List of works - Erik Lind

$\hbox{In}_{0.53}\hbox{Ga}_{0.47}\hbox{As}$ RTD–MOSFET Millimeter-Wave Wavelet Generator

scientific article published in July 2012

${\rm In}_{0.53}{\rm Ga}_{0.47}{\rm As}$ Multiple-Gate Field-Effect Transistors With Selectively Regrown Channels

scientific article published in March 2014

(Invited) High-k Oxides on InAs 100 and 111B Surfaces

scientific article published on 27 April 2012

1/f-noise in vertical InAs nanowire transistors

scientific article published in May 2013

15 nm diameter InAs nanowire MOSFETs

scientific article published in June 2011

20 GHz Wavelet Generator Using a Gated Tunnel Diode

scientific article published in June 2009

20 GHz gated tunnel diode based UWB pulse generator

scientific article published in June 2009

60 GHz impulse radio measurements

scientific article published in September 2011

60 GHz ultra-wideband impulse radio transmitter

scientific article published in September 2009

A 60 GHz super-regenerative oscillator for implementation in an impulse radio receiver

scientific article published in September 2010

A Combined Chemical Vapor Deposition and Rapid Thermal Diffusion Process for SiGe Esaki Diodes by Ultra-Shallow Junction Formation

A transmission line method for evaluation of vertical InAs nanowire contacts

scientific article published on 7 December 2015

Accumulation capacitance of narrow band gap metal-oxide-semiconductor capacitors

scientific article published on 7 June 2010

Admittance matching of 60 GHz rectangular dielectric resonator antennas for integrated impulse radio

scientific article published in November 2010

Al2O3/InAs metal-oxide-semiconductor capacitors on (100) and (111)B substrates

scientific article published on 26 March 2012

Amplifier Design Using Vertical InAs Nanowire MOSFETs

scientific article published in June 2016

Asymmetric InGaAs MOSFETs with InGaAs source and InP drain

scientific article published in May 2014

Asymmetric InGaAs/InP MOSFETs With Source/Drain Engineering

scientific article published in May 2014

Ballistic modeling of InAs nanowire transistors

scientific article published in January 2016

Band Structure Effects on the Scaling Properties of [111] InAs Nanowire MOSFETs

scientific article published in February 2009

Bias Stabilization of Negative Differential Conductance Oscillators Operated in Pulsed Mode

scientific article published in March 2011

Capacitance Measurements in Vertical III–V Nanowire TFETs

scientific article published in July 2018

Coherent V-Band Pulse Generator for Impulse Radio BPSK

scientific article published in July 2010

Combining axial and radial nanowire heterostructures: radial Esaki diodes and tunnel field-effect transistors

scientific article published on 18 November 2013

Comparing InSb, InAs, and InSb/InAs nanowire MOSFETs

Conductance quantization in quasi-ballistic InGaAs nanowire MOSFETs

scientific article published in June 2015

Defect evaluation in InGaAs field effect transistors with HfO2 or Al2O3 dielectric

scientific article published on 18 May 2015

Design of RF Properties for Vertical Nanowire MOSFETs

scientific article published in July 2011

Design of radial nanowire tunnel field-effect transistors

scientific article published in June 2014

Development of a Vertical Wrap-Gated InAs FET

article

Effect of Gate Oxide Defects on Tunnel Transistor RF Performance

scientific article published in June 2018

Effect of Gate Voltage Stress on InGaAs MOSFET With HfO2or Al2O3Dielectric

scientific article published in June 2016

Electrical Characterization and Modeling of Gate-Last Vertical InAs Nanowire MOSFETs on Si

scientific article published in August 2016

Extrinsic and Intrinsic Performance of Vertical InAs Nanowire MOSFETs on Si Substrates

scientific article published in September 2013

First InGaAs lateral nanowire MOSFET RF noise measurements and model

scientific article published in June 2017

Frequency modulation in mm-wave InGaAs MOSFET/RTD wavelet generators

scientific article published in May 2013

GaSb nanowire pFETs for III-V CMOS

scientific article published in June 2013

Gated tunnel diode in oscillator applications with high frequency tuning

scientific article published in March 2009

Gated tunnel diode with a reactive bias stabilizing network for 60 GHz impulse radio implementations

