A Review of Barriers Women Face in Research Funding Processes in the UK

A comparison of the optical properties of InGaN/GaN multiple quantum well structures grown with and without Si-doped InGaN prelayers

article published in 2016

A full free spectral range tuning of p-i-n doped gallium nitride microdisk cavity

A study of the inclusion of prelayers in InGaN/GaN single- and multiple-quantum-well structures

A study of the optical and polarisation properties of InGaN/GaN multiple quantum wells grown on a-plane and m-plane GaN substrates

scientific article

AFM observation of diamond indenters after oxidation at elevated temperatures

Advances in AFM for the electrical characterization of semiconductors

Alloy content determination of fully strained and partially relaxed semi-polar group III-nitrides by x-ray diffraction

Alloy fluctuations at dislocations in III-nitrides: identification and impact on optical properties

An investigation into defect reduction techniques for growth of non-polar GaN on sapphire

article

Analysis of defect-related inhomogeneous electroluminescence in InGaN/GaN QW LEDs

Anisotropic strain relaxation in a-plane GaN quantum dots

Application of highly silicon-doped marker layers in the investigation of unintentional doping in GaN on sapphire

article published in 2010

Assessment of scanning spreading resistance microscopy for application to n-type GaN

Assessment of the performance of scanning capacitance microscopy for n-type gallium nitride

scholarly article by Joy Sumner et al published 2008 in Journal of Vacuum Science & Technology B

Atom probe extended to AlGaN: three-dimensional imaging of a Mg-doped AlGaN/GaN superlattice

Atom probe reveals the structure of Inx Ga1–xN based quantum wells in three dimensions

Atom probe tomography and transmission electron microscopy of a Mg-doped AlGaN/GaN superlattice

article

Atom probe tomography assessment of the impact of electron beam exposure on InxGa1−xN/GaN quantum wells

Atom probe tomography characterisation of a laser diode structure grown by molecular beam epitaxy

Atom probe tomography of nitride semiconductors

Atom probe tomography today

Bias dependence and correlation of the cathodoluminescence and electron beam induced current from an InGaN/GaN light emitting diode

article

Calibration and Applications of Scanning Capacitance Microscopy: n-Type GaN

Carrier Density Dependent Localization and Consequences for Efficiency Droop in InGaN/GaN Quantum Well Structures

Carrier distributions in InGaN/GaN light-emitting diodes

Carrier dynamics of InxGa1−xN quantum disks embedded in GaN nanocolumns

Carrier localization in the vicinity of dislocations in InGaN

Carrier localization mechanisms in InxGa1−xN/GaN quantum wells

article

Cathodoluminescence hyperspectral imaging of trench-like defects in InGaN/GaN quantum well structures

article published in 2014

Cavity Enhancement of Single Quantum Dot Emission in the Blue

scientific article published on 27 December 2009

Cavity-enhanced blue single-photon emission from a single InGaN∕GaN quantum dot

article

Characterisation of InGaN by Photoconductive Atomic Force Microscopy

Characterization of InGaN quantum wells with gross fluctuations in width

Characterization of unintentional doping in nonpolar GaN

Coincident Electron Channeling and Cathodoluminescence Studies of Threading Dislocations in GaN

article

Comparative studies of efficiency droop in polar and non-polar InGaN quantum wells

article published in 2016

Compositional contrast in AlxGa1−xN/GaN heterostructures using scanning spreading resistance microscopy

article

Compositional inhomogeneity of a high-efficiency InxGa1−xN based multiple quantum well ultraviolet emitter studied by three dimensional atom probe

article

Control of the Oscillator Strength of the Exciton in a Single InGaN-GaN Quantum Dot

scientific article published in Physical Review Letters

Controlled tuning of whispering gallery modes of GaN/InGaN microdisk cavities

Correlations between the morphology and emission properties of trench defects in InGaN/GaN quantum wells

article published in 2013

Critical Assessment 23: Gallium nitride-based visible light-emitting diodes

scholarly article by Rachel Angharad Oliver published 3 March 2016 in Materials Science and Technology

Crystalline Interlayers for Reducing the Effective Thermal Boundary Resistance in GaN-on-Diamond

scientific article published on 16 November 2020

Defect Reduction in Semi-Polar (112̄2) Gallium Nitride Grown Using Epitaxial Lateral Overgrowth

