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Reduction of Threshold Voltage Hysteresis of MoS2 Transistors with 3-Aminopropyltriethoxysilane Passivation and Its Application for Improved Synaptic Behavior

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Description scientific article published on 30 May 2019
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author: Gwang-Sik Kim  Jin-Hong Park  Hyun-Yong Yu 

Publication date May 30, 2019
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