(Invited) Spin-Based Silicon and CMOS-Compatible Devices

A CMOS IC for portable EEG acquisition systems

A Comprehensive Study of Carbon Nanotube Based Transistors: The Effects of Geometrical, Interface Barrier, and Scattering Parameters

article

A Comprehensive TCAD Approach for Assessing Electromigration Reliability of Modern Interconnects

A Global Self-Heating Model for Device Simulation

A Level Set simulator for nanooxidation using non-contact atomic force microscopy

A Study on Global and Local Optimization Techniques for TCAD Analysis Tasks

article published in 2004

A Universal Nonvolatile Processing Environment

A Wigner equation for the nanometer and femtosecond transport regime

A Wigner equation with quantum electron–phonon interaction

A calibrated model for silicon self-interstitial cluster formation and dissolution

A compact model for early electromigration failures of copper dual-damascene interconnects.

scientific article published on September 2011

A compact model for early electromigration lifetime estimation

A comparative study of single-electron memories

article published in 1998

A comparison of approaches for the solution of the Wigner equation

A comparison of quantum correction models for the three-dimensional simulation of FinFET structures

A finite element simulator for three-dimensional analysis of interconnect structures

A hybrid device simulator that combines Monte Carlo and drift-diffusion analysis

A method for generating structurally aligned grids for semiconductor device simulation

A method for generating structurally aligned high quality grids and its application to the simulation of a trench gate MOSFET

scientific article

A methodology for deep sub-0.25 μm CMOS technology prediction

A multistage smoothing algorithm for coupling cellular and polygonal datastructures

A new gate current model accounting for a non-Maxwellian electron energy distribution function

A new open technology CAD system

A novel finite-element approach to device modeling

A numerical analysis of bulk-barrier diodes

A numerical study of partial-SOI LDMOSFETs

A quasi-particle model of the electron–Wigner potential interaction

A review of hydrodynamic and energy-transport models for semiconductor device simulation

article

A singular perturbation approach for the analysis of the fundamental semiconductor equations

A strategy to enforce the discrete minimax principle on finite element meshes

A study of ion implantation into crystalline germanium

scholarly article by René Wittmann & S. Selberherr published June 2007 in Solid-State Electronics

Ab initio method for electromigration analysis

Accelerating Flux Calculations Using Sparse Sampling

scientific article published on 26 October 2018

Accurate Simulation of Substrate Currents by Accounting for the Hot Electron Tail Population

Accurate impact ionization model which accounts for hot and cold carrier populations

Algorithms and models for cellular based topography simulation

scholarly article by E. Strasser & S. Selberherr published 1995 in IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems

An adaptive grid approach for the simulation of electromigration induced void migration

An advanced model for dopant diffusion in polysilicon

An energy relaxation time model for device simulation

An event bias technique for Monte Carlo device simulation

article

Analysis of Breakdown Phenomena in MOSFET's

Analysis of Resistance Change Development Due to Voiding in Copper Interconnects Ended by A Through Silicon Via

article

Analysis of Split-Drain MAGFETs

Analysis of solder bump electromigration reliability

Analytical Modeling of Electron Mobility in Strained Germanium

article

Anisotropic Mesh Refinement for the Simulation of Three-Dimensional Semiconductor Manufacturing Processes

Atlas, matrices et similarités: Petit aperçu dialectométrique

Atomistic method for analysis of electromigration

BAMBI — A transient 2D-MESFET model with general boundary conditions including Schottky and current controlled contacts

Calculation of contact currents in device simulation

Carbon Nanotube Based Transistors: A Computational Study

article

Characterization of the hot electron distribution function using six moments

Classical Approximation of the Scattering Induced Wigner Correction Equation

Compact model for solder bump electromigration failure

Compact modeling of interconnect reliability

Comparison of numerical quantum device models

Complex Systems in Phase Space

scientific article published on 29 September 2020

Comprehensive modeling of electromigration induced interconnect degradation mechanisms