Defect structures in (001) zincblende GaN/3C-SiC nucleation layers

Defects in III-nitride microdisk cavities

Deterministic optical polarisation in nitride quantum dots at thermoelectrically cooled temperatures

scientific article published on 21 September 2017

Dielectric behaviour of montmorillonite/cyanoethylated cellulose nanocomposites

scientific article published on 23 May 2017

Dielectric response of wurtzite gallium nitride in the terahertz frequency range

Difference in linear polarization of biaxially strainedInxGa1−xNalloys on nonpolara-plane andm-plane GaN

scholarly article in Physical Review B, vol. 92 no. 24, December 2015

Direct generation of linearly polarized single photons with a deterministic axis in quantum dots

Dislocation density-dependent quality factors in InGaN quantum dot containing microdisks

Dislocations as channels for the fabrication of sub-surface porous GaN by electrochemical etching

Dislocations in AlGaN: Core Structure, Atom Segregation, and Optical Properties

scientific article published on 14 July 2017

Distinctive signature of indium gallium nitride quantum dot lasing in microdisk cavities

scientific article

Dynamics of carrier redistribution processes in InGaN/GaN quantum well structures

Effect of QW growth temperature on the optical properties of blue and green InGaN/GaN QW structures

Effect of QW growth temperature on the optical properties of blue and green InGaN/GaN QW structures

Effect of Threading Dislocations on the Quality Factor of InGaN/GaN Microdisk Cavities

scientific article

Effect of electron blocking layers on the conduction and valence band profiles of InGaN/GaN LEDs

Effect of growth temperature and V/III-ratio on the surface morphology of MOVPE-grown cubic zincblende GaN

Effect of overgrowth conditions on the optical properties of lateral epitaxially overgrown a -plane GaN

Effect of stacking faults on the photoluminescence spectrum of zincblende GaN

scientific article published on 14 May 2018

Effect of the barrier growth mode on the luminescence and conductivity micron scale uniformity of InGaN light emitting diodes

Effects of a Si-doped InGaN Underlayer on the Optical Properties of InGaN/GaN Quantum Well Structures with Different Numbers of Quantum Wells

scientific article published on 15 September 2018

Effects of an InGaN prelayer on the properties of InGaN/GaN quantum well structures

Effects of microstructure and growth conditions on quantum emitters in gallium nitride

Effects of quantum well growth temperature on the recombination efficiency of InGaN/GaN multiple quantum wells that emit in the green and blue spectral regions

Electrically driven single InGaN/GaN quantum dot emission

Electron Channeling Contrast Imaging of Defects in III-Nitride Semiconductors

Encapsulation of methylammonium lead bromide perovskite in nanoporous GaN

scientific article published in February 2019

Energy landscape and carrier wave-functions in InGaN/GaN quantum wells

Erratum: “Alloy content determination of fully strained and partially relaxed semi-polar group III-nitrides by x-ray diffraction” [J. Appl. Phys. 114, 053520 (2013)]

scholarly article published in Journal of Applied Physics

Evaluation of growth methods for the heteroepitaxy of non-polar ( 11 2 ¯ 0 ) GAN on sapphire by MOVPE

Evidence for Dark States in the Temperature Dependent Recombination Dynamics of InGaN/GaN Quantum Wells

Evolution of the m-Plane Quantum Well Morphology and Composition within a GaN/InGaN Core–Shell Structure

article

Experimental and theoretical study of the quantum-confined Stark effect in a single InGaN/GaN quantum dot under applied vertical electric field

Fundamentals of X-ray Diffraction Characterisation of Strain in GaN Based Compounds

GaN-on-diamond technology platform: Bonding-free membrane manufacturing process

Gallium nitride surface preparation optimised using in situ scanning tunnelling microscopy

scholarly article by Rachel Angharad Oliver et al published May 2003 in Applied Surface Science

Gender issues in fundamental physics: Strumia’s bibliometric analysis fails to account for key confounders and confuses correlation with causation

Gross well-width fluctuations in InGaN quantum wells

Growth and assessment of InGaN quantum dots in a microcavity: A blue single photon source

Growth and characterisation of nitride nanostructures

Growth and optical characterisation of multilayers of InGaN quantum dots

article

Growth modes in heteroepitaxy of InGaN on GaN

Growth of InGaN quantum dots on GaN by MOVPE, employing a growth temperature nitrogen anneal

Growth of InGaN quantum dots with AlGaN barrier layers via modified droplet epitaxy