scientific article published in June 2010

Heterostructure Barriers in Wrap Gated Nanowire FETs

High current density InAsSb/GaSb tunnel field effect transistors

scientific article published in June 2012

High frequency performance of vertical InAs nanowire MOSFET

scientific article published in May 2010

High frequency vertical InAs nanowire MOSFETs integrated on Si substrates

scientific article published on 20 December 2011

High transconductance self-aligned gate-last surface channel In 0.53 Ga 0.47 As MOSFET

scientific article published in December 2011

High transconductance, f t and f max in In 0.63 Ga 0.37 As FinFETs using a novel fin formation technique

scientific article published in May 2014

High-Current GaSb/InAs(Sb) Nanowire Tunnel Field-Effect Transistors

article

High-Frequency Gate-All-Around Vertical InAs Nanowire MOSFETs on Si Substrates

scientific article published in May 2014

High-Frequency Performance of Self-Aligned Gate-Last Surface Channel $\hbox{In}_{0.53}\hbox{Ga}_{0.47}\hbox{As}$ MOSFET

scientific article published in March 2012

High-Performance InAs Nanowire MOSFETs

High-Performance Lateral Nanowire InGaAs MOSFETs With Improved On-Current

scientific article published in October 2016

High-frequency InGaAs tri-gate MOSFETs with f max of 400 GHz

scientific article published on 27 October 2016

High-k dielectrics on (100) and (110) n-InAs: Physical and electrical characterizations

scientific article published in April 2014

III-V Heterostructure Nanowire Tunnel FETs

scientific article published in May 2015

III-V Nanowires—Extending a Narrowing Road

Impact of Band-Tails on the Subthreshold Swing of III-V Tunnel Field-Effect Transistor

scientific article published in December 2017

Impact of doping and diameter on the electrical properties of GaSb nanowires

scientific article published on 30 January 2017

Impact of source doping on the performance of vertical InAs/InGaAsSb/GaSb nanowire tunneling field-effect transistors

article

Impact of source doping on the performance of vertical InAs/InGaAsSb/GaSb nanowire tunneling field-effect transistors

scientific article published on 23 August 2018

Improved subthreshold slope in an InAs nanowire heterostructure field-effect transistor

scientific article published in September 2006

Impulse-based 4 Gbit/s radio link at 60 GHz

scientific article published in 2011

In 0.63 Ga 0.37 As FinFETs using selectively regrown nanowires with peak transconductance of 2.85 mS/μm at V ds = 0.5 V

scientific article published in June 2014

InAs N-MOSFETs with record performance of I on = 600 μA/μm at I off = 100 nA/μm (V d = 0.5 V)

scientific article published in December 2013

InAs hole inversion and bandgap interface state density of 2 × 1011 cm−2 eV−1 at HfO2/InAs interfaces

scientific article published on 30 September 2013

InAs nanowire MOSFET differential active mixer on Si-substrate

scientific article published on 24 April 2014

InAs nanowire MOSFETs in three-transistor configurations: single balanced RF down-conversion mixers

scientific article published on 10 November 2014

InAs/GaSb vertical nanowire TFETs on Si for digital and analogue applications

scientific article published in June 2016

InAs/InGaAsSb/GaSb Nanowire Tunnel Field-Effect Transistors

scientific article published in November 2017

InGaAs MOSFETs with InP drain

scientific article published in June 2014

InGaAs nanowire MOSFETs with I ON = 555 µA/µm at I OFF = 100 nA/µm and V DD = 0.5 V

scientific article published in June 2016

InGaAs tri-gate MOSFETs with record on-current

scientific article published in December 2016

InP Drain Engineering in Asymmetric InGaAs/InP MOSFETs

scientific article published in February 2015

Individual Defects in InAs/InGaAsSb/GaSb Nanowire Tunnel Field-Effect Transistors Operating below 60 mV/decade