Computer simulations of Schottky contacts with a non-constant recombination velocity

Coupled simulation to determine the impact of across wafer variations in oxide PECVD on electrical and reliability parameters of through-silicon vias

Coupling of non-equilibrium Green’s function and Wigner function approaches

Current Transport in Nanoelectronic Semiconductor Devices

Current transport models for nanoscale semiconductor devices

Decoherence and time reversibility: The role of randomness at interfaces

Dependence of Injection Velocity and Capacitance of Si Nanowires on Diameter, Orientation, and Gate Bias: An Atomistic Tight-Binding Study

article

Dependence of spin lifetime on spin injection orientation in strained silicon films

Design optimization of multi-barrier tunneling devices using the transfer-matrix method

Design optimization of multi-barrier tunneling devices using the transfer-matrix method

Development of global calibration for accurate GaAs-PHEMT simulation

article

Device modelling for the 1990s

Direct extraction feature for scattering parameters of SiGe-HBTs

Effectiveness of silicon nitride passivation in III-V based heterojunction bipolar transistors

scientific article published in 2001

Effects of Stress-Induced Bandgap Narrowing on Reverse-Bias Junction Behavior

article

Effects of sidewall scallops on open tungsten TSVs

scholarly article published June 2014

Efficient Simulations of the Transport Properties of Spin Field-Effect Transistors Built on Silicon Fins

article

Efficient calculation of the two-dimensional Wigner potential

Electric Field Based Simulations of Local Oxidation Nanolithography Using Atomic Force Microscopy in a Level Set Environment

Electromigration Modeling for Interconnect Structures in Microelectronics

Electromigration analyses of open TSVs

Electromigration anisotropy and mechanical stress in modern copper interconnect

Electromigration enhanced growth of intermetallic compound in solder bumps

Electromigration failure in a copper dual-damascene structure with a through silicon via.

scientific article published on September 2012

Electromigration in solder bumps: A mean-time-to-failure TCAD study

Electromigration in submicron interconnect features of integrated circuits

Electromigration induced evolution of voids in current crowding areas of interconnects

Electromigration induced failure of solder bumps and the role of IMC

Electromigration induced resistance increase in open TSVs

Electromigration induced stress in open TSVs

Electromigration reliability of open TSV structures

Electron Inversion Layer Mobility Enhancement by Uniaxial Stress on (001) and (110) Oriented MOSFETs

article

Electron Mobility Model for Strained-Si Devices

article

Electron dynamics in nanoscale transistors by means of Wigner and Boltzmann approaches

article

Emerging memory technologies: Trends, challenges, and modeling methods

Energy transport gate current model accounting for non-Maxwellian energy distribution

Enhanced advancing front Delaunay meshing in TCAD

Error estimated driven anisotropic mesh refinement for three-dimensional diffusion simulation

article

Evaluation of ZrO/sub 2/ gate dielectrics for advanced CMOS devices

Feature-Scale Process Simulation and Accurate Capacitance Extraction for the Backend of a 100-nm Aluminum/TEOS Process

scholarly article by C. Heitzinger et al published July 2004 in IEEE Transactions on Electron Devices

Femtosecond relaxation of hot electrons by phonon emission in presence of electric field

Finite boxes—A generalization of the finite-difference method suitable for semiconductor device simulation

Frequency dependence study of a bias field-free nano-scale oscillator

article

From feature scale simulation to backend simulation for a 100 nm CMOS process

Fully coupled electrothermal mixed-mode device simulation of SiGe HBT circuits

Generation of Unstructured Meshes for Process and Device Simulation by Means of Partial Differential Equations

Geometry optimization for carbon nanotube transistors

article

Growth rates of dry thermal oxidation of 4H-silicon carbide

scholarly article by V. Šimonka et al published 7 October 2016 in Journal of Applied Physics