Growth of free-standing bulk wurtzite Al x Ga 1−x N layers by molecular beam epitaxy using a highly efficient RF plasma source

Growth of non-polar (11-20) InGaN quantum dots by metal organic vapour phase epitaxy using a two temperature method

article published in 2014

Growth of non-polar InGaN quantum dots with an underlying AlN/GaN distributed Bragg reflector by metal-organic vapour phase epitaxy

Heteroepitaxial growth of InN islands studied by STM and AFM

article published in 2002

High excitation carrier density recombination dynamics of InGaN/GaN quantum well structures: Possible relevance to efficiency droop

article

High excitation density recombination dynamics in InGaN/GaN quantum well structures in the droop regime

High resolution transmission electron microscopy and three-dimensional atom probe microscopy as complementary techniques for the high spatial resolution analysis of GaN based quantum well systems

article

High temperature stability in non-polar (11$ \bar 2 $0) InGaN quantum dots: Exciton and biexciton dynamics

article

High-temperature performance of non-polar (11-20) InGaN quantum dots grown by a quasi-two-temperature method

article

Highlighting threading dislocations in MOVPE-grown GaN using an in situ treatment with SiH4 and NH3

article

Highly polarized electrically driven single-photon emission from a non-polar InGaN quantum dot

Imaging dislocations in gallium nitride across broad areas using atomic force microscopy

scientific article

Improvement of single photon emission from InGaN QDs embedded in porous micropillars

In-situ study of growth of carbon nanotube forests on conductive CoSi2 support

InGaN as a Substrate for AC Photoelectrochemical Imaging

scientific article published on 11 October 2019

InGaN quantum dots grown by metalorganic vapor phase epitaxy employing a post-growth nitrogen anneal

article

InGaN super-lattice growth for fabrication of quantum dot containing microdisks

Indium clustering in a-plane InGaN quantum wells as evidenced by atom probe tomography

scholarly article by Fengzai Tang et al published 16 February 2015 in Applied Physics Letters

Insights into the growth mechanism of InxGa1−xN epitaxial nanostructures formed using a silane predose

Insights into the origin of threading dislocations in GaN∕Al2O3 from atomic force microscopy

Intentional and unintentional localization in InGaN

article published in 2007

Investigating efficiency droop in InGaN/GaN quantum well structures using ultrafast time-resolved terahertz and photoluminescence spectroscopy

Investigation of optimum growth conditions of InAlN for application in distributed Bragg reflectors

article published in 2010

Investigation of stacking faults in MOVPE-grown zincblende GaN by XRD and TEM

Investigation of unintentional indium incorporation into GaN barriers of InGaN/GaN quantum well structures

scholarly article by Fabien C-P Massabuau et al published 19 December 2014 in Physica Status Solidi B

Let’s fix the system, not the scientists

Light-output enhancement of InGaN light emitting diodes regrown on nanoporous distributed Bragg reflector substrates

article by John C. Jarman et al published 14 May 2019 in Japanese Journal of Applied Physics

Local carrier recombination and associated dynamics in m-plane InGaN/GaN quantum wells probed by picosecond cathodoluminescence

Low temperature carrier redistribution dynamics in InGaN/GaN quantum wells

article

Low temperature growth of ultra-high mass density carbon nanotube forests on conductive supports

article

Low temperature photoluminescence and cathodoluminescence studies of nonpolar GaN grown using epitaxial lateral overgrowth

Low threshold, room-temperature microdisk lasers in the blue spectral range

article published in 2013

Low-Temperature Growth of Carbon Nanotube Forests Consisting of Tubes with Narrow Inner Spacing Using Co/Al/Mo Catalyst on Conductive Supports

scientific article published on 27 July 2015

Materials challenges for devices based on single, self-assembled InGaN quantum dots

article

Mechanisms preventing trench defect formation in InGaN/GaN quantum well structures using hydrogen during GaN barrier growth

Mg dopant distribution in an AlGaN/GaN p-type superlattice assessed using atom probe tomography, TEM and SIMS

Microstructural characterisation of a prototype layer structure for a GaN-based photonic crystal cavity

Microstructural dependency of optical properties of m-plane InGaN multiple quantum wells grown on 2° misoriented bulk GaN substrates

Microstructural origins of localization in InGaN quantum wells

Microstructural, optical, and electrical characterization of semipolar (112¯2) gallium nitride grown by epitaxial lateral overgrowth

scholarly article by Tongtong Zhu et al published 15 October 2010 in Journal of Applied Physics