scientific article published on 14 June 2017

Interface characterization of metal-HfO2-InAs gate stacks using hard x-ray photoemission spectroscopy

scientific article published in July 2013

Interface composition of atomic layer deposited HfO2 and Al2O3 thin films on InAs studied by X-ray photoemission spectroscopy

scientific article published in July 2011

Intrinsic Performance of InAs Nanowire Capacitors

scientific article published in February 2014

Junctionless tri-gate InGaAs MOSFETs

scientific article published on 9 November 2017

Low Trap Density in InAs/High-k Nanowire Gate Stacks with Optimized Growth and Doping Conditions.

scientific article

Low-Frequency Noise in Vertical InAs Nanowire FETs

scientific article published in May 2010

Memristive and Memcapacitive Characteristics of a Au/Ti– $\hbox{HfO}_{2}$-InP/InGaAs Diode

Modeling of n-InAs metal oxide semiconductor capacitors with high-κ gate dielectric

scientific article published on 7 December 2014

Modelling and optimization of III/V transistors with matrices of nanowires

scientific article published in December 2010

Performance Evaluation of III–V Nanowire Transistors

scientific article published in September 2012

Quantized Conduction and High Mobility in Selectively Grown In(x)Ga(1-x)As Nanowires

article

RF Characterization of Vertical InAs Nanowire Wrap-Gate Transistors Integrated on Si Substrates

scientific article published in October 2011

RF Characterization of Vertical Wrap-Gated InAs/High-$\kappa $ Nanowire Capacitors

scientific article published in February 2016

RF and DC Analysis of Stressed InGaAs MOSFETs

scientific article published in February 2014

RF characterization of vertical InAs nanowire MOSFETs with f t and f max above 140 GHz

scientific article published in May 2014

RF reliability of gate last InGaAs nMOSFETs with high-k dielectric

scientific article published in October 2013

Radio-Frequency Characterization of Selectively Regrown InGaAs Lateral Nanowire MOSFETs

scientific article published in December 2014

Random telegraph signal noise in tunneling field-effect transistors with S below 60 mV/decade

scientific article published in September 2017

Record performance for junctionless transistors in InGaAs MOSFETs

scientific article published in June 2017

Reduction of native oxides on InAs by atomic layer deposited Al2O3 and HfO2

scientific article published on 27 September 2010

Reduction of off-state drain leakage in InGaAs-based metal-oxide-semiconductor field-effect transistors

scientific article published on 21 July 2014

Scaling of Vertical InAs–GaSb Nanowire Tunneling Field-Effect Transistors on Si

scientific article published in May 2016

Scaling properties of (111) InAs Nanowire MOSFETs

scientific article published in June 2008

Self-aligned gate-last surface channel In 0.53 Ga 0.47 As MOSFET with selectively regrown source and drain contact layers

scientific article published in June 2011

Self-aligned, gate-last process for vertical InAs nanowire MOSFETs on Si

scientific article published in December 2015

SiGe Esaki tunnel diodes fabricated by UHV-CVD growth and proximity rapid thermal diffusion

Single balanced down-conversion mixer utilizing indium arsenide nanowire MOSFETs

scientific article published in May 2014

Single suspended InGaAs nanowire MOSFETs

scientific article published in December 2015

Temperature and annealing effects on InAs nanowire MOSFETs

scientific article published in July 2011

Temperature and frequency characterization of InAs nanowire and HfO2 interface using capacitance–voltage method

