Anisotropic optical properties of semipolar AlGaN layers grown on m-plane sapphire

Crystal orientation of GaN layers on (1010) m-plane sapphire

Defect structures in (001) zincblende GaN/3C-SiC nucleation layers

Determination of lattice parameters, strain state and composition in semipolar III-nitrides using high resolution X-ray diffraction

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Effect of electron blocking layers on the conduction and valence band profiles of InGaN/GaN LEDs

Effect of growth temperature and V/III-ratio on the surface morphology of MOVPE-grown cubic zincblende GaN

Excitonic recombination in epitaxial lateral overgrown AlN on sapphire

Facet analysis of truncated pyramid semi-polar GaN grown on Si(100) with rare-earth oxide interlayer

Growth and characterization of stacking fault reduced GaN $(1\,0\,\bar{1}\,3)$ on sapphire

Indium incorporation efficiency and critical layer thickness of (202¯1) InGaN layers on GaN

Investigation of stacking faults in MOVPE-grown zincblende GaN by XRD and TEM

Low defect large area semi-polar (11[Formula: see text]2) GaN grown on patterned (113) silicon

scientific article published on 9 December 2014

MOVPE growth of semipolar (112¯2)Al1−xInxNacross the alloy composition range (0≤x≤0.55)

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Multimicroscopy of cross-section zincblende GaN LED heterostructure

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Nanoscale structural and chemical analysis of F-implanted enhancement-mode InAlN/GaN heterostructure field effect transistors

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Optical properties of c-Plane InGaN/GaN single quantum wells as a function of total electric field strength

Optimizing GaN (112‾2) hetero-epitaxial templates grown on (101‾0) sapphire

Orientation control of GaN and grown on sapphire by metal-organic vapor phase epitaxy

Polarization of photoluminescence emission from semi-polar (11–22) AlGaN layers

Preparation and structure of ultra-thin GaN (0001) layers on In0.11Ga0.89N-single quantum wells

Single phase GaN on sapphire grown by metal-organic vapor phase epitaxy

Ti Alloyed <i>α</i>-Ga₂O₃: Route towards Wide Band Gap Engineering

scientific article published on 20 December 2020

Waveguide Optimization for Semipolar (In,Al,Ga)N Lasers

X-ray reflectivity method for the characterization of InGaN/GaN quantum well interface