Molecular beam epitaxy of free-standing bulk wurtzite AlxGa1-xN layers using a highly efficient RF plasma source

Morphological changes of InGaN epilayers during annealing assessed by spectral analysis of atomic force microscopy images

Morphological, structural, and emission characterization of trench defects in InGaN/GaN quantum well structures

Multimicroscopy of cross-section zincblende GaN LED heterostructure

scientific article

Nano-cathodoluminescence reveals the effect of electron damage on the optical properties of nitride optoelectronics and the damage threshold

Nanocathodoluminescence Reveals Mitigation of the Stark Shift in InGaN Quantum Wells by Si Doping

scientific article published on 21 October 2015

Nanocathodoluminescence reveals the mitigation of the Stark shift in InGaN quantum wells by silicon doping

Nanocomposites of TiO₂/cyanoethylated cellulose with ultra high dielectric constants

scientific article published on 4 April 2016

Nanoscale solid-state quantum computing.

scientific article published in July 2003

Nanoscale structural and chemical analysis of F-implanted enhancement-mode InAlN/GaN heterostructure field effect transistors

article

Nanoscopic insights into the effect of silicon on core-shell InGaN/GaN nanorods: Luminescence, composition, and structure

article

Nitride Single Photon Sources

Nitride quantum light sources

article by Tongtong Zhu & Rachel Angharad Oliver published 1 February 2016 in Europhysics Letters

Nitride-based quantum dots for single photon source applications

article

Non-linear excitation and correlation studies of single InGaN quantum dots

Non-polar (11$ \bar 2 $0) InGaN quantum dots with short exciton lifetimes grown by metal-organic vapour phase epitaxy

article

Non-polar (11-20) InGaN quantum dots with short exciton lifetimes grown by metal-organic vapor phase epitaxy

article

Non-polar InGaN quantum dot emission with crystal-axis oriented linear polarization

Non-polar nitride single-photon sources

Nucleation and growth ofGaN∕AlNquantum dots

scholarly article in Physical Review B, vol. 70 no. 12, September 2004

Observations of Rabi oscillations in a non-polar InGaN quantum dot

article

On-Chip Thermal Insulation Using Porous GaN

scientific article published on 10 December 2018

Optical Studies of Non-linear Absorption in Single InGaN/GaN Quantum Dots

Optical and structural properties of dislocations in InGaN

Optical cavity efficacy and lasing of focused ion beam milled GaN/InGaN micropillars

Optical properties of c-Plane InGaN/GaN single quantum wells as a function of total electric field strength

Optical studies of non-polar m-plane (11¯00) InGaN/GaN multi-quantum wells grown on freestanding bulk GaN

Optical studies on In x Ga 1-x N quantum disks

Optimisation of GaN overgrowth of InAlN for DBRs

Origin(s) of Anomalous Substrate Conduction in MOVPE-Grown GaN HEMTs on Highly Resistive Silicon

Origins of Spectral Diffusion in the Micro-Photoluminescence of Single InGaN Quantum Dots

article

Photoluminescence Studies of Exciton Recombination and Dephasing in Single InGaN Quantum Dots

Photoluminescence studies of cubic GaN epilayers

Polarisation-controlled single photon emission at high temperatures from InGaN quantum dots.

scientific article

Polarized photoluminescence excitation spectroscopy of a-plane InGaN/GaN multiple quantum wells grown on r-plane sapphire

Porous AlGaN-Based Ultraviolet Distributed Bragg Reflectors

Practical Issues for Atom Probe Tomography Analysis of III-Nitride Semiconductor Materials

scientific article published on 30 April 2015

Practical issues in carrier-contrast imaging of GaN structures

Preparation of InAs(0 0 1) surface for spin injection via a chemical route

Progress in the optical studies of single InGaN/GaN quantum dots

Properties of GaN nanowires with Sc x Ga1−x N insertion

scientific article published on 25 July 2017

Properties of trench defects in InGaN/GaN quantum well structures

Publisher's Note: “Low temperature growth of ultra-high mass density carbon nanotube forests on conductive supports” [Appl. Phys. Lett. 103, 073116 (2013)]

article published in 2013

Q-factor measurements on planar nitride cavities

Quantification of unintentional doping in non-polar GaN using scanning capacitance microscopy

