(Invited) Low-Temperature Growth of Ge Nanowires by Vapor-Liquid-Solid Chemical Vapor Deposition

(Keynote) Devices Architectures and Technology for Quantum Computing

A fault-tolerant addressable spin qubit in a natural silicon quantum dot. ⬇️

scientific article published on 12 August 2016

A flexible and wearable terahertz scanner

A new design of nanocrystalline silicon optical devices based on 3-dimensional photonic crystal structures

A quantum-dot spin qubit with coherence limited by charge noise and fidelity higher than 99.9.

scientific article published on 18 December 2017

Anomalous suppression of single-electron tunnelling observed for Si nanobridge transistors with a suspended quantum dot cavity

article

Assembly of nanocrystalline silicon quantum dots based on a colloidal solution method

Atomistic study of phonon states in hydrogen-terminated Si ultra-thin films

Ballistic transport in silicon vertical transistors

article

Carrier conduction in a Si-nanocrystal-based single-electron transistor-I. Effect of gate bias

article

Carrier conduction in a Si-nanocrystal-based single-electron transistor-II. Effect of drain bias

article

Characterization and suppression of low-frequency noise in Si/SiGe quantum point contacts and quantum dots

Charge injection and trapping in silicon nanocrystals

Charge noise analysis of metal oxide semiconductor dual-gate Si/SiGe quantum point contacts

Charge sensing of a Si triple quantum dot system using single electron transistors

article

Charge storage and electron/light emission properties of silicon nanocrystals

Computer simulation of amorphous-silicon charge-coupled devices

Conductance quantization in nanoscale vertical structure silicon field-effect transistors with a wrap gate

article

Controlled Ge nanowires growth on patterned Au catalyst substrate

Corrigendum: Observation and coherent control of interface-induced electronic resonances in a field-effect transistor

scientific article published on 01 July 2017

Coupled quantum dots on SOI as highly integrated Si qubits

Deionization of Dopants in Silicon Nanofilms Even with Donor Concentration of Greater than 10(19) cm(-3).

scientific article published on 7 January 2016

Design Optimization of NEMS Switches for Suspended-Gate Single-Electron Transistor Applications

article

Design of multiple layered a-Si:H(F)/a-SiGex:H(F) films for enhancement in photoresponse in the near-infrared spectrum

Detection of variable tunneling rates in silicon quantum dots

Electrical properties of a CdTe/InSb hetero metal‐insulator‐semiconductor structure

Electron transport in physically-defined double quantum dots on a highly doped silicon-on-insulator substrate

Electron transport through a single nanocrystalline silicon quantum dot between nanogap electrodes

Electron-beam direct writing using RD2000N for fabrication of nanodevices

Fabrication and evaluation of heavily P-doped Si quantum dot and back-gate induced Si quantum dot

Field-dependant hopping conduction in silicon nanocrystal films

GHz photon-activated hopping between localized states in a silicon quantum dot

Germanium Nanowires with 3-nm-Diameter Prepared by Low Temperature Vapour–Liquid–Solid Chemical Vapour Deposition

scientific article published on 01 September 2011

Growth of Ge–Si nanowire heterostructures via chemical vapor deposition

High ON/OFF ratio and multimode transport in silicon nanochains field effect transistors

article

High-density assembly of nanocrystalline silicon quantum dots

Hopping conduction in size-controlled Si nanocrystals

Hydrogen radical assisted chemical vapor deposition of ZnSe

Impact of Key Circuit Parameters on Signal-to-Noise Ratio Characteristics for the Radio Frequency Single-Electron Transistors

article

Influence of the crystal orientation of substrate on low temperature synthesis of silicon nanowires from Si2H6

Inter-grain coupling effects on Coulomb oscillations in dual-gated nanocrystalline silicon point-contact transistors

article

Localization effects in the tunnel barriers of phosphorus-doped silicon quantum dots

Magnetic field dependence of Pauli spin blockade: A window into the sources of spin relaxation in silicon quantum dots

scholarly article in Physical Review B, vol. 86 no. 11, September 2012

Manipulation of silicon quantum dots and isolated structures using GHz photons

Microwave manipulation of electrons in silicon quantum dots

Nanocrystalline Silicon Quantum Dot Devices

Nanocrystalline silicon electron emitter with a high efficiency enhanced by a planarization technique

Nanostructured materials and devices for sensor and electronic applications

Observation and coherent control of interface-induced electronic resonances in a field-effect transistor.

scientific article published on 19 September 2016

Observation of Size Dependent Structural Defects in Silicon Nanowires

Observation of interdot coupling phenomena in nanocrystalline silicon point-contact structures

Observation of quantum level spectrum for silicon double single-electron transistors

article

Operation of nanocrystalline-silicon-based few-electron memory devices in the light of electron storage, ejection, and lifetime characteristics

Optimized electrical control of a Si/SiGe spin qubit in the presence of an induced frequency shift

Perpendicular magnetic field dependence of triangular triple silicon quantum dot system

Physical Mechanism of Enhanced Uniaxial Stress Effect on Carrier Mobility in ETSOI MOSFETs

article

Physically defined triple quantum dot systems in silicon on insulator

Preparation and characterization of low-resistivity ZnS for blue LED's

Preparation of Y-doped SrCuO2 infinite layer films by MOCVD

Probing electron charging in nanocrystalline Si dots using Kelvin probe force microscopy

Properties of a-Si based alloys prepared from fluorides and hydrogen

Proposal of coplanar-type high-Tc superconducting field-effect devices

Quantum dots in single electron transistors with ultrathin silicon-on-insulator structures

article

Room temperature single electron charging in single silicon nanochains

Self-aligned double-gate single-electron transistor derived from 0.12-μm-scale electron-beam lithography

article

Self-limiting adsorption and in situ optical monitoring for atomic layer epitaxy of oxide superconductors layer epitaxy of oxide superconductors

article by S. Oda et al published March 1993 in Thin Solid Films

Selflimiting adsorption of precursors for chemical vapor deposition of oxide superconductors

Silicon-based single-electron memory using a multiple-tunnel junction fabricated by electron-beam direct writing

Silicon-on-Insulator-Based Radio Frequency Single-Electron Transistors Operating at Temperatures above 4.2 K

article

Spin-related tunneling in lithographically-defined silicon quantum dots

Study of Single-Charge Polarization on a Pair of Charge Qubits Integrated Onto a Silicon Double Single-Electron Transistor Readout

article

Superconductivity and surface morphology of YBCO thin films prepared by metalorganic chemical vapor deposition

Switching properties of electromechanically bistable and multistable bridges for nonvolatile memory applications

The nanostructuring of materials for device and sensor applications

Tip-enhanced Raman mapping of a single Ge nanowire

Toward Long-Term Retention-Time Single-Electron-Memory Devices Based on Nitrided Nanocrystalline Silicon Dots

Transient response analysis of programming/readout characteristics for NEMS memory

Vapor-Liquid-Solid Synthesis of Ge Nanowire on H-terminated Si Substrate

Vapor-solid-solid radial growth of Ge nanowires

Vertical-coupled SiGe double quantum dots

Vertical-type amorphous-silicon MOSFET ICs

Visualization of Ultrafast Electron Dynamics Using Time-Resolved Photoemission Electron Microscopy

scholarly article published 2015

p-channel amorphous silicon TFTs with high hole mobility

article