memory cells

scientific article published on 3 April 2013

The ultimate switching speed limit of redox-based resistive switching devices

scientific article published on 01 February 2019

Understanding filamentary growth in electrochemical metallization memory cells using kinetic Monte Carlo simulations

scientific article published on 7 July 2015

Understanding the Coexistence of Two Bipolar Resistive Switching Modes with Opposite Polarity in Pt/TiO2/Ti/Pt Nanosized ReRAM Devices

scientific article published on 23 August 2018

Volatile HRS asymmetry and subloops in resistive switching oxides

scientific article

List of works by Stephan Menzel

Analytical analysis of the generic SET and RESET characteristics of electrochemical metallization memory cells

Anomalous Resistance Hysteresis in Oxide ReRAM: Oxygen Evolution and Reincorporation Revealed by In Situ TEM.

Applicability of Well-Established Memristive Models for Simulations of Resistive Switching Devices

Compact modeling of CRS devices based on ECM cells for memory, logic and neuromorphic applications

Comprehensive modeling of electrochemical metallization memory cells

Current channeling along extended defects during electroreduction of SrTiO

Determination of the electrostatic potential distribution in Pt/Fe:SrTiO₃/Nb:SrTiO₃ thin-film structures by electron holography

Experimental Verification of Uncoupled Memristive Cellular Nonlinear Network by Processing the EDGE Detection Task

Exploring Multi-Valued Logic and its Application in Emerging Post-CMOS Technologies

Impact of oxygen exchange reaction at the ohmic interface in Ta2O5-based ReRAM devices

In-Gap States and Band-Like Transport in Memristive Devices

Introduction to new memory paradigms: memristive phenomena and neuromorphic applications

In‐Memory Binary Vector–Matrix Multiplication Based on Complementary Resistive Switches

Low-current operations in 4F(2)-compatible Ta2O5-based complementary resistive switches

Metallic filamentary conduction in valence change-based resistive switching devices: the case of TaOx thin film with x∼ 1

Nanoionic memristive phenomena in metal oxides: the valence change mechanism

On the universality of the I-V switching characteristics in non-volatile and volatile resistive switching oxides

Oxygen Exchange Processes between Oxide Memristive Devices and Water Molecules

Reliability aspects of binary vector-matrix-multiplications using ReRAM devices

SET kinetics of electrochemical metallization cells: influence of counter-electrodes in SiO2/Ag based systems.

Spectroscopic Indications of Tunnel Barrier Charging as the Switching Mechanism in Memristive Devices

Spectroscopic elucidation of ionic motion processes in tunnel oxide-based memristive devices

Spectroscopic proof of the correlation between redox-state and charge-carrier transport at the interface of resistively switching Ti/PCMO devices.

Stateful Three-Input Logic with Memristive Switches

Subfilamentary Networks Cause Cycle-to-Cycle Variability in Memristive Devices

Switching kinetics of electrochemical metallization memory cells

The ultimate switching speed limit of redox-based resistive switching devices

Understanding filamentary growth in electrochemical metallization memory cells using kinetic Monte Carlo simulations

Understanding the Coexistence of Two Bipolar Resistive Switching Modes with Opposite Polarity in Pt/TiO2/Ti/Pt Nanosized ReRAM Devices

Volatile HRS asymmetry and subloops in resistive switching oxides