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List of works by Thorsten Schultz

A Multifunctional Interlayer for Solution Processed High Performance Indium Oxide Transistors

scientific article published in Scientific Reports

Band Offsets at κ-([Al,In]xGa1-x)2O3/MgO Interfaces

scientific article published on 10 February 2020

Direct determination of monolayer MoS2 and WSe2 exciton binding energies on insulating and metallic substrates

Electronic Properties of a 1D Intrinsic/p-Doped Heterojunction in a 2D Transition Metal Dichalcogenide Semiconductor.

scientific article

Electronic properties of hybrid organic/inorganic semiconductor pn-junctions

scientific article published on 22 November 2018

Energy level tuning at inorganic/organic semiconductor heterojunctions

Growth of Nb-Doped Monolayer WS2 by Liquid-Phase Precursor Mixing

scientific article published on 13 September 2019

Growth of κ-([Al,In]<sub><i>x</i></sub>Ga<sub>1-x</sub>)<sub>2</sub>O<sub>3</sub> Quantum Wells and Their Potential for Quantum-Well Infrared Photodetectors

scientific article published in 2023

Impact of surface states and bulk doping level on hybrid inorganic/organic semiconductor interface energy levels

Importance of Substrate Work Function Homogeneity for Reliable Ionization Energy Determination by Photoelectron Spectroscopy

Microstructure and Elastic Constants of Transition Metal Dichalcogenide Monolayers from Friction and Shear Force Microscopy

scientific article published on 21 August 2018

Morphology-controlled MoS2 by low-temperature atomic layer deposition

scientific article published on 01 October 2020

Reliable Work Function Determination of Multicomponent Surfaces and Interfaces: The Role of Electrostatic Potentials in Ultraviolet Photoelectron Spectroscopy

Strain states and relaxation for $$\alpha$$-(Al$$_x$$Ga$$_{1-x}$$)$$_2$$O$$_3$$ thin films on prismatic planes of $$\alpha$$-Al$$_2$$O$$_3$$ in the full composition range: Fundamental difference of a- and m-epitaxial planes in the manifestation of s

scientific article published in 2021

Surface State Density Determines the Energy Level Alignment at Hybrid Perovskite/Electron Acceptors Interfaces

scientific article published on 7 November 2017

Tin-assisted heteroepitaxial PLD-growth of κ-Ga2O3 thin films with high crystalline quality

Tuning material properties of amorphous zinc oxynitride thin films by magnesium addition

scholarly article

Tuning the work function of GaN with organic molecular acceptors

article