Schottky Barrier Height Engineering for Electrical Contacts of Multilayered MoS2 Transistors with Reduction of Metal-Induced Gap States
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| Description | scientific article published on 06 June 2018 |
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author: Jiyoung Kim Gwang-Sik Kim Hyun-Yong Yu Seung-Hwan Kim |
| Publication date | June 6, 2018 |
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