A study of impurities in some CdS/CdTe photovoltaic cells prepared by wetchemical methods using secondary ion mass spectrometry and X‐ray photoelectron spectroscopy

Charge trap levels in sulfur-doped chemical-vapor-deposited diamond with applications to ultraviolet dosimetry

Combined nuclear microprobe and TEM study of corrosion pit nucleation by intermetallics in aerospace aluminium alloys

Controlled shallow single-ion implantation in silicon using an active substrate for sub-20‐keV ions

article by D. N. Jamieson et al published 16 May 2005 in Applied Physics Letters

Electrical characteristics of proton irradiated AlGaN devices

Fabrication of single atom nanoscale devices by ion implantation

IBIC characterisation of novel detectors for single atom doping of quantum computer devices

Integration of Single Ion Implantation Method in Focused Ion Beam System for Nanofabrication

Ion beam induced charge and numerical modeling study of novel detector devices for single ion implantation

Ion beam lithography with single ions

Ion-beam-induced-charge characterisation of particle detectors

Low-Noise Detection System for the Counted Implantation of Single Ions in Silicon

Optimization of single keV ion implantation for the construction of single P-donor devices

Quantum effects in ion implanted devices

Radiation damage on 6H-SiC Schottky diodes

Single atom Si nanoelectronics using controlled single-ion implantation

Spatial extent of band bending in diamond due to ion impact as measured by secondary electron emission: Experiment and theory

scholarly article in Physical Review B, vol. 73 no. 15, April 2006

TCAD modeling of ion beam induced charge collection in silicon Schottky barrier devices

Temperature-dependent emptying of grain-boundary charge traps in chemical vapor deposited diamond

The role of charge trapping at grain boundaries on charge transport in polycrystalline chemical vapor deposited diamond based detectors

Work function of hydrogen-terminated diamond surfaces under ion impact