Donor levels and the microscopic structure of the DX center in n-type Si-doped AlxGa0.51-xIn0.49P grown by molecular-beam epitaxy
| Image |  |
|---|---|
| Description | scientific article published on 01 March 1996 |
| Author/s |
author: Kirsi Tappura |
| Publication date | March 1, 1996 |
| Language | English |
| Country of origin | |
| Wikipedia link | |
| Copyright status | |
| Missing/wrong data? | Edit Wikidata item |