Phosphorous-Doped Silicon Carbide as Front-Side Full-Area Passivating Contact for Double-Side Contacted c-Si Solar Cells
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| Description | scholarly article by Andrea Ingenito et al published March 2019 in IEEE Journal of Photovoltaics |
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author: Josua Stuckelberger Christophe Ballif |
| Publication date | March 2019 |
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