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List of works by Ravi Droopad

Atomic imaging of atomic layer deposition oxide nucleation with trimethylaluminum on As-rich InGaAs(001) 2 × 4 vs Ga/In-rich InGaAs(001) 4 × 2 ⬇️

scientific article published on April 21, 2012

Atomic imaging of the monolayer nucleation and unpinning of a compound semiconductor surface during atomic layer deposition

scientific article published in October 2010

Direct and indirect causes of Fermi level pinning at the SiO/GaAs interface

scientific article

Dual passivation of GaAs (110) surfaces using O2/H2O and trimethylaluminum

scientific article

Dual passivation of intrinsic defects at the compound semiconductor/oxide interface using an oxidant and a reductant

scientific article published on 21 April 2015

Electronic properties of adsorbates on GaAs(001)-c(2x8)/(2x4).

scientific article published in October 2007

Initiation of a passivated interface between hafnium oxide and In(Ga)As(0 0 1)-(4x2).

scientific article published in June 2010

Interface Defect Hydrogen Depassivation and Capacitance-Voltage Hysteresis of Al2O3/InGaAs Gate Stacks

scientific article published on 2 February 2017

Magnetic Field Sensor Based on Varistor Response

scholarly article

Passivation of InGaAs(001)-(2 × 4) by Self-Limiting Chemical Vapor Deposition of a Silicon Hydride Control Layer

scientific article published on 23 June 2015

Scanning tunneling microscopy/spectroscopy study of atomic and electronic structures of In2O on InAs and In0.53Ga0.47As(001)-(4×2) surfaces ⬇️

scientific article published on October 28, 2010

Single-crystal-like germanium thin films on large-area, compliant, light-weight, flexible, single-crystal-like substrates

Structural, Optical, and Electrical Characterization of β-Ga2O3 Thin Films Grown by Plasma-Assisted Molecular Beam Epitaxy Suitable for UV Sensing

Temperature Dependent Border Trap Response Produced by a Defective Interfacial Oxide Layer in Al2O3/InGaAs Gate Stacks

scientific article

The influence of surface preparation on low temperature HfO2 ALD on InGaAs (001) and (110) surfaces

scientific article published in October 2015

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