Temperature dependent properties of InSb and InAs nanowire field-effect transistors

article

Thin electron beam defined hydrogen silsesquioxane spacers for vertical nanowire transistors

scientific article published in September 2014

Tunneling-based devices and circuits

scientific article published in June 2010

Uniform and position-controlled InAs nanowires on 2′′Si substrates for transistor applications

article

Unipolar and bipolar operation of InAs/InSb nanowire heterostructure field-effect transistors

article

Vertical InAs Nanowire Wrap Gate Transistors withft> 7 GHz andfmax> 20 GHz

scientific article published on 10 March 2010

Vertical InAs nanowire MOSFETs with ID S = 1.34 mA/µm and g m = 1.19 mS/µm at VD S = 0.5 V

scientific article published in June 2012

Vertical InAs/GaAsSb/GaSb tunneling field-effect transistor on Si with S = 48 mV/decade and I on = 10 μA/μm for I off = 1 nA/μm at V ds = 0.3 V

scientific article published in December 2016

Vertical InAs/InGaAs Heterostructure Metal-Oxide-Semiconductor Field-Effect Transistors on Si.

scientific article

Vertical Nanowire TFETs With Channel Diameter Down to 10 nm and Point SMIN of 35 mV/Decade

scientific article published in July 2018

Vertical heterojunction InAs/InGaAs nanowire MOSFETs on Si with I on = 330 μA/μm at I off = 100 nA/μm and V D = 0.5 V

scientific article published in June 2017

ZrO2 and HfO2 dielectrics on (001) n-InAs with atomic-layer-deposited in situ surface treatment

scientific article published on 28 March 2016

List of works by Erik Lind

$\hbox{In}_{0.53}\hbox{Ga}_{0.47}\hbox{As}$ RTD–MOSFET Millimeter-Wave Wavelet Generator

${\rm In}_{0.53}{\rm Ga}_{0.47}{\rm As}$ Multiple-Gate Field-Effect Transistors With Selectively Regrown Channels

(Invited) High-k Oxides on InAs 100 and 111B Surfaces

1/f-noise in vertical InAs nanowire transistors

15 nm diameter InAs nanowire MOSFETs

20 GHz Wavelet Generator Using a Gated Tunnel Diode

20 GHz gated tunnel diode based UWB pulse generator

60 GHz impulse radio measurements

60 GHz ultra-wideband impulse radio transmitter

A 60 GHz super-regenerative oscillator for implementation in an impulse radio receiver

A Combined Chemical Vapor Deposition and Rapid Thermal Diffusion Process for SiGe Esaki Diodes by Ultra-Shallow Junction Formation

A transmission line method for evaluation of vertical InAs nanowire contacts

Accumulation capacitance of narrow band gap metal-oxide-semiconductor capacitors

Admittance matching of 60 GHz rectangular dielectric resonator antennas for integrated impulse radio

Al2O3/InAs metal-oxide-semiconductor capacitors on (100) and (111)B substrates

Amplifier Design Using Vertical InAs Nanowire MOSFETs

Asymmetric InGaAs MOSFETs with InGaAs source and InP drain

Asymmetric InGaAs/InP MOSFETs With Source/Drain Engineering

Ballistic modeling of InAs nanowire transistors

Band Structure Effects on the Scaling Properties of [111] InAs Nanowire MOSFETs

Bias Stabilization of Negative Differential Conductance Oscillators Operated in Pulsed Mode

Capacitance Measurements in Vertical III–V Nanowire TFETs

Coherent V-Band Pulse Generator for Impulse Radio BPSK

Combining axial and radial nanowire heterostructures: radial Esaki diodes and tunnel field-effect transistors

Comparing InSb, InAs, and InSb/InAs nanowire MOSFETs

Conductance quantization in quasi-ballistic InGaAs nanowire MOSFETs

Defect evaluation in InGaAs field effect transistors with HfO2 or Al2O3 dielectric

Design of RF Properties for Vertical Nanowire MOSFETs

Design of radial nanowire tunnel field-effect transistors

Development of a Vertical Wrap-Gated InAs FET

Effect of Gate Oxide Defects on Tunnel Transistor RF Performance

Effect of Gate Voltage Stress on InGaAs MOSFET With HfO2or Al2O3Dielectric

Electrical Characterization and Modeling of Gate-Last Vertical InAs Nanowire MOSFETs on Si

Extrinsic and Intrinsic Performance of Vertical InAs Nanowire MOSFETs on Si Substrates

