Band gap changes of GaN shocked to 13 GPa

Characteristics of InGaN-AlGaN multiple-quantum-well laser diodes

Comparison study of N- and In-polar {0001} InN layers grown by MOVPE

Continuous-wave operation of DFB laser diodes based on GaN using 10$^{\rm th}$th-order laterally coupled surface gratings

scientific article published on 01 February 2020

Crystal orientation of GaN layers on (1010) m-plane sapphire

Design and performance of asymmetric waveguide nitride laser diodes

Disorder effects on luminescence in δ-dopedn-i-p-isuperlattices

scientific article published on 01 February 1995

Effect of heterostructure design on carrier injection and emission characteristics of 295 nm light emitting diodes

Effect of strain and barrier composition on the polarization of light emission from AlGaN/AlN quantum wells

Energetics of Quantum Dot Formation and Relaxation of InGaAs on GaAs(001)

Growth and characterization of manganese-doped InAsP

Growth mechanism of InGaN quantum dots during metalorganic vapor phase epitaxy

Growth mode of InGaN on GaN (0001) in MOVPE

Growth mode transition and relaxation of thin InGaN layers on GaN (0001)

Growth of semipolar (10$ \bar 1\bar 3 $) InN on m -plane sapphire using MOVPE

High aluminium content and high growth rates of AlGaN in a close-coupled showerhead MOVPE reactor

High-Q-preserving coupling between a spiral and a semicircle μ-cavity

scientific article published on 01 May 2007

Indium incorporation efficiency and critical layer thickness of (202¯1) InGaN layers on GaN

Indium nitride quantum dot growth modes in metalorganic vapour phase epitaxy

Influence of a GaN Cap Layer on the Morphology and the Physical Properties of Embedded Self-Organized InN Quantum Dots on GaN(0001) Grown by Metal–Organic Vapour Phase Epitaxy

Influence of group III and group V partial pressures on the size and density of InGaN quantum dots in MOVPE

Influence of microstructure on the carrier concentration of Mg-doped GaN films

Low-threshold AlGaN-based UVB VCSELs enabled by post-growth cavity detuning

scientific article published in 2022

MOCVD growth and characterization of AlGaInN multiple quantum well heterostructures and laser diodes

MOVPE growth and indium incorporation of polar, semipolar (112‾2) and (202‾1) InGaN

scholarly article by Duc V. Dinh et al published 21 September 2015 in Physica Status Solidi B

MOVPE growth of semipolar AlN on m-plane sapphire

Metalorganic vapor phase epitaxy of InN on GaN using tertiary-butylhydrazine as nitrogen source

Metastability of Oxygen Donors in AlGaN

scientific article published in Physical Review Letters

Multicharacterization approach for studying InAl(Ga)N/Al(Ga)N/GaN heterostructures for high electron mobility transistors

article

Nucleation and Coalescence of Indium Rich InGaN Layers on Nitridated Sapphire in Metal–Organic Vapor Phase Epitaxy

Orientation control of GaN and grown on sapphire by metal-organic vapor phase epitaxy

Performance and degradation of continuous-wave InGaN multiple-quantum-well laser diodes on epitaxially laterally overgrown GaN substrates

Performance and optical gain characteristic of InGaN MQW laser diodes

Phase separation in InGaN multiple quantum wells annealed at high nitrogen pressures

Quantitative analysis of the polarization fields and absorption changes in InGaN/GaN quantum wells with electroabsorption spectroscopy

article published in 2002

Ripening of InAs quantum dots on GaAs (001) investigated with in situ scanning tunneling microscopy in metal–organic vapor phase epitaxy

Role of nitridation on polarity and growth of InN by metal–organic vapor phase epitaxy

Room-temperature continuous-wave operation of InGaN multiple-quantum-well laser diodes with an asymmetric waveguide structure

Shape of indium nitride quantum dots and nanostructures grown by metal organic vapour phase epitaxy

Single phase GaN on sapphire grown by metal-organic vapor phase epitaxy

Spatial clustering of defect luminescence centers in Si-doped low resistivity Al0.82Ga0.18N

Structural and optical properties of semipolar AlGaN grown on sapphire by metal–organic vapor phase epitaxy

Structure investigations of nonpolar GaN layers.

scientific article published in March 2010

Surface Transitions During InGaN Growth on GaN(0001) in Metal–Organic Vapor Phase Epitaxy

Surface and crystal structure of nitridated sapphire substrates and their effect on polar InN layers

article published in 2014

Surface diffusion and layer morphology of ((112¯2)) GaN grown by metal-organic vapor phase epitaxy

Surface transition induced island formation on thin strained InGaN layers on GaN (0001) in metal-organic vapour phase epitaxy

The critical thickness of InGaN on (0001)GaN

Topography of AlGaN, GaN and InGaN layers grown by metal-organic vapor phase epitaxy

Volmer-Weber growth mode of InN quantum dots on GaN by MOVPE

Wavelength and intensity switching in directly coupled semiconductor microdisk lasers

scientific article