List of works - Fabien C-P Massabuau

A Peeling Approach for Integrated Manufacturing of Large Monolayer h-BN Crystals

article

A comparison of the optical properties of InGaN/GaN multiple quantum well structures grown with and without Si-doped InGaN prelayers

article published in 2016

A study of the inclusion of prelayers in InGaN/GaN single- and multiple-quantum-well structures

Alloy fluctuations at dislocations in III-nitrides: identification and impact on optical properties

Carrier localization in the vicinity of dislocations in InGaN

Cathodoluminescence hyperspectral imaging of trench-like defects in InGaN/GaN quantum well structures

article published in 2014

Characterisation of InGaN by Photoconductive Atomic Force Microscopy

Correlations between the morphology and emission properties of trench defects in InGaN/GaN quantum wells

article published in 2013

Cross-shaped markers for the preparation of site-specific transmission electron microscopy lamellae using focused ion beam techniques

scientific article published on 15 February 2020

Crystalline Interlayers for Reducing the Effective Thermal Boundary Resistance in GaN-on-Diamond

scientific article published on 16 November 2020

Defect structures in (001) zincblende GaN/3C-SiC nucleation layers

Dislocations as channels for the fabrication of sub-surface porous GaN by electrochemical etching

Dislocations in AlGaN: Core Structure, Atom Segregation, and Optical Properties

scientific article published on 14 July 2017

Effect of QW growth temperature on the optical properties of blue and green InGaN/GaN QW structures

Effect of electron blocking layers on the conduction and valence band profiles of InGaN/GaN LEDs

Effect of stacking faults on the photoluminescence spectrum of zincblende GaN

scientific article published on 14 May 2018

Effects of a Si-doped InGaN Underlayer on the Optical Properties of InGaN/GaN Quantum Well Structures with Different Numbers of Quantum Wells

scientific article published on 15 September 2018

Effects of an InGaN prelayer on the properties of InGaN/GaN quantum well structures

Effects of microstructure and growth conditions on quantum emitters in gallium nitride

Effects of quantum well growth temperature on the recombination efficiency of InGaN/GaN multiple quantum wells that emit in the green and blue spectral regions

GaN-on-diamond technology platform: Bonding-free membrane manufacturing process

Indium clustering in a-plane InGaN quantum wells as evidenced by atom probe tomography

scholarly article by Fengzai Tang et al published 16 February 2015 in Applied Physics Letters

Integrated Wafer Scale Growth of Single Crystal Metal Films and High Quality Graphene

scientific article published on 01 October 2020

Investigation of unintentional indium incorporation into GaN barriers of InGaN/GaN quantum well structures

scholarly article by Fabien C-P Massabuau et al published 19 December 2014 in Physica Status Solidi B

Low temperature carrier redistribution dynamics in InGaN/GaN quantum wells

article

Mechanisms preventing trench defect formation in InGaN/GaN quantum well structures using hydrogen during GaN barrier growth

Morphological, structural, and emission characterization of trench defects in InGaN/GaN quantum well structures

Optical and structural properties of dislocations in InGaN

Pure single-photon emission from an InGaN/GaN quantum dot

Redshift and amplitude increase in the dielectric function of corundum-like α-(TixGa1−x)2O3

scientific article published in 2023

Response to “Comment on ‘The effects of Si doping on dislocation movement and tensile stress in GaN films’” [J. Appl. Phys. 109, 073509 (2011)]

Room temperature PL efficiency of InGaN/GaN quantum well structures with prelayers as a function of number of quantum wells

Structure and strain relaxation effects of defects in InxGa1−xN epilayers

The effects of Si doping on dislocation movement and tensile stress in GaN films

The effects of Si-doped prelayers on the optical properties of InGaN/GaN single quantum well structures

The effects of varying threading dislocation density on the optical properties of InGaN/GaN quantum wells

The impact of gross well width fluctuations on the efficiency of GaN-based light emitting diodes

article by Rachel Angharad Oliver et al published 30 September 2013 in Applied Physics Letters

The impact of growth parameters on trench defects in InGaN/GaN quantum wells

article published in 2014

The impact of trench defects in InGaN/GaN light emitting diodes and implications for the “green gap” problem

