List of works - Hilde Hardtdegen

(Invited) Ternary Rare Earth Based Oxides for Nitride Based Devices

Aharonov-Bohm effect in quasi-one-dimensionalIn0.77Ga0.23As/InP rings

scientific article published on 01 February 1995

Confinement and inhomogeneous broadening effects in the quantum oscillatory magnetization of quantum dot ensembles.

scientific article published on 7 January 2016

Crossover from Josephson effect to single interface Andreev reflection in asymmetric superconductor/nanowire junctions.

scientific article published on 20 August 2014

Dense, Regular GaAs Nanowire Arrays by Catalyst-Free Vapor Phase Epitaxy for Light Harvesting.

scientific article published on 9 August 2016

Effect of Si-doping on InAs nanowire transport and morphology

Electric Current and Noise in Long GaN Nanowires in the Space-Charge Limited Transport Regime

Electrical spin injection into InN semiconductor nanowires.

scientific article published on 21 August 2012

Electronic edge-state and space-charge phenomena in long GaN nanowires and nanoribbons

scientific article published on 02 February 2017

Erratum: Aharonov-Bohm effect in quasi-one-dimensionalIn0.77Ga0.23As/InP rings

scientific article published on 01 October 1995

Evolution and characteristics of GaN nanowires produced via maskless reactive ion etching

scientific article published on 4 June 2014

From conformal overgrowth to lateral growth of indium arsenide nano structures on silicon substrates by MOVPE

Gate-defined quantum-dot devices realized in InGaAs/InP by incorporating a HfO2 layer as gate dielectric

Hexagonal GdScO3: an epitaxial high-κ dielectric for GaN

Hexagonal LaLuO3as high-κdielectric

High-field quasi-ballistic transport in AlGaN/GaN heterostructures

Improved gate-control in InAs nanowire structures by the use of GdScO3 as a gate dielectric

In situ characterization of GaAs growth in nitrogen atmosphere during MOVPE: a comparison to hydrogen atmosphere

Influence of the reactor inlet configuration on the AlGaN growth efficiency

Internal strains and crystal structure of the layers in AlGaN/GaN heterostructures grown on a sapphire substrate

Long electron spin coherence in ion‐implanted GaN: The role of localization

Low Frequency Noise in 2 DEG Channel of AlGaN∕GaN Heterostructures Scaled to Nanosize Width

Magnetic properties of Gd-doped GaN

Manipulating InAs nanowires with submicrometer precision.

scientific article

Mechanism of mobility increase of the two-dimensional electron gas in AlGaN∕GaN heterostructures under small dose gamma irradiation

article

Mechanism of strain relaxation by twisted nanocolumns revealed in AlGaN/GaN heterostructures

Monitoring structural influences on quantum transport in InAs nanowires

Nano-LED array fabrication suitable for future single photon lithography

scientific article published on 15 April 2015

Nanoimprint and selective-area MOVPE for growth of GaAs/InAs core/shell nanowires

scientific article published on 5 February 2013

Polymorphous GdScO 3 as high permittivity dielectric

Quantum confinement effect on the effective mass in two-dimensional electron gas of AlGaN/GaN heterostructures

Quantum dots in InAs nanowires induced by surface potential fluctuations

scientific article published on 4 March 2014

Real-time calibration of wafer temperature, growth rate and composition by optical in-situ techniques during AlxGa1−xAs growth in MOVPE

article

Realization of nanoscaled tubular conductors by means of GaAs/InAs core/shell nanowires

scientific article published on 21 December 2012

Resolving ambiguities in nanowire field-effect transistor characterization

scientific article published on 20 October 2015

Shallow strainedInxGa1−xAs/InyGa1−yAs superlattices embedded inp-i-ndiodes: Structural properties and optical response

scientific article published on 01 June 1996

Stability of charged density waves in InAs nanowires in an external magnetic field.

scientific article

The State of Strain in Single GaN Nanocolumns As Derived from Micro-Photoluminescence Measurements

scientific article published on 01 April 2006

The electronic transport of top subband and disordered sea in an InAs nanowire in the presence of a mobile gate.

