List of works - Sunhee Lee

A single-atom transistor

scientific article

Atomistic Simulation of Realistically Sized Nanodevices Using NEMO 3-D—Part I: Models and Benchmarks

article

Electronic structure of realistically extended atomistically resolved disordered Si:Pδ-doped layers

scholarly article in Physical Review B, vol. 84 no. 20, November 2011

Atomistic modeling of metallic nanowires in silicon

scientific article

Interface Trap Density Metrology of State-of-the-Art Undoped Si n-FinFETs

scholarly article by Giuseppe C. Tettamanzi et al published April 2011 in IEEE Electron Device Letters

Thermionic Emission as a Tool to Study Transport in Undoped nFinFETs

scholarly article

Computational Study on the Performance of Si Nanowire pMOSFETs Based on the $k \cdot p$ Method

A Study of Temperature-dependent Properties of N-type d-doped Si Band-structures in Equilibrium

article published in 2009

Million Atom Electronic Structure and Device Calculations on Peta-Scale Computers

Advancing nanoelectronic device modeling through peta-scale computing and deployment on nanoHUB

Optical TCAD on the Net: A tight-binding study of inter-band light transitions in self-assembled InAs/GaAs quantum dot photodetectors

Multimillion Atom Simulations with Nemo3D

Numerical guidelines for setting up a k.p simulator with applications to quantum dot heterostructures and topological insulators

Silicon at the fundamental scaling limit-atomic-scale donor-based quantum electronics

A tight-binding study of channel modulation in atomic-scale Si:P nanowires

Full-band study of ultra-thin Si:P nanowires

A tight-binding study of single-atom transistors

scientific article published on 8 October 2014

Interface trap density metrology from sub-threshold transport in highly scaled undoped Si n-FinFETs

scholarly article by Abhijeet Paul et al published 15 December 2011 in Journal of Applied Physics

Quantum Confined Stark Shift and Ground State Optical Transition Rate in [100] Laterally Biased InAs/GaAs Quantum Dots