Hierarchical Simulation of Process Variations and Their Impact on Circuits and Systems: Methodology

High performance, uniaxially-strained, silicon and germanium, double-gate p-MOSFETs

scholarly article by T. Krishnamohan et al published September 2007 in Microelectronic Engineering

High-precision interconnect analysis

High-voltage lateral trench gate SOI-LDMOSFETs

Impact of NBTI-Driven Parameter Degradation on Lifetime of a 90nm p-MOSFET

Impact of Random Bit Values on NBTI Lifetime of an SRAM Cell

Impact of across-wafer variation on the electrical performance of TSVs

Impact of intermetallic compound on solder bump electromigration reliability

Impact of parameter variability on electromigration lifetime distribution

Implications of Analytical Investigations About the Semiconductor Equations on Device Modeling Programs

Implications of the coherence length on the discrete Wigner potential

Improved Sensing Capability of Integrated Semiconducting Metal Oxide Gas Sensor Devices

scientific article published on 17 January 2019

Improved drive-current into nanoscaled channels using electrostatic lenses

Improving DC and AC characteristics of ohmic contact carbon nanotube field effect transistors

article

Improving SiC lateral DMOSFET reliability under high field stress

Incorporation of Equipment Simulation into Integrated Feature Scale Profile Evolution

Industrial application of heterostructure device simulation

Influence of Geometry on the Memristive Behavior of the Domain Wall Spintronic Memristors and Its Applications for Measurement

Influence of generation/recombination effects in simulations of partially depleted SOI MOSFETs

Influence of temperature on the standard deviation of electromigration lifetimes

scholarly article published September 2013

Influence of the distribution function shape and the band structure on impact ionization modeling

Influence of the doping element on the electron mobility in n-silicon

article

Influence of the valley degeneracy on spin relaxation in thin silicon films

Integrated optimization capabilities in the VISTA technology CAD framework

Integration of atomistic and continuum-level electromigration models

Intersubband spin relaxation reduction and spin lifetime enhancement by strain in SOI structures

Inverse modeling of oxid deposition using measurements of a TEOS CVD process

Investigation of Intrinsic Stress Effects in Cantilever Structures

Investigation of Novel Silicon PV Cells of a Lateral Type

Investigation of parameter sensitivity of short channel mosfets

Investigation of spurious velocity overshoot using Monte Carlo data

Investigation of the electron mobility in strained Si/sub 1-x/Ge/sub x/ at high Ge composition

article

Lateral Trench Gate Super-Junction SOI-LDMOSFETs with Low On-Resistance

Low-Field Mobility in Strained Silicon Inversion Layers and UTB MOSFETs for Different Substrate Orientations

MINIMOS - A Two-Dimensional MOS Transistor Analyzer

article

MINIMOS—A two-dimensional MOS transistor analyzer

article

MOS device modeling at 77 K

Macro-modeling for MOS device simulation

Memory-efficient particle annihilation algorithm for Wigner Monte Carlo simulations

Micro materials modeling in MINIMOS-NT

Mixed-element decomposition method for three-dimensional grid adaptation

Mixed-mode device simulation

Mixed-mode device simulation

Mobility modeling in presence of quantum effects

article

Modeling current transport in ultra-scaled field-effect transistors

article

Modeling demands for nanoscale devices

Modeling electromigration in nanoscaled copper interconnects

Modeling of Gate Stack Patterning for Advanced Technology Nodes: A Review

article

Modeling of Low Concentrated Buffer DNA Detection with Suspend Gate Field-Effect Transistors (SGFET)

article

Modeling of Tunneling Current and Gate Dielectric Reliability for Nonvolatile Memory Devices

Modeling of advanced memories

Modeling of microstructural effects on electromigration failure

Modeling of modern MOSFETs with strain

Modeling spin-based electronic devices

Monte Carlo Simulation of Boron Implantation into (100) Germanium

Monte Carlo algorithms for stationary device simulations

article by M. Nedjalkov et al published March 2003 in Mathematics and Computers in Simulation