Quantum-confined Stark effect in a single InGaN quantum dot under a lateral electric field

article

Racism, equity and inclusion in research funding

Radiative recombination mechanisms in polar and non-polar InGaN/GaN quantum well LED structures

Recombination mechanisms in heteroepitaxial non-polar InGaN/GaN quantum wells

Resonant photoluminescence studies of carrier localisation in c-plane InGaN/GaN quantum well structures

scientific article published on 20 March 2018

Response to “Comment on ‘The effects of Si doping on dislocation movement and tensile stress in GaN films’” [J. Appl. Phys. 109, 073509 (2011)]

Response to “Comment on ‘Three-dimensional atom probe studies of an InxGa1−xN∕GaN multiple quantum well structure: assessment of possible indium clustering’” [Appl. Phys. Lett. 91, 176101 (2007)]

article

Role of gross well-width fluctuations in bright, green-emitting single InGaN∕GaN quantum well structures

Room temperature PL efficiency of InGaN/GaN quantum well structures with prelayers as a function of number of quantum wells

SCM and SIMS investigations of unintentional doping in III-nitrides

article published in 2015

Scanning capacitance microscopy as a tool for the assessment of unintentional doping in GaN

Scanning capacitance microscopy studies of GaN grown by epitaxial layer overgrowth

Scanning capacitance microscopy studies of unintentional doping in epitaxial lateral overgrowth GaN

Self-assembled Multilayers of Silica Nanospheres for Defect Reduction in Non- and Semipolar Gallium Nitride Epitaxial Layers

scientific article

SiH4 exposure of GaN surfaces: A useful tool for highlighting dislocations

Simulation of the quantum-confined stark effect in a single InGaN quantum dot

Spectral diffusion time scales in InGaN/GaN quantum dots

Structural and optical properties of (112̅2) InGaN quantum wells compared to (0001) and (112̅0)

Structural impact on the nanoscale optical properties of InGaN core-shell nanorods

Structural, electronic, and optical properties ofm-plane InGaN/GaN quantum wells: Insights from experiment and atomistic theory ⬇️

scholarly article in Physical Review B, vol. 92 no. 23, December 2015

Structure and composition of non-polar (11-20) InGaN nanorings grown by modified droplet epitaxy

article

Structure and magnetic properties of an epitaxial Fe(110)/MgO(111)/GaN(0001) heterostructure

Support−Catalyst−Gas Interactions during Carbon Nanotube Growth on Metallic Ta Films

Surface Zeta Potential and Diamond Seeding on Gallium Nitride Films

scientific article published on 27 October 2017

Surface morphology of homoepitaxial c-plane GaN: Hillocks and ridges

Surface terracing on ferritic stainless-steel fibres and potential relevance toin vitrocell growth

Temperature-dependent fine structure splitting in InGaN quantum dots

Temporal variation in photoluminescence from single InGaN quantum dots

article

The ABC model of recombination reinterpreted: Impact on understanding carrier transport and efficiency droop in InGaN/GaN light emitting diodes

The Spatial Distribution of Threading Dislocations in Gallium Nitride Films

scholarly article by Michelle A. Moram et al published 19 October 2009 in Advanced Materials

The Use of Spatial Analysis Techniques in Defect and Nanostructure Studies

The atomic structure of polar and non-polar InGaN quantum wells and the green gap problem

scientific article published on 3 February 2017

The consequences of high injected carrier densities on carrier localization and efficiency droop in InGaN/GaN quantum well structures

The effect of Si on the growth mode of GaN

The effect of V:III ratio on the growth of InN nanostructures by molecular beam epitaxy

The effect of annealing on the surface morphology of strained and unstrained InxAl1−xN thin films

The effect of temperature and ammonia flux on the surface morphology and composition of InxAl1−xN epitaxial layers

article

The effects of Si doping on dislocation movement and tensile stress in GaN films

The effects of Si-doped prelayers on the optical properties of InGaN/GaN single quantum well structures

The effects of annealing on non-polar (112¯0) a-plane GaN films

The effects of varying metal precursor fluxes on the growth of InAlN by metal organic vapour phase epitaxy

article

The effects of varying threading dislocation density on the optical properties of InGaN/GaN quantum wells

The impact of ScOxNyinterlayers on unintentional doping and threading dislocations in GaN

The impact of gross well width fluctuations on the efficiency of GaN-based light emitting diodes

article by Rachel Angharad Oliver et al published 30 September 2013 in Applied Physics Letters