First InGaAs lateral nanowire MOSFET RF noise measurements and model

Frequency modulation in mm-wave InGaAs MOSFET/RTD wavelet generators

GaSb nanowire pFETs for III-V CMOS

Gated tunnel diode in oscillator applications with high frequency tuning

Gated tunnel diode with a reactive bias stabilizing network for 60 GHz impulse radio implementations

Heterostructure Barriers in Wrap Gated Nanowire FETs

High current density InAsSb/GaSb tunnel field effect transistors

High frequency performance of vertical InAs nanowire MOSFET

High frequency vertical InAs nanowire MOSFETs integrated on Si substrates

High transconductance self-aligned gate-last surface channel In 0.53 Ga 0.47 As MOSFET

High transconductance, f t and f max in In 0.63 Ga 0.37 As FinFETs using a novel fin formation technique

High-Current GaSb/InAs(Sb) Nanowire Tunnel Field-Effect Transistors

High-Frequency Gate-All-Around Vertical InAs Nanowire MOSFETs on Si Substrates

High-Frequency Performance of Self-Aligned Gate-Last Surface Channel $\hbox{In}_{0.53}\hbox{Ga}_{0.47}\hbox{As}$ MOSFET

High-Performance InAs Nanowire MOSFETs

High-Performance Lateral Nanowire InGaAs MOSFETs With Improved On-Current

High-frequency InGaAs tri-gate MOSFETs with f max of 400 GHz

High-k dielectrics on (100) and (110) n-InAs: Physical and electrical characterizations

III-V Heterostructure Nanowire Tunnel FETs

III-V Nanowires—Extending a Narrowing Road

Impact of Band-Tails on the Subthreshold Swing of III-V Tunnel Field-Effect Transistor

Impact of doping and diameter on the electrical properties of GaSb nanowires

Impact of source doping on the performance of vertical InAs/InGaAsSb/GaSb nanowire tunneling field-effect transistors

Impact of source doping on the performance of vertical InAs/InGaAsSb/GaSb nanowire tunneling field-effect transistors

Improved subthreshold slope in an InAs nanowire heterostructure field-effect transistor

Impulse-based 4 Gbit/s radio link at 60 GHz

In 0.63 Ga 0.37 As FinFETs using selectively regrown nanowires with peak transconductance of 2.85 mS/μm at V ds = 0.5 V

InAs N-MOSFETs with record performance of I on = 600 μA/μm at I off = 100 nA/μm (V d = 0.5 V)

InAs hole inversion and bandgap interface state density of 2 × 1011 cm−2 eV−1 at HfO2/InAs interfaces

InAs nanowire MOSFET differential active mixer on Si-substrate

InAs nanowire MOSFETs in three-transistor configurations: single balanced RF down-conversion mixers

InAs/GaSb vertical nanowire TFETs on Si for digital and analogue applications

InAs/InGaAsSb/GaSb Nanowire Tunnel Field-Effect Transistors

InGaAs MOSFETs with InP drain

InGaAs nanowire MOSFETs with I ON = 555 µA/µm at I OFF = 100 nA/µm and V DD = 0.5 V

InGaAs tri-gate MOSFETs with record on-current

InP Drain Engineering in Asymmetric InGaAs/InP MOSFETs

Individual Defects in InAs/InGaAsSb/GaSb Nanowire Tunnel Field-Effect Transistors Operating below 60 mV/decade

Interface characterization of metal-HfO2-InAs gate stacks using hard x-ray photoemission spectroscopy

Interface composition of atomic layer deposited HfO2 and Al2O3 thin films on InAs studied by X-ray photoemission spectroscopy

Intrinsic Performance of InAs Nanowire Capacitors

Junctionless tri-gate InGaAs MOSFETs

Low Trap Density in InAs/High-k Nanowire Gate Stacks with Optimized Growth and Doping Conditions.

Low-Frequency Noise in Vertical InAs Nanowire FETs

Memristive and Memcapacitive Characteristics of a Au/Ti– $\hbox{HfO}_{2}$-InP/InGaAs Diode