Monte Carlo method for modeling of small signal response including the Pauli exclusion principle

Monte Carlo simulation of ion implantation into two- and three-dimensional structures

Monte Carlo simulation of silicon amorphization during ion implantation

Monte-Carlo — Poisson coupling using transport coefficients

Multilevel simulation for the investigation of fast diffusivity paths

New SOI lateral power devices with trench oxide

New trends in microelectronics: Towards an ultimate memory concept

New trends in microelectronics: Towards an ultimate memory concept

Non-volatility by spin in modern nanoelectronics

Nonlinear electronic transport and device performance of HEMTs

Nonparabolic macroscopic transport models for device simulation based on bulk Monte Carlo data

Novel Buffered Magnetic Logic Gate Grid

Numerical simulation of selected semiconductor devices

Numerical study of partial-SOI LDMOSFET power devices

scholarly article

Numerical study of quantum transport in carbon nanotube transistors

article

Numerical treatment of nonrectangular field-oxide for 3-D MOSFET simulation

On Increasing the Accuracy of Simulations of Deposition and Etching Processes Using Radiosity and the Level Set Method

On smoothing three-dimensional monte carlo ion implantation simulation results

On the interplay between meshing and discretization in three-dimensional diffusion simulation

On the material depletion rate due to electromigration in a copper TSV structure

On the numerical solution of the three-dimensional semiconductor device equations on vector-concurrent computers

Optimization Issue in Interconnect Analysis

Optimization of Industrial High Voltage Structures by Three-Dimensional Diffusion Simulation

Optimization of Schottky barrier carbon nanotube field effect transistors

article

Optimization of Single-Gate Carbon-Nanotube Field-Effect Transistors

article

Optimization of electrothermal material parameters using inverse modeling [polysilicon fuse interconnects]

Optimization of pseudomorphic HEMT's supported by numerical simulations

Particle Model of the Scattering-Induced Wigner Function Correction

Particle-grid techniques for semiclassical and quantum transport simulations

Performance and stress analysis of metal oxide films for CMOS-integrated gas sensors.

scientific article

Physical models for strained and relaxed GaInAs alloys: Band structure and low-field transport

Physical scales in the Wigner-Boltzmann equation

scientific article

Physically based models of electromigration

Physically based models of electromigration: From Black’s equation to modern TCAD models

Predictive Simulation of AlGaN/GaN HEMTs

Process and device modeling for VISI

Process simulation for the 1990s

Quantum Correction to the Semiclassical Electron-Phonon Scattering Operator

Quantum insights in gate oxide charge-trapping dynamics in nanoscale MOSFETs

Quantum transport in ultra-scaled double-gate MOSFETs: A Wigner function-based Monte Carlo approach

ReaxFF Reactive Molecular Dynamics Study of Orientation Dependence of Initial Silicon Carbide Oxidation

scientific article published on 31 October 2017

Recent advances in transport modeling for miniaturized CMOS devices

Recent developments in advanced memory modeling

Reduction of momentum and spin relaxation rate in strained thin silicon films

Reduction of surface roughness induced spin relaxation in SOI MOSFETs

Reduction of the dark-current in carbon nanotube photo-detectors

Reformulation of macroscopic transport models based on the moments of the scattering integral [semiconductor device modeling applications]

Reliability Analysis and Comparison of Implication and Reprogrammable Logic Gates in Magnetic Tunnel Junction Logic Circuits

Reliability-Based Optimization of Spin-Transfer Torque Magnetic Tunnel Junction Implication Logic Gates

Reliable prediction of deep sub-quarter micron CMOS technology performance

Revision of the standard hydrodynamic transport model for SOI simulation

article by M. Gritsch et al published October 2002 in IEEE Transactions on Electron Devices