The impact of growth parameters on trench defects in InGaN/GaN quantum wells

article published in 2014

The impact of hydrogen on indium incorporation and surface accumulation in InAlN epitaxy

scholarly article by Thomas C. Sadler et al published September 2011 in Journal of Crystal Growth

The impact of substrate miscut on the microstructure and photoluminescence efficiency of (0001) InGaN quantum wells grown by a two-temperature method

The impact of substrate miscut on the morphology of InGaN epitaxial layers subjected to a growth interruption

The impact of trench defects in InGaN/GaN light emitting diodes and implications for the “green gap” problem

The influence of ammonia on the growth mode in InGaN/GaN heteroepitaxy

The influence of coalescence time on unintentional doping in GaN/sapphire

The microstructure of non-polar a-plane (11 2¯0) InGaN quantum wells

The nature of carrier localisation in polar and nonpolar InGaN/GaN quantum wells

article published in 2016

The negligible effects of miscut on indium aluminium nitride growth

The origin and reduction of dislocations in Gallium Nitride

scholarly article by Rachel Angharad Oliver et al published 5 March 2008 in Journal of Materials Science: Materials in Electronics

The role of rough surfaces in quantitative ADF imaging of gallium nitride-based materials

The role of strain in controlling the surface morphology of AlxGa1−xN following in situ treatment with SiH4 and NH3

Theoretical and experimental analysis of radiative recombination lifetimes in nonpolar InGaN/GaN quantum dots

Theoretical and experimental analysis of the photoluminescence and photoluminescence excitation spectroscopy spectra of m-plane InGaN/GaN quantum wells

Thermal stress modelling of diamond on GaN/III-Nitride membranes

scholarly article in Carbon, vol. 174, April 2021

Thick, Adherent Diamond Films on AlN with Low Thermal Barrier Resistance

scientific article published on 21 October 2019

Threading dislocation reduction in (0001) GaN thin films using SiNx interlayers

Three methods for the growth of InGaN nanostructures by MOVPE

Three-dimensional atom probe analysis of green- and blue-emitting InxGa1−xN∕GaN multiple quantum well structures

article

Three-dimensional atom probe studies of an InxGa1−xN∕GaN multiple quantum well structure: Assessment of possible indium clustering

scholarly article by Mark J. Galtrey et al published 5 February 2007 in Applied Physics Letters

Ti Alloyed <i>α</i>-Ga₂O₃: Route towards Wide Band Gap Engineering

scientific article published on 20 December 2020

Time-integrated and time-resolved photoluminescence studies of InGaN quantum dots

Time-resolved dynamics in single InGaN quantum dots

article

Time-resolved dynamics in single InGaN quantum dots (Invited Paper)

article

Towards a better understanding of nano-islands formed during atmospheric pressure MOVPE

Towards a better understanding of trench defects in InGaN/GaN quantum wells

Transfer Printed Multi-color Integrated Devices for Visible Light Communication Applications

scholarly article published 2016

Two-photon absorption from single InGaN/GaN quantum dots

article

Two-photon autocorrelation measurements on a single InGaN/GaN quantum dot.

scientific article published on 27 May 2009

Ultra-low threshold gallium nitride photonic crystal nanobeam laser

scholarly article by Nan Niu et al published 8 June 2015 in Applied Physics Letters

Ultra-low-threshold InGaN/GaN quantum dot micro-ring lasers

scientific article published in February 2018

Ultrafast, Polarized, Single-Photon Emission from m-Plane InGaN Quantum Dots on GaN Nanowires

scientific article published on 5 December 2016

Unintentional doping in GaN ⬇️

scientific article published on June 8, 2012

Unintentional doping in GaN assessed by scanning capacitance microscopy

Validity of Vegard’s rule for Al1−xInxN (0.08  <  x  <  0.28) thin films grown on GaN templates

Vertical leakage mechanism in GaN on Si high electron mobility transistor buffer layers

article

Wafer-scale Fabrication of Non-Polar Mesoporous GaN Distributed Bragg Reflectors via Electrochemical Porosification.

scientific article published on 27 March 2017

What is red? On the chromaticity of orange-red InGaN/GaN based LEDs

article by Y. Robin et al published 14 November 2018 in Journal of Applied Physics

X-ray reflectivity method for the characterization of InGaN/GaN quantum well interface

α-Ga 2 O 3 grown by low temperature atomic layer deposition on sapphire