scientific article

Vertically integrated (Ga, In)N nanostructures for future single photon emitters operating in the telecommunication wavelength range

scientific article published on 12 September 2013

Visualization and investigation of the non-thermalized electrons in an InAs nanowire by scanning gate microscopy

scientific article published on 20 June 2019

List of works by Hilde Hardtdegen

(Invited) Ternary Rare Earth Based Oxides for Nitride Based Devices

Aharonov-Bohm effect in quasi-one-dimensionalIn0.77Ga0.23As/InP rings

Confinement and inhomogeneous broadening effects in the quantum oscillatory magnetization of quantum dot ensembles.

Crossover from Josephson effect to single interface Andreev reflection in asymmetric superconductor/nanowire junctions.

Dense, Regular GaAs Nanowire Arrays by Catalyst-Free Vapor Phase Epitaxy for Light Harvesting.

Effect of Si-doping on InAs nanowire transport and morphology

Electric Current and Noise in Long GaN Nanowires in the Space-Charge Limited Transport Regime

Electrical spin injection into InN semiconductor nanowires.

Electronic edge-state and space-charge phenomena in long GaN nanowires and nanoribbons

Erratum: Aharonov-Bohm effect in quasi-one-dimensionalIn0.77Ga0.23As/InP rings

Evolution and characteristics of GaN nanowires produced via maskless reactive ion etching

From conformal overgrowth to lateral growth of indium arsenide nano structures on silicon substrates by MOVPE

Gate-defined quantum-dot devices realized in InGaAs/InP by incorporating a HfO2 layer as gate dielectric

Hexagonal GdScO3: an epitaxial high-κ dielectric for GaN

Hexagonal LaLuO3as high-κdielectric

High-field quasi-ballistic transport in AlGaN/GaN heterostructures

Improved gate-control in InAs nanowire structures by the use of GdScO3 as a gate dielectric

In situ characterization of GaAs growth in nitrogen atmosphere during MOVPE: a comparison to hydrogen atmosphere

Influence of the reactor inlet configuration on the AlGaN growth efficiency

Internal strains and crystal structure of the layers in AlGaN/GaN heterostructures grown on a sapphire substrate

Long electron spin coherence in ion‐implanted GaN: The role of localization

Low Frequency Noise in 2 DEG Channel of AlGaN∕GaN Heterostructures Scaled to Nanosize Width

Magnetic properties of Gd-doped GaN

Manipulating InAs nanowires with submicrometer precision.

Mechanism of mobility increase of the two-dimensional electron gas in AlGaN∕GaN heterostructures under small dose gamma irradiation

Mechanism of strain relaxation by twisted nanocolumns revealed in AlGaN/GaN heterostructures

Monitoring structural influences on quantum transport in InAs nanowires

Nano-LED array fabrication suitable for future single photon lithography

Nanoimprint and selective-area MOVPE for growth of GaAs/InAs core/shell nanowires

Polymorphous GdScO 3 as high permittivity dielectric

Quantum confinement effect on the effective mass in two-dimensional electron gas of AlGaN/GaN heterostructures

Quantum dots in InAs nanowires induced by surface potential fluctuations

Real-time calibration of wafer temperature, growth rate and composition by optical in-situ techniques during AlxGa1−xAs growth in MOVPE

Realization of nanoscaled tubular conductors by means of GaAs/InAs core/shell nanowires

Resolving ambiguities in nanowire field-effect transistor characterization

Shallow strainedInxGa1−xAs/InyGa1−yAs superlattices embedded inp-i-ndiodes: Structural properties and optical response

Stability of charged density waves in InAs nanowires in an external magnetic field.

The State of Strain in Single GaN Nanocolumns As Derived from Micro-Photoluminescence Measurements

The electronic transport of top subband and disordered sea in an InAs nanowire in the presence of a mobile gate.

Vertically integrated (Ga, In)N nanostructures for future single photon emitters operating in the telecommunication wavelength range

Visualization and investigation of the non-thermalized electrons in an InAs nanowire by scanning gate microscopy

g-factor and exchange energy in a few-electron lateral InGaAs quantum dot