Rigorous integration of semiconductor process and device simulators

Rigorous modeling approach to numerical simulation of SiGe HBTs

Rigorous modeling of high-speed semiconductor devices

Rigorous three-dimensional photoresist exposure and development simulation over nonplanar topography

article

Role of the physical scales on the transport regime

SIMON-A simulator for single-electron tunnel devices and circuits

Self-adaptive space and time grids in device simulation

Semiclassical Approximation of Electron-Phonon Scattering Beyond Fermi's Golden Rule

Separated carrier injection control in carbon nanotube field-effect transistors

article

Silicon carbide accumulation-mode laterally diffused MOSFET

scholarly article

Silicon for Spintronic Applications: Strain-Enhanced Valley Splitting

Simple and accurate representation of implantation parameters by low order polynomals

Simulation and inverse modeling of TEOS deposition processes using a fast level set method

Simulation of Critical IC Fabrication Processes Using Advanced Physical and Numerical Methods

Simulation of Critical IC-Fabrication Steps

Simulation of InAlAs/InGaAs high electron mobility transistors with a single set of physical parameters

article

Simulation of Polysilicon Emitter Bipolar Transistors

article

Simulation of Texture Development Caused Stress Build-Up in Electroplated Copper Lines

article

Simulation of a "Well Tempered" SOI MOSFET using an enhanced hydrodynamic transport model

Simulation of arsenic in situ doping with polysilicon cvd and its application to high aspect ratio trenches

Simulation of carrier transport in carbon nanotube field effect transistors

article

Simulation of complete VLSI fabrication processes with heterogeneous simulation tools

Simulation of critical IC fabrication processes using advanced physical and numerical methods

Simulation of critical IC-fabrication steps

Simulation of hot-electron oxide tunneling current based on a non-Maxwellian electron energy distribution function

Simulation of power heterojunction bipolar transistors on gallium arsenide

article

Simulation of submicron double-heterojunction high electron mobility transistors with MINIMOS-NT

article

Simulation of the Impact of Ionized Impurity Scattering on the Total Mobility in Si Nanowire Transistors

article

Simulation of thermal oxidation: a three-dimensional finite element approach

Small-signal analysis and direct S-parameter extraction

Spin Lifetime Enhancement by Shear Strain in Thin Silicon-On-Insulator Films

Spin diffusion and the role of screening effects in semiconductors

Stochastic Algorithm for Solving the Wigner-Boltzmann Correction Equation

Stochastic Formulation of Newton’s Acceleration

Stochastic interpretation of the Wigner transport in nanostructures

Stochastic model of the resistive switching mechanism in bipolar resistive random access memory: Monte Carlo simulations

Stochastic modeling of the resistive switching mechanism in oxide-based memory

Strain Effects on Quasi-Bound State Tunneling in Advanced SOI CMOS Technologies

Strain engineering for CMOS devices

Strained MOSFETs on ordered SiGe dots.

scientific article published on November 2011

Stress Considerations in Thin Films for CMOS-Integrated Gas Sensors

Stress estimation in open tungsten TSV

scholarly article published September 2013

Stress evolution in the metal layers of TSVs with Bosch scallops

Stress-Induced Anisotropy of Electromigration in Copper Interconnects

Study of dopant-dependent band gap narrowing in compound semiconductor devices

Subband parameters in strained (110) silicon films from the Hensel-Hasegawa-Nakayama model of the conduction band

Substrate orientation-dependence of electron mobility in strained SiGe layers

article

Surface Morphology of 4H-SiC after Thermal Oxidation

scholarly article

TCAD solutions for submicron copper interconnect

Technology CAD: Device simulation and characterization

Temperature dependence of the transport properties of spin field-effect transistors built with InAs and Si channels

article

Temperature distribution and power dissipation in MOSFETs

The Economic Limit to Moore's Law [Point of View

The Effect of Electron-Phonon Interaction on the Static and Dynamic Response of CNTFETs

