All-Inorganic Bismuth Halide Perovskite-Like Materials A3Bi2I9 and A3Bi1.8Na0.2I8.6 (A = Rb and Cs) for Low-Voltage Switching Resistive Memory
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| Description | scientific article published on 22 August 2018 |
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author: Donghwa Lee Nam-Gyu Park |
| Publication date | August 22, 2018 |
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