The negligible effects of miscut on indium aluminium nitride growth

Thermal stress modelling of diamond on GaN/III-Nitride membranes

scholarly article in Carbon, vol. 174, April 2021

Thick, Adherent Diamond Films on AlN with Low Thermal Barrier Resistance

scientific article published on 21 October 2019

Ti Alloyed α-Ga2O3: Route towards Wide Band Gap Engineering

scientific article published on 20 December 2020

List of works by Fabien C-P Massabuau

A Peeling Approach for Integrated Manufacturing of Large Monolayer h-BN Crystals

A comparison of the optical properties of InGaN/GaN multiple quantum well structures grown with and without Si-doped InGaN prelayers

A study of the inclusion of prelayers in InGaN/GaN single- and multiple-quantum-well structures

Alloy fluctuations at dislocations in III-nitrides: identification and impact on optical properties

Carrier localization in the vicinity of dislocations in InGaN

Cathodoluminescence hyperspectral imaging of trench-like defects in InGaN/GaN quantum well structures

Characterisation of InGaN by Photoconductive Atomic Force Microscopy

Correlations between the morphology and emission properties of trench defects in InGaN/GaN quantum wells

Cross-shaped markers for the preparation of site-specific transmission electron microscopy lamellae using focused ion beam techniques

Crystalline Interlayers for Reducing the Effective Thermal Boundary Resistance in GaN-on-Diamond

Defect structures in (001) zincblende GaN/3C-SiC nucleation layers

Dislocations as channels for the fabrication of sub-surface porous GaN by electrochemical etching

Dislocations in AlGaN: Core Structure, Atom Segregation, and Optical Properties

Effect of QW growth temperature on the optical properties of blue and green InGaN/GaN QW structures

Effect of QW growth temperature on the optical properties of blue and green InGaN/GaN QW structures

Effect of electron blocking layers on the conduction and valence band profiles of InGaN/GaN LEDs

Effect of stacking faults on the photoluminescence spectrum of zincblende GaN

Effects of a Si-doped InGaN Underlayer on the Optical Properties of InGaN/GaN Quantum Well Structures with Different Numbers of Quantum Wells

Effects of an InGaN prelayer on the properties of InGaN/GaN quantum well structures

Effects of microstructure and growth conditions on quantum emitters in gallium nitride

Effects of quantum well growth temperature on the recombination efficiency of InGaN/GaN multiple quantum wells that emit in the green and blue spectral regions

GaN-on-diamond technology platform: Bonding-free membrane manufacturing process

Indium clustering in a-plane InGaN quantum wells as evidenced by atom probe tomography

Integrated Wafer Scale Growth of Single Crystal Metal Films and High Quality Graphene

Investigation of unintentional indium incorporation into GaN barriers of InGaN/GaN quantum well structures

Low temperature carrier redistribution dynamics in InGaN/GaN quantum wells

Mechanisms preventing trench defect formation in InGaN/GaN quantum well structures using hydrogen during GaN barrier growth

Morphological, structural, and emission characterization of trench defects in InGaN/GaN quantum well structures

Optical and structural properties of dislocations in InGaN

Pure single-photon emission from an InGaN/GaN quantum dot

Redshift and amplitude increase in the dielectric function of corundum-like α-(Ti<i>x</i>Ga1−<i>x</i>)2O3

Response to “Comment on ‘The effects of Si doping on dislocation movement and tensile stress in GaN films’” [J. Appl. Phys. 109, 073509 (2011)]

Room temperature PL efficiency of InGaN/GaN quantum well structures with prelayers as a function of number of quantum wells

Structure and strain relaxation effects of defects in InxGa1−xN epilayers

The effects of Si doping on dislocation movement and tensile stress in GaN films

The effects of Si-doped prelayers on the optical properties of InGaN/GaN single quantum well structures

The effects of varying threading dislocation density on the optical properties of InGaN/GaN quantum wells

The impact of gross well width fluctuations on the efficiency of GaN-based light emitting diodes

The impact of growth parameters on trench defects in InGaN/GaN quantum wells

The impact of trench defects in InGaN/GaN light emitting diodes and implications for the “green gap” problem

The negligible effects of miscut on indium aluminium nitride growth

Thermal stress modelling of diamond on GaN/III-Nitride membranes

Thick, Adherent Diamond Films on AlN with Low Thermal Barrier Resistance

Ti Alloyed <i>α</i>-Ga<sub>2</sub>O<sub>3</sub>: Route towards Wide Band Gap Engineering

Towards a better understanding of trench defects in InGaN/GaN quantum wells

X-ray reflectivity method for the characterization of InGaN/GaN quantum well interface