The Effect of General Strain on the Band Structure and Electron Mobility of Silicon

article

The Viennese integrated system for technology CAD applications

The Wigner Monte Carlo method for accurate semiconductor device simulation

The effect of device geometry on the static and dynamic response of carbon nanotube field effect transistors

article

The effect of inelastic phonon scattering on carbon nanotube-based transistor performance

article

The effect of microstructure on electromigration induced voids

The effect of microstructure on the electromigration lifetime distribution

The effect of uniaxial stress on band structure and electron mobility of silicon

article

The extraction of two-dimensional MOS transistor doping via inverse modeling

article

The role of inelastic electron-phonon interaction on the on-current and gate delay time of CNT FETs

The state-of-the-art in simulation for optimization of SiGe-HBTs

The stationary Monte Carlo method for device simulation. I. Theory

article by H. Kosina et al published 15 March 2003 in Journal of Applied Physics

The stationary Monte Carlo method for device simulation. II. Event biasing and variance estimation

article

Theory of the Monte Carlo method for semiconductor device simulation

Thermal models for semiconductor device simulation

Thermo-Electro-Mechanical Simulation of Semiconductor Metal Oxide Gas Sensors

scientific article published on 28 July 2019

Thermo-mechanical simulations of an open tungsten TSV

scholarly article published December 2012

Three-Dimensional Analysis of a MAGFET at 300 K and 77 K

Three-Dimensional Simulation of Intrinsic Stress Build-Up in Thin Films

Three-Dimensional Transient Interconnect Analysis With Regard to Mechanical Stress

Three-dimensional device optimization by Green's functions

Three-dimensional effects due to the field oxide in MOS devices analyzed with MINIMOS 5

Three-dimensional process and device modeling

Three-dimensional resist development simulation — Benchmarks and integration with lithography

article

Three-dimensional simulation for the reliability and electrical performance of through-silicon vias

Three-dimensional topography simulation based on a level set method [deposition and etching processes]

Towards a free open source process and device simulation framework

Trajectory split method for Monte Carlo simulation of ion implantation

Transient model for terminal current noise

Transport in Nanostructures: A Comparative Analysis Using Monte Carlo Simulation, the Spherical Harmonic Method, and Higher Moments Models

Transport modeling for nanoscale semiconductor devices

Transport properties of spin field-effect transistors built on Si and InAs

article

Tunneling and intersubband coupling in ultra-thin body double-gate mosfets

Two-Dimensional Green's Function of a Semi-Infinite Anisotropic Dielectric in the Wavenumber Domain

scientific article published on 01 January 1986

Two-band k·p model for the conduction band in silicon: Impact of strain and confinement on band structure and mobility

article

Two-dimensional coupled diffusion modeling

Two-dimensional modeling of ion implantation induced point defects

Two-dimensional modeling of ion implantation with spatial moments

Two-dimensional simulation of ferroelectric memory cells

Two-dimensional simulation of thermal runaway in a nonplanar GTO-thyristor

Two-dimensional transient simulation of the turn-off behavior of a planar MOS-transistor

article

Two-dimensional transient wigner particle model

Ultra-scaled Z-RAM cell

Unified particle approach to Wigner-Boltzmann transport in small semiconductor devices

scholarly article in Physical Review B, vol. 70 no. 11, September 2004

Using strain to increase the reliability of scaled spin MOSFETs

VISTA-the data level

VISTA-user interface, task level, and tool integration

VSP – A gate stack analyzer

Valley splitting and spin lifetime enhancement in strained thin silicon films

Valley splitting in thin silicon films from a two-band k·p model

Variation of Spin Lifetime with Spin Injection Orientation in Strained Thin Silicon Films

Volume inversion mobility in SOI MOSFETs for different thin body orientations

article

Wigner quasi-particle attributes—An asymptotic perspective

Wigner transport through tunneling structures scattering interpretation of the potential operator